EEPROM 128x8 H35 – Memory IP – NVM Key Parameter Functional Block Diagram 128x8 = 1024bit • Number of Pages 32 • In/Out Bus Width 8bit • Supply Voltage Write 2.3V to 5.5V • Supply Voltage Read 2.3V to 5.5V • Typ. Read Current 100µA @ 1MHz • Typ. Write Current 85µA • Write Time 6ms • Read Access Time 100ns • Block Area 0.54mm Address Decoder Control Logic • Bits Organization Charge Pump Memory Array 3072bit DataIO / Sense Amplifier 2 Process Characteristics Block Features • Fabrication Process 0.35µm (H35EE) • Fixed memory building block • Process Option EEPROM midox • Fully static RAM operation • Storage Element SimpleEE • Fully differential sense amplifier • Temperature Range -40˚C to 125˚C • Synchronous I/O interface • Data Retention 20years at 125˚C • Write Cycles 100k cycles at 125˚C General Description The IP-block represents a non-volatile memory (NVM) device using a SimpleEE floating gate bit cell, intended for use in embedded micro controller systems. The movement of the charge in and out of the floating gate is done by the Fowler-Nordheim tunneling mechanism. Access to the IP-block is similar to a static RAM, except the write access, which is more time consuming. To speed up write operations, the memory core is organized in 32 pages with 4 columns of 8bit each, where each write operation addresses one page. The voltage required to program and to erase the memory cell is in the range of 14V, which is internally generated by an integrated Charge Pump. A DataIO block with integrated Sense Amplifier together with the Address Decoder, Charge Pump and the Memory Array is managed by the Control Logic block. Special test modes for NVM bit cell screening are implemented and executed in the production test flow in order to ensure reliability of the NVM. The device is optimized for low power operation by shutting down the sense amplifier after sensing the state of the bit cells. For further information and requests, e-mail us at: [email protected] ___________________________________________________________________________________________________ Disclaimer: This information is provided by ams AG “AS IS” and any express or implied warranties, including, but not limited to the implied warranties of merchantability and fitness for a particular purpose are disclaimed. Memory IP Factsheet www.ams.com [v1-00] 2014-May