HA-2541/883 Wideband, Fast Settling, Unity Gain Stable, Operational Amplifier July 1994 Features Description • This Circuit is Processed in Accordance to MIL-STD883 and is Fully Conformant Under the Provisions of Paragraph 1.2.1. The HA-2541/883 is the first unity gain stable monolithic operational amplifier to achieve 40MHz unity gain bandwidth. A major addition to the Intersil series of high speed, wideband op amps, the HA-2541/883 is designed for video and pulse applications requiring stable amplifier response at low closed loop gains. • Unity Gain Bandwidth . . . . . . . . . . . . . . . . 40MHz (Min) • High Slew Rate . . . . . . . . . . . . . . . . . . . . . 200V/µs (Min) 250V/µs (Typ) The uniqueness of the HA-2541/883 is that its slew rate and bandwidth characteristics are specified at unity gain. Historically, high slew rate, wide bandwidth and unity gain stability have been incompatible features for a monolithic operational amplifier. But features such as 250V/µs slew rate and 40MHz unity gain bandwidth clearly show that this is not the case for the HA-2541/883. These features, along with 90ns settling time to 0.1%, make this product an excellent choice for high speed data acquisition systems. • Low Offset Voltage. . . . . . . . . . . . . . . . . . . . . 2mV (Max) • Fast Settling Time (0.1%) . . . . . . . . . . . . . . . 90ns (Typ) • Power Bandwidth. . . . . . . . . . . . . . . . . . . . . 3MHz (Min) 4MHz (Typ) • Output Voltage Swing . . . . . . . . . . . . . . . . . . ±10V (Min) • Unity Gain Stability • Monolithic Bipolar Dielectric Isolation Construction Ordering Information Applications PART NUMBER • Pulse and Video Amplifiers • Wideband Amplifiers HA2-2541/883 TEMPERATURE RANGE -55oC to +125oC PACKAGE 12 Pin Can • High Speed Sample and Hold Circuits • Fast, Precise D/A Converters • High Speed A/D Input Buffer Pinout HA-2541/883 (METAL CAN) TOP VIEW V+ OUTPUT NC 12 11 1 NC BAL 10 2 + 3 9 NC 8 4 BAL V- 5 NC 7 6 NC -IN +IN CASE TIED TO V- CAUTION: These devices are sensitive to electrostatic discharge; follow proper IC Handling Procedures. 1-888-INTERSIL or 321-724-7143 | Copyright © Intersil Corporation 1999 3-28 511026-883 File Number 3698 Spec Number Specifications HA-2541/883 Absolute Maximum Ratings Thermal Information Voltage Between V+ and V- Terminals . . . . . . . . . . . . . . . . . . . . 35V Differential Input Voltage . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 6V Voltage at Either Input Terminal . . . . . . . . . . . . . . . . . . . . . . V+ to VPeak Output Current (< 10% Duty Cycle) . . . . . . . . . . . . . . . . 50mA Junction Temperature (TJ) . . . . . . . . . . . . . . . . . . . . . . . . . . +175oC Storage Temperature Range . . . . . . . . . . . . . . . . . -65oC to +150oC ESD Rating. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . <2000V Lead Temperature (Soldering 10s) . . . . . . . . . . . . . . . . . . . . +300oC Thermal Resistance θJA θJC Metal Can Package . . . . . . . . . . . . . . . . . 65oC/W 34oC/W Package Power Dissipation Limit at +75oC for TJ ≤ +175oC Metal Can Package . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 1.54W Package Power Dissipation Derating Factor Above +75oC Metal Can Package . . . . . . . . . . . . . . . . . . . . . . . . . . . 15.4mW/oC CAUTION: Stresses above those listed in “Absolute Maximum Ratings” may cause permanent damage to the device. This is a stress only rating and operation of the device at these or any other conditions above those indicated in the operational sections of this specification is not implied. Operating Conditions Operating Temperature Range . . . . . . . . . . . . . . . . -55oC to +125oC Operating Supply Voltage . . . . . . . . . . . . . . . . . . . . . . . . . ±12V to ±15V VINCM ≤ 1/2 (V+ - V-) RL ≥ 1kΩ TABLE 1. DC ELECTRICAL PERFORMANCE CHARACTERISTICS Device Tested at: VSUPPLY = ±15V, RSOURCE = 100Ω, RLOAD = 100kΩ, VOUT = 0V, Unless Otherwise Specified. LIMITS PARAMETERS SYMBOL Input Offset Voltage VIO Input Bias Current +IB -IB Input Offset Current Common Mode Range IIO +CMR -CMR Large Signal Voltage Gain +AVOL -AVOL Common Mode Rejection Ratio +CMRR -CMRR Output Voltage Swing +VOUT -VOUT CONDITIONS VCM = 0V VCM = 0V, +RS = 1.1kΩ, -RS = 100Ω VCM = 0V, +RS = 100Ω, -RS = 1.1kΩ VCM = 0V, +RS = 1.1kΩ, -RS = 1.1kΩ V+ = 5V, V- = -25V V+ = 25V, V- = -5V VOUT = 0V and +10V, RL = 1kΩ VOUT = 0V and -10V, RL = 1kΩ ∆VCM = +10V, V+ = +5V, V- = -25V, VOUT = -10V ∆VCM = -10V, V+ = +25V, V- = -5V, VOUT = +10V RL = 1kΩ RL = 1kΩ GROUP A SUBGROUPS TEMPERATURE MIN MAX UNITS 1 +25oC -2 2 mV 2, 3 +125oC, -55oC -6 6 mV 1 +25oC -35 35 µA 2, 3 +125oC, -55oC -50 50 µA 1 +25oC -35 35 µA 2, 3 +125oC, -55oC -50 50 µA 1 +25oC -7 7 µA -9 9 µA 2, 3 +125oC, -55oC 1 +25oC 10 - V 2, 3 +125oC, -55oC 10 - V 1 +25oC - -10 V 2, 3 +125oC, -55oC - -10 V 4 +25oC 10 - kV/V 5 - kV/V 5, 6 +125oC, -55oC 4 +25oC 10 - kV/V 5, 6 +125oC, -55oC 5 - kV/V 1 +25oC 70 - dB 2, 3 +125oC, -55oC 70 - dB 1 +25oC 70 - dB 70 - dB 2, 3 +125oC, -55oC 1 +25oC 10 - V 2, 3 +125oC, -55oC 10 - V 1 +25oC - -10 V - -10 V 2, 3 +125oC, -55oC Spec Number 3-29 511026-883 Specifications HA-2541/883 TABLE 1. DC ELECTRICAL PERFORMANCE CHARACTERISTICS (Continued) Device Tested at: VSUPPLY = ±15V, RSOURCE = 100Ω, RLOAD = 100kΩ, VOUT = 0V, Unless Otherwise Specified. LIMITS PARAMETERS Output Current SYMBOL CONDITIONS +IOUT TEMPERATURE MIN MAX UNITS 1 +25oC 10 - mA 1, 3 +125oC, -55oC 10 - mA VOUT = -10V -IOUT Quiescent Power Supply Current GROUP A SUBGROUPS VOUT = +10V +ICC VOUT = 0V, IOUT = 0mA -ICC VOUT = 0V, IOUT = 0mA o 1 +25 C - -10 mA 1, 3 +125oC, -55oC - -10 mA 1 +25oC - 39 mA o 2, 3 +125 C, -55 C - 39 mA 1 +25oC -39 - mA -39 - mA +125oC, 2, 3 Power Supply Rejection Ratio ∆VSUP = 10V, V+ = +5V, V- = -15V, V+ = +15V, V- = -15V +PSRR ∆VSUP = 10V, V+ = +15V, V- = -5V, V+ = +15V, V- = -15V -PSRR Offset Voltage Adjustment o -55oC 1 +25oC 70 - dB 2, 3 +125oC, -55oC 70 - dB 1 +25oC 70 - dB 70 - dB +125oC, 2, 3 -55oC +VIOAdj Note 1 1 +25oC VIO-1 - mV -VIOAdj Note 1 1 +25oC VIO+1 - mV NOTE: 1. Offset adjustment range is [VIO (Measured) ±1mV] minimum referred to output. This test is for functionality only to assure adjustment through 0V. TABLE 2. AC ELECTRICAL PERFORMANCE CHARACTERISTICS Table 2 Intentionally Left Blank. See A.C. Specifications in Table 3 TABLE 3. ELECTRICAL PERFORMANCE CHARACTERISTICS Device Characterized at: VSUPPLY = ±15V, RLOAD = 1kΩ, CLOAD = 10pF, AV = 1V/V, Unless Otherwise Specified. LIMITS PARAMETERS SYMBOL Differential Input Resistance RIN Unity Gain Bandwidth Slew Rate NOTES TEMPERATURE MIN MAX UNITS VCM = 0V 1 +25oC 40 - kΩ VO = 90mV 1 +25oC 40 - MHz +SR VOUT = -3V to +3V 1 +25oC 200 - V/µs -SR VOUT = +3V to -3V 1 +25oC 200 - V/µs 1, 2 +25oC 3 - MHz UGBW CONDITIONS Full Power Bandwidth FPBW VPEAK = 10V Minimum Closed Loop Stable Gain CLSG RL = 1kΩ, CL = 10pF 1 -55oC to +125oC 1 - V/V TR VOUT = 0V to +200mV 1, 4 +25oC - 20 ns TF VOUT = 0V to -200mV 1, 4 +25oC - 20 ns Rise and Fall Time Spec Number 3-30 511026-883 Specifications HA-2541/883 TABLE 3. ELECTRICAL PERFORMANCE CHARACTERISTICS (Continued) Device Characterized at: VSUPPLY = ±15V, RLOAD = 1kΩ, CLOAD = 10pF, AV = 1V/V, Unless Otherwise Specified. LIMITS PARAMETERS Overshoot SYMBOL CONDITIONS NOTES TEMPERATURE MIN MAX UNITS +OS VOUT = 0V to +200mV 1 +25oC - 50 % VOUT = 0V to -200mV 1 +25oC - 50 % Open Loop 1 +25oC - 25 Ω - 1.17 W -OS Output Resistance ROUT Quiescent Power Consumption PC VOUT = 0V, IOUT = 0mA 1, 3 -55oC to +125oC NOTES: 1. Parameters listed in Table 3 are controlled via design or process parameters and are not directly tested at final production. These parameters are lab characterized upon initial design release, or upon design changes. These parameters are guaranteed by characterization based upon data from multiple production runs which reflect lot to lot and within lot variation. 2. Full Power Bandwidth guarantee based on Slew Rate measurement using FPBW = Slew Rate/(2πVPEAK). 3. Quiescent Power Consumption based upon Quiescent Supply Current test maximum. (No load on outputs.) 4. Measured between 10% and 90% points. TABLE 4. ELECTRICAL TEST REQUIREMENTS MIL-STD-883 TEST REQUIREMENTS SUBGROUPS (SEE TABLE 1) Interim Electrical Parameters (Pre Burn-In) 1 Final Electrical Test Parameters 1 (Note 1), 2, 3, 4, 5, 6 Group A Test Requirements 1, 2, 3, 4, 5, 6 Groups C and D Endpoints 1 NOTE: 1. PDA applies to Subgroup 1 only. Spec Number 3-31 511026-883 HA-2541/883 Die Characteristics DIE DIMENSIONS: 80 x 90 x 19 mils ± 1 mils 2020 x 2280 x 483µm ± 25.4µm METALLIZATION: Type: Al, 1% Cu Thickness: 16kÅ ± 2kÅ GLASSIVATION: Type: Nitride(Si3N4) over Silox (SiO2, 5% Phos.) Silox Thickness: 12kÅ ± 2kÅ Nitride Thickness: 3.5kÅ ± 1.5kÅ WORST CASE CURRENT DENSITY: 5.3 x 104 A/cm2 SUBSTRATE POTENTIAL (Powered Up): VTRANSISTOR COUNT: 41 PROCESS: Bipolar Dielectric Isolation Metallization Mask Layout HA-2541/883 -IN +IN BAL V- NC BAL OUTPUT V+ All Intersil semiconductor products are manufactured, assembled and tested under ISO9000 quality systems certification. Intersil products are sold by description only. Intersil Corporation reserves the right to make changes in circuit design and/or specifications at any time without notice. Accordingly, the reader is cautioned to verify that data sheets are current before placing orders. Information furnished by Intersil is believed to be accurate and reliable. However, no responsibility is assumed by Intersil or its subsidiaries for its use; nor for any infringements of patents or other rights of third parties which may result from its use. No license is granted by implication or otherwise under any patent or patent rights of Intersil or its subsidiaries. For information regarding Intersil Corporation and its products, see web site http://www.intersil.com Spec Number 3-32 511026-883