VSMF2893RGX01, VSMF2893GX01 www.vishay.com Vishay Semiconductors High Speed Infrared Emitting Diodes, 890 nm, GaAlAs, DH FEATURES • Package type: surface mount VSMF2893RGX01 • Package form: GW, RGW VSMF2893GX01 • Dimensions (L x W x H in mm): 2.3 x 2.3 x 2.55 • AEC-Q101 qualified • Peak wavelength: p = 890 nm • High reliability • High radiant power • High radiant intensity • Angle of half intensity: = ± 25° • Low forward voltage • Suitable for high pulse current operation • Terminal configurations: gullwing or reserve gullwing DESCRIPTION • Package matches with detector VEMD2xx3X01 and VEMT2xx3X01 series VSMF2893X01 series are infrared, 890 nm emitting diodes in GaAlAs (DH) technology with high radiant power and high speed, molded in clear, untinted plastic packages (with lens) for surface mounting (SMD). • Floor life: 4 weeks, MSL 2a, acc. J-STD-020 • Material categorization: For definitions of compliance please see www.vishay.com/doc?99912 APPLICATIONS • IrDA compatible data transmission • 3D TV • IR touch panels • Miniature light barrier • Photointerrupters • Optical switch • Shaft encoders • IR emitter source for proximity applications PRODUCT SUMMARY Ie (mW/sr) (deg) p (nm) VSMF2893RGX01 20 ± 25 890 30 VSMF2893GX01 20 ± 25 890 30 COMPONENT tr (ns) Note • Test conditions see table “Basic Characteristics“ ORDERING INFORMATION ORDERING CODE PACKAGING REMARKS PACKAGE FORM VSMF2893RGX01 Tape and reel MOQ: 6000 pcs, 6000 pcs/reel Reverse gullwing VSMF2893GX01 Tape and reel MOQ: 6000 pcs, 6000 pcs/reel Gullwing Note • MOQ: minimum order quantity Rev. 1.0, 26-Feb-13 Document Number: 83484 1 For technical questions, contact: [email protected] THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000 VSMF2893RGX01, VSMF2893GX01 www.vishay.com Vishay Semiconductors ABSOLUTE MAXIMUM RATINGS (Tamb = 25 °C, unless otherwise specified) SYMBOL VALUE Reverse voltage PARAMETER TEST CONDITION VR 5 UNIT V Forward current IF 100 mA mA Peak forward current tp/T = 0.5, tp 100 μs IFM 200 Surge forward current tp = 100 μs IFSM 1 A PV 160 mW Power dissipation Junction temperature Tj 100 °C Operating temperature range Tamb - 40 to + 85 °C Storage temperature range Tstg - 40 to + 100 °C Soldering temperature Acc. figure 9, J-STD-020 Tsd 260 °C Thermal resistance junction/ambient J-STD-051, leads 7 mm, soldered on PCB RthJA 250 K/W 120 160 IF - Forward Current (mA) PV - Power Dissipation (mW) 180 140 120 100 RthJA = 250 K/W 80 60 40 100 80 60 RthJA = 250 K/W 40 20 20 0 0 0 10 21343 20 30 40 50 60 70 80 90 100 Tamb - Ambient Temperature (°C) 0 10 Fig. 1 - Power Dissipation Limit vs. Ambient Temperature 20 30 40 50 60 70 80 90 100 Tamb - Ambient Temperature (°C) 21344 Fig. 2 - Forward Current Limit vs. Ambient Temperature BASIC CHARACTERSITICS (Tamb = 25 °C, unless otherwise specified) PARAMETER Forward voltage Temperature coefficient of VF Reverse current Junction capacitance Radiant intensity Radiant power Temperature coefficient of e TEST CONDITION SYMBOL MIN. TYP. MAX. UNIT IF = 100 mA, tp = 20 ms VF 1.25 1.4 1.6 V IF = 1 A, tp = 100 μs VF 2.3 V IF = 1 mA TKVF - 1.8 mV/K IF = 100 mA TKVF - 1.1 VR = 5 V IR VR = 0 V, f = 1 MHz, E = 0 mW/cm2 CJ IF = 100 mA, tp = 20 ms Ie mV/K 10 μA 30 mW/sr 125 10 20 pF IF = 1 A, tp = 100 μs Ie 180 mW/sr IF = 100 mA, tp = 20 ms e 40 mW IF = 100 mA TKe - 0.35 %/K ± 25 Angle of half intensity deg Peak wavelength IF = 30 mA p Spectral bandwidth IF = 30 mA 40 nm Temperature coefficient of p IF = 30 mA TKp 0.25 nm/K Rise time IF = 100 mA, 20 % to 80 % tr 30 ns Fall time IF = 100 mA, 20 % to 80 % tf 30 ns IDC = 70 mA, IAC = 30 mA pp fc 12 MHz Cut-off frequency Rev. 1.0, 26-Feb-13 870 890 910 nm Document Number: 83484 2 For technical questions, contact: [email protected] THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000 VSMF2893RGX01, VSMF2893GX01 www.vishay.com Vishay Semiconductors BASIC CHARACTERSITICS (Tamb = 25 °C, unless otherwise specified) 1.25 Φe rel - Relative Radiant Power 100 tp = 100 µs tp/T = 0.001 10 1.0 0.75 0.5 0.25 1 0 1 2 3 0 800 4 Fig. 3 - Forward Current vs. Forward Voltage Fig. 6 - Relative Radiant Power vs. Wavelength 0° 110 VF, rel - Relative Forward Voltage (%) 1000 900 λ - Wavelength (nm) 20082 VF - Forward Voltage (V) 18873_1 10° 20° 30° Ie rel - Relative Radiant Intensity 108 106 104 102 IF = 100 mA 100 IF = 10 mA 98 tp = 20 ms 96 94 IF = 1 mA 92 40° 1.0 0.9 50° 0.8 60° 70° 0.7 ϕ - Angular Displacement IF - Forward Current (mA) 1000 80° 90 - 40 - 20 0 20 40 60 80 100 Tamb - Ambient Temperature (°C) 21443 0.6 0.4 0.2 0 22694 Fig. 4 - Relative Forward Voltage vs. Ambient Temperature Fig. 7 - Relative Radiant Intensity vs. Angular Displacement 0.02 100 10 1 0.1 0.001 0.01 0.1 IF - Forward Current (A) Fig. 5 - Radiant Intensity vs. Forward Current Rev. 1.0, 26-Feb-13 Tamb < 50 °C tp/T = 0.01 1000 tp = 100 µs IF - Forward Current (mA) Ie - Radiant Intensity (mW/sr) 1000 1 0.05 0.1 0.2 0.5 100 0.01 16031 0.1 1 10 100 tp - Pulse Duration (ms) Fig. 8 - Pulse Forward Current vs. Pulse Duration Document Number: 83484 3 For technical questions, contact: [email protected] THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000 VSMF2893RGX01, VSMF2893GX01 www.vishay.com Vishay Semiconductors SOLDER PROFILE DRYPACK 300 255 °C 240 °C 217 °C 250 Temperature (°C) max. 260 °C 245 °C FLOOR LIFE 200 max. 30 s 150 max. 100 s max. 120 s 100 max. ramp up 3 °C/s max. ramp down 6 °C/s 50 Devices are packed in moisture barrier bags (MBB) to prevent the products from moisture absorption during transportation and storage. Each bag contains a desiccant. Floor life (time between soldering and removing from MBB) must not exceed the time indicated on MBB label: Floor life: 4 weeks Conditions: Tamb < 30 °C, RH < 60 % Moisture sensitivity level 2a, acc. to J-STD-020. DRYING 0 0 19841 50 100 150 200 250 300 Time (s) Fig. 9 - Lead (Pb)-free Reflow Solder Profile acc. J-STD-020 In case of moisture absorption devices should be baked before soldering. Conditions see J-STD-020 or label. Devices taped on reel dry using recommended conditions 192 h at 40 °C (+ 5 °C), RH < 5 %. PACKAGE DIMENSIONS in millimeters: VSMF2893RGX01 Rev. 1.0, 26-Feb-13 Document Number: 83484 4 For technical questions, contact: [email protected] THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000 VSMF2893RGX01, VSMF2893GX01 www.vishay.com Vishay Semiconductors PACKAGE DIMENSIONS in millimeters: VSMF2893GX01 Rev. 1.0, 26-Feb-13 Document Number: 83484 5 For technical questions, contact: [email protected] THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000 VSMF2893RGX01, VSMF2893GX01 www.vishay.com Vishay Semiconductors TAPING AND REEL DIMENSIONS in millimeters: VSMF2893RGX01 Rev. 1.0, 26-Feb-13 Document Number: 83484 6 For technical questions, contact: [email protected] THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000 VSMF2893RGX01, VSMF2893GX01 www.vishay.com Vishay Semiconductors TAPING AND REEL DIMENSIONS in millimeters: VSMF2893GX01 Rev. 1.0, 26-Feb-13 Document Number: 83484 7 For technical questions, contact: [email protected] THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. 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