TSUS5200, TSUS5201, TSUS5202 www.vishay.com Vishay Semiconductors Infrared Emitting Diode, 950 nm, GaAs FEATURES • • • • • • • • • • • 94 8390 Package type: leaded Package form: T-1¾ Dimensions (in mm): Ø 5 Leads with stand-off Peak wavelength: λp = 950 nm High reliability Angle of half intensity: ϕ = ± 15° Low forward voltage Suitable for high pulse current operation Good spectral matching with Si photodetectors Compliant to RoHS Directive 2002/95/EC and in accordance to WEEE 2002/96/EC Note ** Please see document “Vishay Material Category Policy”: www.vishay.com/doc?99902 DESCRIPTION TSUS5200 is an infrared, 950 nm emitting diode in GaAs technology molded in a blue-gray tinted plastic package. APPLICATIONS • Infrared remote control and free air transmission systems with low forward voltage and small package requirements • Emitter in transmissive sensors • Emitter in reflective sensors PRODUCT SUMMARY COMPONENT Ie (mW/sr) ϕ (deg) λP (nm) tr (ns) 20 25 30 ± 15 ± 15 ± 15 950 950 950 800 800 800 TSUS5200 TSUS5201 TSUS5202 Note • Test conditions see table “Basic Characteristics” ORDERING INFORMATION ORDERING CODE TSUS5200 TSUS5201 TSUS5202 PACKAGING REMARKS PACKAGE FORM Bulk Bulk Bulk MOQ: 4000 pcs, 4000 pcs/bulk MOQ: 4000 pcs, 4000 pcs/bulk MOQ: 4000 pcs, 4000 pcs/bulk T-1¾ T-1¾ T-1¾ Note • MOQ: minimum order quantity ABSOLUTE MAXIMUM RATINGS (Tamb = 25 °C, unless otherwise specified) PARAMETER Reverse voltage Forward current Peak forward current Surge forward current Power dissipation Junction temperature Operating temperature range Storage temperature range Soldering temperature Thermal resistance junction/ambient Rev. 2.3, 24-Aug-11 TEST CONDITION tp/T = 0.5, tp = 100 μs tp = 100 μs t ≤ 5 s, 2 mm from case J-STD-051, leads 7 mm, soldered on PCB SYMBOL VALUE UNIT VR IF IFM IFSM PV Tj Tamb Tstg Tsd RthJA 5 150 300 2.5 170 100 - 40 to + 85 - 40 to + 100 260 230 V mA mA A mW °C °C °C °C K/W Document Number: 81055 1 For technical questions, contact: [email protected] THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000 TSUS5200, TSUS5201, TSUS5202 www.vishay.com Vishay Semiconductors 120 160 IF - Forward Current (mA) PV - Power Dissipation (mW) 180 140 120 100 RthJA = 230 K/W 80 60 40 100 80 60 RthJA = 230 K/W 40 20 20 0 0 0 10 21313 20 30 40 50 60 70 80 90 100 0 Tamb - Ambient Temperature (°C) 21314 Fig. 1 - Power Dissipation Limit vs. Ambient Temperature 10 20 30 40 50 60 70 80 90 100 Tamb - Ambient Temperature (°C) Fig. 1 - Forward Current Limit vs. Ambient Temperature BASIC CHARACTERISTICS (Tamb = 25 °C, unless otherwise specified) PARAMETER Forward voltage Temperature coefficient of VF TEST CONDITION SYMBOL TYP. MAX. IF = 100 mA, tp = 20 ms VF MIN. 1.3 1.7 IF = 100 mA TKVF - 1.3 UNIT V mV/K VR = 5 V IR VR = 0 V, f = 1 MHz, E = 0 Cj 30 pF IF = 20 mA TKφe - 0.8 %/K ϕ ± 15 deg Peak wavelength IF = 100 mA λp 950 nm Spectral bandwidth IF = 100 mA Δλ 50 nm Temperature coefficient of λp IF = 100 mA TKλp 0.2 nm/K IF = 100 mA tr 800 ns Reverse current Junction capacitance Temperature coefficient of φe Angle of half intensity Rise time Fall time Virtual source diameter Rev. 2.3, 24-Aug-11 100 μA IF = 1.5 A tr 400 ns IF = 100 mA tf 800 ns IF = 1.5 A tf 400 ns d 3.8 mm Document Number: 81055 2 For technical questions, contact: [email protected] THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000 TSUS5200, TSUS5201, TSUS5202 www.vishay.com Vishay Semiconductors TYPE DEDICATED CHARACTERISTICS (Tamb = 25 °C, unless otherwise specified) TEST CONDITION PARAMETER IF = 1.5 A, tp = 100 μs Forward voltage IF = 100 mA, tp = 20 ms Radiant intensity IF = 1.5 A, tp = 100 μs IF = 100 mA, tp = 20 ms Radiant power PART SYMBOL TYP. MAX. UNIT TSUS5200 VF MIN. 2.2 3.4 V TSUS5201 VF 2.2 3.4 V TSUS5202 VF 2.2 2.7 V TSUS5200 Ie 10 20 50 mW/sr TSUS5201 Ie 15 25 50 mW/sr TSUS5202 Ie 20 30 50 TSUS5200 Ie 95 180 mW/sr mW/sr TSUS5201 Ie 120 230 mW/sr TSUS5202 Ie 170 280 mW/sr TSUS5200 φe 13 mW TSUS5201 φe 14 mW TSUS5202 φe 15 mW BASIC CHARACTERISTICS (Tamb = 25 °C, unless otherwise specified) 1.2 VF rel - Relative Forward Voltage (V) I F - Forward Current (A) 10 1 I FSM = 2.5 A ( Single Pulse ) tp/T = 0.01 10 0 0.05 0.1 0.5 1.0 10 -1 10 -2 94 7989 0.9 0.8 0 10 2 20 40 60 80 100 Tamb - Ambient Temperature (°C) 94 7990 Fig. 4 - Relative Forward Voltage vs. Ambient Temperature 10 4 1000 I e - Radiant Intensity (mW/sr) I F - Forward Current (mA) IF = 10 mA 1.0 0.7 10 -1 10 0 10 1 t p - Pulse Duration (ms) Fig. 2 - Pulse Forward Current vs. Pulse Duration 10 3 10 2 10 1 10 0 10 -1 1.1 TSUS 5202 100 TSUS5200 10 TSUS 5201 1 0 94 7996 1 2 3 4 V F - Forward Voltage (V) Fig. 3 - Forward Current vs. Forward Voltage Rev. 2.3, 24-Aug-11 10 0 94 7991 10 1 10 2 10 3 I F - Forward Current (mA) 10 4 Fig. 5 - Radiant Intensity vs. Forward Current Document Number: 81055 3 For technical questions, contact: [email protected] THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000 TSUS5200, TSUS5201, TSUS5202 www.vishay.com Vishay Semiconductors 1.25 TSUS 5202 Φe rel - Relative Radiant Power Φ - Radiant Power (mW) e 1000 100 TSUS5200 10 1 1.0 0.75 0.5 0.25 IF = 100 mA 0.1 10 0 10 1 10 2 10 3 I F - Forward Current (mA) 94 7992 0 900 10 4 Fig. 6 - Radiant Power vs. Forward Current Fig. 8 - Relative Radiant Power vs. Wavelength 1.6 I e rel - Relative Radiant Intensity 0° Ie rel; Φe rel 1.2 IF = 20 mA 0.8 0.4 10° 20° 30° 40° 1.0 0.9 50° 0.8 60° 70° 0.7 80° 0 - 10 0 10 50 140 100 0.6 T amb - Ambient Temperature (°C) 94 7993 1000 950 λ - Wavelength (nm) 94 7994 0.4 0.2 0 0.2 0.4 0.6 94 7995 Fig. 7 - Relative Radiant Intensity/Power vs. Ambient Temperature Fig. 9 - Relative Radiant Intensity vs. Angular Displacement PACKAGE DIMENSIONS in millimeters C R 2.49 (sphere) < 0.7 (4.7) 7.7 ± 0.15 8.7 ± 0.3 35.5 ± 0.55 12.5 ± 0.3 Ø 5.8 ± 0.15 A Area not plane 1.1 ± 0.25 1 min. Ø 5 ± 0.15 0.15 0.5 +- 0.05 + 0.15 0.5 - 0.05 technical drawings according to DIN specifications 2.54 nom. 6.544-5258.02-4 Issue: 7; 23.07.10 95 10916 Rev. 2.3, 24-Aug-11 Document Number: 81055 4 For technical questions, contact: [email protected] THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000 Legal Disclaimer Notice www.vishay.com Vishay Disclaimer ALL PRODUCT, PRODUCT SPECIFICATIONS AND DATA ARE SUBJECT TO CHANGE WITHOUT NOTICE TO IMPROVE RELIABILITY, FUNCTION OR DESIGN OR OTHERWISE. Vishay Intertechnology, Inc., its affiliates, agents, and employees, and all persons acting on its or their behalf (collectively, “Vishay”), disclaim any and all liability for any errors, inaccuracies or incompleteness contained in any datasheet or in any other disclosure relating to any product. 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