TSAL6102 www.vishay.com Vishay Semiconductors High Power Infrared Emitting Diode, 940 nm, GaAlAs, MQW FEATURES • Package type: leaded • Package form: T-1¾ • Dimensions (in mm): Ø 5 • Peak wavelength: p = 940 nm • High reliability • High radiant power • High radiant intensity • Angle of half intensity: = ± 10° • Low forward voltage 94 8389 • Suitable for high pulse current operation • Good spectral matching with Si photodetectors • Material categorization: for definitions of compliance please see www.vishay.com/doc?99912 DESCRIPTION APPLICATIONS TSAL6102 is an infrared, 940 nm emitting diode in GaAlAs multi quantum well (MQW) technology with high radiant power and high speed molded in a blue-gray plastic package. • Infrared remote requirements control units with high power • Free air transmission systems • Infrared source for optical counters and card readers • IR source for smoke detectors PRODUCT SUMMARY COMPONENT Ie (mW/sr) (deg) p (nm) tr (ns) 220 ± 10 940 15 TSAL6102 Note • Test conditions see table “Basic Characteristics” ORDERING INFORMATION ORDERING CODE TSAL6102 PACKAGING REMARKS PACKAGE FORM Bulk MOQ: 4000 pcs, 4000 pcs/bulk T-1¾ Note • MOQ: minimum order quantity ABSOLUTE MAXIMUM RATINGS (Tamb = 25 °C, unless otherwise specified) PARAMETER SYMBOL VALUE Reverse voltage TEST CONDITION VR 5 UNIT V Forward current IF 100 mA Peak forward current tp/T = 0.5, tp = 100 μs IFM 200 mA Surge forward current tp = 100 μs IFSM 1.5 A Power dissipation PV 160 mW Junction temperature Tj 100 °C Tamb -40 to +85 °C °C Operating temperature range Storage temperature range Soldering temperature Thermal resistance junction/ambient Rev. 1.0, 27-Aug-15 Tstg -40 to +100 t 5 s, 2 mm from case Tsd 260 °C J-STD-051, leads 7 mm soldered on PCB RthJA 230 K/W Document Number: 84337 1 For technical questions, contact: [email protected] THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000 TSAL6102 www.vishay.com Vishay Semiconductors 120 160 IF - Forward Current (mA) PV - Power Dissipation (mW) 180 140 120 100 RthJA = 230 K/W 80 60 40 100 80 RthJA = 230 K/W 60 40 20 20 0 0 0 10 20 30 40 50 60 70 80 90 100 0 10 21212 Tamb - Ambient Temperature (°C) 21211 Fig. 1 - Power Dissipation Limit vs. Ambient Temperature 20 30 40 50 60 70 80 90 100 Tamb - Ambient Temperature (°C) Fig. 2 - Forward Current Limit vs. Ambient Temperature BASIC CHARACTERISTICS (Tamb = 25 °C, unless otherwise specified) PARAMETER TEST CONDITION Forward voltage Radiant power TYP. MAX. UNIT V VF 1.35 1.6 IF = 1 A, tp = 100 μs VF 2.2 3 IF = 1 mA TKVF -1.8 Reverse current Radiant intensity MIN. IF = 100 mA, tp = 20 ms Temperature coefficient of VF Junction capacitance SYMBOL V mV/K VR = 5 V IR VR = 0 V, f = 1 MHz, E = 0 Cj IF = 100 mA, tp = 20 ms Ie 150 220 1100 1650 mW/sr 40 mW 10 μA 300 mW/sr 40 pF IF = 1 A, tp = 100 μs Ie IF = 100 mA, tp = 20 ms e IF = 20 mA TKe -0.6 %/K ± 10 deg nm Temperature coefficient of e Angle of half intensity Peak wavelength IF = 100 mA p 940 Spectral bandwidth IF = 100 mA 30 nm Temperature coefficient of p IF = 100 mA TKp 0.2 nm/K Rise time IF = 100 mA tr 15 ns Fall time IF = 100 mA tf 15 ns BASIC CHARACTERISTICS (Tamb = 25 °C, unless otherwise specified) 1000 IF - Forward Current (mA) I F - Forward Current (A) 10 1 IFSM = 1 A (Single Pulse) t p/T = 0.01 0.05 10 0 0.1 0.5 1.0 10 -1 -2 10 96 11987 10 tp = 100 µs tp/T= 0.001 1 10 -1 10 0 10 1 t p - Pulse Duration (ms) 0 10 2 Fig. 3 - Pulse Forward Current vs. Pulse Duration Rev. 1.0, 27-Aug-15 100 21534 1 2 3 VF - Forward Voltage (V) Fig. 4 - Forward Current vs. Forward Voltage Document Number: 84337 2 For technical questions, contact: [email protected] THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000 TSAL6102 www.vishay.com Vishay Semiconductors 10000 100 Φe rel - Relative Radiant Power (%) 1000 100 10 1 90 80 60 50 40 30 20 10 0.1 1 10 100 0 840 1000 IF - Forward Current (mA) IF = 30 mA 70 880 Fig. 5 - Radiant Intensity vs. Forward Current 920 960 0° 10° 20° 30° Ie rel - Relative Radiant Intensity tp = 100 μs Phie - Radiant Power (mW) 1040 Fig. 8 - Relative Radiant Power vs. Wavelength 1000 100 10 1 0.1 1 1000 λ - Wavelength (nm) 21445 10 100 40° 1.0 0.9 50° 0.8 60° 70° 0.7 ϕ - Angular Displacement Ie - Radiant Intensity (mW/sr) tp = 100 μs 80° 1000 0.6 IF - Forward Current (mA) 0.4 0.2 0 15989 Fig. 6 - Radiant Power vs. Forward Current Fig. 9 - Relative Radiant Intensity vs. Angular Displacement 1.6 Ie rel; Φe rel 1.2 IF = 20 mA 0.8 0.4 0 -10 0 10 94 7993 50 100 140 T amb - Ambient Temperature (°C) Fig. 7 - Rel. Radiant Intensity/Power vs. Ambient Temperature Rev. 1.0, 27-Aug-15 Document Number: 84337 3 For technical questions, contact: [email protected] THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000 TSAL6102 www.vishay.com Vishay Semiconductors PACKAGE DIMENSIONS in millimeters Ø 5.8 ± 0.15 C R2.49 (sphere) (4.4) 35.2 ± 0.55 < 0.7 8.7 ± 0.3 7.7 ± 0.15 A Area not plane Ø 5 ± 0.15 1 min. + 0.2 0.6 - 0.1 + 0.15 0.5 - 0.05 + 0.15 0.5 - 0.05 technical drawings according to DIN specifications 2.54 nom. 6.544-5259.08-4 Issue: 3; 19.05.09 14436 Rev. 1.0, 27-Aug-15 Document Number: 84337 4 For technical questions, contact: [email protected] THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. 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