VSMB11940X01 www.vishay.com Vishay Semiconductors High Speed Infrared Emitting Diode, 940 nm, GaAlAs, MQW FEATURES • • • • • • • • • • • • • • • DESCRIPTION VSMB11940X01 is an infrared, 940 nm side looking emitting diode in GaAlAs multi quantum well (MQW) technology with high radiant power and high speed, molded in clear, untinted plastic package (with lens) for surface mounting (SMD). Package type: Surface mount Package form: Side view Dimensions (L x W x H in mm): 3 x 2 x 0.6 AEC-Q101 qualified Peak wavelength: λp = 940 nm High reliability High radiant power High radiant intensity High speed Angle of half intensity: ϕ = ± 75° Low forward voltage Package matches with detector VEMD11940FX01 Floor life: 168 h, MSL 3, acc. J-STD-020 Lead (Pb)-free reflow soldering Material categorization: For definitions of compliance please see www.vishay.com/doc?99912 APPLICATIONS • IR touch panel • High power emitter for low space applications • High performance transmissive or reflective sensors PRODUCT SUMMARY COMPONENT Ie (mW/sr), 20 mA ϕ (deg) λp (nm) tr (ns) 1 ± 75 940 15 VSMB11940X01 Note • Test conditions see table “Basic Characteristics“ ORDERING INFORMATION ORDERING CODE PACKAGING REMARKS PACKAGE FORM VSMB11940X01 Tape and reel MOQ: 4000 pcs, 4000 pcs/reel side view Note • MOQ: minimum order quantity ABSOLUTE MAXIMUM RATINGS (Tamb = 25 °C, unless otherwise specified) SYMBOL VALUE Reverse voltage PARAMETER TEST CONDITION VR 5 UNIT V Forward current IF 65 mA Peak forward current tp/T = 0.5, tp = 100 μs IFM 130 mA Surge forward current tp = 100 μs IFSM 500 mA Power dissipation PV 104 mW Junction temperature Tj 100 °C Operating temperature range Tamb -40 to +85 °C Storage temperature range Tstg -40 to +100 °C according to fig. 9, J-STD-020 Tsd 580 °C J-STD-051, leads 7 mm, soldered on PCB RthJA 450 K/W Soldering temperature Thermal resistance junction/ambient Rev. 1.1, 21-Feb-14 Document Number: 84193 1 For technical questions, contact: [email protected] THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000 VSMB11940X01 www.vishay.com Vishay Semiconductors 80 100 IF - Forward Current (mA) PV - Power Dissipation (mW) 120 80 60 RthJA = 580 K/W 40 20 0 70 60 50 40 30 RthJA = 580 K/W 20 10 0 0 20 40 60 80 0 100 Tamb - Ambient Temperature (°C) 20 40 60 80 100 Tamb - Ambient Temperature (°C) Fig. 1 - Power Dissipation Limit vs. Ambient Temperature Fig. 2 - Forward Current Limit vs. Ambient Temperature BASIC CHARACTERISTICS (Tamb = 25 °C, unless otherwise specified) PARAMETER Forward voltage Temperature coefficient of VF Reverse current TEST CONDITION SYMBOL MIN. TYP. MAX. IF = 20 mA, tp = 20 ms VF 1.1 1.24 1.5 IF = 65 mA, tp = 20 ms VF 1.35 UNIT V V IF = 500 mA, tp = 100 μs VF 1.8 V IF = 1 mA TKVF -1.5 mV/K VR = 5 V IR VR = 0 V, f = 1 MHz, E = 0 mW/cm2 CJ IF = 20 mA, tp = 20 ms Ie IF = 65 mA, tp = 20 ms Ie 3.2 mW/sr IF = 500 mA, tp = 100 μs Ie 20 mW/sr IF = 100 mA, tp = 20 ms φe 35 mW IF = 100 mA TKφe -0.47 %/K Angle of half intensity - horizontal ϕh ± 77.5 deg Angle of half intensity - vertical ϕv ± 72.5 deg nm Junction capacitance Radiant intensity Radiant power Temperature coefficient of radiant power 10 21 0.5 1.0 μA pF 1.5 mW/sr Peak wavelength IF = 30 mA λp 940 Spectral bandwidth IF = 30 mA Δλ 25 nm Temperature coefficient of λp IF = 30 mA TKλp 0.3 nm Rise time IF = 100 mA, 20 % to 80 % tr 15 ns Fall time IF = 100 mA, 20 % to 80 % tf 15 ns Rev. 1.1, 21-Feb-14 Document Number: 84193 2 For technical questions, contact: [email protected] THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000 VSMB11940X01 www.vishay.com Vishay Semiconductors BASIC CHARACTERISTICS (Tamb = 25 °C, unless otherwise specified) 1000 Ie, rel - Relative Radiant Intensity (%) 160 100 10 1 IF = 100 mA 140 120 100 80 60 1.0 1.2 1.4 1.6 1.8 2.0 - 60 - 40 - 20 Fig. 3 - Forward Current vs. Forward Voltage 110 40 80 60 100 100 108 106 104 102 IF = 100 mA 100 IF = 10 mA 98 tp = 20 ms 96 94 IF = 1 mA 92 90 - 40 - 20 0 20 40 60 80 70 60 50 40 30 20 10 0 840 100 Tamb - Ambient Temperature (°C) 21443 IF = 30 mA 80 90 880 920 960 1000 1040 λ - Wavelength (nm) 21445 Fig. 4 - Relative Forward Voltage vs. Ambient Temperature Fig. 7 - Relative Radiant Power vs. Wavelength 0° 100 10° 20° 30° tp = 100 μs Ie, rel - Relative Radiant Intensity Ie - Radiant Intensity (mW/sr) 20 Fig. 6 - Relative Radiant Intensity vs. Ambient Temperature Φe rel - Relative Radiant Power (%) VF, rel - Relative Forward Voltage (%) 0 Tamb - Ambient Temperature (°C) VF - Forward Voltage (V) 10 1 0.1 vertical horizontal 40° 1.0 0.9 50° 0.8 60° 70° 0.7 ϕ - Angular Displacement IF - Forward Current (mA) tp = 100 μs 80° 0.01 1 10 100 1000 0.6 0.4 0.2 0 IF - Forward Current (mA) Fig. 5 - Radiant Intensity vs. Forward Current Rev. 1.1, 21-Feb-14 Fig. 8 - Relative Radiant Intensity vs. Angular Displacement Document Number: 84193 3 For technical questions, contact: [email protected] THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000 VSMB11940X01 www.vishay.com Vishay Semiconductors REFLOW SOLDER PROFILE DRYPACK Devices are packed in moisture barrier bags (MBB) to prevent the products from moisture absorption during transportation and storage. Each bag contains a desiccant. FLOOR LIFE Time between soldering and removing from MBB must not exceed the time indicated in J-STD-020: Moisture sensitivity: level 3 Floor life: 168 h Conditions: Tamb < 30 °C, RH < 60 % DRYING Fig. 9 - Lead (Pb)-free Reflow Solder Profile acc. J-STD-020 In case of moisture absorption devices should be baked before soldering. Conditions see J-STD-020 or label. Devices taped on reel dry using recommended conditions 192 h at 40 °C (+ 5 °C), RH < 5 %. PACKAGE DIMENSIONS in millimeters 2 ± 0.2 Optical center Polarity identification Cathode 3 1.5 2 0.4 0.4 C A 1 ± 0.2 Anode 0.9 0.6 Recommended Footprint 0.9 2 5 1.5 0.2 Technical drawings according to DIN specification. Drawing- No: 6.550-5327.01-4 Issue: Prel. 26.11.2013 Rev. 1.1, 21-Feb-14 Not indicated tolerances ± 0.1 mm Document Number: 84193 4 For technical questions, contact: [email protected] THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000 VSMB11940X01 www.vishay.com Vishay Semiconductors TAPING AND REEL DIMENSIONS in millimeters Reel-design is representative for different types Unreel direction Empty trailer 160 mm min. Ø 1 .5 17 8 Em Ø Co pty lea A 13 ve r ta de pe r1 40 00 0m mm m mi mi n. n. 8 .4 Label posted here 14 .4 Device Cathode 2 4 8 3.5 1.75 Ø 1.55 0.9 0.23 H - H (5 : 1) A H H Ø1 Drawing refers to following types: VSMB11940 VEMD11940F Rev. 1.1, 21-Feb-14 4 Drawing No. 9.800-5126.01-4; Issue: Prel. 23.05.2013 Document Number: 84193 5 For technical questions, contact: [email protected] THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000 Legal Disclaimer Notice www.vishay.com Vishay Disclaimer ALL PRODUCT, PRODUCT SPECIFICATIONS AND DATA ARE SUBJECT TO CHANGE WITHOUT NOTICE TO IMPROVE RELIABILITY, FUNCTION OR DESIGN OR OTHERWISE. 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We confirm that all the products identified as being compliant to IEC 61249-2-21 conform to JEDEC JS709A standards. Revision: 02-Oct-12 1 Document Number: 91000