VSMY2943SL Datasheet

VSMY2943SL
www.vishay.com
Vishay Semiconductors
High Speed Infrared Emitting Diode, 940 nm,
Surface Emitter Technology
FEATURES
• Package type: surface mount
• Package form: side view
• Dimensions (L x W x H in mm): 2.3 x 2.55 x 2.3
• Peak wavelength: λp = 940 nm
• High reliability
• High radiant power
• Very high radiant intensity
• Angle of half intensity: ϕ = ± 28°
DESCRIPTION
• Suitable for high pulse current operation
SurfLightTM
As part of the
portfolio, the VSMY2943SL is an
infrared, 940 nm, side looking emitting diode based on
GaAlAs surface emitter chip technology with extreme high
radiant intensities, high optical power and high speed,
molded in clear, untinted plastic packages (with lens) for
surface mounting (SMD).
• Package matches with detector VEMD2xx3SLX01 and
VEMT2xx3SLX01 series
• Floor life: 4 weeks, MSL 2a, acc. J-STD-020
• Material categorization: for definitions of compliance
please see www.vishay.com/doc?99912
APPLICATIONS
• Miniature light barrier
• Photointerrupters
• Optical switch
• Emitter source for proximity sensors
• IR illumination
• Remote control
PRODUCT SUMMARY
COMPONENT
Ie (mW/sr)
ϕ (deg)
λp (nm)
tr (ns)
VSMY2943SL
35
± 28
940
10
Note
• Test conditions see table “Basic Characteristics“
ORDERING INFORMATION
ORDERING CODE
PACKAGING
REMARKS
PACKAGE FORM
VSMY2943SL
Tape and reel
MOQ: 3000 pcs, 3000 pcs/reel
Side view
Note
• MOQ: minimum order quantity
Rev. 1.0, 31-Aug-15
Document Number: 84253
1
For technical questions, contact: [email protected]
THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT
ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000
VSMY2943SL
www.vishay.com
Vishay Semiconductors
ABSOLUTE MAXIMUM RATINGS (Tamb = 25 °C, unless otherwise specified)
PARAMETER
TEST CONDITION
SYMBOL
VALUE
UNIT
VR
5
V
Reverse voltage
Forward current
IF
100
mA
Peak forward current
tp/T = 0.5, tp = 100 μs
IFM
200
mA
Surge forward current
tp = 100 μs
IFSM
1
A
PV
200
mW
Power dissipation
Junction temperature
Operating temperature range
Tj
100
°C
Tamb
-40 to +85
°C
Storage temperature range
Soldering temperature
-40 to +100
°C
Tsd
260
°C
J-STD-051, soldered on PCB
RthJA
250
K/W
200
100
IF - Forward Current (mA)
PV - Power Dissipation (mW)
Thermal resistance junction/ambient
Tstg
Acc. figure 7, J-STD-020
150
RthJA = 250 K/W
100
50
0
80
60
RthJA = 250 K/W
40
20
0
0
20
40
60
80
0
100
20
Tamb - Ambient Temperature (°C)
40
60
80
100
Tamb - Ambient Temperature (°C)
Fig. 1 - Power Dissipation Limit vs. Ambient Temperature
Fig. 2 - Forward Current Limit vs. Ambient Temperature
BASIC CHARACTERISTICS (Tamb = 25 °C, unless otherwise specified)
PARAMETER
Forward voltage
Temperature coefficient of VF
TEST CONDITION
SYMBOL
MIN.
TYP.
MAX.
IF = 100 mA, tp = 20 ms
VF
-
1.55
2.0
V
IF = 1 A, tp = 100 μs
VF
-
2.65
-
V
IF = 100 mA
TKVF
-
-2.1
-
mV/K
Reverse current
Junction capacitance
Radiant intensity
Radiant power
Temperature coefficient of radiant
power
IR
VR = 0 V, f = 1 MHz, E = 0
mW/cm2
IF = 100 mA, tp = 20 ms
not designed for reverse operation
UNIT
μA
CJ
-
125
-
pF
Ie
20
35
65
mW/sr
IF = 1 A, tp = 100 μs
Ie
-
300
-
mW/sr
IF = 100 mA, tp = 20 ms
φe
-
55
-
mW
IF = 100 mA
TKφe
-
-0.2
-
%/K
ϕ
-
± 28
-
deg
nm
Angle of half intensity
Peak wavelength
IF = 100 mA
λp
920
940
960
Spectral bandwidth
IF = 30 mA
Δλ
-
40
-
nm
Temperature coefficient of λp
IF = 30 mA
TKλp
-
0.25
-
nm/K
Rise time
IF = 100 mA, 20 % to 80 %
tr
-
10
-
ns
Fall time
IF = 100 mA, 20 % to 80 %
tf
-
10
-
ns
Rev. 1.0, 31-Aug-15
Document Number: 84253
2
For technical questions, contact: [email protected]
THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT
ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000
VSMY2943SL
www.vishay.com
Vishay Semiconductors
BASIC CHARACTERISTICS (Tamb = 25 °C, unless otherwise specified)
Ie, rel - Relative Radiant Intensity (%)
10
1
0.1
0.01
0.001
0
0.5
1
1.5
2
2.5
3
IF = 100 mA
90
80
70
60
50
40
30
20
10
0
3.5
800
VF - Forward Voltage (V)
22097
850
900
0°
Ie rel - Relative Radiant Intensity
Ie - Radiant Intensity (mW/sr)
10°
20°
30°
tp = 100 µs
100
10
1
0.1
0.001
0.01
0.1
SOLDER PROFILE
max. 260 °C
245 °C
255 °C
240 °C
217 °C
70°
0.7
80°
0.6
0.4
0.2
0
Fig. 6 - Relative Radiant Intensity vs. Angular Displacement
Devices are packed in moisture barrier bags (MBB) to
prevent the products from moisture absorption during
transportation and storage. Each bag contains a desiccant.
max. 30 s
Floor life (time between soldering and removing from MBB)
must not exceed the time indicated on MBB label:
max. 100 s
Floor life: 4 weeks
150
max. 120 s
100
max. ramp down 6 °C/s
0
100
150
Conditions: Tamb < 30 °C, RH < 60 %
Moisture sensitivity level 2a, acc. to J-STD-020.
max. ramp up 3 °C/s
200
250
300
Time (s)
Fig. 7 - Lead (Pb)-free Reflow Solder Profile acc. J-STD-020
Rev. 1.0, 31-Aug-15
60°
FLOOR LIFE
200
19841
50°
0.8
DRYPACK
300
50
0.9
22688
Fig. 4 - Radiant Intensity vs. Forward Current
0
40°
1.0
1
IF - Forward Current (A)
Temperature (°C)
1050
Fig. 5 - Relative Radiant Power vs. Wavelength
1000
50
1000
λ - Wavelength (nm)
Fig. 3 - Forward Current vs. Forward Voltage
250
950
ϕ - Angular Displacement
IF - Forward Current (A)
tp = 100 µs
100
DRYING
In case of moisture absorption devices should be baked
before soldering. Conditions see J-STD-020 or label.
Devices taped on reel dry using recommended conditions
192 h at 40 °C (+ 5 °C), RH < 5 %.
Document Number: 84253
3
For technical questions, contact: [email protected]
THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT
ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000
VSMY2943SL
www.vishay.com
Vishay Semiconductors
PACKAGE DIMENSIONS in millimeters: VSMY2943SL
Ø 1.8
0.3
2.55
1.6
0.85
0.4
2.2
2.22
3.8
2.3
0.9
2.3
0.05 ± 0.1
cathode
technical drawings
according to DIN
specifications
Not indicated tolerances ± 0.2
0.5
anode
solder pad proposal
acc. IPC 7351
exceeding cut residues or cut ins allowed
within the tolerance of the leads
0.9
1.2
0.9
4.2
center of pick
and place area
Drawing-No.: 6.544-5410.03-4
Issue: 2; 24.09.14
Rev. 1.0, 31-Aug-15
Document Number: 84253
4
For technical questions, contact: [email protected]
THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT
ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000
VSMY2943SL
www.vishay.com
Vishay Semiconductors
TAPING AND REEL DIMENSIONS in millimeters: VSMY2943SL
Reel
X
unreel direction
Ø
13
±
0.5
Ø 330 ± 1
.5
±0
Ø 62 ± 0.5
2.5
tape position
coming out from reel
3000 pcs/reel
technical drawings
according to DIN
specifications
label posted here
12.4 ± 1.5
Leader and trailer tape
empty (160 mm min.)
parts mounted
direction of pulling out
1.75 ± 0.1
empty (400 mm min.)
5.5 ± 0.05
12
Lead I
Lead II
Device
VSMB2943SLX01
VSMF2893SLX01
Cathode Anode
VSMB2948SL
VEMD2023SLX01
VEMD2523SLX01
VEMT2023SLX01
Collector Emitter
VEMT2523SLX01
VSMY2853SL
Anode Cathode
VSMY2943SL
4 ± 0.1
2 ± 0.05
X 2:1
Ø 1.55 ± 0.05
I
+ 0.3
- 0.1
Terminal position in tape
8 ± 0.1
II
2.85 ± 0.1
Drawing-No.: 9.800-5123.01-4
Issue: 3; 24.09.14
Rev. 1.0, 31-Aug-15
Document Number: 84253
5
For technical questions, contact: [email protected]
THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT
ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000
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www.vishay.com
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Revision: 02-Oct-12
1
Document Number: 91000