RSM002P03 Transistors 4V Drive Pch MOSFET RSM002P03 zStructure Silicon P-channel MOSFET zDimensions (Unit : mm) 1.2 0.32 zFeatures 1) Low On-resistance. 2) Small package (VMT3). 3) 4V drive. 0.2 VMT3 0.8 1.2 (3) (1)(2) 0.4 0.4 0.2 0.22 0.13 0.5 0.8 (1)Gate (2)Source zApplications Switching zPackaging specifications zInner circuit Package Type Abbreviated symbol : WP (3)Drain Taping Code T2L Basic ordering unit (pieces) 8000 (3) RSM002P03 ∗2 (1) ∗1 (2) ∗1 ESD PROTECTION DIODE ∗2 BODY DIODE (1) Gate (2) Source (3) Drain zAbsolute maximum ratings (Ta=25°C) Parameter Drain-source voltage Gate-source voltage Continuous Pulsed Drain current Total power dissipation Channel temperature Range of storage temperature Symbol VDSS VGSS ID IDP ∗1 PD ∗2 Tch Tstg Limits −30 ±20 ±0.2 ±0.4 0.15 150 −55 to +150 Unit V V A A W °C °C Symbol Limits Unit 833 °C/W ∗1 Pw≤10µs, Duty cycle≤1% ∗2 Each terminal mounted on a recommended land zThermal resistance Parameter Channel to ambient Rth(ch-a) ∗ ∗ Each terminal mounted on a recommended land Rev.A 1/4 RSM002P03 Transistors zElectrical characteristics (Ta=25°C) Parameter Symbol Min. IGSS − Gate-source leakage Drain-source breakdown voltage V(BR) DSS −30 Zero gate voltage drain current − IDSS Gate threshold voltage VGS (th) −1.0 − Static drain-source on-state − RDS (on)∗ resistance − Yfs ∗ 0.2 Forward transfer admittance − Ciss Input capacitance − Output capacitance Coss Reverse transfer capacitance − Crss Turn-on delay time − td (on) ∗ Rise time − tr ∗ Turn-off delay time − td (off) ∗ Fall time − tf ∗ Typ. Max. − − − − 0.9 1.4 1.6 − 30 4 5 8 5 30 40 ±10 − −1 −2.5 1.4 2.1 2.4 − − − − − − − − Conditions Unit µA V µA V Ω Ω Ω S pF pF pF ns ns ns ns VGS= ±20V, VDS=0V ID= −1mA, VGS=0V VDS= −30V, VGS=0V VDS= −10V, ID= −1mA ID= −0.2A, VGS= −10V ID= −0.15A, VGS= −4.5V ID= −0.15A, VGS= −4.0V VDS= −10V, ID= −0.15A VDS= −10V VGS= 0V f=1MHz VDD −15V ID= −0.15A VGS= −10V RL= 100Ω RG= 10Ω Unit V IS= −0.1A, VGS=0V ∗Pulsed zBody diode characteristics (Source-drain) (Ta=25°C) Parameter Forward voltage Symbol Min. Typ. Max. VSD − − −1.2 Conditions Rev.A 2/4 RSM002P03 Transistors zElectrical characteristics curves 1000 Ciss 10 Crss Coss 8 Ta=25°C VDD= −15V VGS= −10V RG=10Ω Pulsed tf 100 td(off) td(on) 10 tr 1 10 100 0.1 DRAIN-SOURCE VOLTAGE : −VDS (V) Fig.1 Typical Capacitance vs. Drain-Source Voltage Ta=125°C 0.1 75°C 25°C −25°C 0.01 0.001 1.4 1.6 1.8 2.0 2.2 2.4 2.6 2.8 3.0 3.2 3.4 75°C 25°C −25°C 1 Fig.7 Static Drain-Source On-State Resistance vs. Drain Current ( Ι ) 0 1 0.4 0.6 0.8 1 Fig.2 Switching Characteristics Fig.3 Dynamic Input Characteristics 1 ID= −125mA 10 5 1 2 3 4 5 6 7 8 9 10 VGS=0V Pulsed Ta=125°C 75°C 25°C −25°C 0.1 0.01 0.0 10 25°C −25°C 1 DRAIN CURRENT : −ID (A) Fig.8 Static Drain-Source On-State Resistance vs. Drain Current ( ΙΙ ) 0.6 0.8 1.0 10 75°C 0.1 0.4 1.2 1.4 1.6 Fig.6 Reverse Drain Current vs. Source-Drain Voltage VGS= −4.5V Pulsed Ta=125°C 0.2 SOURCE-DRAIN VOLTAGE : −VSD (V) Fig.5 Static Drain-Source On-State Resistance vs. Gate-Source Voltage 0.1 0.01 0.2 TOTAL GATE CHARGE : Qg (nC) ID= −250mA 0 0 STATIC DRAIN-SOURCE ON-STATE RESISTANCE : RDS (on) (Ω) STATIC DRAIN-SOURCE ON-STATE RESISTANCE : RDS (on) (Ω) Ta=125°C DRAIN CURRENT : −ID (A) 1 GATE-SOURCE VOLTAGE : −VGS (V) VGS= −10V Pulsed 0.1 2 DRAIN CURRENT : −ID (A) 15 Fig.4 Typical Transfer Characteristics 0.1 0.01 3 1 Ta=25°C Pulsed GATE-SOURCE VOLTAGE : −VGS (V) 10 4 20 VDS= −10V Pulsed STATIC DRAIN-SOURCE ON-STATE RESISTANCE : RDS (Ω) DRAIN CURRENT : −ID (A) 1 5 0 1 0.01 REVERSE DRAIN CURRENT : −IDR (A) 0.1 7 STATIC DRAIN-SOURCE ON-STATE RESISTANCE : RDS (on) (Ω) 1 0.01 Ta=25°C VDD= −15V ID=−250mA RG=10Ω 6 Pulsed GATE-SOURCE VOLTAGE : −VGS (V) Ta=25°C f=1MHz VGS=0V SWITCHING TIME : t (ns) CAPACITANCE : C (pF) 100 1 VGS= −4V Pulsed Ta=125°C 75°C 25°C −25°C 1 0.1 0.01 0.1 1 DRAIN CURRENT : −ID (A) Fig.9 Static Drain-Source On-State Resistance vs. Drain Current ( ΙΙΙ ) Rev.A 3/4 RSM002P03 Transistors STATIC DRAIN-SOURCE ON-STATE RESISTANCE : RDS (on) (Ω) 10 Ta=25°C Pulsed VGS= −4V VGS= −4.5V VGS= −10V 1 0 0.01 0.1 1 DRAIN CURRENT : −ID (A) Fig.10 Static Drain-Source On-State Resistance vs. Drain Current ( Ι ) Rev.A 4/4 Appendix Notes No technical content pages of this document may be reproduced in any form or transmitted by any means without prior permission of ROHM CO.,LTD. The contents described herein are subject to change without notice. The specifications for the product described in this document are for reference only. Upon actual use, therefore, please request that specifications to be separately delivered. Application circuit diagrams and circuit constants contained herein are shown as examples of standard use and operation. Please pay careful attention to the peripheral conditions when designing circuits and deciding upon circuit constants in the set. Any data, including, but not limited to application circuit diagrams information, described herein are intended only as illustrations of such devices and not as the specifications for such devices. ROHM CO.,LTD. disclaims any warranty that any use of such devices shall be free from infringement of any third party's intellectual property rights or other proprietary rights, and further, assumes no liability of whatsoever nature in the event of any such infringement, or arising from or connected with or related to the use of such devices. Upon the sale of any such devices, other than for buyer's right to use such devices itself, resell or otherwise dispose of the same, no express or implied right or license to practice or commercially exploit any intellectual property rights or other proprietary rights owned or controlled by ROHM CO., LTD. is granted to any such buyer. Products listed in this document are no antiradiation design. The products listed in this document are designed to be used with ordinary electronic equipment or devices (such as audio visual equipment, office-automation equipment, communications devices, electrical appliances and electronic toys). Should you intend to use these products with equipment or devices which require an extremely high level of reliability and the malfunction of with would directly endanger human life (such as medical instruments, transportation equipment, aerospace machinery, nuclear-reactor controllers, fuel controllers and other safety devices), please be sure to consult with our sales representative in advance. About Export Control Order in Japan Products described herein are the objects of controlled goods in Annex 1 (Item 16) of Export Trade Control Order in Japan. In case of export from Japan, please confirm if it applies to "objective" criteria or an "informed" (by MITI clause) on the basis of "catch all controls for Non-Proliferation of Weapons of Mass Destruction. Appendix1-Rev1.1