ROHM RUM003N02_1

RUM003N02
Transistor
1.8V Drive Nch MOSFET
RUM003N02
zDimensions (Unit : mm)
zStructure
Silicon N-channel
MOSFET
VMT3
zApplications
Switching
(1)Base(IN)(Gate)
zFeatures
1) Low on-resistance.
2) Fast switching speed.
3) Low voltage drive (1.8V) makes this device ideal for
portable equipment.
4) Drive circuits can be simple.
5) Parallel use is easy.
(2)Emitter(GND)(Source)
(3)Collector(OUT)(Drain) Abbreviated symbol : QT
zPackaging specifications
Package
Type
zEquivalent circuit
Taping
Code
T2L
Basic ordering unit
(pieces)
8000
Drain
RUM003N02
Gate
zAbsolute maximum ratings (Ta=25°C)
Parameter
∗1
Symbol
Limits
Unit
Drain-source voltage
VDSS
20
V
Gate-source voltage
VGSS
±8
V
ID
±300
mA
IDP∗1
±600
mA
PD∗2
150
mW
Continuous
Drain current
Pulsed
Total power dissipation
∗2
Channel temperature
Tch
150
°C
Range of storage temperature
Tstg
−55 to +150
°C
Source
∗1 ESD PROTECTION DIODE
∗2 BODY DIODE
∗1 Pw≤10µs, Duty cycle≤1%
∗2 Each terminal mounted on a recommended land
zThermal resistance
Parameter
Channel to ambient
Symbol
Limits
Unit
Rth(ch-a) ∗
833
°C / W
∗ Each terminal mounted on a recommended land
Rev.B
1/3
RUM003N02
Transistor
zElectrical characteristics (Ta=25°C)
Parameter
Symbol
Min.
Typ.
Max.
Unit
IGSS
−
−
10
µA
VGS=±8V, VDS=0V
V(BR)DSS
20
−
−
V
ID=1mA, VGS=0V
Gate-source leakage
Drain-source breakdown voltage
Conditions
IDSS
−
−
1.0
µA
VDS=20V, VGS=0V
Gate threshold voltage
VGS(th)
0.3
−
1.0
V
VDS=10V, ID=1mA
Static drain-source on-state
resistance
−
0.7
1.0
RDS(on)∗
Ω
ID=300mA, VGS=4.0V
−
0.8
1.2
Ω
ID=300mA, VGS=2.5V
−
1.0
1.4
Ω
ID=300mA, VGS=1.8V
ID=300mA, VDS=10V
Zero gate voltage drain current
Forward transfer admittance
|Yfs| ∗
400
−
−
ms
Input capacitance
Ciss
−
25
−
pF
VDS=10V
Output capacitance
Coss
−
10
−
pF
VGS=0V
Reverse transfer capacitance
Crss
−
10
−
pF
f=1MHz
Turn-on delay time
td(on) ∗
−
5
−
ns
ID=150mA, VDD
tr ∗
−
10
−
ns
VGS=4.0V
td(off) ∗
tf ∗
−
15
−
ns
RL=67Ω
−
10
−
ns
RG=10Ω
Rise time
Turn-off delay time
Fall time
10V
∗ Pulsed
zBody diode characteristics (Source-drain) (Ta=25°C)
Parameter
Symbol
VSD ∗
Forward voltage
Min.
Typ.
Max.
−
−
1.2
Unit
V
Conditions
IS= 100mA, VGS=0V
∗ Pulsed
zElectrical characteristic curves
10
0.1
0.01
Ta=125°C
75°C
25°C
−25°C
0.001
0.0001
0.00001
0.0
0.5
1.0
1.5
GATE-SOURCE VOLTAGE : VGS (V)
Fig.1 Typical transfer characteristics
10
VGS=4V
Pulsed
STATIC DRAIN-SOURCE
ON-STATE RESISTANCE : RDS(on) (mΩ)
STATIC DRAIN-SOURCE
ON-STATE RESISTANCE : RDS(on) (mΩ)
DRAIN CURRENT : ID (A)
1 VDS=10V
Pulsed
Ta=125°C
75°C
25°C
−25°C
1
0.1
0.01
0.1
DRAIN CURRENT : ID (A)
Fig.2 Static drain-source on-state
resistance vs. drain current (Ι)
1
VGS=2.5V
Pulsed
Ta=125°C
75°C
25°C
−25°C
1
0.1
0.01
0.1
1
DRAIN CURRENT : ID (A)
Fig.3 Static drain-source on-state
resistance vs. drain current (ΙΙ)
Rev.B
2/3
RUM003N02
Transistor
1
0.1
0.01
0.1
1
Ta=125°C
75°C
25°C
−25°C
0.1
0.01
0.0
0.5
1
1.5
Ta=25°C
f=1MHZ
VGS=0V
Ciss
10
Crss
1
0.01
0.1
1
Coss
10
100
DRAIN-SOURCE VOLTAGE : VDS (V)
SOURCE-DRAIN VOLTAGE : VSD (V)
Fig.4 Static drain-source on-state
resistance vs. drain current (ΙΙΙ)
1000
100
VGS=0V
Pulsed
CAPACITANCE : C (pF)
Ta=125°C
75°C
25°C
−25°C
DRAIN CURRENT : ID (A)
SWITHING TIME : t (ns)
1
VGS=1.8V
Pulsed
SOURCE CURRENT : IS (A)
STATIC DRAIN-SOURCE
ON-STATE RESISTANCE : RDS(on) (mΩ)
10
Fig.6 Typical capacitance vs.
drain-source voltage
Fig.5 Source current vs.
source-drain voltage
Ta=25°C
VDD=10V
VGS=4V
RG=10Ω
Pulsed
100
td(off)
tf
td(on)
10
tr
1
0.01
1
0.1
DRAIN CURRENT : ID (A)
Fig.7 Switching characteristics
zSwitching characteristics measurement circuit
Pulse width
VGS
RG
ID
VDS
D.U.T.
VGS
90%
50%
10%
RL
50%
10%
VDS
10%
VDD
90%
90%
td (on)
ton
Fig.8 Switching time measurement circuit
tr
td (off)
tf
toff
Fig.9 Switching time waveforms
Rev.B
3/3
Appendix
Notes
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The contents described herein are subject to change without notice. The specifications for the
product described in this document are for reference only. Upon actual use, therefore, please request
that specifications to be separately delivered.
Application circuit diagrams and circuit constants contained herein are shown as examples of standard
use and operation. Please pay careful attention to the peripheral conditions when designing circuits
and deciding upon circuit constants in the set.
Any data, including, but not limited to application circuit diagrams information, described herein
are intended only as illustrations of such devices and not as the specifications for such devices. ROHM
CO.,LTD. disclaims any warranty that any use of such devices shall be free from infringement of any
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exploit any intellectual property rights or other proprietary rights owned or controlled by
ROHM CO., LTD. is granted to any such buyer.
Products listed in this document are no antiradiation design.
The products listed in this document are designed to be used with ordinary electronic equipment or devices
(such as audio visual equipment, office-automation equipment, communications devices, electrical
appliances and electronic toys).
Should you intend to use these products with equipment or devices which require an extremely high level
of reliability and the malfunction of which would directly endanger human life (such as medical
instruments, transportation equipment, aerospace machinery, nuclear-reactor controllers, fuel controllers
and other safety devices), please be sure to consult with our sales representative in advance.
It is our top priority to supply products with the utmost quality and reliability. However, there is always a chance
of failure due to unexpected factors. Therefore, please take into account the derating characteristics and allow
for sufficient safety features, such as extra margin, anti-flammability, and fail-safe measures when designing in
order to prevent possible accidents that may result in bodily harm or fire caused by component failure. ROHM
cannot be held responsible for any damages arising from the use of the products under conditions out of the
range of the specifications or due to non-compliance with the NOTES specified in this catalog.
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Appendix1-Rev2.0