ETC HA7-5135/883

HA-5135/883
Precision Operational Amplifier
July 1994
Features
Description
• This Circuit is Processed in Accordance to MIL-STD883 and is Fully Conformant Under the Provisions of
Paragraph 1.2.1.
The HA-5135/883 is a precision operational amplifier manufactured using a combination of key technological advancements to provide outstanding input characteristics.
• Low Offset Drift . . . . . . . . . . . . . . . . . . . 0.4µV/oC (Max)
A high Beta input stage is combined with laser trimming,
dielectric isolation, and matching techniques to produce
75µV (max) input offset voltage and 0.4µV/oC (max) input
offset voltage average drift. Other features enhanced by this
process include 9nV/√Hz (typ) Input Noise Voltage, 4nA
Input Bias Current (max) and 120dB Open Loop Gain (min).
• Low Offset Voltage. . . . . . . . . . . . . . . . . . . . .75µV (Max)
• High Gain . . . . . . . . . . . . . . . . . . . . 120dB(1MV/V) (Min)
• High CMRR . . . . . . . . . . . . . . . . . . . . . . . . . . 106dB (Min)
• High PSRR . . . . . . . . . . . . . . . . . . . . . . . . . . . 94dB (Min)
These features coupled with 106dB CMRR and 94dB PSRR
make HA-5135/883 an ideal device for precision D.C. instrumentation amplifiers. Excellent input characteristics in conjunction with 0.6MHz (min) bandwidth and 0.5V/µs (min)
slew rate, makes this amplifier extremely useful for precision
integrator and biomedical amplifier designs. These amplifiers are also well suited for precision data acquisition and for
accurate threshold detector applications.
• Low Supply Current. . . . . . . . . . . . . . . . . . 1.7mA (Max)
• Low Noise Voltage Density at 1kHz . . . . . 9nV/√Hz (Max)
• Low Noise Current Density at 1kHz . . . . 0.4pA/√Hz (Max)
Applications
• High Gain Instrumentation
Ordering Information
• Precision Data Acquisition
• Precision Integrators
PART
NUMBER
• Biomedical Amplifiers
• Precision Threshold Detectors
TEMPERATURE
RANGE
PACKAGE
HA2-5135/883
-55oC to +125oC
8 Pin Can
HA7-5135/883
-55oC to +125oC
8 Lead CerDIP
HA4-5135/883
-55oC to +125oC
20 Lead Ceramic LCC
Pinouts
BAL 2
1
8
BAL1
NC
BAL1
HA-5135/883
(METAL CAN)
TOP VIEW
BAL2
HA-5135/883
(CLCC)
TOP VIEW
NC
HA-5135/883
(CERDIP)
TOP VIEW
-IN
2
7
V+
3
2
1
20 19
+IN
3
V-
4
+
6
OUT
5
BAL1
NC
BAL1
8
BAL 2
18
NC
17
V+
16
NC
NC
4
-IN
5
NC
6
+IN
7
15
OUT
8
14
NC
-
CAUTION: These devices are sensitive to electrostatic discharge; follow proper IC Handling Procedures.
http://www.intersil.com or 407-727-9207 | Copyright © Intersil Corporation 1999
3-139
+
2
+IN
V+
6 OUT
5
3
BAL1
4
V- (CASE)
NC
BAL1
10 11 12 13
NC
9
V-
NC
NC
+
-IN
7
1
511016-883
File Number 3731.1
Spec Number
Specifications HA-5135/883
Absolute Maximum Ratings
Thermal Information
Voltage Between V+ and V- Terminals . . . . . . . . . . . . . . . . . . . . 40V
Differential Input Voltage (Note 2) . . . . . . . . . . . . . . . . . . . . . . . . 7V
Voltage at Either Input Terminal . . . . . . . . . . . . . . . . . . . . . . V+ to VInput Current . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 25mA
Output Current . . . . . . . . . . . . . . . . . . . .Full Short Circuit Protection
Junction Temperature (TJ) . . . . . . . . . . . . . . . . . . . . . . . . . . +175oC
Storage Temperature Range . . . . . . . . . . . . . . . . . -65oC to +150oC
ESD Rating. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . <2000V
Lead Temperature (Soldering 10s) . . . . . . . . . . . . . . . . . . . . +300oC
Thermal Resistance
θJA
θJC
CerDIP Package . . . . . . . . . . . . . . . . . . . 115oC/W
28oC/W
Ceramic LCC Package . . . . . . . . . . . . . .
65oC/W
15oC/W
Metal Can Package . . . . . . . . . . . . . . . . . 155oC/W 67oC/W
Package Power Dissipation Limit at +75oC for TJ ≤ +175oC
CerDIP Package . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 870mW
Ceramic LCC Package . . . . . . . . . . . . . . . . . . . . . . . . . . . . 1.54W
Metal Can Package . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 645mW
Package Power Dissipation Derating Factor Above +75oC
CerDIP Package . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 8.7mW/oC
Ceramic LCC Package . . . . . . . . . . . . . . . . . . . . . . . . 15.4mW/oC
Metal Can Package . . . . . . . . . . . . . . . . . . . . . . . . . . . . 6.5mW/oC
CAUTION: Stresses above those listed in “Absolute Maximum Ratings” may cause permanent damage to the device. This is a stress only rating and operation
of the device at these or any other conditions above those indicated in the operational sections of this specification is not implied.
Operating Conditions
Operating Temperature Range . . . . . . . . . . . . . . . . -55oC to +125oC
Operating Supply Voltage . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . ±15V
VINCM ≤ 1/2 (V+ - V-)
RL ≥ 600Ω
TABLE 1. DC ELECTRICAL PERFORMANCE CHARACTERISTICS
Device Tested at: VSUPPLY = ±15V, RSOURCE = 50Ω, RLOAD = 100kΩ, VOUT = 0V, Unless Otherwise Specified.
PARAMETERS
Input Offset Voltage
Input Bias Current
SYMBOL
VIO
IB
CONDITIONS
VCM = 0V
VCM = 0V,
RS = 10kΩ, 50Ω
LIMITS
GROUP A
SUBGROUPS
TEMPERATURE
1
+25oC
-75
75
µV
2, 3
+125oC, -55oC
-130
130
µV
1
+25oC
-4
4
nA
-6
6
nA
-4
4
nA
-5.5
5.5
nA
12
-
V
12
-
V
-
-12
V
-
-12
V
120
-
kV/V
2, 3
+125oC,
-55oC
MIN
MAX
UNITS
 +I B + – I B 
-
 ---------------------------2
Input Offset Current
Common Mode
Range
IIO
+CMR
-CMR
Large Signal Voltage
Gain
+AVOL
-AVOL
Common Mode
Rejection Ratio
+CMRR
-CMRR
Output Voltage
Swing
+VOUT
VCM = 0V,
+RS = 10kΩ,
-RS = 10kΩ
V+ = +3V,
V- = -27V
V+ = +27V,
V- = -3V
VOUT = 0V and +10V,
RL = 2kΩ
VOUT = 0V and -10V,
RL = 2kΩ
∆VCM = +10V,
V+ = +5V, V- = -25V,
VOUT = -10V
∆VCM = -10V,
V+ = +25V, V- = -5V,
VOUT = +10V
RL = 600Ω
1
2, 3
1
2, 3
1
2, 3
4
5, 6
RL = 600Ω
-55oC
+25oC
+125oC,
-55oC
+25oC
+125oC,
-55oC
+25oC
+125oC,
-55oC
120
-
kV/V
+25oC
120
-
kV/V
5, 6
+125oC, -55oC
120
-
kV/V
1
+25oC
106
-
dB
106
-
dB
2, 3
+125oC,
-55oC
1
+25oC
106
-
dB
2, 3
+125oC, -55oC
106
-
dB
4
+25oC
10
-
V
10
-
V
-
-10
V
4
5, 6
Output Current
+125oC,
4
5, 6
-VOUT
+25oC
+125oC,
-55oC
+25oC
+125oC,
-55oC
-
-10
V
+IOUT
VOUT = -10V
4
+25oC
15
-
mA
-IOUT
VOUT = +10V
4
+25oC
-
-15
mA
Spec Number
3-140
511016-883
Specifications HA-5135/883
TABLE 1. DC ELECTRICAL PERFORMANCE CHARACTERISTICS (Continued)
Device Tested at: VSUPPLY = ±15V, RSOURCE = 50Ω, RLOAD = 100kΩ, VOUT = 0V, Unless Otherwise Specified.
PARAMETERS
SYMBOL
Quiescent Power
Supply Current
CONDITIONS
+ICC
TEMPERATURE
1
+25oC
-
1.7
mA
2, 3
+125oC, -55oC
-
1.7
mA
1
+25oC
-1.7
-
mA
-1.7
-
mA
VOUT = 0V, IOUT = 0mA
-ICC
VOUT = 0V, IOUT = 0mA
+125oC,
2, 3
Power Supply
Rejection Ratio
∆VSUP = 10V,
V+ = +5V, V- = -15V,
V+ = +15V, V- = -15V
+PSRR
∆VSUP = 10V,
V+ = +15V, V- = -5V,
V+ = +15V, V- = -15V
-PSRR
Offset Voltage
Adjustment
+VIOAdj
Note 1
MAX
UNITS
1
94
-
dB
2, 3
+125oC, -55oC
94
-
dB
1
+25oC
94
-
dB
94
-
dB
VIO-1
-
mV
+125oC,
2, 3
-55oC
+25oC
1
Note 1
-55oC
MIN
+25oC
+125oC,
2, 3
-VIOAdj
LIMITS
GROUP A
SUBGROUPS
-55oC
VIO-1
-
mV
1
+25oC
VIO+1
-
mV
2, 3
+125oC, -55oC
VIO+1
-
mV
NOTES:
1. Offset adjustment range is [VIO (Measured ±1mV] minimum referred to output. This test is for functionality only to assure adjustment
through 0V.
2. The input stage has series 500Ω resistors along with back to back diodes. This provides large differential input voltage protection for a
slight increase in noise voltage.
TABLE 2. AC ELECTRICAL PERFORMANCE CHARACTERISTICS
Device Tested at: VSUPPLY = ±15V, RSOURCE = 50Ω, RLOAD = 2kΩ, CLOAD = 50pF, AVCL = +1V/V, Unless Otherwise Specified.
PARAMETERS
SYMBOL
Slew Rate
CONDITIONS
LIMITS
GROUP A
SUBGROUPS
TEMPERATURE
MIN
MAX
UNITS
0.5
-
V/µs
0.5
-
V/µs
+SR
VOUT = -3V to +3V,
VIN S.R. ≤ 25V/µs
7
+25oC
-SR
VOUT = +3V to -3V,
VIN S.R. ≤ 25V/µs
7
+25oC
TABLE 3. ELECTRICAL PERFORMANCE CHARACTERISTICS
Device Characterized at: VSUPPLY = ±15V, RLOAD = 2kΩ, CLOAD = 50pF, AV = +1V/V, Unless Otherwise Specified.
LIMITS
PARAMETERS
Average Offset Voltage
Drift
Differential Input
Resistance
SYMBOL
CONDITIONS
NOTES
TEMPERATURE
-55oC
to
+125oC
MIN
MAX
UNITS
-
1.3
µV/oC
VIOTC
VCM = 0V
1
RIN
VCM = 0V
1
+25oC
20
-
MΩ
Average Offset Current
Drift
IIOTC
Versus Temperature
VCM = 0V
1
-55oC to +125oC
-
40
pA/oC
Average Bias Current Drift
IBTC
Versus Temperature
VCM = 0V
1
-55oC to +125oC
-
40
pA/oC
EN
RS = 20Ω, fO = 1kHz
1
+25oC
-
11
nV/√Hz
Input Noise Voltage
Density
Spec Number
3-141
511016-883
Specifications HA-5135/883
TABLE 3. ELECTRICAL PERFORMANCE CHARACTERISTICS (Continued)
Device Characterized at: VSUPPLY = ±15V, RLOAD = 2kΩ, CLOAD = 50pF, AV = +1V/V, Unless Otherwise Specified.
LIMITS
PARAMETERS
SYMBOL
Input Noise Current
Density
IN
CONDITIONS
NOTES
TEMPERATURE
MIN
MAX
UNITS
RS = 2MΩ, fO = 1kHz
1
+25oC
-
0.4
pA/√Hz
1
+25oC
600
-
kHz
1, 2
+25oC
8
-
kHz
+1
-
V/V
-
80
Ω
-
51
mW
Unity Gain Bandwidth
UGBW
VOUT = ±100mV,
fO at -3dB
Full Power Bandwidth
FPBW
VPEAK = 10V
Minimum Closed Loop
Stable Gain
CLSG
RL = 2kΩ, CL = 50pF
1
Output Resistance
ROUT
Open Loop
1
Power Consumption
PC
VOUT = 0V, IOUT = 0mA
1, 3
-55oC
to
+125oC
+25oC
-55oC
to
+125oC
NOTES:
1. Parameters listed in Table 3 are controlled via design or process parameters and are not directly tested at final production. These parameters are lab characterized upon initial design release, or upon design changes. These parameters are guaranteed by characterization
based upon data from multiple production runs which reflect lot to lot and within lot variation.
2. Full Power Bandwidth guarantee based on Slew Rate measurement using FPBW = Slew Rate/(2πVPEAK).
3. Power Consumption based upon Quiescent Supply Current test maximum. (No load on outputs.)
TABLE 4. ELECTRICAL TEST REQUIREMENTS
MIL-STD-883 TEST REQUIREMENTS
SUBGROUPS (SEE TABLES 1 AND 2)
Interim Electrical Parameters (Pre Burn-In)
1
Final Electrical Test Parameters
1 (Note 1), 2, 3, 4, 5, 6, 7
Group A Test Requirements
1, 2, 3, 4, 5, 6, 7
Groups C and D Endpoints
1
NOTE:
1. PDA applies to Subgroup 1 only.
Spec Number
3-142
511016-883
HA-5135/883
Die Characteristics
DIE DIMENSIONS:
72 x 103 x 19 mils ± 1 mils
1840 x 2620 x 483µm ± 25.4µm
METALLIZATION:
Type: Al, 1% Cu
Thickness: 16kÅ ± 2kÅ
GLASSIVATION:
Type: Nitride (Si3N4) over Silox (SIO2, 5% Phos.)
Silox Thickness: 12kÅ ± 2kÅ
Nitride Thickness: 3.5kÅ ± 1.5kÅ
WORST CASE CURRENT DENSITY:
6.0 x 104A/cm2
SUBSTRATE POTENTIAL (Powered Up): VTRANSISTOR COUNT: 71
PROCESS: Bipolar Dielectric Isolation
Metallization Mask Layout
HA-5135/883
BAL1
V+
OUT
BAL1
BAL2
-IN
+IN
V-
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Intersil products are sold by description only. Intersil Corporation reserves the right to make changes in circuit design and/or specifications at any time without
notice. Accordingly, the reader is cautioned to verify that data sheets are current before placing orders. Information furnished by Intersil is believed to be accurate
and reliable. However, no responsibility is assumed by Intersil or its subsidiaries for its use; nor for any infringements of patents or other rights of third parties which
may result from its use. No license is granted by implication or otherwise under any patent or patent rights of Intersil or its subsidiaries.
For information regarding Intersil Corporation and its products, see web site http://www.intersil.com
Spec Number
3-143
511016-883