US6J2 Transistors Small switching (−20V, −1A) US6J2 TUMT6 2.0±0.1 0.85MAX 0.77±0.05 (6) (5) (4) (1) (2) (3) 2.1±0.1 1.7±0.1 0.2 0.3 +0.1 −0.05 0.2MAX zExternal dimensions (Unit : mm) 0~0.1 0.2 zFeatures 1) Two Pch MOSFET transistors in a single TUMT6 package. 2) Mounting cost and area can be cut in half. 3) Low on-resistance. 4) Low voltage drive (2.5V) makes this device ideal for portable equipment. 5) Easily designed drive circuits. 1pin mark 0.65 0.65 1.3±0.1 0.17±0.05 Each lead has same dimensions Abbreviated symbol : J02 zApplications switch zEquivalent circuit zStructure Silicon P-channel MOS FET (6) (5) (4) ∗1 zPackaging specifications Package Type Code Basic ordering unit (pieces) US6J2 ∗2 ∗2 Taping ∗1 TR 3000 (1) (2) ∗1 ESD PROTECTION DIODE ∗2 BODY DIODE (3) (1) Tr1 Source (2) Tr1 Gate (3) Tr2 Drain (4) Tr2 Source (5) Tr2 Gate (6) Tr1 Drain 1/4 US6J2 Transistors zAbsolute maximum ratings (Ta=25°C) Parameter Drain-source voltage Gate-source voltage Drain current Source current (Body diode) Continuous Pulsed Continuous Pulsed Total power dissipation Channel temperature Range of Storage temperature Symbol VDSS VGSS ID IDP IS ISP PD Tch Tstg Limits −20 ±12 ±1 ±4 −0.4 −1.6 1.0 150 −55 to +150 Unit V V A A A A W °C °C ∗1 ∗1 ∗2 ∗1 Pw≤10µs, Duty cycle≤50% ∗2 Mounted on a ceramic board zElectrical characteristics (Ta=25°C) Parameter Symbol Min. − IGSS Gate-source leakage Drain-source breakdown voltage V(BR) DSS −20 Zero gate voltage drain current − IDSS Gate threshold voltage VGS (th) −0.7 − Static drain-source on-state − RDS (on) resistance − 0.7 Yfs Forward transfer admittance − Ciss Input capacitance − Output capacitance Coss Reverse transfer capacitance − Crss Turn-on delay time − td (on) Rise time − tr Turn-off delay time − td (off) Fall time − tf Total gate charge − Qg Gate-source charge − Qgs Gate-drain charge − Qgd Typ. − − − − 280 310 570 − 150 20 20 9 8 5 10 2.1 0.5 0.5 Max. ±10 − −1.0 −2.0 390 430 800 − − − − − − − − − − − Unit µA V µA V mΩ mΩ mΩ S pF pF pF ns ns ns ns nC nC nC Conditions VGS=±12V, VDS=0V ID= −1mA, VGS=0V VDS= −20V, VGS=0V VDS= −10V, ID= −1mA ID= −1A, VGS= −4.5V ID= −1A, VGS= −4V ID= −0.5A, VGS= −2.5V VDS= −10V, ID= −0.5A VDS= −10V VGS=0V f=1MHz ID= −0.5A VDD −15V VGS= −4.5V RL=30Ω RG=10Ω VDD −15V RL=15Ω VGS= −4.5V RG=10Ω ID= −1A 2/4 US6J2 Transistors zElectrical characteristic curves 10000 Ciss 100 8 Ta=25°C VDD= −15V VGS= −4.5A RG=10Ω Pulsed 1000 tf 100 td (off) td (on) 10 tr Crss Coss 1 10 100 0.1 DRAIN-SOURCE VOLTAGE : −VDS (V) DRAIN CURRENT : −ID (A) 10 STATIC DRAIN-SOURCE ON-STATE RESISTANCE : RDS (on) (mΩ) Fig.1 Typical Capacitance vs. Drain-Source Voltage VDS= −10V Pulsed 1 Ta=125°C Ta=75°C Ta=25°C Ta= −25°C 0.1 0.01 0.001 0.6 1.0 1.4 1.8 2.2 2.6 3.0 VGS= −4.5V Pulsed Ta=125°C Ta=75°C Ta=25°C Ta= −25°C 0.1 1 1 0 10 10 DRAIN CURRENT : −ID (A) Fig.7 Static Drain-Source On-State Resistance vs. Drain Current (ΙΙ) 0.5 1.0 1.5 2.0 2.5 3.0 TOTAL GATE CHARGE : Qg (nC) Fig.2 Switching Characteristics Fig.3 Dynamic Input Characteristics 10 Ta=25°C Pulsed 750 ID= −1A ID= −0.5A 500 250 0 0 DRAIN CURRENT : −ID (A) 0 2 4 6 8 10 12 10000 1000 100 0.01 VGS= −4V Pulsed Ta=125°C Ta=75°C Ta=25°C Ta= −25°C 0.1 1 10 DRAIN CURRENT : −ID (A) Fig.8 Static Drain-Source On-State Resistance vs. Drain Current (ΙΙΙ) Ta=25°C VGS=0V Pulsed 1 0.1 0.01 0.0 0.5 1.0 1.5 SOURCE-DRAIN VOLTAGE : −VSD (V) Fig.6 Source Current vs. Source-Drain Voltage Fig.5 Static Drain-Source On-State Resistance vs. Gate-Source Voltage STATIC DRAIN-SOURCE ON-STATE RESISTANCE : RDS (on) (mΩ) STATIC DRAIN-SOURCE ON-STATE RESISTANCE : RDS (on) (mΩ) 100 0.01 2 GATE-SOURCE VOLTAGE : −VGS (V) Fig.4 Typical Transfer Characteristics 1000 3 1000 GATE-SOURCE VOLTAGE : −VGS (V) 10000 1 4 SOURCE CURRENT : −IS (A) 0.1 1 0.01 5 STATIC DRAIN-SOURCE ON-STATE RESISTANCE : RDS (on) (mΩ) 10 0.01 Ta=25°C 7 VDD= −15V ID= −1A 6 RG=10Ω Pulsed GATE-SOURCE VOLTAGE : −VGS (V) Ta=25°C f=1MHz VGS=0V SWITCHING TIME : t (ns) CAPACITANCE : C (pF) 1000 10000 1000 100 0.01 VGS= −2.5V Pulsed Ta=125°C Ta=75°C Ta=25°C Ta= −25°C 0.1 1 10 DRAIN CURRENT : −ID (A) Fig.9 Static Drain-Source On-State Resistance vs. Drain Current (Ι) 3/4 US6J2 Transistors zMeasurement circuits Pulse Width VGS ID VDS VGS 10% 50% 90% 50% RL 10% D.U.T. 10% RG VDD VDS 90% td(on) 90% td(off) tr ton Fig.10 Switching Time Measurement Circuit tf toff Fig.11 Switching Waveforms VG VGS ID VDS RL IG(Const.) D.U.T. Qg VGS Qgs RG Qgd VDD Charge Fig.12 Gate Charge Measurement Circuit Fig.13 Gate Charge Waveform 4/4 Appendix Notes No technical content pages of this document may be reproduced in any form or transmitted by any means without prior permission of ROHM CO.,LTD. The contents described herein are subject to change without notice. The specifications for the product described in this document are for reference only. Upon actual use, therefore, please request that specifications to be separately delivered. Application circuit diagrams and circuit constants contained herein are shown as examples of standard use and operation. Please pay careful attention to the peripheral conditions when designing circuits and deciding upon circuit constants in the set. Any data, including, but not limited to application circuit diagrams information, described herein are intended only as illustrations of such devices and not as the specifications for such devices. ROHM CO.,LTD. disclaims any warranty that any use of such devices shall be free from infringement of any third party's intellectual property rights or other proprietary rights, and further, assumes no liability of whatsoever nature in the event of any such infringement, or arising from or connected with or related to the use of such devices. Upon the sale of any such devices, other than for buyer's right to use such devices itself, resell or otherwise dispose of the same, no express or implied right or license to practice or commercially exploit any intellectual property rights or other proprietary rights owned or controlled by ROHM CO., LTD. is granted to any such buyer. Products listed in this document use silicon as a basic material. Products listed in this document are no antiradiation design. The products listed in this document are designed to be used with ordinary electronic equipment or devices (such as audio visual equipment, office-automation equipment, communications devices, electrical appliances and electronic toys). Should you intend to use these products with equipment or devices which require an extremely high level of reliability and the malfunction of with would directly endanger human life (such as medical instruments, transportation equipment, aerospace machinery, nuclear-reactor controllers, fuel controllers and other safety devices), please be sure to consult with our sales representative in advance. About Export Control Order in Japan Products described herein are the objects of controlled goods in Annex 1 (Item 16) of Export Trade Control Order in Japan. In case of export from Japan, please confirm if it applies to "objective" criteria or an "informed" (by MITI clause) on the basis of "catch all controls for Non-Proliferation of Weapons of Mass Destruction. Appendix1-Rev1.0