VEMD11940FX01 www.vishay.com Vishay Semiconductors Silicon PIN Photodiode FEATURES • Package type: surface mount • Package form: Side view • Dimensions (L x W x H in mm): 3 x 2 x 0.6 • AEC-Q101 qualified • High radiant sensitivity • Daylight blocking filter matched with 830 nm to 950 nm IR emitters • Angle of half sensitivity: ϕ = ± 75° • Package matched VSMB11940X01 with IR emitter • Floor life: 168 h, MSL 3, according to J-STD-020 DESCRIPTION VEMD11940FX01 is a high speed and high sensitive PIN photodiode in a miniature side looking, surface mount package (SMD) with daylight blocking filter. Filter is matched with IR emitters operating at wavelength of 830 nm to 950 nm. The photo sensitive area of the chip is 0.053 mm2. • Lead (Pb)-free reflow soldering • Material categorization: for definitions of compliance please see www.vishay.com/doc?99912 APPLICATIONS • High speed photo detector • Infrared remote control • Infrared data transmission • Photo interrupters • IR touch panels PRODUCT SUMMARY COMPONENT VEMD11940FX01 Ira (μA) ϕ (deg) λ0.5 (nm) 1.13 ± 75 780 to 1050 Note • Test conditions see table “Basic Characteristics” ORDERING INFORMATION ORDERING CODE PACKAGING REMARKS PACKAGE FORM VEMD11940FX01 Tape and reel MOQ: 4000 pcs, 4000 pcs/reel Side view Note • MOQ: minimum order quantity ABSOLUTE MAXIMUM RATINGS (Tamb = 25 °C, unless otherwise specified) PARAMETER TEST CONDITION Reverse voltage Power dissipation Tamb ≤ 25 °C Junction temperature SYMBOL VALUE VR 60 UNIT V PV 104 mW Tj 100 °C Operating temperature range Tamb -40 to +100 °C Storage temperature range Tstg -40 to +100 °C According to reflow solder profile fig. 8 Tsd 260 °C According to J-STD-051 RthJA 580 K/W Soldering temperature Thermal resistance junction / ambient Rev. 1.1, 04-Dec-15 Document Number: 84194 1 For technical questions, contact: [email protected] THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000 VEMD11940FX01 www.vishay.com Vishay Semiconductors BASIC CHARACTERISTICS (Tamb = 25 °C, unless otherwise specified) PARAMETER TEST CONDITION SYMBOL MIN. TYP. MAX. UNIT IF = 50 mA VF - 1.7 - V IR = 100 μA, E = 0 V(BR) 32 - - V VR = 10 V, E = 0 Iro - <1 10 nA VR = 0 V, f = 1 MHz, E = 0 CD - 1.1 - pF VR = 3 V, f = 1 MHz, E = 0 CD - 0.5 - pF Ee = 1 mW/cm2, λ = 950 nm Vo - 350 - mV Temperature coefficient of Vo Ee = 1 mW/cm2, λ = 950 nm TKVo - -2.7 - mV/K Short circuit current Ee = 1 mW/cm2, λ = 950 nm Ik - 1.13 - μA Temperature coefficient of Ik Ee = 1 mW/cm2, λ = 950 nm TKIk - 0.1 - %/K Ee = 1 mW/cm2, λ = 950 nm, VR = 5 V Ira 0.8 1.13 1.8 μA ϕ - ± 75 - deg Wavelength of peak sensitivity λp - 950 - nm Range of spectral bandwidth λ0.5 - 780 to 1050 - nm Forward voltage Breakdown voltage Reverse dark current Diode capacitance Open circuit voltage Reverse light current Angle of half sensitivity Rise time VR = 10 V, RL = 1 kΩ, λ = 820 nm tr - 100 - ns Fall time VR = 10 V, RL = 1 kΩ, λ = 820 nm tf - 100 - ns BASIC CHARACTERISTICS (Tamb = 25 °C, unless otherwise specified) 100 Ira - Reverse Light Current (µA) Reverse Dark Current (nA) 1000 100 10 1 0 20 40 80 60 100 VR = 5 V λ = 950 nm 10 1 0.1 0.01 120 Fig. 1 - Reverse Dark Current vs. Ambient Temperature 1 10 Fig. 3 - Reverse Light Current vs. Irradiance 1.4 2.5 Cj - Junction Capacitance (pF) Ira, rel - Relative Reverse Light Current 0.1 Ee - Irradiance (mW/cm2) Tamb - Ambient Temperature (°C) VR = 5 V λ = 950 nm 1.2 1.0 0.8 0.6 0 94 8416 20 40 60 80 100 Tamb - Ambient Temperature (°C) Fig. 2 - Relative Reverse Light Current vs. Ambient Temperature Rev. 1.1, 04-Dec-15 2.0 1.5 1.0 0.5 0.0 - 10 - 9 - 8 - 7 - 6 - 5 - 4 - 3 - 2 - 1 0 1 VF - Forward Voltage (V) Fig. 4 - Diode Capacitance vs. Reverse Voltage Document Number: 84194 2 For technical questions, contact: [email protected] THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000 VEMD11940FX01 www.vishay.com Vishay Semiconductors 0° 10° 20° 30° Ie, rel - Relative Radiant Sensitivity 0.9 0.8 0.7 0.6 0.5 0.4 0.3 0.2 0.1 vertical 40° 1.0 0.9 50° 0.8 60° 70° 0.7 ϕ - Angular Displacement S(λ)rel - Relative Spectral Sensitivity 1.0 80° 0 600 700 800 900 1000 1100 0.6 0.4 0.2 0 λ - Wavelength (nm) Fig. 5 - Relative Spectral Sensitivity vs. Wavelength 0° 10° Fig. 7 - Relative Radiant Sensitivity vs. Angular Displacement Vertical 20° horizontal 40° 1.0 0.9 50° 0.8 60° 70° 0.7 ϕ - Angular Displacement Ie, rel - Relative Radiant Sensitivity 30° 80° 0.6 0.4 0.2 0 Fig. 6 - Relative Radiant Sensitivity vs. Angular Displacement Horizontal REFLOW SOLDER PROFILE DRYPACK Devices are packed in moisture barrier bags (MBB) to prevent the products from moisture absorption during transportation and storage. Each bag contains a desiccant. FLOOR LIFE Floor life (time between soldering and removing from MBB) must not exceed the time indicated on MBB label: Floor life: 168 h Conditions: Tamb < 30 °C, RH < 60 % Moisture sensitivity level 3, according to J-STD-020. DRYING Fig. 8 - Lead (Pb)-free Reflow Solder Profile According to J-STD-020D Rev. 1.1, 04-Dec-15 In case of moisture absorption devices should be baked before soldering. Conditions see J-STD-020 or label. Devices taped on reel dry using recommended conditions 192 h at 40 °C (+ 5 °C), RH < 5 %. Document Number: 84194 3 For technical questions, contact: [email protected] THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000 VEMD11940FX01 www.vishay.com Vishay Semiconductors PACKAGE DIMENSIONS in millimeters 2 ± 0.2 Optical center Polarity identification Cathode 3 1.5 2 0.4 0.4 C A 1 ± 0.2 Anode 0.9 0.6 Recommended Footprint 0.9 2 5 1.5 0.2 Technical drawings according to DIN specification. Drawing- No: 6.550-5327.01-4 Issue: Prel. 26.11.2013 Rev. 1.1, 04-Dec-15 Not indicated tolerances ± 0.1 mm Document Number: 84194 4 For technical questions, contact: [email protected] THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000 VEMD11940FX01 www.vishay.com Vishay Semiconductors TAPING AND REEL DIMENSIONS in millimeters Reel-design is representative for different types Unreel direction Empty trailer 160 mm min. Ø 1 .5 17 8 Em Ø Co pty lea A 13 ve r ta de pe r1 40 00 0m mm m mi mi n. n. 8 .4 Label posted here 14 .4 Device Cathode 2 4 8 3.5 1.75 Ø 1.55 0.9 0.23 H - H (5 : 1) A H H Ø1 Drawing refers to following types: VSMB11940 VEMD11940F Rev. 1.1, 04-Dec-15 4 Drawing No. 9.800-5126.01-4; Issue: Prel. 23.05.2013 Document Number: 84194 5 For technical questions, contact: [email protected] THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000 Legal Disclaimer Notice www.vishay.com Vishay Disclaimer ALL PRODUCT, PRODUCT SPECIFICATIONS AND DATA ARE SUBJECT TO CHANGE WITHOUT NOTICE TO IMPROVE RELIABILITY, FUNCTION OR DESIGN OR OTHERWISE. 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