V I S H AY I N T E R T E C H N O L O G Y, I N C . INFRARED EMITTERS AND PHOTO DETECTORS Optoelectronics - Low Profile, Surface Mount Side-View Package VSMB10940X01, VEMD10940FX01, VSMB11940X01, VEMD11940FX01 AEC-Q101 Qualified, High-Speed Emitters and Photodiodes for IR Touch Panels MINIATURE SIDE-VIEW IR EMITTERS AND DETECTORS The low-profile VSMB10940X01 / VEMD10940FX01 emitters and VSMB11940X01 / VEMD11940FX01 photodiodes are optimized for IR touch panels in a wide range of consumer, medical, industrial and automotive applications. The 0.6 mm profile of the emitters allows for slimmer designs, while the larger photo sensitive area of the photodiodes enables a higher signal output. FEATURES AND BENEFITS Emitters – VSMB10940X01, VSMB11940X01 • Emitting wavelength, λp = 940 nm • Height: 1.0 mm / 0.6 mm • Angle of half intensity, ϕ = ± 75° VEMD10940FX01 • Radiant Intensity, Ie = 1 mW/sr at 20 mA VEMD10940FX01 Vishay Semiconductors • Operating temperature range: –40 to +85 °C Vishay Semiconductors EMD10940FX01 diode APPLICATIONS Detectors – VEMD10940X01, VEMD11940X01 • Wavelength of peak sensitivity, λp = 950 nm • Height: 1.0 mm / 0.6 mm • Reverse light current, Ira = 3 µA / 1.1 µA • Low dark current, Ira = 1 nA • Daylight filter • Operating temperature range: –40 to +100 °C ay Semiconductors • IR touch display based devices such as printer displays, ebook reader, smart phones, tablets, RES e type: Surface mount ultrabooks, navigation devices, and automotive dashboard displays. e form: Side view RESOURCES rface mount VSMB10940X01, VSMB11940X01, VEMD10940FX01, VEMD11940FX01 ions (L x W x H in mm): 3 x•2 xDatasheets: 1 de view nt • For technical questions please contact [email protected] 101 W x Hqualified in mm): 3 x 2 x 1 diant sensitivity • Material categorization: For definitions of compliance please see ed m): 3 x 2 x 1 http://www.vishay.com/doc?99912 ttivity blocking filter matched with 830 nm nm IR emitters filter matched with 830 nm sponse times ters fhed half sensitivity: es with 830 nm ϕ = ± 75° One of the World’s Largest Manufacturers of Discrete Semiconductors and Passive Components e matched itivity: ϕ = ± 75° with IR emitter 0940X01 ed with IR emitter 1/2 VMN-PT0405-1403 e: 168 h, MSL 3,PRODUCT according SHEET to J-STD-020 ± 75° reflow soldering hb)-free IR emitter MSL 3, according to J-STD-020 THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT ARE SUBJECT TO lowcategorization: For definitions of compliance soldering SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000 see www.vishay.com/doc?99912 ording to J-STD-020 zation: For definitions of compliance V I S H AY I N T E R T E C H N O L O G Y, I N C . INFRARED EMITTERS AND PHOTO DETECTORS VSMB10940X01, VEMD10940FX01, VSMB11940X01, VEMD11940FX01 Offered in clear, untinted plastic packages, the VSMB10940X01 and VSMB11940X01 infrared emitters feature GaAIAs multi quantum well (MQW) technology. The devices provide high radiant intensity of 1 mW/sr typical at 20 mA, a low forward voltage of 1.3 at 20 mA, and fast switching times of 15 ns. The VEMD10940FX01 and VEMD11940FX01 photodiodes feature a daylight blocking filter matched with 830 nm to 950 nm IR emitters, and offer reverse light current of 1.1 µA and 3 µA, respectively. Both devices provide high radiant sensitivity from 780 to 1050 nm, low dark current of 1 nA, and 950 nm wavelength of peak sensitivity. All devices offer an ultra-wide ± 75° angle of half intensity. INFRARED EMITTERS ( VSMB10940X01 — VSMB11940X01 — ) 920 960 1000 1040 λ - Wavelength (nm) 10 0Relative Radiant Power vs. 840 880 920 960 0.8 60° 40° 1.0 70° 0.7 0.9 0.8 50° 80° 0.6 0.4 0.2 Relative Radiant Intensity vs. Angular Displacement (Horizontal) 0.6 1.0 0.4 0.2 0.6 0.2 0.5 0.1 0.4 0 0.3 600 0.2 700 800 900 1000 1100 λ - Wavelength (nm) 0.1 Relative Spectral Sensitivity vs. Wavelength Ie, rel - RelativeIe,Radiant Sensitivity Radiant Sensitivity rel - Relative 0.8 0.4 0.7 0.3 0 600 700 800 900 1000 0° 10° 20° 0° 10° 20° 1.0 30° 40° 30° 0.8 60° 40° 1.0 70° 0.9 50° 80° 0.8 0.7 0.6 0.4 0.2 60° 0 70° Relative Radiant Sensitivity vs. Angular Displacement (Horizontal) λ - Wavelength (nm) 0.4 0.2 80° 0 0° 10° 20° 30° 40° 30° 50° 0.8 60° 40° 1.0 70° 0.7 0.9 0.8 50° 80° 0.6 0.4 0.2 60° 0 70° 0.7 Relative Radiant Intensity vs. Angular Displacement (Vertical) 0.4 0.2 80° 0 0° 10° 20° 0° 10° 20° Relative Radiant Intensity vs. Angular Displacement (Vertical) 30° 40° 30° 1.0 50° 0.9 60° 40° 0.8 1.0 70° 0.9 50° 80° 0.8 0.7 0.6 0.4 0.2 60° 0 Relative Radiant Sensitivity vs. Angular Displacement (Vertical) 0.7 0.6 Relative Radiant Sensitivity vs. Angular Displacement (Horizontal) Relative Spectral Sensitivity vs. Wavelength 20° 0.9 0.6 50° 0.9 0.7 0.6 1100 80° 1.0 0 Relative Radiant Intensity vs. Angular Displacement (Horizontal) VEMD11940FX01 —) vs. Wavelength 0.9 Relative Radiant Power PHOTODIODES ( VEMD10940FX01 — 0.7 1.0 0.6 0.9 0.5 60° 0 70° 0.7 1040 0.8 40° 30° 50° Wavelength 1000 20° 0.9 λ - Wavelength (nm) 21445 10° 10° Φ - Angular Displacement Φ - Angular Displacement 880 21445 20 0° 0° Φ - Angular Displacement Φ - Angular Displacement IF = 30 mA 1.0 30° Ie, rel - RelativeIe,Radiant Intensity Radiant Intensity rel - Relative 30840 IF = 30 mA 20° Ie, rel - RelativeIe,Radiant Sensitivity Radiant Sensitivity rel - Relative 70 100 60 90 50 80 40 70 30 60 20 50 10 40 0 10° Φ - Angular Displacement Φ - Angular Displacement 80 0° Φ - Angular Displacement Φ - Angular Displacement 90 Ie, rel - RelativeIe,Radiant Intensity Radiant Intensity rel - Relative Φ e rel - RelativeΦRadiant PowerRadiant (%) Power (%) e rel - Relative 100 S(λ)rel - Relative Sensitivity S(λ)Spectral Spectral Sensitivity rel - Relative Optoelectronics - Low Profile, Surface Mount Side-View Package ANGULAR DISPLACEMENT, INTENSITY AND SENSITIVITY 0.4 0.2 70° 80° 0 Relative Radiant Sensitivity vs. Angular Displacement (Vertical) KEY SPECIFICATIONS INFRARED EMITTERS VSMB10940X01 VSMB11940X01 PHOTODIODES VEMD10940FX01 VEMD11940FX01 Peak wavelength 940 nm Wavelength of peak sensitivity 950 nm Technology GaAIAs multi quantum well Technology Silicon PIN photodiode Radiant intensity @ 20 mA 1 mW/sr typical Reverse light current Forward voltage @ 20 mA 1.3 V Dark current Switching time Case size (mm) PRODUCT SHEET 15 ns 3 x 2 x 1 3.0 µA 1 nA Switching time 3 x 2 x 0.6 Case size (mm) 2/2 1.1 µA 1000 ns 3 x 2 x 1 3 x 2 x 0.6 VMN-PT0405-1403 THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000