VSMB2943RGX01, VSMB2943GX01 Datasheet

VSMB2943RGX01, VSMB2943GX01
www.vishay.com
Vishay Semiconductors
High Speed Infrared Emitting Diodes, 940 nm, GaAlAs, MQW
VSMB2943RGX01
FEATURES
VSMB2943GX01
• Package type: surface mount
• Package form: GW, RGW
• Dimensions (L x W x H in mm): 2.3 x 2.3 x 2.55
• AEC-Q101 qualified
• Peak wavelength: λp = 940 nm
• High reliability
• High radiant power
DESCRIPTION
• High radiant intensity
VSMB2943X01 series are infrared, 940 nm emitting diodes
in GaAlAs multi quantum well (MQW) technology with high
radiant power and high speed, molded in clear, untinted
plastic packages (with lens) for surface mounting (SMD).
• Angle of half intensity: ϕ = ± 25°
APPLICATIONS
• Terminal configurations: gullwing or reserve gullwing
•
•
•
•
•
•
•
•
• Low forward voltage
• Suitable for high pulse current operation
• Package matches with detector VEMD2xx3X01 and
VEMT2xx3X01 series
IrDA compatible data transmission
Miniature light barrier
IR touch panels
3D TV
Photointerrupters
Optical switch
Control and drive circuits
Shaft encoders
• Floor life: 4 weeks, MSL 2a, acc. J-STD-020
• Material categorization: For definitions of compliance
please see www.vishay.com/doc?99912
PRODUCT SUMMARY
Ie (mW/sr)
ϕ (deg)
λp (nm)
VSMB2943RGX01
20
± 25
940
15
VSMB2943GX01
20
± 25
940
15
COMPONENT
tr (ns)
Note
• Test conditions see table “Basic Characteristics“
ORDERING INFORMATION
ORDERING CODE
PACKAGING
REMARKS
PACKAGE FORM
VSMB2943RGX01
Tape and reel
MOQ: 6000 pcs, 6000 pcs/reel
Reverse gullwing
VSMB2943GX01
Tape and reel
MOQ: 6000 pcs, 6000 pcs/reel
Gullwing
Note
• MOQ: minimum order quantity
ABSOLUTE MAXIMUM RATINGS (Tamb = 25 °C, unless otherwise specified)
PARAMETER
TEST CONDITION
SYMBOL
VALUE
UNIT
Reverse voltage
VR
5
V
Forward current
IF
100
mA
mA
Peak forward current
tp/T = 0.5, tp = 100 μs
IFM
200
Surge forward current
tp = 100 μs
IFSM
1
A
PV
160
mW
°C
Power dissipation
Junction temperature
Tj
100
Operating temperature range
Tamb
-40 to +85
°C
Storage temperature range
Tstg
-40 to +100
°C
according figure 9, J-STD-020
Tsd
260
°C
J-STD-051, leads 7 mm, soldered on PCB
RthJA
250
K/W
Soldering temperature
Thermal resistance junction/ambient
Rev. 1.6, 02-Dec-13
Document Number: 83486
1
For technical questions, contact: [email protected]
THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT
ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000
VSMB2943RGX01, VSMB2943GX01
www.vishay.com
Vishay Semiconductors
120
160
IF - Forward Current (mA)
PV - Power Dissipation (mW)
180
140
120
100
RthJA = 250 K/W
80
60
40
100
80
60
RthJA = 250 K/W
40
20
20
0
0
0
10
21343
20 30
40
50
60
70 80
90
0
100
10
Fig. 1 - Power Dissipation Limit vs. Ambient Temperature
50 60 70 80
90 100
Tamb - Ambient Temperature (°C)
21344
Tamb - Ambient Temperature (°C)
20 30 40
Fig. 2 - Forward Current Limit vs. Ambient Temperature
BASIC CHARACTERISTICS (Tamb = 25 °C, unless otherwise specified)
PARAMETER
Forward voltage
Temperature coefficient of VF
TEST CONDITION
SYMBOL
MIN.
TYP.
MAX.
UNIT
IF = 100 mA, tp = 20 ms
VF
1.15
1.35
1.6
V
IF = 1 A, tp = 100 μs
VF
2.2
V
IF = 1 mA
TKVF
-1.8
mV/K
IF = 100 mA
TKVF
-1.1
mV/K
IR
Not designed for reverse operation
μA
VR = 0 V, f = 1 MHz, E = 0 mW/cm2
CJ
70
IF = 100 mA, tp = 20 ms
Ie
Reverse current
Junction capacitance
Radiant intensity
Radiant power
Temperature coefficient of radiant
power
10
20
pF
30
mW/sr
IF = 1 A, tp = 100 μs
Ie
170
IF = 100 mA, tp = 20 ms
φe
40
mW
IF = 1 mA
TKφe
-1.1
%/K
IF = 100 mA
TKφe
-0.51
%/K
ϕ
± 25
Angle of half intensity
mW/sr
deg
Peak wavelength
IF = 30 mA
λp
Spectral bandwidth
IF = 30 mA
Δλ
25
nm
Temperature coefficient of λp
IF = 30 mA
TKλp
0.25
nm/K
Rise time
IF = 100 mA, 20 % to 80 %
tr
15
ns
Fall time
IF = 100 mA, 20 % to 80 %
tf
15
ns
IDC = 70 mA, IAC = 30 mA pp
fc
23
MHz
Cut-off frequency
Rev. 1.6, 02-Dec-13
920
940
960
nm
Document Number: 83486
2
For technical questions, contact: [email protected]
THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT
ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000
VSMB2943RGX01, VSMB2943GX01
www.vishay.com
Vishay Semiconductors
BASIC CHARACTERISTICS (Tamb = 25 °C, unless otherwise specified)
180
Ie rel - Relative Radiant Intensity (%)
IF - Forward Current (mA)
1000
100
10
tp = 100 µs
tp/T= 0.001
IF = 1 mA
160
140
120
IF = 100 mA
100
80
60
tp = 20 ms
1
40
0
1
2
3
VF - Forward Voltage (V)
21534
- 60 - 40 - 20
Fig. 3 - Forward Current vs. Forward Voltage
20
40
60
80
100
Fig. 6 - Relative Radiant Intensity vs. Ambient Temperature
110
100
108
106
104
102
IF = 100 mA
100
IF = 10 mA
98
tp = 20 ms
96
94
IF = 1 mA
92
Φe rel - Relative Radiant Power (%)
VF, rel - Relative Forward Voltage (%)
0
Tamb - Ambient Temperature (°C)
21444
90
70
60
50
40
30
20
10
0
840
90
- 40
- 20
0
20
40
60
80
100
Tamb - Ambient Temperature (°C)
21443
IF = 30 mA
80
880
Fig. 4 - Relative Forward Voltage vs. Ambient Temperature
920
960
1000
1040
λ - Wavelength (nm)
21445
Fig. 7 - Relative Radiant Power vs. Wavelength
0°
1000
10°
20°
100
10
1
0.1
0.001
0.01
0.1
40°
1.0
0.9
50°
0.8
60°
70°
0.7
ϕ - Angular Displacement
Ie rel - Relative Radiant Intensity
Ie - Radiant Intensity (mW/sr)
30°
tp = 100 µs
80°
1
0.6
IF - Forward Current (A)
0.4
0.2
0
22694
Fig. 5 - Radiant Intensity vs. Forward Current
Rev. 1.6, 02-Dec-13
Fig. 8 - Relative Radiant Intensity vs. Angular Displacement
Document Number: 83486
3
For technical questions, contact: [email protected]
THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT
ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000
VSMB2943RGX01, VSMB2943GX01
www.vishay.com
Vishay Semiconductors
SOLDER PROFILE
DRYPACK
300
Temperature (°C)
max. 260 °C
245 °C
255 °C
240 °C
217 °C
250
200
150
max. 100 s
100
max. ramp up 3 °C/s max. ramp down 6 °C/s
50
0
0
19841
50
100
150
200
250
FLOOR LIFE
Floor life (time between soldering and removing from MBB)
must not exceed the time indicated on MBB label:
Floor life: 4 weeks
Conditions: Tamb < 30 °C, RH < 60 %
Moisture sensitivity level 2a, acc. to J-STD-020.
max. 30 s
max. 120 s
Devices are packed in moisture barrier bags (MBB) to
prevent the products from moisture absorption during
transportation and storage. Each bag contains a desiccant.
300
Time (s)
Fig. 9 - Lead (Pb)-free Reflow Solder Profile acc. J-STD-020
DRYING
In case of moisture absorption devices should be baked
before soldering. Conditions see J-STD-020 or label.
Devices taped on reel dry using recommended conditions
192 h at 40 °C (+ 5 °C), RH < 5 %.
PACKAGE DIMENSIONS in millimeters: VSMB2943RG
Rev. 1.6, 02-Dec-13
Document Number: 83486
4
For technical questions, contact: [email protected]
THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT
ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000
VSMB2943RGX01, VSMB2943GX01
www.vishay.com
Vishay Semiconductors
PACKAGE DIMENSIONS in millimeters: VSMB2943G
Rev. 1.6, 02-Dec-13
Document Number: 83486
5
For technical questions, contact: [email protected]
THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT
ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000
VSMB2943RGX01, VSMB2943GX01
www.vishay.com
Vishay Semiconductors
TAPING AND REEL DIMENSIONS in millimeters: VSMB2943RG
Rev. 1.6, 02-Dec-13
Document Number: 83486
6
For technical questions, contact: [email protected]
THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT
ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000
VSMB2943RGX01, VSMB2943GX01
www.vishay.com
Vishay Semiconductors
TAPING AND REEL DIMENSIONS in millimeters: VSMB2943G
Rev. 1.6, 02-Dec-13
Document Number: 83486
7
For technical questions, contact: [email protected]
THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT
ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000
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Revision: 02-Oct-12
1
Document Number: 91000