VSMY2943SL www.vishay.com Vishay Semiconductors High Speed Infrared Emitting Diode, 940 nm, Surface Emitter Technology FEATURES • Package type: surface mount • Package form: side view • Dimensions (L x W x H in mm): 2.3 x 2.55 x 2.3 • Peak wavelength: λp = 940 nm • High reliability • High radiant power • Very high radiant intensity • Angle of half intensity: ϕ = ± 28° DESCRIPTION • Suitable for high pulse current operation SurfLightTM As part of the portfolio, the VSMY2943SL is an infrared, 940 nm, side looking emitting diode based on GaAlAs surface emitter chip technology with extreme high radiant intensities, high optical power and high speed, molded in clear, untinted plastic packages (with lens) for surface mounting (SMD). • Package matches with detector VEMD2xx3SLX01 and VEMT2xx3SLX01 series • Floor life: 4 weeks, MSL 2a, acc. J-STD-020 • Material categorization: for definitions of compliance please see www.vishay.com/doc?99912 APPLICATIONS • Miniature light barrier • Photointerrupters • Optical switch • Emitter source for proximity sensors • IR illumination • Remote control PRODUCT SUMMARY COMPONENT Ie (mW/sr) ϕ (deg) λp (nm) tr (ns) VSMY2943SL 35 ± 28 940 10 Note • Test conditions see table “Basic Characteristics“ ORDERING INFORMATION ORDERING CODE PACKAGING REMARKS PACKAGE FORM VSMY2943SL Tape and reel MOQ: 3000 pcs, 3000 pcs/reel Side view Note • MOQ: minimum order quantity Rev. 1.0, 31-Aug-15 Document Number: 84253 1 For technical questions, contact: [email protected] THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000 VSMY2943SL www.vishay.com Vishay Semiconductors ABSOLUTE MAXIMUM RATINGS (Tamb = 25 °C, unless otherwise specified) PARAMETER TEST CONDITION SYMBOL VALUE UNIT VR 5 V Reverse voltage Forward current IF 100 mA Peak forward current tp/T = 0.5, tp = 100 μs IFM 200 mA Surge forward current tp = 100 μs IFSM 1 A PV 200 mW Power dissipation Junction temperature Operating temperature range Tj 100 °C Tamb -40 to +85 °C Storage temperature range Soldering temperature -40 to +100 °C Tsd 260 °C J-STD-051, soldered on PCB RthJA 250 K/W 200 100 IF - Forward Current (mA) PV - Power Dissipation (mW) Thermal resistance junction/ambient Tstg Acc. figure 7, J-STD-020 150 RthJA = 250 K/W 100 50 0 80 60 RthJA = 250 K/W 40 20 0 0 20 40 60 80 0 100 20 Tamb - Ambient Temperature (°C) 40 60 80 100 Tamb - Ambient Temperature (°C) Fig. 1 - Power Dissipation Limit vs. Ambient Temperature Fig. 2 - Forward Current Limit vs. Ambient Temperature BASIC CHARACTERISTICS (Tamb = 25 °C, unless otherwise specified) PARAMETER Forward voltage Temperature coefficient of VF TEST CONDITION SYMBOL MIN. TYP. MAX. IF = 100 mA, tp = 20 ms VF - 1.55 2.0 V IF = 1 A, tp = 100 μs VF - 2.65 - V IF = 100 mA TKVF - -2.1 - mV/K Reverse current Junction capacitance Radiant intensity Radiant power Temperature coefficient of radiant power IR VR = 0 V, f = 1 MHz, E = 0 mW/cm2 IF = 100 mA, tp = 20 ms not designed for reverse operation UNIT μA CJ - 125 - pF Ie 20 35 65 mW/sr IF = 1 A, tp = 100 μs Ie - 300 - mW/sr IF = 100 mA, tp = 20 ms φe - 55 - mW IF = 100 mA TKφe - -0.2 - %/K ϕ - ± 28 - deg nm Angle of half intensity Peak wavelength IF = 100 mA λp 920 940 960 Spectral bandwidth IF = 30 mA Δλ - 40 - nm Temperature coefficient of λp IF = 30 mA TKλp - 0.25 - nm/K Rise time IF = 100 mA, 20 % to 80 % tr - 10 - ns Fall time IF = 100 mA, 20 % to 80 % tf - 10 - ns Rev. 1.0, 31-Aug-15 Document Number: 84253 2 For technical questions, contact: [email protected] THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000 VSMY2943SL www.vishay.com Vishay Semiconductors BASIC CHARACTERISTICS (Tamb = 25 °C, unless otherwise specified) Ie, rel - Relative Radiant Intensity (%) 10 1 0.1 0.01 0.001 0 0.5 1 1.5 2 2.5 3 IF = 100 mA 90 80 70 60 50 40 30 20 10 0 3.5 800 VF - Forward Voltage (V) 22097 850 900 0° Ie rel - Relative Radiant Intensity Ie - Radiant Intensity (mW/sr) 10° 20° 30° tp = 100 µs 100 10 1 0.1 0.001 0.01 0.1 SOLDER PROFILE max. 260 °C 245 °C 255 °C 240 °C 217 °C 70° 0.7 80° 0.6 0.4 0.2 0 Fig. 6 - Relative Radiant Intensity vs. Angular Displacement Devices are packed in moisture barrier bags (MBB) to prevent the products from moisture absorption during transportation and storage. Each bag contains a desiccant. max. 30 s Floor life (time between soldering and removing from MBB) must not exceed the time indicated on MBB label: max. 100 s Floor life: 4 weeks 150 max. 120 s 100 max. ramp down 6 °C/s 0 100 150 Conditions: Tamb < 30 °C, RH < 60 % Moisture sensitivity level 2a, acc. to J-STD-020. max. ramp up 3 °C/s 200 250 300 Time (s) Fig. 7 - Lead (Pb)-free Reflow Solder Profile acc. J-STD-020 Rev. 1.0, 31-Aug-15 60° FLOOR LIFE 200 19841 50° 0.8 DRYPACK 300 50 0.9 22688 Fig. 4 - Radiant Intensity vs. Forward Current 0 40° 1.0 1 IF - Forward Current (A) Temperature (°C) 1050 Fig. 5 - Relative Radiant Power vs. Wavelength 1000 50 1000 λ - Wavelength (nm) Fig. 3 - Forward Current vs. Forward Voltage 250 950 ϕ - Angular Displacement IF - Forward Current (A) tp = 100 µs 100 DRYING In case of moisture absorption devices should be baked before soldering. Conditions see J-STD-020 or label. Devices taped on reel dry using recommended conditions 192 h at 40 °C (+ 5 °C), RH < 5 %. Document Number: 84253 3 For technical questions, contact: [email protected] THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000 VSMY2943SL www.vishay.com Vishay Semiconductors PACKAGE DIMENSIONS in millimeters: VSMY2943SL Ø 1.8 0.3 2.55 1.6 0.85 0.4 2.2 2.22 3.8 2.3 0.9 2.3 0.05 ± 0.1 cathode technical drawings according to DIN specifications Not indicated tolerances ± 0.2 0.5 anode solder pad proposal acc. IPC 7351 exceeding cut residues or cut ins allowed within the tolerance of the leads 0.9 1.2 0.9 4.2 center of pick and place area Drawing-No.: 6.544-5410.03-4 Issue: 2; 24.09.14 Rev. 1.0, 31-Aug-15 Document Number: 84253 4 For technical questions, contact: [email protected] THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000 VSMY2943SL www.vishay.com Vishay Semiconductors TAPING AND REEL DIMENSIONS in millimeters: VSMY2943SL Reel X unreel direction Ø 13 ± 0.5 Ø 330 ± 1 .5 ±0 Ø 62 ± 0.5 2.5 tape position coming out from reel 3000 pcs/reel technical drawings according to DIN specifications label posted here 12.4 ± 1.5 Leader and trailer tape empty (160 mm min.) parts mounted direction of pulling out 1.75 ± 0.1 empty (400 mm min.) 5.5 ± 0.05 12 Lead I Lead II Device VSMB2943SLX01 VSMF2893SLX01 Cathode Anode VSMB2948SL VEMD2023SLX01 VEMD2523SLX01 VEMT2023SLX01 Collector Emitter VEMT2523SLX01 VSMY2853SL Anode Cathode VSMY2943SL 4 ± 0.1 2 ± 0.05 X 2:1 Ø 1.55 ± 0.05 I + 0.3 - 0.1 Terminal position in tape 8 ± 0.1 II 2.85 ± 0.1 Drawing-No.: 9.800-5123.01-4 Issue: 3; 24.09.14 Rev. 1.0, 31-Aug-15 Document Number: 84253 5 For technical questions, contact: [email protected] THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. 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