VSMB14940 Datasheet

VSMB14940
www.vishay.com
Vishay Semiconductors
High Speed Infrared Emitting Diodes, 940 nm, GaAlAs, MQW
FEATURES
• Package type: surface mount
• Package form: side view
• Dimensions (L x W x H in mm): 3.2 x 2.51 x 1.2
• Peak wavelength: p = 940 nm
• High reliability
• High radiant power
• Very high radiant intensity
• Angle of half intensity:  = ± 9°
• Suitable for high pulse current operation
DESCRIPTION
• Floor life: 168 h, MSL 3, according to J-STD-020
VSMB14940 is an infrared, 940 nm, side looking emitting
diode in GaAlAs multi quantum well (MQW) technology
with high radiant power and high speed, molded in
clear, untinted PCB based package (with lens) for surface
mounting (SMD).
• Material categorization: for definitions of compliance
please see www.vishay.com/doc?99912
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APPLICATIONS
• Emitter for remote control
• IR touch panels
• Photointerrupters
• Optical switch
PRODUCT SUMMARY
COMPONENT
Ie (mW/sr)
 (deg)
p (nm)
tr (ns)
35
±9
940
15
VSMB14940
Note
• Test conditions see table “Basic Characteristics“
ORDERING INFORMATION
ORDERING CODE
PACKAGING
REMARKS
PACKAGE FORM
VSMB14940
Tape and reel
MOQ: 1500 pcs, 1500 pcs/reel
Side view
Note
• MOQ: minimum order quantity
ABSOLUTE MAXIMUM RATINGS (Tamb = 25 °C, unless otherwise specified)
SYMBOL
VALUE
Reverse voltage
PARAMETER
VR
5
V
Forward current
IF
70
mA
IFSM
500
mA
PV
112
mW
Surge forward current
TEST CONDITION
tp = 100 μs
Power dissipation
Junction temperature
UNIT
Tj
100
°C
Operating temperature range
Tamb
-40 to +85
°C
Storage temperature range
Tstg
-40 to +100
°C
Soldering temperature
According fig. 10, J-STD-020
Tsd
260
°C
Thermal resistance junction / ambient
J-STD-051, soldered on PCB
RthJA
580
K/W
Rev. 1.2, 19-Nov-15
Document Number: 84210
1
For technical questions, contact: [email protected]
THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT
ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000
VSMB14940
www.vishay.com
Vishay Semiconductors
80
70
100
IF - Forward Current (mA)
PV - Power Dissipation (mW)
120
80
60
40
RthJA = 580 K/W
20
60
50
40
30
RthJA = 580 K/W
20
10
0
0
0
20
40
60
80
100
0
20
Tamb - Ambient Temperature (°C)
40
60
80
100
Tamb - Ambient Temperature (°C)
Fig. 1 - Power Dissipation Limit vs. Ambient Temperature
Fig. 2 - Forward Current Limit vs. Ambient Temperature
BASIC CHARACTERISTICS (Tamb = 25 °C, unless otherwise specified)
PARAMETER
TEST CONDITION
IF = 20 mA, tp = 20 ms
IF = 70 mA, tp = 20 ms
IF = 500 mA, tp = 100 μs
IF = 20 mA
Forward voltage
Temperature coefficient of VF
Radiant intensity
Radiant power
Temperature coefficient of radiant
power
Angle of half intensity
Peak wavelength
Spectral bandwidth
Temperature coefficient of p
Rise time
Fall time
MIN.
1.05
-
TYP.
1.24
1.33
1.8
-1.12
MAX.
1.5
1.6
-
UNIT
V
V
V
mV/K
VR = 5 V
IR
-
-
10
μA
VR = 0 V, f = 1 MHz, E = 0 mW/cm2
IF = 20 mA, tp = 20 ms
IF = 70 mA, tp = 20 ms
IF = 500 mA, tp = 100 μs
IF = 70 mA, tp = 20 ms
CJ
Ie
Ie
Ie
e
6.5
-
38
10.5
35
205
28
14.5
-
pF
mW/sr
mW/sr
mW/sr
mW
IF = 20 mA
TKe
-
0.39
-
%/K
IF = 70 mA
IF = 30 mA
IF = 30 mA
IF = 100 mA, 20 % to 80 %
IF = 100 mA, 20 % to 80 %

p

TKp
tr
tf
920
-
±9
940
30
0.30
15
15
960
-
deg
nm
nm
nm/K
ns
ns
Reverse current
Junction capacitance
SYMBOL
VF
VF
VF
TKVF
BASIC CHARACTERISTICS (Tamb = 25 °C, unless otherwise specified)
1000
1.34
IF = 20 mA
1.32
VF - Forward Voltage (V)
IF - Forward Current (mA)
tp = 100 µs
100
10
1.30
1.28
1.26
1.24
1.22
1.20
1
1.0
1.2
1.4
1.6
1.8
2.0
VF - Forward Voltage (V)
Fig. 3 - Forward Current vs. Forward Voltage
Rev. 1.2, 19-Nov-15
1.18
-60
-40
-20
0
20
40
60
80
100
Tamb - Ambient Temperature (°C)
Fig. 4 - Forward Voltage vs. Ambient Temperature
Document Number: 84210
2
For technical questions, contact: [email protected]
THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT
ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000
VSMB14940
Vishay Semiconductors
100
110
108
106
104
102
100
98
96
94
92
-60
-40
-20
0
20
40
60
80
80
IF = 30 mA
70
60
50
40
30
20
10
0
840
100
Tamb - Ambient Temperature (°C)
880
920
960
Ie rel - Relative Radiant Intensity
tp = 100 µs
100
10
1
1040
Fig. 8 - Relative Radiant Power vs. Wavelength
0°
1000
1000
λ - Wavelength (nm)
21445
Fig. 5 - Relative Forward Voltage vs. Ambient Temperature
Ie - Radiant Intensity (mW/sr)
90
10°
20°
30°
1.2
40°
1.1
1.0
0.9
50°
0.8
60°
70°
ϕ - Angular Displacement
IF = 20 mA
tp = 20 ms
Φe rel - Relative Radiant Power (%)
VF, rel - Relative Forward Voltage (%)
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80°
0.1
1
10
100
1000
0.7 0.6
0.4
0.2
0
IF - Forward Current (mA)
Fig. 6 - Radiant Intensity vs. Forward Current
Fig. 9 - Relative Radiant Intensity vs. Angular Displacement
Ie - Radiant Intensity (%)
130
IF = 20 mA
tp = 20 ms
120
110
100
90
80
70
-60
-40
-20
0
20
40
60
80
100
Tamb - Ambient Temperature (°C)
Fig. 7 - Relative Radiant Intensity vs. Ambient Temperature
Rev. 1.2, 19-Nov-15
Document Number: 84210
3
For technical questions, contact: [email protected]
THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT
ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000
VSMB14940
www.vishay.com
Vishay Semiconductors
SOLDER PROFILE
DRYPACK
Devices are packed in moisture barrier bags (MBB) to
prevent the products from moisture absorption during
transportation and storage. Each bag contains a desiccant.
Temperature
10 s max.
217 °C
200 °C
FLOOR LIFE
255 °C to 260 °C
3 °C/s max.
Floor life (time between soldering and removing from MBB)
must not exceed the time indicated on MBB label:
6 °C/s max.
Floor life: 168 h
150 °C
Conditions: Tamb < 30 °C, RH < 60 %
3 °C/s max.
Moisture sensitivity level 3, according to J-STD-020.
60 s to 120 s
60 s max.
DRYING
In case of moisture absorption devices should be baked
before soldering. Conditions see J-STD-020 or label.
Devices taped on reel dry using recommended conditions
192 h at 40 °C (+ 5 °C), RH < 5 %.
Time
Fig. 10 - Lead (Pb)-free Reflow Solder Profile
According to J-STD-020
PACKAGE DIMENSIONS in millimeters: VSMB14940
1.20
Molding
body (lens)
0.60
PC board
+
1.60
Soldering
terminal
3.20
LED dice
Cathode mask
0.60
Polarity
1.90 ± 0.15
2.51 ± 0.15
1.10
Not indicated tolerances ± 0.1 mm
Recommended Solder Pad
1.5
(0.059)
5.0
(0.197)
Rev. 1.2, 19-Nov-15
1.5
(0.059)
Document Number: 84210
4
For technical questions, contact: [email protected]
THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT
ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000
VSMB14940
www.vishay.com
Vishay Semiconductors
TAPING AND REEL DIMENSIONS in millimeters: VSMB14940
Rev. 1.2, 19-Nov-15
Document Number: 84210
5
For technical questions, contact: [email protected]
THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT
ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000
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Revision: 02-Oct-12
1
Document Number: 91000