P2RAM3V C35/H35/S35 – Memory IP – OTP Functional Block Diagram • In/Out Bus Width 8bit byte15 • Supply Voltage Range 1.5V to 3.6V • Burn Voltage 3.4V at 25°C • Burn Current < 100mA • Burn Time 10µs to 20µs per bit • Read Access Time 9ns • Block Area 0.030mm (1byte) 2 pout 1x8 to 16x8, scalable ... • Bits Organization Address Decoder Key Parameter byte1 byte0 DataIO Special Function Register 2 0.089mm (8byte) Logic 2 0.159mm (16byte) Process Characteristics Block Features • Fabrication Process 0.35µm (C35/H35/S35) • Scalable memory building block • Process Option Standard and isolated • Fully static RAM operation • Storage Element PolyFuse • Latched parallel outputs • Temperature Range -40˚C to 150˚C • Synchronous I/O interface • Data Retention 10 years at 150˚C • Infield programming • Load Cycles 1E9 cycles • Auto-load triggered with POR General Description The IP-block represents a one-time programmable (OTP) memory device consisting of a combination of a static RAM and a permanent storage of data using PolyFuse bit cells. During operation the data is stored in the static RAM cell. Read/Write operations are performed on the block just as for a static RAM block. There are special operating modes available to store the data permanently into the PolyFuse element (burning operation mode) and to transfer data from the PolyFuse element into the static RAM cell (load operating mode). The memory is modularly organized and can be adapted from 1byte up to 16bytes in 1byte steps. Each bit cell is driving a parallel output signal (pout), which can be directly used for trimming purpose. An 8bit DataIO block and a modular Address Decoder together with the memory bytes are building a macro block which is controlled by a Special Function Register (SFR) logic block. This SFR is available as Verilog code and flexible to be used embedded into the digital logic of the rest of the chip. An Auto-load operation can be asynchronously triggered by an external POR signal. No additional power supply for fuse operation is required; the supply has to be able to drive a current of maximum 100mA for the burning time by using an external capacitance for stabilization. For further information and requests, e-mail us at: [email protected] ___________________________________________________________________________________________________ Disclaimer: This information is provided by ams AG “AS IS” and any express or implied warranties, including, but not limited to the implied warranties of merchantability and fitness for a particular purpose are disclaimed. Memory IP Factsheet www.ams.com [v1-00] 2014-May