Factsheet

P2RAM3V
C35/H35/S35 – Memory IP – OTP
Functional Block Diagram
• In/Out Bus Width
8bit
byte15
• Supply Voltage Range 1.5V to 3.6V
• Burn Voltage
3.4V at 25°C
• Burn Current
< 100mA
• Burn Time
10µs to 20µs per bit
• Read Access Time
9ns
• Block Area
0.030mm (1byte)
2
pout
1x8 to 16x8, scalable
...
• Bits Organization
Address Decoder
Key Parameter
byte1
byte0
DataIO
Special Function Register
2
0.089mm (8byte)
Logic
2
0.159mm (16byte)
Process Characteristics
Block Features
• Fabrication Process
0.35µm (C35/H35/S35)
• Scalable memory building block
• Process Option
Standard and isolated
• Fully static RAM operation
• Storage Element
PolyFuse
• Latched parallel outputs
• Temperature Range
-40˚C to 150˚C
• Synchronous I/O interface
• Data Retention
10 years at 150˚C
• Infield programming
• Load Cycles
1E9 cycles
• Auto-load triggered with POR
General Description
The IP-block represents a one-time programmable (OTP) memory device consisting of a
combination of a static RAM and a permanent storage of data using PolyFuse bit cells.
During operation the data is stored in the static RAM cell. Read/Write operations are performed on
the block just as for a static RAM block. There are special operating modes available to store the
data permanently into the PolyFuse element (burning operation mode) and to transfer data from the
PolyFuse element into the static RAM cell (load operating mode).
The memory is modularly organized and can be adapted from 1byte up to 16bytes in 1byte steps.
Each bit cell is driving a parallel output signal (pout), which can be directly used for trimming
purpose.
An 8bit DataIO block and a modular Address Decoder together with the memory bytes are building
a macro block which is controlled by a Special Function Register (SFR) logic block. This SFR is
available as Verilog code and flexible to be used embedded into the digital logic of the rest of the
chip. An Auto-load operation can be asynchronously triggered by an external POR signal.
No additional power supply for fuse operation is required; the supply has to be able to drive a
current of maximum 100mA for the burning time by using an external capacitance for stabilization.
For further information and requests, e-mail us at: [email protected]
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Disclaimer: This information is provided by ams AG “AS IS” and any express or implied warranties, including, but not limited
to the implied warranties of merchantability and fitness for a particular purpose are disclaimed.
Memory IP Factsheet
www.ams.com
[v1-00] 2014-May