INTERSIL HA

HA-2548/883
Precision, High Slew Rate,
Wideband Operational Amplifier
July 1997
Features
Description
• This Circuit is Processed in Accordance to MIL-STD883 and is Fully Conformant Under the Provisions of
Paragraph 1.2.1.
The HA-2548/883 is a monolithic op amp that offers a unique
combination of bandwidth, slew rate, and precision specifications. These features can eliminate the need for composite
op amp designs and external calibration circuitry.
• High Slew Rate . . . . . . . . . . . . . . . . . . . . . 120V/µs (Typ)
• Minimum Gain Stability . . . . . . . . . . . . . . . . . . . ≥ 5 (Typ)
Optimized for gains ≥5, the HA-2548/883 has a gain bandwidth product of 150MHz (typ) and a slew rate of 120V/µs
(typ) while maintaining an extremely high open loop gain of
130dB (typ) and a low offset voltage of 300µV (typ). These
specifications are achieved through uniquely designed input
circuitry and a single ultra-high gain stage that minimizes the
AC signal path. Capable of delivering over 30mA (min) of
output current, the HA-2548/883 is ideal for precision, high
speed applications such as signal conditioning, instrumentation, video/pulse amplifiers and buffers.
Applications
Ordering Information
• Low Offset Voltage. . . . . . . . . . . . . . . . . . . . 300µV (Typ)
900µV (Max)
• High Open Loop Gain . . . . . . . . . . . . . . . . . 130dB (Typ)
114dB (Min)
• Gain Bandwidth Product . . . . . . . . . . . . . 150MHz (Typ)
• Low Voltage Noise at 1kHz . . . . . . . . . . 8.3nV/√Hz (Typ)
• High Speed Instrumentation
PART NUMBER
• Data Acquisition Systems
HA2-2548/883
• Analog Signal Conditioning
TEMP.
RANGE (oC)
-55 to 125
PACKAGE
8 Pin Can
PKG.
NO.
T8.C
• Precision, Wideband Amplifiers
• Pulse/RF Amplifiers
Pinout
HA-2548/883
(METAL CAN)
TOP VIEW
COMP
8
7 V+
+BAL 1
-IN
2
+
6 OUT
5 -BAL
+IN 3
4
V-
CAUTION: These devices are sensitive to electrostatic discharge; follow proper IC Handling Procedures.
1-888-INTERSIL or 321-724-7143 | Copyright © Intersil Corporation 1999
1
511069-883
File Number 2472.2
Spec Number
HA-2548/883
Absolute Maximum Ratings
Thermal Information
Voltage Between V+ and V- Terminals . . . . . . . . . . . . . . . . . . . . 40V
Differential Input Voltage. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 5V
Voltage at Either Input Terminal . . . . . . . . . . . . . . . . . . . . . . V+ to VPeak Output Current (< 10% Duty Cycle). . . . . . . . . . . . . . . . . 60mA
Continuous Output Current. . . . . . . . . . . . . . . . . . . . . . . . . . . . 40mA
ESD Rating. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . <2000V
Thermal Resistance (Typical, Note 1)
θJA
θJC
Metal Can Package . . . . . . . . . . . . . . . 142oC/W
66oC/W
Package Power Dissipation Limit at 75oC
Metal Can Package . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 0.70W
Package Power Dissipation Derating Factor Above 75oC
Metal Can Package . . . . . . . . . . . . . . . . . . . . . . . . . . . . 7.0mW/oC
Maximum Junction Temperature . . . . . . . . . . . . . . . . . . . . . . . 175oC
Maximum Storage Temperature Range . . . . . . . . . .-65oC to 150oC
Maximum Lead Temperature (Soldering 10s) . . . . . . . . . . . . . 300oC
Operating Conditions
Temperature Range . . . . . . . . . . . . . . . . . . . . . . . . . -55oC to 125oC
Supply Voltage . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . ±15V
VINCM ≤ 1/2 (V+ - V-)
RL ≥ 1kΩ
CAUTION: Stresses above those listed in “Absolute Maximum Ratings” may cause permanent damage to the device. This is a stress only rating and operation
of the device at these or any other conditions above those indicated in the operational sections of this specification is not implied.
NOTE:
1. θJA is measured with the component mounted on an evaluation PC board in free air.
TABLE 1. DC ELECTRICAL PERFORMANCE CHARACTERISTICS
Device Tested at: VSUPPLY = ±15V, RLOAD = 100kΩ, VOUT = 0V, Unless Otherwise Specified.
PARAMETERS
Input Offset Voltage
Input Bias Current
SYMBOL
VIO
+IB
-IB
Input Offset Current
Common Mode Range
IIO
+CMR
-CMR
Large Signal Voltage
Gain
+AVOL
-AVOL
Common Mode
Rejection Ratio
+CMRR
-CMRR
CONDITIONS
GROUP A
SUBGROUPS
TEMP. (oC)
MIN
MAX
UNITS
1
25
-900
900
µV
2, 3
125, -55
-1200
1200
µV
1
25
-50
50
nA
2, 3
125, -55
-100
100
nA
1
25
-50
50
nA
2, 3
125, -55
-100
100
nA
1
25
-50
50
nA
2, 3
125, -55
-100
100
nA
1
25
7
-
V
2, 3
125, -55
7
-
V
1
25
-
-7
V
2, 3
125, -55
-
-7
V
4
25
114
-
dB
5, 6
125, -55
108
-
dB
4
25
114
-
dB
5, 6
125, -55
108
-
dB
1
25
80
-
dB
2, 3
125, -55
80
-
dB
1
25
80
-
dB
2, 3
125, -55
80
-
dB
VCM = 0V
VCM = 0V,
+RS = 100.1kΩ,
-RS = 100Ω
VCM = 0V,
+RS = 100Ω,
-RS = 100.1kΩ
VCM = 0V,
+RS = 100.1kΩ,
-RS = 100.1kΩ
V+ = +8V, V- = -22V
V+ = +22V, V- = -8V
VOUT = 0V and +10V,
RL = 1kΩ
VOUT = 0V and -10V,
RL = 1kΩ
∆VCM = +2V,
V+ = +13V, V- = -17V,
VOUT = -2V
∆VCM = -2V,
V+ = +17V, V- = -13V,
VOUT = 2V
Spec Number
2
511069-883
HA-2548/883
TABLE 1. DC ELECTRICAL PERFORMANCE CHARACTERISTICS (Continued)
Device Tested at: VSUPPLY = ±15V, RLOAD = 100kΩ, VOUT = 0V, Unless Otherwise Specified.
PARAMETERS
SYMBOL
Output Voltage Swing
+VOUT
-VOUT
Output Current
+IOUT
-IOUT
Quiescent Power Supply
Current
GROUP A
SUBGROUPS
TEMP. (oC)
MIN
MAX
UNITS
4
25
11
-
V
5, 6
125, -55
11
-
V
4
25
-
-11
V
5, 6
125, -55
-
-11
V
4
25
30
-
mA
5, 6
125, -55
30
-
mA
4
25
-
-30
mA
5, 6
125, -55
-
-30
mA
1
25
-
18
mA
2, 3
125, -55
-
18
mA
1
25
-18
-
mA
2, 3
125, -55
-18
-
mA
1
25
86
-
dB
2, 3
125, -55
86
-
dB
1
25
86
-
dB
2, 3
125, -55
86
-
dB
RL = 1kΩ
RL = 1kΩ
VOUT = +10V
VOUT = -10V
+ICC
VOUT = 0V,
IOUT = 0mA
-ICC
Power Supply
Rejection Ratio
CONDITIONS
VOUT = 0V,
IOUT = 0mA
+PSRR
-PSRR
∆VSUP = 10V,
V+ = +10V, V- = -15V,
V+ = +20V, V- = -15V
∆VSUP = 10V,
V+ = +15V, V- = -10V,
V+ = +15V, V- = -20V
TABLE 2. AC ELECTRICAL PERFORMANCE CHARACTERISTICS
Table 2 Intentionally Left Blank. See AC Characteristics in Table 3.
TABLE 3. ELECTRICAL PERFORMANCE CHARACTERISTICS
Device Characterized at: VSUPPLY = ±15V, RLOAD = 1kΩ, CLOAD ≤ 10pF, Unless Otherwise Specified.
PARAMETERS
SYMBOL
Average Offset Voltage Drift
VIOTC
Offset Voltage Adjust
VIOAdj
CONDITIONS
VCM = 0V
NOTES
TEMP. (oC)
MIN
MAX
UNITS
2
-55 to 125
-
7
µV/oC
2, 6
25
1
-
mV
Input Noise Voltage Density
EN
RS = 10Ω, fO = 1kHz
2
25
-
13.0
nV/√Hz
Input Noise Current Density
IN
RS = 500Ω, fO = 1kHz
2
25
-
1.0
pA/√Hz
GBWP
VO = 1.0V, fO = 1MHz
2
25
-
130
MHz
2
-55 to 125
-
110
MHz
2
25
80
-
V/µs
2
-55 to 125
70
-
V/µs
2
25
80
-
V/µs
2
-55 to 125
70
-
V/µs
2, 3
25
1.11
-
MHz
Gain Bandwidth Product
Slew Rate
+SR
-SR
Full Power Bandwidth
FPBW
VOUT = -5V to +5V
VOUT = +5V to -5V
VPEAK = 10V
Spec Number
3
511069-883
HA-2548/883
TABLE 3. ELECTRICAL PERFORMANCE CHARACTERISTICS (Continued)
Device Characterized at: VSUPPLY = ±15V, RLOAD = 1kΩ, CLOAD ≤ 10pF, Unless Otherwise Specified.
PARAMETERS
Minimum Closed Loop
Stable Gain
Rise and Fall Time
SYMBOL
CONDITIONS
NOTES
TEMP. (oC)
MIN
MAX
UNITS
CLSG
RL = 1kΩ, CL = 10pF
2
-55 to 125
5
-
V/V
VOUT = -100mV
to +100mV
2, 5
25
-
15
ns
2, 5
-55 to 125
-
20
ns
VOUT = +100mV
to -100mV
2, 5
25
-
15
ns
2, 5
-55 to 125
-
20
ns
VOUT = -100mV
to +100mV
2
25
-
30
%
2
-55 to 125
-
35
%
VOUT = +100mV
to -100mV
2
25
-
30
%
2
-55 to 125
-
35
%
2
25
-
260
ns
2, 4
-55 to 125
-
540
mW
tr
tf
Overshoot
+OS
-OS
Settling Time
tS
To 0.01% for a 10V
Step
Power Consumption
PC
VOUT = 0V,
IOUT = 0mA
NOTES:
2. Parameters listed in Table 3 are controlled via design or process parameters and are not directly tested at final production. These parameters are lab characterized upon initial design release, or upon design changes. These parameters are guaranteed by characterization
based upon data from multiple production runs which reflect lot to lot and within lot variation.
3. Full Power Bandwidth guarantee based on Slew Rate measurement using FPBW = Slew Rate/(2πVPEAK).
4. Power Consumption based upon Quiescent Supply Current test maximum. (No load on outputs.)
5. Measured between 10% and 90% points.
6. Offset adjustment range is [VIO (Measured) ±1mV] minimum referred to output. This test is for functionality only to assure adjustment
through 0V.
TABLE 4. ELECTRICAL TEST REQUIREMENTS
MIL-STD-883 TEST REQUIREMENTS
SUBGROUPS (SEE TABLE 1)
Interim Electrical Parameters (Pre Burn-In)
1
Final Electrical Test Parameters
1 (Note 7), 2, 3, 4, 5, 6
Group A Test Requirements
1, 2, 3, 4, 5, 6
Groups C and D Endpoints
1
NOTE:
7. PDA applies to Subgroup 1 only.
Spec Number
4
511069-883
HA-2548/883
Die Characteristics
DIE DIMENSIONS:
WORST CASE CURRENT DENSITY:
3.6 x 104 A/cm2
85 mils x 91 mils x 19 mils
2160µm x 2320µm x 483µm
SUBSTRATE POTENTIAL (Powered Up): V- (Note)
METALLIZATION:
TRANSISTOR COUNT: 60
Type: Al, 1% Cu
Thickness: 16kÅ ± 2kÅ
PROCESS: Bipolar, Dielectric Isolation
GLASSIVATION:
Type: Nitride (Si3N4) over Silox (SiO2, 5% Phos.)
Silox Thickness: 12kÅ ± 2kÅ
Nitride Thickness: 3.5kÅ ± 1.5kÅ
NOTE: The Substrate may be left floating (Insulating Die Mount) or it may be mounted on a conductor at a V- potential.
Metallization Mask Layout
HA-2548/883
+BAL
COMP
V+
-IN
OUT
+IN
V-
-BAL
Spec Number
5
511069-883
HA-2548/883
Burn-In Circuit
HA2-2548/883 METAL CAN
R3
8
1
V+
7
C1
+
2
D1
6
5
3
4
R1
R2
VC2
D2
NOTES:
R1 = 1kΩ, ±5%, 1/4W (Min)
R2 = 1kΩ, ±5%, 1/4W (Min)
R3 = 10kΩ, ±5%, 1/4W (Min)
C1 = 0.01µF/Socket or 0.1µF/Row
C2 = 0.01µF/Socket or 0.1µF/Row
D1 = D2 = 1N4002 or Equivalent/Board
|(V+) - (V-)| = 31V ±1V
Spec Number
6
511069-883
HA-2548/883
Metal Can Packages (Can)
T8.C MIL-STD-1835 MACY1-X8 (A1)
REFERENCE PLANE
A
8 LEAD METAL CAN PACKAGE
e1
L
L2
L1
INCHES
ØD2
A
A
k1
Øe
ØD ØD1
2
N
1
F
α
β
Øb1
Øb
k
C
L
BASE AND
SEATING PLANE
Q
BASE METAL
Øb1
LEAD FINISH
Øb2
SECTION A-A
NOTES:
1. (All leads) Øb applies between L1 and L2. Øb1 applies between
L2 and 0.500 from the reference plane. Diameter is uncontrolled
in L1 and beyond 0.500 from the reference plane.
MILLIMETERS
SYMBOL
MIN
MAX
MIN
MAX
NOTES
A
0.165
0.185
4.19
4.70
-
Øb
0.016
0.019
0.41
0.48
1
Øb1
0.016
0.021
0.41
0.53
1
Øb2
0.016
0.024
0.41
0.61
-
ØD
0.335
0.375
8.51
9.40
-
ØD1
0.305
0.335
7.75
8.51
-
ØD2
0.110
0.160
2.79
4.06
-
e
0.200 BSC
5.08 BSC
-
e1
0.100 BSC
2.54 BSC
-
F
-
0.040
-
1.02
-
k
0.027
0.034
0.69
0.86
-
k1
0.027
0.045
0.69
1.14
2
L
0.500
0.750
12.70
19.05
1
L1
-
0.050
-
1.27
1
L2
0.250
-
6.35
-
1
Q
0.010
0.045
0.25
1.14
-
α
45o BSC
45o BSC
β
45o BSC
45o BSC
3
N
8
8
4
2. Measured from maximum diameter of the product.
3
Rev. 0 5/18/94
3. α is the basic spacing from the centerline of the tab to terminal 1
and β is the basic spacing of each lead or lead position (N -1
places) from α, looking at the bottom of the package.
4. N is the maximum number of terminal positions.
5. Dimensioning and tolerancing per ANSI Y14.5M - 1982.
6. Controlling dimension: INCH.
All Intersil semiconductor products are manufactured, assembled and tested under ISO9000 quality systems certification.
Intersil products are sold by description only. Intersil Corporation reserves the right to make changes in circuit design and/or specifications at any time without
notice. Accordingly, the reader is cautioned to verify that data sheets are current before placing orders. Information furnished by Intersil is believed to be accurate
and reliable. However, no responsibility is assumed by Intersil or its subsidiaries for its use; nor for any infringements of patents or other rights of third parties which
may result from its use. No license is granted by implication or otherwise under any patent or patent rights of Intersil or its subsidiaries.
For information regarding Intersil Corporation and its products, see web site http://www.intersil.com
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FAX: (886) 2 2715 3029
Spec Number
7
511069-883