TSPF6200 www.vishay.com Vishay Semiconductors High Power Infrared Emitting Diode, 890 nm, GaAlAs / Double Hetero FEATURES • Package type: leaded • Package form: T-1¾ • Dimensions (in mm): Ø 5 • Peak wavelength: λp = 890 nm • High reliability • High radiant power • High radiant intensity • Angle of half intensity: ϕ = ± 22° 94 8389 • Low forward voltage • Suitable for high pulse current operation • Good spectral matching with Si photodetectors • Material categorization: for definitions of compliance please see www.vishay.com/doc?99912 DESCRIPTION TSPF6200 is an infrared, 890 nm emitting diode in GaAlAs / double hetero (DH) technology with high radiant power, high speed, and with typical receiving characteristics, TSPF6200 is molded in a blue gray tinted plastic package. APPLICATIONS • Metering systems PRODUCT SUMMARY COMPONENT Ie (mW/sr) ϕ (deg) λp (nm) tr (ns) 55 ± 22 890 50 TSPF6200 Note • Test conditions see table “Basic Characteristics” ORDERING INFORMATION ORDERING CODE TSPF6200 PACKAGING REMARKS PACKAGE FORM Bulk MOQ: 3000 pcs, 3000 pcs/bulk T-1¾ Note • MOQ: minimum order quantity ABSOLUTE MAXIMUM RATINS (Tamb = 25 °C, unless otherwise specified) PARAMETER TEST CONDITION SYMBOL VALUE UNIT Reverse voltage VR 5 V Forward current IF 100 mA mA Peak forward current tp/T = 0.5, tp = 100 μs IFM 200 Surge forward current tp = 100 μs IFSM 1.5 A PV 170 mW °C Power dissipation Junction temperature Tj 100 Operating temperature range Tamb -40 to +85 °C Storage temperature range Tstg -40 to +100 °C t ≤ 5 s, 2 mm from case Tsd 260 °C J-STD-051, leads 7 mm soldered on PCB RthJA 230 K/W Soldering temperature Thermal resistance junction / ambient Rev. 1.2, 27-Oct-14 Document Number: 82425 1 For technical questions, contact: [email protected] THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000 TSPF6200 www.vishay.com Vishay Semiconductors 120 160 IF - Forward Current (mA) PV - Power Dissipation (mW) 180 RthJA = 230 K/W 140 120 100 80 60 40 20 0 100 80 RthJA = 230 K/W 60 40 20 0 0 10 20 30 40 50 60 70 80 90 100 0 10 20 30 40 50 60 70 80 90 100 Tamb - Ambient Temperature (°C) Tamb - Ambient Temperature (°C) Fig. 1 - Power Dissipation Limit vs. Ambient Temperature Fig. 2 - Forward Current Limit vs. Ambient Temperature BASIC CHARACTERISTICS (Tamb = 25 °C, unless otherwise specified) PARAMETER TEST CONDITION SYMBOL TYP. MAX. IF = 100 mA, tp = 20 ms VF 1.42 1.7 IF = 1 A, tp = 100 μs VF 3.0 IF = 100 mA TKVF -1.7 VR = 5 V IR VR = 0 V, f = 1 MHz, E = 0 Cj IF = 100 mA, tp = 20 ms Ie Forward voltage Temperature coefficient of VF Reverse current Junction capacitance Radiant intensity MIN. UNIT V V mV/K 100 nA 90 mW/sr 160 30 pF 55 IF = 1 A, tp = 100 μs Ie 520 Ee = 1 mW/cm2, λ = 870 nm, VR = 5 V Ira 10 μA IF = 100 mA, tp = 20 ms φe 40 mW IF = 100 mA TKφe -0.35 %/K Peak wavelength IF = 100 mA λp Spectral bandwidth IF = 100 mA Δλ 40 nm Temperature coefficient of λp IF = 100 mA TKλp 0.25 nm/K Rise time IF = 100 mA tr 50 ns Fall time IF = 100 mA tf 50 ns Reverse light current Radiant power Temperature coefficient of φe ϕ Angle of half intensity mW/sr ± 22 870 deg 890 910 nm BASIC CHARACTERISTICS (Tamb = 25 °C, unless otherwise specified) Tamb < 50 °C tp/T = 0.01 1000 IF - Forward Current (mA) IF - Forward Current (mA) 0.02 0.05 0.1 0.2 0.5 100 0.01 16031 0.1 1 10 100 tp - Pulse Duration (ms) Fig. 3 - Pulse Forward Current vs. Pulse Duration Rev. 1.2, 27-Oct-14 1000 100 10 1 0 0.5 1.0 1.5 2.0 2.5 3.0 3.5 VF - Forward Voltage (V) Fig. 4 - Forward Current vs. Forward Voltage Document Number: 82425 2 For technical questions, contact: [email protected] THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000 TSPF6200 www.vishay.com Vishay Semiconductors 1.25 S( λ ) rel - Relative Spectral Sensitivity 100 10 1 0.75 0.5 0.25 0 1 1 10 100 1000 IF - Forward Current (mA) 800 820 840 860 880 900 920 940 960 980 1000 λ - Wavelength (nm) 20420 Fig. 5 - Radiant Intensity vs. Forward Current Fig. 8 - Relative Spectral Sensitivity vs. Wavelength 0° 10° 20° 30° Ie rel - Relative Radiant Intensity Φe - Radiant Power (mW) 1000 100 10 40° 1.0 0.9 50° 0.8 60° 1 1 10 100 1000 70° 0.7 94 8883 ϕ - Angular Displacement Ie - Radiant Intensity (mW/sr) 1000 80° 0.6 0.4 0.2 0 IF - Forward Current (mA) Fig. 6 - Radiant Power vs. Forward Current Fig. 9 - Relative Radiant Intensity vs. Angular Displacement Φe rel - Relative Radiant Power 1.25 1.0 0.75 0.5 0.25 0 800 20082 900 1000 λ - Wavelength (nm) Fig. 7 - Relative Radiant Intensity/Power vs. Wavelength Rev. 1.2, 27-Oct-14 Document Number: 82425 3 For technical questions, contact: [email protected] THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000 TSPF6200 www.vishay.com Vishay Semiconductors PACKAGE DIMENSIONS in millimeters Ø 5.8 ± 0.15 C R 2.49 (sphere) (3.5) 34.3 ± 0.55 < 0.7 8.7 ± 0.3 7.7 ± 0.15 A Area not plane + 0.2 0.6 - 0.1 1 min. Ø 5 ± 0.15 0.15 0.5 +- 0.05 0.15 0.5 +- 0.05 technical drawings according to DIN specifications 2.54 nom. Drawing-No.: 6.544-5259.06-4 Issue: 6; 19.05.09 19257 Rev. 1.2, 27-Oct-14 Document Number: 82425 4 For technical questions, contact: [email protected] THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000 Legal Disclaimer Notice www.vishay.com Vishay Disclaimer ALL PRODUCT, PRODUCT SPECIFICATIONS AND DATA ARE SUBJECT TO CHANGE WITHOUT NOTICE TO IMPROVE RELIABILITY, FUNCTION OR DESIGN OR OTHERWISE. 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