VSMB14940 www.vishay.com Vishay Semiconductors High Speed Infrared Emitting Diodes, 940 nm, GaAlAs, MQW FEATURES • Package type: surface mount • Package form: side view • Dimensions (L x W x H in mm): 3.2 x 2.51 x 1.2 • Peak wavelength: p = 940 nm • High reliability • High radiant power • Very high radiant intensity • Angle of half intensity: = ± 9° • Suitable for high pulse current operation DESCRIPTION • Floor life: 168 h, MSL 3, according to J-STD-020 VSMB14940 is an infrared, 940 nm, side looking emitting diode in GaAlAs multi quantum well (MQW) technology with high radiant power and high speed, molded in clear, untinted PCB based package (with lens) for surface mounting (SMD). • Material categorization: for definitions of compliance please see www.vishay.com/doc?99912 APPLICATIONS • Emitter for remote control • IR touch panels • Photointerrupters • Optical switch PRODUCT SUMMARY COMPONENT Ie (mW/sr) (deg) p (nm) tr (ns) 35 ±9 940 15 VSMB14940 Note • Test conditions see table “Basic Characteristics“ ORDERING INFORMATION ORDERING CODE PACKAGING REMARKS PACKAGE FORM VSMB14940 Tape and reel MOQ: 1500 pcs, 1500 pcs/reel Side view Note • MOQ: minimum order quantity ABSOLUTE MAXIMUM RATINGS (Tamb = 25 °C, unless otherwise specified) SYMBOL VALUE Reverse voltage PARAMETER VR 5 V Forward current IF 70 mA IFSM 500 mA PV 112 mW Surge forward current TEST CONDITION tp = 100 μs Power dissipation Junction temperature UNIT Tj 100 °C Operating temperature range Tamb -40 to +85 °C Storage temperature range Tstg -40 to +100 °C Soldering temperature According fig. 10, J-STD-020 Tsd 260 °C Thermal resistance junction / ambient J-STD-051, soldered on PCB RthJA 580 K/W Rev. 1.2, 19-Nov-15 Document Number: 84210 1 For technical questions, contact: [email protected] THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000 VSMB14940 www.vishay.com Vishay Semiconductors 80 70 100 IF - Forward Current (mA) PV - Power Dissipation (mW) 120 80 60 40 RthJA = 580 K/W 20 60 50 40 30 RthJA = 580 K/W 20 10 0 0 0 20 40 60 80 100 0 20 Tamb - Ambient Temperature (°C) 40 60 80 100 Tamb - Ambient Temperature (°C) Fig. 1 - Power Dissipation Limit vs. Ambient Temperature Fig. 2 - Forward Current Limit vs. Ambient Temperature BASIC CHARACTERISTICS (Tamb = 25 °C, unless otherwise specified) PARAMETER TEST CONDITION IF = 20 mA, tp = 20 ms IF = 70 mA, tp = 20 ms IF = 500 mA, tp = 100 μs IF = 20 mA Forward voltage Temperature coefficient of VF Radiant intensity Radiant power Temperature coefficient of radiant power Angle of half intensity Peak wavelength Spectral bandwidth Temperature coefficient of p Rise time Fall time MIN. 1.05 - TYP. 1.24 1.33 1.8 -1.12 MAX. 1.5 1.6 - UNIT V V V mV/K VR = 5 V IR - - 10 μA VR = 0 V, f = 1 MHz, E = 0 mW/cm2 IF = 20 mA, tp = 20 ms IF = 70 mA, tp = 20 ms IF = 500 mA, tp = 100 μs IF = 70 mA, tp = 20 ms CJ Ie Ie Ie e 6.5 - 38 10.5 35 205 28 14.5 - pF mW/sr mW/sr mW/sr mW IF = 20 mA TKe - 0.39 - %/K IF = 70 mA IF = 30 mA IF = 30 mA IF = 100 mA, 20 % to 80 % IF = 100 mA, 20 % to 80 % p TKp tr tf 920 - ±9 940 30 0.30 15 15 960 - deg nm nm nm/K ns ns Reverse current Junction capacitance SYMBOL VF VF VF TKVF BASIC CHARACTERISTICS (Tamb = 25 °C, unless otherwise specified) 1000 1.34 IF = 20 mA 1.32 VF - Forward Voltage (V) IF - Forward Current (mA) tp = 100 µs 100 10 1.30 1.28 1.26 1.24 1.22 1.20 1 1.0 1.2 1.4 1.6 1.8 2.0 VF - Forward Voltage (V) Fig. 3 - Forward Current vs. Forward Voltage Rev. 1.2, 19-Nov-15 1.18 -60 -40 -20 0 20 40 60 80 100 Tamb - Ambient Temperature (°C) Fig. 4 - Forward Voltage vs. Ambient Temperature Document Number: 84210 2 For technical questions, contact: [email protected] THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000 VSMB14940 Vishay Semiconductors 100 110 108 106 104 102 100 98 96 94 92 -60 -40 -20 0 20 40 60 80 80 IF = 30 mA 70 60 50 40 30 20 10 0 840 100 Tamb - Ambient Temperature (°C) 880 920 960 Ie rel - Relative Radiant Intensity tp = 100 µs 100 10 1 1040 Fig. 8 - Relative Radiant Power vs. Wavelength 0° 1000 1000 λ - Wavelength (nm) 21445 Fig. 5 - Relative Forward Voltage vs. Ambient Temperature Ie - Radiant Intensity (mW/sr) 90 10° 20° 30° 1.2 40° 1.1 1.0 0.9 50° 0.8 60° 70° ϕ - Angular Displacement IF = 20 mA tp = 20 ms Φe rel - Relative Radiant Power (%) VF, rel - Relative Forward Voltage (%) www.vishay.com 80° 0.1 1 10 100 1000 0.7 0.6 0.4 0.2 0 IF - Forward Current (mA) Fig. 6 - Radiant Intensity vs. Forward Current Fig. 9 - Relative Radiant Intensity vs. Angular Displacement Ie - Radiant Intensity (%) 130 IF = 20 mA tp = 20 ms 120 110 100 90 80 70 -60 -40 -20 0 20 40 60 80 100 Tamb - Ambient Temperature (°C) Fig. 7 - Relative Radiant Intensity vs. Ambient Temperature Rev. 1.2, 19-Nov-15 Document Number: 84210 3 For technical questions, contact: [email protected] THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000 VSMB14940 www.vishay.com Vishay Semiconductors SOLDER PROFILE DRYPACK Devices are packed in moisture barrier bags (MBB) to prevent the products from moisture absorption during transportation and storage. Each bag contains a desiccant. Temperature 10 s max. 217 °C 200 °C FLOOR LIFE 255 °C to 260 °C 3 °C/s max. Floor life (time between soldering and removing from MBB) must not exceed the time indicated on MBB label: 6 °C/s max. Floor life: 168 h 150 °C Conditions: Tamb < 30 °C, RH < 60 % 3 °C/s max. Moisture sensitivity level 3, according to J-STD-020. 60 s to 120 s 60 s max. DRYING In case of moisture absorption devices should be baked before soldering. Conditions see J-STD-020 or label. Devices taped on reel dry using recommended conditions 192 h at 40 °C (+ 5 °C), RH < 5 %. Time Fig. 10 - Lead (Pb)-free Reflow Solder Profile According to J-STD-020 PACKAGE DIMENSIONS in millimeters: VSMB14940 1.20 Molding body (lens) 0.60 PC board + 1.60 Soldering terminal 3.20 LED dice Cathode mask 0.60 Polarity 1.90 ± 0.15 2.51 ± 0.15 1.10 Not indicated tolerances ± 0.1 mm Recommended Solder Pad 1.5 (0.059) 5.0 (0.197) Rev. 1.2, 19-Nov-15 1.5 (0.059) Document Number: 84210 4 For technical questions, contact: [email protected] THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000 VSMB14940 www.vishay.com Vishay Semiconductors TAPING AND REEL DIMENSIONS in millimeters: VSMB14940 Rev. 1.2, 19-Nov-15 Document Number: 84210 5 For technical questions, contact: [email protected] THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. 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