VSMB2943RGX01, VSMB2943GX01 www.vishay.com Vishay Semiconductors High Speed Infrared Emitting Diodes, 940 nm, GaAlAs, MQW VSMB2943RGX01 FEATURES VSMB2943GX01 • Package type: surface mount • Package form: GW, RGW • Dimensions (L x W x H in mm): 2.3 x 2.3 x 2.55 • AEC-Q101 qualified • Peak wavelength: λp = 940 nm • High reliability • High radiant power DESCRIPTION • High radiant intensity VSMB2943X01 series are infrared, 940 nm emitting diodes in GaAlAs multi quantum well (MQW) technology with high radiant power and high speed, molded in clear, untinted plastic packages (with lens) for surface mounting (SMD). • Angle of half intensity: ϕ = ± 25° APPLICATIONS • Terminal configurations: gullwing or reserve gullwing • • • • • • • • • Low forward voltage • Suitable for high pulse current operation • Package matches with detector VEMD2xx3X01 and VEMT2xx3X01 series IrDA compatible data transmission Miniature light barrier IR touch panels 3D TV Photointerrupters Optical switch Control and drive circuits Shaft encoders • Floor life: 4 weeks, MSL 2a, acc. J-STD-020 • Material categorization: For definitions of compliance please see www.vishay.com/doc?99912 PRODUCT SUMMARY Ie (mW/sr) ϕ (deg) λp (nm) VSMB2943RGX01 20 ± 25 940 15 VSMB2943GX01 20 ± 25 940 15 COMPONENT tr (ns) Note • Test conditions see table “Basic Characteristics“ ORDERING INFORMATION ORDERING CODE PACKAGING REMARKS PACKAGE FORM VSMB2943RGX01 Tape and reel MOQ: 6000 pcs, 6000 pcs/reel Reverse gullwing VSMB2943GX01 Tape and reel MOQ: 6000 pcs, 6000 pcs/reel Gullwing Note • MOQ: minimum order quantity ABSOLUTE MAXIMUM RATINGS (Tamb = 25 °C, unless otherwise specified) PARAMETER TEST CONDITION SYMBOL VALUE UNIT Reverse voltage VR 5 V Forward current IF 100 mA mA Peak forward current tp/T = 0.5, tp = 100 μs IFM 200 Surge forward current tp = 100 μs IFSM 1 A PV 160 mW °C Power dissipation Junction temperature Tj 100 Operating temperature range Tamb -40 to +85 °C Storage temperature range Tstg -40 to +100 °C according figure 9, J-STD-020 Tsd 260 °C J-STD-051, leads 7 mm, soldered on PCB RthJA 250 K/W Soldering temperature Thermal resistance junction/ambient Rev. 1.6, 02-Dec-13 Document Number: 83486 1 For technical questions, contact: [email protected] THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000 VSMB2943RGX01, VSMB2943GX01 www.vishay.com Vishay Semiconductors 120 160 IF - Forward Current (mA) PV - Power Dissipation (mW) 180 140 120 100 RthJA = 250 K/W 80 60 40 100 80 60 RthJA = 250 K/W 40 20 20 0 0 0 10 21343 20 30 40 50 60 70 80 90 0 100 10 Fig. 1 - Power Dissipation Limit vs. Ambient Temperature 50 60 70 80 90 100 Tamb - Ambient Temperature (°C) 21344 Tamb - Ambient Temperature (°C) 20 30 40 Fig. 2 - Forward Current Limit vs. Ambient Temperature BASIC CHARACTERISTICS (Tamb = 25 °C, unless otherwise specified) PARAMETER Forward voltage Temperature coefficient of VF TEST CONDITION SYMBOL MIN. TYP. MAX. UNIT IF = 100 mA, tp = 20 ms VF 1.15 1.35 1.6 V IF = 1 A, tp = 100 μs VF 2.2 V IF = 1 mA TKVF -1.8 mV/K IF = 100 mA TKVF -1.1 mV/K IR Not designed for reverse operation μA VR = 0 V, f = 1 MHz, E = 0 mW/cm2 CJ 70 IF = 100 mA, tp = 20 ms Ie Reverse current Junction capacitance Radiant intensity Radiant power Temperature coefficient of radiant power 10 20 pF 30 mW/sr IF = 1 A, tp = 100 μs Ie 170 IF = 100 mA, tp = 20 ms φe 40 mW IF = 1 mA TKφe -1.1 %/K IF = 100 mA TKφe -0.51 %/K ϕ ± 25 Angle of half intensity mW/sr deg Peak wavelength IF = 30 mA λp Spectral bandwidth IF = 30 mA Δλ 25 nm Temperature coefficient of λp IF = 30 mA TKλp 0.25 nm/K Rise time IF = 100 mA, 20 % to 80 % tr 15 ns Fall time IF = 100 mA, 20 % to 80 % tf 15 ns IDC = 70 mA, IAC = 30 mA pp fc 23 MHz Cut-off frequency Rev. 1.6, 02-Dec-13 920 940 960 nm Document Number: 83486 2 For technical questions, contact: [email protected] THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000 VSMB2943RGX01, VSMB2943GX01 www.vishay.com Vishay Semiconductors BASIC CHARACTERISTICS (Tamb = 25 °C, unless otherwise specified) 180 Ie rel - Relative Radiant Intensity (%) IF - Forward Current (mA) 1000 100 10 tp = 100 µs tp/T= 0.001 IF = 1 mA 160 140 120 IF = 100 mA 100 80 60 tp = 20 ms 1 40 0 1 2 3 VF - Forward Voltage (V) 21534 - 60 - 40 - 20 Fig. 3 - Forward Current vs. Forward Voltage 20 40 60 80 100 Fig. 6 - Relative Radiant Intensity vs. Ambient Temperature 110 100 108 106 104 102 IF = 100 mA 100 IF = 10 mA 98 tp = 20 ms 96 94 IF = 1 mA 92 Φe rel - Relative Radiant Power (%) VF, rel - Relative Forward Voltage (%) 0 Tamb - Ambient Temperature (°C) 21444 90 70 60 50 40 30 20 10 0 840 90 - 40 - 20 0 20 40 60 80 100 Tamb - Ambient Temperature (°C) 21443 IF = 30 mA 80 880 Fig. 4 - Relative Forward Voltage vs. Ambient Temperature 920 960 1000 1040 λ - Wavelength (nm) 21445 Fig. 7 - Relative Radiant Power vs. Wavelength 0° 1000 10° 20° 100 10 1 0.1 0.001 0.01 0.1 40° 1.0 0.9 50° 0.8 60° 70° 0.7 ϕ - Angular Displacement Ie rel - Relative Radiant Intensity Ie - Radiant Intensity (mW/sr) 30° tp = 100 µs 80° 1 0.6 IF - Forward Current (A) 0.4 0.2 0 22694 Fig. 5 - Radiant Intensity vs. Forward Current Rev. 1.6, 02-Dec-13 Fig. 8 - Relative Radiant Intensity vs. Angular Displacement Document Number: 83486 3 For technical questions, contact: [email protected] THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000 VSMB2943RGX01, VSMB2943GX01 www.vishay.com Vishay Semiconductors SOLDER PROFILE DRYPACK 300 Temperature (°C) max. 260 °C 245 °C 255 °C 240 °C 217 °C 250 200 150 max. 100 s 100 max. ramp up 3 °C/s max. ramp down 6 °C/s 50 0 0 19841 50 100 150 200 250 FLOOR LIFE Floor life (time between soldering and removing from MBB) must not exceed the time indicated on MBB label: Floor life: 4 weeks Conditions: Tamb < 30 °C, RH < 60 % Moisture sensitivity level 2a, acc. to J-STD-020. max. 30 s max. 120 s Devices are packed in moisture barrier bags (MBB) to prevent the products from moisture absorption during transportation and storage. Each bag contains a desiccant. 300 Time (s) Fig. 9 - Lead (Pb)-free Reflow Solder Profile acc. J-STD-020 DRYING In case of moisture absorption devices should be baked before soldering. Conditions see J-STD-020 or label. Devices taped on reel dry using recommended conditions 192 h at 40 °C (+ 5 °C), RH < 5 %. PACKAGE DIMENSIONS in millimeters: VSMB2943RG Rev. 1.6, 02-Dec-13 Document Number: 83486 4 For technical questions, contact: [email protected] THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000 VSMB2943RGX01, VSMB2943GX01 www.vishay.com Vishay Semiconductors PACKAGE DIMENSIONS in millimeters: VSMB2943G Rev. 1.6, 02-Dec-13 Document Number: 83486 5 For technical questions, contact: [email protected] THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000 VSMB2943RGX01, VSMB2943GX01 www.vishay.com Vishay Semiconductors TAPING AND REEL DIMENSIONS in millimeters: VSMB2943RG Rev. 1.6, 02-Dec-13 Document Number: 83486 6 For technical questions, contact: [email protected] THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000 VSMB2943RGX01, VSMB2943GX01 www.vishay.com Vishay Semiconductors TAPING AND REEL DIMENSIONS in millimeters: VSMB2943G Rev. 1.6, 02-Dec-13 Document Number: 83486 7 For technical questions, contact: [email protected] THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. 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