TSHG6410 www.vishay.com Vishay Semiconductors High Speed Infrared Emitting Diode, 850 nm, GaAlAs Double Hetero FEATURES • Package type: leaded • Package form: T-1¾ • Dimensions (in mm): Ø 5 • Peak wavelength: p = 850 nm • • • • High reliability High radiant power High radiant intensity Angle of half intensity: = ± 18° • Low forward voltage • Suitable for high pulse current operation • High modulation bandwidth: fc = 18 MHz 94 8389 • Good spectral matching with CMOS cameras • Compliant to RoHS Directive 2002/95/EC and in accordance to WEEE 2002/96/EC DESCRIPTION TSHG6410 is an infrared, 850 nm emitting diode in GaAlAs double hetero (DH) technology with high radiant power and high speed, molded in a clear, untinted plastic package. Note ** Please see document “Vishay Material Category Policy”: www.vishay.com/doc?99902 APPLICATIONS • Infrared radiation source for operation with CMOS cameras • High speed IR data transmission PRODUCT SUMMARY COMPONENT Ie (mW/sr) (deg) p (nm) tr (ns) 90 ± 18 850 20 TSHG6410 Note • Test conditions see table “Basic Characteristics” ORDERING INFORMATION ORDERING CODE TSHG6410 PACKAGING REMARKS PACKAGE FORM Bulk MOQ: 4000 pcs, 4000 pcs/bulk T-1¾ Note • MOQ: minimum order quantity ABSOLUTE MAXIMUM RATINGS (Tamb = 25 °C, unless otherwise specified) SYMBOL VALUE Reverse voltage VR 5 V Forward current IF 100 mA mA PARAMETER TEST CONDITION UNIT Peak forward current tp/T = 0.5, tp = 100 μs IFM 200 Surge forward current tp = 100 μs IFSM 1 A PV 180 mW Power dissipation Junction temperature Operating temperature range Tj 100 °C Tamb - 40 to + 85 °C Tstg - 40 to + 100 °C Soldering temperature t 5 s, 2 mm from case Tsd 260 °C Thermal resistance junction/ambient J-STD-051, leads 7 mm, soldered on PCB RthJA 230 K/W Storage temperature range Rev. 1.3, 23-Aug-11 Document Number: 81870 1 For technical questions, contact: [email protected] THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000 TSHG6410 www.vishay.com Vishay Semiconductors 200 120 160 IF - Forward Current (mA) PV - Power Dissipation (mW) 180 140 120 RthJA = 230 K/W 100 80 60 40 100 80 RthJA = 230 K/W 60 40 20 20 0 0 10 21142 20 30 40 50 60 70 80 0 90 100 0 Tamb - Ambient Temperature (°C) 21143 Fig. 1 - Power Dissipation Limit vs. Ambient Temperature 10 20 30 40 50 60 70 80 90 100 Tamb - Ambient Temperature (°C) Fig. 1 - Forward Current Limit vs. Ambient Temperature BASIC CHARACTERISTICS (Tamb = 25 °C, unless otherwise specified) TEST CONDITION SYMBOL TYP. MAX. IF = 100 mA, tp = 20 ms VF 1.5 1.8 IF = 1 A, tp = 100 μs VF 2.3 Temperature coefficient of VF IF = 1 mA TKVF - 1.8 Reverse current VR = 5 V IR VR = 0 V, f = 1 MHz, E = 0 Cj IF = 100 mA, tp = 20 ms Ie PARAMETER Forward voltage Junction capacitance Radiant intensity MIN. 90 V V mV/K 10 μA 135 mW/sr 125 45 UNIT pF IF = 1 A, tp = 100 μs Ie 900 IF = 100 mA, tp = 20 ms e 55 mW IF = 100 mA TKe - 0.35 %/K Peak wavelength IF = 100 mA p Spectral bandwidth IF = 100 mA 40 nm Temperature coefficient of p IF = 100 mA TKp 0.25 nm/K Rise time IF = 100 mA tr 20 ns Fall time IF = 100 mA tf 13 ns IDC = 70 mA, IAC = 30 mA pp fc 18 MHz d 2.1 mm Radiant power Temperature coefficient of e Angle of half intensity Cut-off frequency Virtual source diameter Rev. 1.3, 23-Aug-11 mW/sr ± 18 820 850 deg 880 nm Document Number: 81870 2 For technical questions, contact: [email protected] THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000 TSHG6410 www.vishay.com Vishay Semiconductors BASIC CHARACTERISTICS (Tamb = 25 °C, unless otherwise specified) 1000 Tamb < 50 °C tp/T = 0.01 1000 Radiant Power (mW) IF - Forward Current (mA) 0.02 0.05 0.1 10 1 e- 0.2 100 0.5 100 0.01 0.1 0.1 1 10 100 tp - Pulse Duration (ms) 16031 1 1.25 Φe, rel - Relative Radiant Power 1000 100 tp = 100 µs tp/T = 0.001 10 1.0 0.75 0.5 0.25 0 1 18873 1 3 2 VF - Forward Voltage (V) 4 800 Fig. 3 - Forward Current vs. Forward Voltage 850 Fig. 6 - Relative Radiant Power vs. Wavelength 0° Ie rel - Relative Radiant Intensity 1000 100 10 tP = 0.1 ms 900 λ- Wavelength (nm) 16972 10° 20° 30° 40° 1.0 50° 0.9 60° 0.8 70° ϕ - Angular Displacement 0 Ie - Radiant Intensity (mW/sr) 1000 Fig. 5 - Radiant Power vs. Forward Current Fig. 2 - Pulse Forward Current vs. Pulse Duration IF - Forward Current (mA) 10 100 IF - Forward Current (mA) 16971 80° 0.7 1 1 21308 10 100 1000 Fig. 4 - Radiant Intensity vs. Forward Current Rev. 1.3, 23-Aug-11 21355 0.6 0.4 0.2 0 IF - Forward Current (mA) Fig. 7 - Relative Radiant Intensity vs. Angular Displacement Document Number: 81870 3 For technical questions, contact: [email protected] THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000 TSHG6410 www.vishay.com Vishay Semiconductors PACKAGE DIMENSIONS in millimeters C R 2.49 (sphere) 35.3 ± 0.55 < 0.7 8.7 ± 0.3 (4.5) 7.7 ± 0.15 Ø 5.8 ± 0.15 A Area not plane Ø 5 ± 0.15 + 0.2 - 0.1 1 min. 0.6 0.5 0.5 + 0.15 - 0.05 + 0.15 - 0.05 technical drawings according to DIN specifications 2.54 nom. Drawing-No.: 6.544-5259.11-4 Issue: 2; 19.05.09 21809 Rev. 1.3, 23-Aug-11 Document Number: 81870 4 For technical questions, contact: [email protected] THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000 Legal Disclaimer Notice www.vishay.com Vishay Disclaimer ALL PRODUCT, PRODUCT SPECIFICATIONS AND DATA ARE SUBJECT TO CHANGE WITHOUT NOTICE TO IMPROVE RELIABILITY, FUNCTION OR DESIGN OR OTHERWISE. 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We confirm that all the products identified as being compliant to IEC 61249-2-21 conform to JEDEC JS709A standards. Revision: 02-Oct-12 1 Document Number: 91000