TSHA4400, TSHA4401 Datasheet

TSHA4400, TSHA4401
www.vishay.com
Vishay Semiconductors
Infrared Emitting Diode, 875 nm, GaAlAs
FEATURES
•
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•
•
•
•
•
•
•
•
94 8636
Package type: leaded
Package form: T-1
Dimensions (in mm): Ø 3
Peak wavelength: p = 875 nm
High reliability
Angle of half intensity:  = ± 20°
Low forward voltage
Suitable for high pulse current operation
Good spectral matching with Si photodetectors
Material categorization: for definitions of compliance
please see www.vishay.com/doc?99912
APPLICATIONS
DESCRIPTION
• Infrared remote control and free air data transmission
systems with comfortable radiation angle
• This emitter series is dedicated to systems with panes in
transmission space between emitter and detector,
because of the low absorption of 875 nm radiation in glass
The TSHA440. series are infrared, 875 nm emitting diodes in
GaAlAs technology, molded in a clear, untinted plastic
package.
PRODUCT SUMMARY
Ie (mW/sr)
 (deg)
p (nm)
tr (ns)
TSHA4400
20
± 20
875
600
TSHA4401
30
± 20
875
600
COMPONENT
Note
• Test conditions see table “Basic Characteristics”
ORDERING INFORMATION
PACKAGING
REMARKS
PACKAGE FORM
TSHA4400
ORDERING CODE
Bulk
MOQ: 5000 pcs, 5000 pcs/bulk
T-1
TSHA4401
Bulk
MOQ: 5000 pcs, 5000 pcs/bulk
T-1
Note
• MOQ: minimum order quantity
ABSOLUTE MAXIMUM RATINGS (Tamb = 25 °C, unless otherwise specified)
SYMBOL
VALUE
Reverse voltage
PARAMETER
TEST CONDITION
VR
5
UNIT
V
Forward current
IF
100
mA
200
mA
Peak forward current
tp/T = 0.5, tp = 100 μs
IFM
Surge forward current
tp = 100 μs
IFSM
2
A
PV
180
mW
°C
Power dissipation
Junction temperature
Tj
100
Operating temperature range
Tamb
-40 to +85
°C
Storage temperature range
Tstg
-40 to +100
°C
t  5 s, 2 mm from case
Tsd
260
°C
J-STD-051, leads 7 mm, soldered on PCB
RthJA
300
K/W
Soldering temperature
Thermal resistance junction/ambient
Rev. 1.8, 15-Sep-14
Document Number: 81017
1
For technical questions, contact: [email protected]
THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT
ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000
TSHA4400, TSHA4401
www.vishay.com
Vishay Semiconductors
120
200
160
IF - Forward Current (mA)
PV - Power Dissipation (mW)
180
140
120
RthJA = 300 K/W
100
80
60
40
100
80
RthJA = 300 K/W
60
40
20
20
0
0
0
10
21311
20
30
40
50
60
70 80
90 100
0
Tamb - Ambient Temperature (°C)
Fig. 1 - Power Dissipation Limit vs. Ambient Temperature
10
20 30 40
50 60 70 80
90 100
Tamb - Ambient Temperature (°C)
21312
Fig. 2 - Forward Current Limit vs. Ambient Temperature
BASIC CHARACTERISTICS (Tamb = 25 °C, unless otherwise specified)
PARAMETER
TEST CONDITION
SYMBOL
TYP.
MAX.
UNIT
IF = 100 mA, tp = 20 ms
VF
1.5
1.8
V
IF = 1.5 A, tp = 100 μs
VF
3.2
4.9
V
IF = 100 mA
TKVF
-1.6
VR = 5 V
IR
VR = 0 V, f = 1 MHz, E = 0
Cj
20
pF
IF = 100 mA
TKe
-0.7
%/K

± 20
deg
Peak wavelength
IF = 100 mA
p
875
nm
Spectral bandwidth
IF = 100 mA

80
nm
Temperature coefficient of p
IF = 100 mA
TKp
0.2
nm/K
IF = 100 mA
tr
600
ns
IF = 1.5 A
tr
300
ns
IF = 100 mA
tf
600
ns
IF = 1.5 A
tf
300
ns
d
1.8
mm
Forward voltage
Temperature coefficient of VF
Reverse current
Junction capacitance
Temperature coefficient of e
Angle of half intensity
Rise time
Fall time
Virtual source diameter
MIN.
mV/K
100
μA
TYPE DEDICATED CHARACTERISTICS (Tamb = 25 °C, unless otherwise specified)
PARAMETER
TEST CONDITION
IF = 100 mA, tp = 20 ms
Radiant intensity
IF = 1.5 mA, tp = 100 μs
Radiant power
Rev. 1.8, 15-Sep-14
IF = 100 mA, tp = 20 ms
PART
SYMBOL
MIN.
TYP.
MAX.
UNIT
TSHA4400
Ie
12
20
60
mW/sr
TSHA4401
Ie
16
30
60
mW/sr
TSHA4400
Ie
140
240
mW/sr
TSHA4401
Ie
190
360
mW/sr
TSHA4400
e
20
mW
TSHA4401
e
24
mW
Document Number: 81017
2
For technical questions, contact: [email protected]
THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT
ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000
TSHA4400, TSHA4401
www.vishay.com
Vishay Semiconductors
BASIC CHARACTERISTICS (Tamb = 25 °C, unless otherwise specified)
1000
Ie - Radiant Intensity (mW/sr)
IF - Forward Current (A)
10 1
t p /T = 0.01, I FM = 2 A
0.02
10 0
0.05
0.1
0.2
TSHA 4401
100
TSHA 4400
10
0.5
10 -1
10 -2
94 7947
1
10 -1
10 0
10 1
t p - Pulse Duration (ms)
10 2
10 0
Fig. 3 - Pulse Forward Current vs. Pulse Duration
Φ e - Radiant Power (mW)
IF - Forward Current (mA)
1000
tp = 100 µs
tp/T= 0.001
10 3
10 2
100
10
1
0.1
0
1
2
3
4
V F - Forward Voltage (V)
94 8005
10 0
10 1
10 2
10 3
I F - Forward Current (mA)
94 7943
Fig. 4 - Forward Current vs. Forward Voltage
10 4
Fig. 7 - Radiant Power vs. Forward Current
1.2
1.6
1.1
1.2
IF = 10 mA
I e rel; Φe rel
VF rel - Relative Forward Voltage (V)
10 4
Fig. 6 - Radiant Intensity vs. Forward Current
10 4
10 1
10 1
10 2
10 3
I F - Forward Current (mA)
94 7942
1.0
0.9
I F = 20 mA
0.8
0.4
0.8
0
- 10 0 10
0.7
0
94 7990
20
40
60
80
100
Tamb - Ambient Temperature (°C)
Fig. 5 - Relative Forward Voltage vs. Ambient Temperature
Rev. 1.8, 15-Sep-14
94 8020
50
100
140
Tamb - Ambient Temperature (°C)
Fig. 8 - Relative Radiant Intensity/Power vs. Ambient Temperature
Document Number: 81017
3
For technical questions, contact: [email protected]
THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT
ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000
TSHA4400, TSHA4401
www.vishay.com
Vishay Semiconductors
0°
10°
20°
1.0
0.75
0.5
0.25
I F = 100 mA
Φ e ( λ ) rel = Φ e ( λ ) / Φ e ( λ p )
0
780
980
880
λ - Wavelenght (nm)
94 8000
Fig. 9 - Relative Radiant Power vs. Wavelength
30°
40°
1.0
0.9
50°
0.8
60°
70°
0.7
80°
0.6
0.4
0.2
ϕ - Angular Displacement
Ie, rel - Relative Radiant Intensity
Φe - Relative Radiant Power
1.25
0
Fig. 10 - Relative Radiant Intensity vs. Angular Displacement
PACKAGE DIMENSIONS in millimeters
A
< 0.6
(2.5)
3.4 ± 0.15
R1.4 (sphere)
AREA NOT PLANE
5.8 ± 0.3
34.4 ± 0.5
4.4 ± 0.3
3.2 ± 0.15
C
Ø 2.9 ± 0.1
1.5 ± 0.5
+ 0.15
0.5
+ 0.2
- 0.1
0.4 - 0.05
2.54 nom.
technical drawings
according to DIN
specifications
Drawing-No.: 6.544-5264.01-4
Issue: 4; 28.07.14
Rev. 1.8, 15-Sep-14
Document Number: 81017
4
For technical questions, contact: [email protected]
THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT
ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000
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Revision: 02-Oct-12
1
Document Number: 91000