HA-5135/883 Precision Operational Amplifier July 1994 Features Description • This Circuit is Processed in Accordance to MIL-STD883 and is Fully Conformant Under the Provisions of Paragraph 1.2.1. The HA-5135/883 is a precision operational amplifier manufactured using a combination of key technological advancements to provide outstanding input characteristics. • Low Offset Drift . . . . . . . . . . . . . . . . . . . 0.4µV/oC (Max) A high Beta input stage is combined with laser trimming, dielectric isolation, and matching techniques to produce 75µV (max) input offset voltage and 0.4µV/oC (max) input offset voltage average drift. Other features enhanced by this process include 9nV/√Hz (typ) Input Noise Voltage, 4nA Input Bias Current (max) and 120dB Open Loop Gain (min). • Low Offset Voltage. . . . . . . . . . . . . . . . . . . . .75µV (Max) • High Gain . . . . . . . . . . . . . . . . . . . . 120dB(1MV/V) (Min) • High CMRR . . . . . . . . . . . . . . . . . . . . . . . . . . 106dB (Min) • High PSRR . . . . . . . . . . . . . . . . . . . . . . . . . . . 94dB (Min) These features coupled with 106dB CMRR and 94dB PSRR make HA-5135/883 an ideal device for precision D.C. instrumentation amplifiers. Excellent input characteristics in conjunction with 0.6MHz (min) bandwidth and 0.5V/µs (min) slew rate, makes this amplifier extremely useful for precision integrator and biomedical amplifier designs. These amplifiers are also well suited for precision data acquisition and for accurate threshold detector applications. • Low Supply Current. . . . . . . . . . . . . . . . . . 1.7mA (Max) • Low Noise Voltage Density at 1kHz . . . . . 9nV/√Hz (Max) • Low Noise Current Density at 1kHz . . . . 0.4pA/√Hz (Max) Applications • High Gain Instrumentation Ordering Information • Precision Data Acquisition • Precision Integrators PART NUMBER • Biomedical Amplifiers • Precision Threshold Detectors TEMPERATURE RANGE PACKAGE HA2-5135/883 -55oC to +125oC 8 Pin Can HA7-5135/883 -55oC to +125oC 8 Lead CerDIP HA4-5135/883 -55oC to +125oC 20 Lead Ceramic LCC Pinouts BAL 2 1 8 BAL1 NC BAL1 HA-5135/883 (METAL CAN) TOP VIEW BAL2 HA-5135/883 (CLCC) TOP VIEW NC HA-5135/883 (CERDIP) TOP VIEW -IN 2 7 V+ 3 2 1 20 19 +IN 3 V- 4 + 6 OUT 5 BAL1 NC BAL1 8 BAL 2 18 NC 17 V+ 16 NC NC 4 -IN 5 NC 6 +IN 7 15 OUT 8 14 NC - CAUTION: These devices are sensitive to electrostatic discharge; follow proper IC Handling Procedures. http://www.intersil.com or 407-727-9207 | Copyright © Intersil Corporation 1999 3-139 + 2 +IN V+ 6 OUT 5 3 BAL1 4 V- (CASE) NC BAL1 10 11 12 13 NC 9 V- NC NC + -IN 7 1 511016-883 File Number 3731.1 Spec Number Specifications HA-5135/883 Absolute Maximum Ratings Thermal Information Voltage Between V+ and V- Terminals . . . . . . . . . . . . . . . . . . . . 40V Differential Input Voltage (Note 2) . . . . . . . . . . . . . . . . . . . . . . . . 7V Voltage at Either Input Terminal . . . . . . . . . . . . . . . . . . . . . . V+ to VInput Current . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 25mA Output Current . . . . . . . . . . . . . . . . . . . .Full Short Circuit Protection Junction Temperature (TJ) . . . . . . . . . . . . . . . . . . . . . . . . . . +175oC Storage Temperature Range . . . . . . . . . . . . . . . . . -65oC to +150oC ESD Rating. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . <2000V Lead Temperature (Soldering 10s) . . . . . . . . . . . . . . . . . . . . +300oC Thermal Resistance θJA θJC CerDIP Package . . . . . . . . . . . . . . . . . . . 115oC/W 28oC/W Ceramic LCC Package . . . . . . . . . . . . . . 65oC/W 15oC/W Metal Can Package . . . . . . . . . . . . . . . . . 155oC/W 67oC/W Package Power Dissipation Limit at +75oC for TJ ≤ +175oC CerDIP Package . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 870mW Ceramic LCC Package . . . . . . . . . . . . . . . . . . . . . . . . . . . . 1.54W Metal Can Package . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 645mW Package Power Dissipation Derating Factor Above +75oC CerDIP Package . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 8.7mW/oC Ceramic LCC Package . . . . . . . . . . . . . . . . . . . . . . . . 15.4mW/oC Metal Can Package . . . . . . . . . . . . . . . . . . . . . . . . . . . . 6.5mW/oC CAUTION: Stresses above those listed in “Absolute Maximum Ratings” may cause permanent damage to the device. This is a stress only rating and operation of the device at these or any other conditions above those indicated in the operational sections of this specification is not implied. Operating Conditions Operating Temperature Range . . . . . . . . . . . . . . . . -55oC to +125oC Operating Supply Voltage . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . ±15V VINCM ≤ 1/2 (V+ - V-) RL ≥ 600Ω TABLE 1. DC ELECTRICAL PERFORMANCE CHARACTERISTICS Device Tested at: VSUPPLY = ±15V, RSOURCE = 50Ω, RLOAD = 100kΩ, VOUT = 0V, Unless Otherwise Specified. PARAMETERS Input Offset Voltage Input Bias Current SYMBOL VIO IB CONDITIONS VCM = 0V VCM = 0V, RS = 10kΩ, 50Ω LIMITS GROUP A SUBGROUPS TEMPERATURE 1 +25oC -75 75 µV 2, 3 +125oC, -55oC -130 130 µV 1 +25oC -4 4 nA -6 6 nA -4 4 nA -5.5 5.5 nA 12 - V 12 - V - -12 V - -12 V 120 - kV/V 2, 3 +125oC, -55oC MIN MAX UNITS +I B + – I B - ---------------------------2 Input Offset Current Common Mode Range IIO +CMR -CMR Large Signal Voltage Gain +AVOL -AVOL Common Mode Rejection Ratio +CMRR -CMRR Output Voltage Swing +VOUT VCM = 0V, +RS = 10kΩ, -RS = 10kΩ V+ = +3V, V- = -27V V+ = +27V, V- = -3V VOUT = 0V and +10V, RL = 2kΩ VOUT = 0V and -10V, RL = 2kΩ ∆VCM = +10V, V+ = +5V, V- = -25V, VOUT = -10V ∆VCM = -10V, V+ = +25V, V- = -5V, VOUT = +10V RL = 600Ω 1 2, 3 1 2, 3 1 2, 3 4 5, 6 RL = 600Ω -55oC +25oC +125oC, -55oC +25oC +125oC, -55oC +25oC +125oC, -55oC 120 - kV/V +25oC 120 - kV/V 5, 6 +125oC, -55oC 120 - kV/V 1 +25oC 106 - dB 106 - dB 2, 3 +125oC, -55oC 1 +25oC 106 - dB 2, 3 +125oC, -55oC 106 - dB 4 +25oC 10 - V 10 - V - -10 V 4 5, 6 Output Current +125oC, 4 5, 6 -VOUT +25oC +125oC, -55oC +25oC +125oC, -55oC - -10 V +IOUT VOUT = -10V 4 +25oC 15 - mA -IOUT VOUT = +10V 4 +25oC - -15 mA Spec Number 3-140 511016-883 Specifications HA-5135/883 TABLE 1. DC ELECTRICAL PERFORMANCE CHARACTERISTICS (Continued) Device Tested at: VSUPPLY = ±15V, RSOURCE = 50Ω, RLOAD = 100kΩ, VOUT = 0V, Unless Otherwise Specified. PARAMETERS SYMBOL Quiescent Power Supply Current CONDITIONS +ICC TEMPERATURE 1 +25oC - 1.7 mA 2, 3 +125oC, -55oC - 1.7 mA 1 +25oC -1.7 - mA -1.7 - mA VOUT = 0V, IOUT = 0mA -ICC VOUT = 0V, IOUT = 0mA +125oC, 2, 3 Power Supply Rejection Ratio ∆VSUP = 10V, V+ = +5V, V- = -15V, V+ = +15V, V- = -15V +PSRR ∆VSUP = 10V, V+ = +15V, V- = -5V, V+ = +15V, V- = -15V -PSRR Offset Voltage Adjustment +VIOAdj Note 1 MAX UNITS 1 94 - dB 2, 3 +125oC, -55oC 94 - dB 1 +25oC 94 - dB 94 - dB VIO-1 - mV +125oC, 2, 3 -55oC +25oC 1 Note 1 -55oC MIN +25oC +125oC, 2, 3 -VIOAdj LIMITS GROUP A SUBGROUPS -55oC VIO-1 - mV 1 +25oC VIO+1 - mV 2, 3 +125oC, -55oC VIO+1 - mV NOTES: 1. Offset adjustment range is [VIO (Measured ±1mV] minimum referred to output. This test is for functionality only to assure adjustment through 0V. 2. The input stage has series 500Ω resistors along with back to back diodes. This provides large differential input voltage protection for a slight increase in noise voltage. TABLE 2. AC ELECTRICAL PERFORMANCE CHARACTERISTICS Device Tested at: VSUPPLY = ±15V, RSOURCE = 50Ω, RLOAD = 2kΩ, CLOAD = 50pF, AVCL = +1V/V, Unless Otherwise Specified. PARAMETERS SYMBOL Slew Rate CONDITIONS LIMITS GROUP A SUBGROUPS TEMPERATURE MIN MAX UNITS 0.5 - V/µs 0.5 - V/µs +SR VOUT = -3V to +3V, VIN S.R. ≤ 25V/µs 7 +25oC -SR VOUT = +3V to -3V, VIN S.R. ≤ 25V/µs 7 +25oC TABLE 3. ELECTRICAL PERFORMANCE CHARACTERISTICS Device Characterized at: VSUPPLY = ±15V, RLOAD = 2kΩ, CLOAD = 50pF, AV = +1V/V, Unless Otherwise Specified. LIMITS PARAMETERS Average Offset Voltage Drift Differential Input Resistance SYMBOL CONDITIONS NOTES TEMPERATURE -55oC to +125oC MIN MAX UNITS - 1.3 µV/oC VIOTC VCM = 0V 1 RIN VCM = 0V 1 +25oC 20 - MΩ Average Offset Current Drift IIOTC Versus Temperature VCM = 0V 1 -55oC to +125oC - 40 pA/oC Average Bias Current Drift IBTC Versus Temperature VCM = 0V 1 -55oC to +125oC - 40 pA/oC EN RS = 20Ω, fO = 1kHz 1 +25oC - 11 nV/√Hz Input Noise Voltage Density Spec Number 3-141 511016-883 Specifications HA-5135/883 TABLE 3. ELECTRICAL PERFORMANCE CHARACTERISTICS (Continued) Device Characterized at: VSUPPLY = ±15V, RLOAD = 2kΩ, CLOAD = 50pF, AV = +1V/V, Unless Otherwise Specified. LIMITS PARAMETERS SYMBOL Input Noise Current Density IN CONDITIONS NOTES TEMPERATURE MIN MAX UNITS RS = 2MΩ, fO = 1kHz 1 +25oC - 0.4 pA/√Hz 1 +25oC 600 - kHz 1, 2 +25oC 8 - kHz +1 - V/V - 80 Ω - 51 mW Unity Gain Bandwidth UGBW VOUT = ±100mV, fO at -3dB Full Power Bandwidth FPBW VPEAK = 10V Minimum Closed Loop Stable Gain CLSG RL = 2kΩ, CL = 50pF 1 Output Resistance ROUT Open Loop 1 Power Consumption PC VOUT = 0V, IOUT = 0mA 1, 3 -55oC to +125oC +25oC -55oC to +125oC NOTES: 1. Parameters listed in Table 3 are controlled via design or process parameters and are not directly tested at final production. These parameters are lab characterized upon initial design release, or upon design changes. These parameters are guaranteed by characterization based upon data from multiple production runs which reflect lot to lot and within lot variation. 2. Full Power Bandwidth guarantee based on Slew Rate measurement using FPBW = Slew Rate/(2πVPEAK). 3. Power Consumption based upon Quiescent Supply Current test maximum. (No load on outputs.) TABLE 4. ELECTRICAL TEST REQUIREMENTS MIL-STD-883 TEST REQUIREMENTS SUBGROUPS (SEE TABLES 1 AND 2) Interim Electrical Parameters (Pre Burn-In) 1 Final Electrical Test Parameters 1 (Note 1), 2, 3, 4, 5, 6, 7 Group A Test Requirements 1, 2, 3, 4, 5, 6, 7 Groups C and D Endpoints 1 NOTE: 1. PDA applies to Subgroup 1 only. Spec Number 3-142 511016-883 HA-5135/883 Die Characteristics DIE DIMENSIONS: 72 x 103 x 19 mils ± 1 mils 1840 x 2620 x 483µm ± 25.4µm METALLIZATION: Type: Al, 1% Cu Thickness: 16kÅ ± 2kÅ GLASSIVATION: Type: Nitride (Si3N4) over Silox (SIO2, 5% Phos.) Silox Thickness: 12kÅ ± 2kÅ Nitride Thickness: 3.5kÅ ± 1.5kÅ WORST CASE CURRENT DENSITY: 6.0 x 104A/cm2 SUBSTRATE POTENTIAL (Powered Up): VTRANSISTOR COUNT: 71 PROCESS: Bipolar Dielectric Isolation Metallization Mask Layout HA-5135/883 BAL1 V+ OUT BAL1 BAL2 -IN +IN V- All Intersil semiconductor products are manufactured, assembled and tested under ISO9000 quality systems certification. Intersil products are sold by description only. Intersil Corporation reserves the right to make changes in circuit design and/or specifications at any time without notice. Accordingly, the reader is cautioned to verify that data sheets are current before placing orders. Information furnished by Intersil is believed to be accurate and reliable. However, no responsibility is assumed by Intersil or its subsidiaries for its use; nor for any infringements of patents or other rights of third parties which may result from its use. No license is granted by implication or otherwise under any patent or patent rights of Intersil or its subsidiaries. For information regarding Intersil Corporation and its products, see web site http://www.intersil.com Spec Number 3-143 511016-883