DG441, DG442 Data Sheet June 1999 Monolithic, Quad SPST, CMOS Analog Switches The DG441 and DG442 monolithic CMOS analog switches are drop-in replacements for the popular DG201A and DG202 series devices. They include four independent single pole single throw (SPST) analog switches, TTL and CMOS compatible digital inputs, and a voltage reference for logic thresholds. These switches feature lower analog ON resistance (<85Ω) and faster switch time (tON < 250ns) compared to the DG201A and DG202. Charge injection has been reduced, simplifying sample and hold applications. The improvements in the DG441 series are made possible by using a high voltage silicon-gate process. An epitaxial layer prevents the latch-up associated with older CMOS technologies. The 44V maximum voltage range permits controlling 40VP-P signals. Power supplies may be singleended from +5V to +34V, or split from ±5V to ±20V. The four switches are bilateral, equally matched for AC or bidirectional signals. The ON resistance variation with analog signals is quite low over a ±5V analog input range. The switches in the DG441 and DG442 are identical, differing only in the polarity of the selection logic. Ordering Information PART NUMBER TEMP. RANGE (oC) File Number 3281.5 Features • ON Resistance (Max) . . . . . . . . . . . . . . . . . . . . . . . . . 85Ω • Low Power Consumption (PD) . . . . . . . . . . . . . . . <1.6mW • Fast Switching Action - tON (Max) . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 250ns - tOFF (Max, DG441). . . . . . . . . . . . . . . . . . . . . . . . 120ns • Low Charge Injection • Upgrade from DG201A/DG202 • TTL, CMOS Compatible • Single or Split Supply Operation Applications • Audio Switching • Battery Operated Systems • Data Acquisition • Hi-Rel Systems • Sample and Hold Circuits • Communication Systems • Automatic Test Equipment Functional Diagrams PACKAGE PKG. NO. DG441DJ -40 to 85 16 Ld PDIP E16.3 DG441DY -40 to 85 16 Ld SOIC M16.15 DG442DJ -40 to 85 16 Ld PDIP E16.3 DG442DY -40 to 85 16 Ld SOIC M16.15 DG441 DG442 S1 IN1 D1 S2 IN2 Pinout S1 IN1 D1 S2 IN2 D2 S3 DG441, DG442 (PDIP, SOIC) TOP VIEW IN3 D2 S3 IN3 D3 S4 IN1 1 16 IN2 D1 2 15 D2 S1 3 14 S2 V- 4 13 V+ GND 5 12 NC S4 6 11 S3 D4 7 10 D3 IN4 8 9 IN3 1 IN4 D3 S4 IN4 D4 D4 SWITCHES SHOWN FOR LOGIC “1” INPUT TRUTH TABLE LOGIC VIN DG441 DG442 0 ≤0.8V ON OFF 1 ≥2.4V OFF ON CAUTION: These devices are sensitive to electrostatic discharge; follow proper IC Handling Procedures. http://www.intersil.com or 407-727-9207 | Copyright © Intersil Corporation 1999 DG441, DG442 Schematic Diagram (One Channel) V+ S VV+ INX D GND 1 PER DIE COMMON TO EVERY CHANNEL V- Pin Descriptions PIN SYMBOL DESCRIPTION 1 IN1 Logic Control for Switch 1 2 D1 Drain (Output) Terminal for Switch 1 3 S1 Source (Input) Terminal for Switch 1 4 V- Negative Power Supply Terminal 5 GND 6 S4 Source (Input) Terminal for Switch 4 7 D4 Drain (Output) Terminal for Switch 4 8 IN4 Logic Control for Switch 4 9 IN3 Logic Control for Switch 3 10 D3 Drain (Output) Terminal for Switch 3 11 S3 Source (Input) Terminal for Switch 3 12 NC No Internal Connection 13 V+ Positive Power Supply Terminal (Substrate) 14 S2 Source (Input) Terminal for Switch 2 15 D2 Drain (Output) Terminal for Switch 2 16 IN2 Logic Control for Switch 2 Ground Terminal (Logic Common) 2 DG441, DG442 Absolute Maximum Ratings Thermal Information V+ to V- . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 44.0V GND to V-. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 25V Digital Inputs, VS, VD (Note 1) . . . . . (V-) -2V to (V+) + 2V or 30mA, Whichever Occurs First Continuous Current (Any Terminal) . . . . . . . . . . . . . . . . . . . . . 30mA Peak Current, S or D (Pulsed 1ms, 10% Duty Cycle Max) . . 100mA Thermal Resistance (Typical, Note 2) θJA (oC/W) PDIP Package . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 90 SOIC Package . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 115 Maximum Junction Temperature (Plastic Packages) . . . . . . .150oC Maximum Storage Temperature Range . . . . . . . . . . -65oC to 150oC Maximum Lead Temperature (Soldering 10s) . . . . . . . . . . . . 300oC (SOIC - Lead Tips Only) Operating Conditions Temperature Range . . . . . . . . . . . . . . . . . . . . . . . . . . -40oC to 85oC Voltage Range . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . ±20V (Max) Input Low Voltage . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 0.8V (Max) Input High Voltage . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 2.4V (Min) Input Rise and Fall Time . . . . . . . . . . . . . . . . . . . . . . . . . . . . ≤20ns CAUTION: Stresses above those listed in “Absolute Maximum Ratings” may cause permanent damage to the device. This is a stress only rating and operation of the device at these or any other conditions above those indicated in the operational sections of this specification is not implied. NOTES: 1. Signals on SX, DX or INX exceeding V+ or V- will be clamped by internal diodes. Limit forward diode current to maximum current ratings. 2. θJA is measured with the component mounted on an evaluation PC board in free air. Electrical Specifications (Dual Supply) Test Conditions: V+ = +15V, V- = -15V, VIN = 2.4V, 0.8V, VANALOG = VS , VD, Unless Otherwise Specified PARAMETER TEST CONDITIONS TEMP (oC) MIN (NOTE 3) TYP MAX UNITS 25 - 150 250 ns 25 - 90 120 ns DYNAMIC CHARACTERISTICS RL = 1kΩ, CL = 35pF, VS = ±10V, (Figure 1) Turn-ON Time, tON Turn-OFF Time, tOFF DG441 - 110 210 ns Charge Injection, Q (Figure 2) DG442 CL = 1nF, VG = 0V, RG = 0Ω 25 - -1 - pC OFF Isolation (Figure 4) RL = 50Ω, CL = 5pF, f = 1MHz 25 - 60 - dB 25 - -100 - dB Crosstalk (Channel-to-Channel) (Figure 3) 25 - 4 - pF Drain OFF Capacitance, CD(OFF) Source OFF Capacitance, CS(OFF) f = 1MHz, VANALOG = 0 (Figure 5) 25 - 4 - pF Channel ON Capacitance, CD(ON) + CS(ON) 25 - 16 - pF DIGITAL INPUT CHARACTERISTICS Input Current VIN Low, IIL VIN Under Test = 0.8V, All Others = 2.4V Full -0.5 -0.00001 0.5 µA Input Current VIN High, IIH VIN Under Test = 2.4V, All Others = 0.8V Full -0.5 0.00001 0.5 µA Full -15 - 15 V 25 - 50 85 Ω ANALOG SWITCH CHARACTERISTICS Analog Signal Range, VANALOG Drain-Source ON Resistance, rDS(ON) IS = 10mA, VD = ±8.5V, V+ = 13.5V, V- = -13.5V Source OFF Leakage Current, IS(OFF) V+ = 16.5V, V- = -16.5V, VD = ±15.5V, VS = 15.5V Drain OFF Leakage Current, ID(OFF) V+ = 16.5V, V- = -16.5V, VS = VD = ±15.5V Channel ON Leakage Current, ID(ON) + IS(ON) 85 - - 100 Ω 25 -0.5 0.01 0.5 nA 85 -5 - 5 nA 25 -0.5 0.01 0.5 nA 85 -5 - 5 nA 25 -0.5 0.08 0.5 nA 85 -10 - 10 nA POWER SUPPLY CHARACTERISTICS Positive Supply Current, I+ V+ = 16.5V, V- = -16.5V, VIN = 0V or 5V Negative Supply Current, IGround Current, IGND 3 Full - 15 100 µA 25 -1 -0.0001 - µA Full -5 - - µA Full -100 -15 - µA DG441, DG442 Electrical Specifications (Single Supply) Test Conditions: V+ = 12V, V- = 0V, VIN = 2.4V, 0.8V, Unless Otherwise Specified PARAMETER TEST CONDITIONS TEMP (oC) MIN (NOTE 3) TYP MAX UNITS 25 - 300 450 ns 25 - 60 200 ns 25 - 2 - pC Full 0 - 12 V 25 - 100 160 Ω Full - - 200 Ω Full - 15 100 µA 25 -1 -0.0001 - µA Full -100 -0.0001 - µA Full -100 -15 - µA DYNAMIC CHARACTERISTICS Turn-ON Time, tON RL = 1kΩ, CL = 35pF, VS = 8V, (Figure 1) Turn-OFF Time, tOFF Charge Injection, Q (Figure 2) CL = 1nF, VG = 6V, RG = 0Ω ANALOG SWITCH CHARACTERISTICS Analog Signal Range, VANALOG Drain-Source ON Resistance, rDS(ON) IS = 10mA, VD = 3V, 8V V+ = 10.8V POWER SUPPLY CHARACTERISTICS Positive Supply Current, I+ V+ = 13.2V, V- = 0V, VIN = 0V or 5V Negative Supply Current, I- Ground Current, IGND NOTES: 3. Typical values are for DESIGN AID ONLY, not guaranteed nor production tested. Test Circuits and Waveforms VO is the steady state output with the switch on. Feedthrough via switch capacitance may result in spikes at the leading and trailing edge of the output waveform. V+ tr < 20ns tf < 20ns 3V LOGIC INPUT 50% SWITCH INPUT 0V tOFF SWITCH OUTPUT 80% VO IN1 SWITCH INPUT VS VO D1 S1 80% LOGIC INPUT 3V RL CL GND V- 0V tON NOTE: Logic input waveform is inverted for switches that have the opposite logic sense. Repeat test for Channels 2, 3 and 4. For load conditions, see Specifications. CL includes fixture and stray capacitance. RL V O = V S -----------------------------------R L + r DS ( ON ) FIGURE 1A. MEASUREMENT POINTS FIGURE 1B. TEST CIRCUIT FIGURE 1. SWITCHING TIMES 4 DG441, DG442 Test Circuits and Waveforms (Continued) V+ SWITCH OUTPUT ∆VO INX (DG441) OFF RG D1 VO OFF ON VG CL V- INX (DG442) VIN = 3V ON Q = ∆VO x CL OFF OFF GND FIGURE 2A. MEASUREMENT POINTS FIGURE 2B. TEST CIRCUIT FIGURE 2. CHARGE INJECTION +15V C SIGNAL GENERATOR 10dBm +15V V+ C SIGNAL GENERATOR 10dBm VS VD 50Ω IN1 IN2 0V, 2.4V V+ VS 0V, 2.4V VD ANALYZER INX C RL RL V- GND VD ANALYZER NC V- -15V GND FIGURE 3. CROSSTALK TEST CIRCUIT C -15V FIGURE 4. OFF ISOLATION TEST CIRCUIT +15V C V+ VS INX IMPEDANCE ANALYZER 0V, 2.4V VD f = 1MHz V- GND C -15V FIGURE 5. SOURCE/DRAIN CAPACITANCES TEST CIRCUIT 5 0V, 2.4V DG441, DG442 Application Information GAIN ERROR IS DETERMINED ONLY BY THE RESISTOR TOLERANCE. OP AMP OFFSET AND CMRR WILL LIMIT ACCURACY OF CIRCUIT. VIN +15V FET INPUT 7 -15V 4 OP AMP 3 6 2 VOUT +15V 13 3 2 GAIN1 AV = 1 1 R1 90kΩ 15 GAIN2 AV = 10 14 +15V 16 R2 5kΩ 10 GAIN3 AV = 20 11 9 R3 4kΩ + - SX DX 8 CH R4 1kΩ V4 5 - -15V INX GND VOUT + 6 7 GAIN4 AV = 100 1/4 DG442 VIN 1 = SAMPLE 0 = HOLD -15V V OUT R1 + R2 + R3 + R4 ---------------- = ------------------------------------------------- = 100 with SW 4 closed V IN R4 FIGURE 6. PRECISION WEIGHTED RESISTOR PROGRAMMABLE GAIN AMPLIFIER FIGURE 7. OPEN LOOP SAMPLE AND HOLD Typical Performance Curves 100 80 ±5V V+ = +15V V- = -15V 70 80 60 ±8V ±10V 60 rDS(ON) (Ω) rDS(ON) (Ω) 125oC ±12V 40 ±15V ±20V 50 40 20 10 0 VD (V) FIGURE 8. rDS(ON) vs VD AND POWER SUPPLY VOLTAGE 6 20 25oC 30 20 0 -20 85oC 0 -15 0oC -40oC -55oC 0 VD (V) FIGURE 9. rDS(ON) vs VD AND TEMPERATURE 15 DG441, DG442 Typical Performance Curves (Continued) 140 300 V+ = +12V V- = 0V 120 125oC 100 85oC V- = 0V 250 V+ = +5V 80 rDS(ON) (Ω) rDS(ON) (Ω) 200 25oC 60 0oC 40oC -55oC 40 +8V +10V 100 +12V +15V +20V 50 20 0 150 0 0 6 VD (V) 12 FIGURE 10. rDS(ON) vs VD AND TEMPERATURE (SINGLE 12V SUPPLY) 0 10 VD (V) 20 FIGURE 11. rDS(ON) vs VD AND SINGLE SUPPLY VOLTAGE 105 105 104 104 I+, IGND 103 I+, I-, IGND (nA) IIN (pA) 103 102 10 102 10 1 -(I-) 0.1 1 0.01 0.1 -55 0 50 TEMPERATURE (oC) 100 125 0.001 -55 FIGURE 12. INPUT CURRENT vs TEMPERATURE 0 50 TEMPERATURE (oC) 100 125 FIGURE 13. SUPPLY CURRENT vs TEMPERATURE 140 50 120 40 CROSSTALK V+ = +15V V- = -15V SINGLE SUPPLY V+ = +12V V- = 0V 30 100 20 Q (pC) (-dB) 80 OFF ISOLATION 60 10 0 CL = 10nF CL = 1nF 40 -10 20 0 100 V+ = +15V V- = -15V PGEN = 10dBm 1K CL = 10nF CL = 1nF -20 10K 100K FREQUENCY (Hz) 1M 10M FIGURE 14. CROSSTALK AND OFF ISOLATION vs FREQUENCY 7 -30 -10 -5 0 VS (V) 5 FIGURE 15. CHARGE INJECTION vs SOURCE VOLTAGE 10 DG441, DG442 Typical Performance Curves (Continued) 160 160 V+ = +15V V- = -15V tON (DG441) 140 140 tON 120 tON (DG442) 100 tON, tOFF (ns) tON, tOFF (ns) 120 tOFF (DG442) 80 100 80 tOFF 60 60 tOFF (DG441) 40 40 20 20 3 2 4 10 5 12 VIN (V) FIGURE 16. SWITCHING TIMES vs INPUT VOLTAGE 14 16 18 SUPPLY VOLTAGE (±V) 20 22 FIGURE 17. SWITCHING TIME vs POWER SUPPLY VOLTAGE (DG441) 2.4 20 IS(OFF) , ID(OFF) 0 1.6 -40 VIN (V) IS, ID (pA) -20 IS(ON) + ID(ON) 0.8 -60 V+ = +15V V- = -15V FOR I(OFF) , VD = -VS -80 -100 -15 0 -10 -5 0 VS , VD (V) 5 10 0 15 FIGURE 18. LEAKAGE CURRENT VS ANALOG VOLTAGE 5 10 15 SUPPLY VOLTAGE (±V) 20 FIGURE 19. SWITCHING THRESHOLD vs SUPPLY VOLTAGE 25 20 V+ = +15V V- = -15V V+ = +12V V- = 0V CS(ON) + CD(ON) 20 15 CS , D (pF) CS , D (pF) CS(ON) + CD(ON) 15 10 CS(OFF) , CD(OFF) 5 CS(OFF) , CD(OFF) 5 10 0 0 -15 -10 -5 0 VA (V) 5 10 FIGURE 20. SOURCE/DRAIN CAPACITANCE vs ANALOG VOLTAGE 8 15 0 6 VA (V) FIGURE 21. SOURCE/DRAIN CAPACITANCE vs ANALOG VOLTAGE (SINGLE 12V SUPPLY) 12 DG441, DG442 Typical Performance Curves (Continued) 10 400 V+ = +12V V- = 0V IS(OFF) , ID(OFF) tON (DG441) 0 tON, tOFF (ns) IS , ID (pA) 300 -10 -20 tON (DG442) 200 IS(ON) + ID(ON) 100 V+ = +12V V- = 0V FOR ID , VS = 0 FOR IS , VD = 0 -30 -40 0 6 VS , VD (V) 12 tOFF (DG442) tOFF (DG441) 0 2 3 FIGURE 22. SOURCE/DRAIN LEAKAGE CURRENTS (SINGLE 12V SUPPLY) FIGURE 23. SWITCHING TIME vs INPUT VOLTAGE (SINGLE 12V SUPPLY) 500 V- = 0V 400 tON, tOFF (ns) tON 300 200 100 tOFF 0 8 10 12 14 16 18 POSITIVE SUPPLY (V) 20 22 FIGURE 24. SWITCHING TIME vs SINGLE SUPPLY VOLTAGE (DG441) 9 4 VIN (V) 5 DG441, DG442 Die Characteristics DIE DIMENSIONS: PASSIVATION: 2160µm x 1760µm x 485µm Type: Nitride Thickness: 8kÅ ±1kÅ METALLIZATION: WORST CASE CURRENT DENSITY: Type: SiAl Thickness: 12kÅ ±1kÅ 9.1 x 104 A/cm2 Metallization Mask Layout DG441, DG442 D1 IN1 IN2 (2) (1) (16) (15) D2 S1 (3) (14) S2 V- (4) (13) V+ SUBSTRATE (12) NC GND (5) (11) S3 S4 (6) (7) D4 (8) IN4 (9) IN3 (10) D3 All Intersil semiconductor products are manufactured, assembled and tested under ISO9000 quality systems certification. Intersil semiconductor products are sold by description only. Intersil Corporation reserves the right to make changes in circuit design and/or specifications at any time without notice. Accordingly, the reader is cautioned to verify that data sheets are current before placing orders. Information furnished by Intersil is believed to be accurate and reliable. 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