VSMB2943SLX01 Datasheet

VSMB2943SLX01
www.vishay.com
Vishay Semiconductors
High Speed Infrared Emitting Diodes, 940 nm, GaAlAs, MQW
FEATURES
• Package type: surface mount
• Package form: side view
• Dimensions (L x W x H in mm): 2.3 x 2.55 x 2.3
• AEC-Q101 qualified
• Peak wavelength: λp = 940 nm
• High reliability
DESCRIPTION
• High radiant power
VSMB2943SLX01 is an infrared, 940 nm, side looking
emitting diode in GaAlAs multi quantum well (MQW)
technology with high radiant power and high speed, molded
in clear, untinted plastic package (with lens) for surface
mounting (SMD).
• High radiant intensity
• Angle of half intensity: ϕ = ± 25°
• Low forward voltage
• Suitable for high pulse current operation
APPLICATIONS
• Package matches with detector VEMD2023SLX01 and
VEMT2023SLX01
• IrDA compatible data transmission
• Floor life: 4 weeks, MSL 2a, acc. J-STD-020
• Miniature light barrier
• Material categorization: For definitions of compliance
please see www.vishay.com/doc?99912
• Photointerrupters
• Optical switch
• Remote control
• IR touch panels
PRODUCT SUMMARY
COMPONENT
Ie (mW/sr)
ϕ (deg)
λp (nm)
tr (ns)
20
± 25
940
15
VSMB2943SLX01
Note
• Test conditions see table “Basic Characteristics“
ORDERING INFORMATION
ORDERING CODE
PACKAGING
REMARKS
PACKAGE FORM
VSMB2943SLX01
Tape and reel
MOQ: 3000 pcs, 3000 pcs/reel
Side view
Note
• MOQ: minimum order quantity
ABSOLUTE MAXIMUM RATINGS (Tamb = 25 °C, unless otherwise specified)
PARAMETER
TEST CONDITION
Reverse voltage
Forward current
SYMBOL
VALUE
UNIT
VR
5
V
IF
100
mA
Peak forward current
tp/T = 0.5, tp = 100 μs
IFM
200
mA
Surge forward current
tp = 100 μs
IFSM
1
A
PV
160
mW
°C
Power dissipation
Junction temperature
Tj
100
Operating temperature range
Tamb
-40 to +85
°C
Storage temperature range
Tstg
-40 to +100
°C
according figure 9, J-STD-020
Tsd
260
°C
J-STD-051, leads 7 mm, soldered on PCB
RthJA
250
K/W
Soldering temperature
Thermal resistance junction/ambient
Rev. 1.1, 02-Dec-13
Document Number: 83479
1
For technical questions, contact: [email protected]
THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT
ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000
VSMB2943SLX01
www.vishay.com
Vishay Semiconductors
120
160
IF - Forward Current (mA)
PV - Power Dissipation (mW)
180
140
120
100
RthJA = 250 K/W
80
60
40
100
80
60
RthJA = 250 K/W
40
20
20
0
0
0
10
21343
20 30
40
50
60
70 80
90
0
100
10
Fig. 1 - Power Dissipation Limit vs. Ambient Temperature
50 60 70 80
90 100
Tamb - Ambient Temperature (°C)
21344
Tamb - Ambient Temperature (°C)
20 30 40
Fig. 2 - Forward Current Limit vs. Ambient Temperature
BASIC CHARACTERISTICS (Tamb = 25 °C, unless otherwise specified)
PARAMETER
Forward voltage
Temperature coefficient of VF
TEST CONDITION
SYMBOL
MIN.
TYP.
MAX.
UNIT
IF = 100 mA, tp = 20 ms
VF
1.15
1.35
1.6
V
IF = 1 A, tp = 100 μs
VF
2.2
V
IF = 1 mA
TKVF
-1.8
mV/K
IF = 100 mA
TKVF
-1.1
mV/K
IR
Not designed for reverse operation
μA
VR = 0 V, f = 1 MHz, E = 0 mW/cm2
CJ
70
IF = 100 mA, tp = 20 ms
Ie
Reverse current
Junction capacitance
Radiant intensity
Radiant power
Temperature coefficient of radiant
power
10
20
pF
30
mW/sr
IF = 1 A, tp = 100 μs
Ie
170
IF = 100 mA, tp = 20 ms
φe
40
mW
IF = 1 mA
TKφe
-1.1
%/K
IF = 100 mA
TKφe
-0.51
%/K
ϕ
± 25
Angle of half intensity
mW/sr
deg
Peak wavelength
IF = 30 mA
λp
Spectral bandwidth
IF = 30 mA
Δλ
25
nm
Temperature coefficient of λp
IF = 30 mA
TKλp
0.25
nm/K
Rise time
IF = 100 mA, 20 % to 80 %
tr
15
ns
Fall time
IF = 100 mA, 20 % to 80 %
tf
15
ns
IDC = 70 mA, IAC = 30 mA pp
fc
23
MHz
Cut-off frequency
Rev. 1.1, 02-Dec-13
920
940
960
nm
Document Number: 83479
2
For technical questions, contact: [email protected]
THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT
ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000
VSMB2943SLX01
www.vishay.com
Vishay Semiconductors
BASIC CHARACTERISTICS (Tamb = 25 °C, unless otherwise specified)
180
Ie rel - Relative Radiant Intensity (%)
100
10
tp = 100 µs
tp/T= 0.001
IF = 1 mA
160
140
120
IF = 100 mA
100
80
60
tp = 20 ms
1
40
0
1
2
3
VF - Forward Voltage (V)
21534
- 60 - 40 - 20
Fig. 3 - Forward Current vs. Forward Voltage
40
60
80
100
106
104
102
IF = 100 mA
100
IF = 10 mA
98
tp = 20 ms
96
94
IF = 1 mA
92
Φe rel - Relative Radiant Power (%)
100
108
90
- 40
- 20
0
20
40
60
80
70
60
50
40
30
20
10
0
840
100
Tamb - Ambient Temperature (°C)
21443
IF = 30 mA
80
90
880
920
960
0°
10°
20°
30°
Ie rel - Relative Radiant Intensity
tp = 100 µs
100
10
1
0.01
0.1
1
IF - Forward Current (A)
Fig. 5 - Radiant Intensity vs. Forward Current
Rev. 1.1, 02-Dec-13
1040
Fig. 7 - Relative Radiant Power vs. Wavelength
1000
0.1
0.001
1000
λ - Wavelength (nm)
21445
Fig. 4 - Relative Forward Voltage vs. Ambient Temperature
Ie - Radiant Intensity (mW/sr)
20
Fig. 6 - Relative Radiant Intensity vs. Ambient Temperature
110
VF, rel - Relative Forward Voltage (%)
0
Tamb - Ambient Temperature (°C)
21444
40°
1.0
0.9
50°
0.8
60°
70°
0.7
ϕ - Angular Displacement
IF - Forward Current (mA)
1000
80°
0.6
0.4
0.2
0
22694
Fig. 8 - Relative Radiant Intensity vs. Angular Displacement
Document Number: 83479
3
For technical questions, contact: [email protected]
THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT
ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000
VSMB2943SLX01
www.vishay.com
Vishay Semiconductors
SOLDER PROFILE
DRYPACK
300
Temperature (°C)
max. 260 °C
245 °C
255 °C
240 °C
217 °C
250
FLOOR LIFE
200
max. 30 s
150
max. 100 s
max. 120 s
100
max. ramp up 3 °C/s max. ramp down 6 °C/s
50
Devices are packed in moisture barrier bags (MBB) to
prevent the products from moisture absorption during
transportation and storage. Each bag contains a desiccant.
Floor life (time between soldering and removing from MBB)
must not exceed the time indicated on MBB label:
Floor life: 4 weeks
Conditions: Tamb < 30 °C, RH < 60 %
Moisture sensitivity level 2a, acc. to J-STD-020.
DRYING
0
0
19841
50
100
150
200
250
300
Time (s)
Fig. 9 - Lead (Pb)-free Reflow Solder Profile acc. J-STD-020
In case of moisture absorption devices should be baked
before soldering. Conditions see J-STD-020 or label.
Devices taped on reel dry using recommended conditions
192 h at 40 °C (+ 5 °C), RH < 5 %.
PACKAGE DIMENSIONS in millimeters: VSMB2943SL
Rev. 1.1, 02-Dec-13
Document Number: 83479
4
For technical questions, contact: [email protected]
THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT
ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000
VSMB2943SLX01
www.vishay.com
Vishay Semiconductors
TAPING AND REEL DIMENSIONS in millimeters: VSMB2943SL
Rev. 1.1, 02-Dec-13
Document Number: 83479
5
For technical questions, contact: [email protected]
THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT
ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000
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Revision: 02-Oct-12
1
Document Number: 91000