INTERSIL IH5352CPE

IH5352
Data Sheet
July 1999
File Number
3134.2
Quad SPST, CMOS RF/Video Switch
Features
The IH5352 is a quad SPST, CMOS monolithic switch which
uses a “Series/Shunt” (“T” switch) configuration to obtain
high OFF isolation while maintaining good frequency
response in the ON condition.
• rDS(ON) . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 75Ω
Construction of remote and portable video equipment with
extended battery life is facilitated by the extremely low
current requirements. Switching speeds are typically
tON = 150ns and tOFF = 80ns. “Break-Before-Make”
switching is guaranteed.
Switch ON resistance is typically 40Ω - 50Ω with ±15V power
supplies, increasing to typically 175Ω for ±5V supplies.
• OFF Isolation at 10MHz . . . . . . . . . . . . . . . . . . . . . >70dB
• Crosstalk Isolation at 10MHz . . . . . . . . . . . . . . . . . >60dB
• Compatible With TTL, CMOS Logic
• Wide Operating Power Supply Range
• Power Supply Current . . . . . . . . . . . . . . . . . . . . . . . <1µA
• “Break-Before-Make” Switching
• Fast Switching (Typ) . . . . . . . . . . . . . . . . . . . . 80ns/150ns
Ordering Information
PART NUMBER
• Switch Attenuation Varies Less Than 3dB From DC to
100MHz
TEMP.
RANGE (oC)
PACKAGE
PKG.
NO.
IH5352CPE
0 to 70
16 Ld PDIP
E16.3
IH5352CBP
0 to 70
20 Ld SOIC
M20.3
Applications
• Video Switch
• Communications Equipment
• Disk Drives
Pinouts
• Instrumentation
IH5352
(PDIP)
TOP VIEW
• CATV
Functional Diagram
IIN1 1
16 D1
S1 2
15 V+
IIN2 3
14 D2
13 GND
S2 4
IIN3 5
12 D3
S3 6
11 V-
IIN4 7
10 D4
S4 8
9 VL
S1
D1
IIN1
S2
D2
IIN2
S3
IH5352
(SOIC)
TOP VIEW
D3
IIN3
IIN1 1
20 D1
S1 2
19 V+
NC 3
18 NC
IIN2 4
17 D2
S2 5
SWITCH STATE SHOWN FOR LOGIC “0” INPUT
S4
D4
IIN4
16 GND
IIN3 6
15 D3
S3 7
14 V-
NC 8
13 NC
IIN4 9
12 D4
S4 10
11 VL
1
TRUTH TABLE
LOGIC
SWITCHES
0
Off
1
On
CAUTION: These devices are sensitive to electrostatic discharge; follow proper IC Handling Procedures.
http://www.intersil.com or 407-727-9207 | Copyright © Intersil Corporation 1999
IH5352
Schematic Diagram
1/ IH5352
4
+15V
-15V
Q3
Q5
Q7
Q20
Q18
Q17
+15V
Q19
10kΩ
5kΩ
Q3
S
-15V
Q1
Q8
TTL
-15V
Q16
Q22
5
Q9
Q10
+15V
Q21
+15V
+5V
5kΩ
Q4
Q15
3kΩ Q
12
Q6
+15V
Q11
D
Q13
-15V
2
Q14
IH5352
Absolute Maximum Ratings
Thermal Information
V+ to Ground . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . +18V
V- to Ground. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . -18V
VL to Ground . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . V+ to VLogic Control Voltage. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . V+ to VAnalog Input Voltage . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . V+ to VCurrent (Any Terminal). . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 50mA
Thermal Resistance (Typical, Note 1)
θJA (oC/W)
SOIC Package . . . . . . . . . . . . . . . . . . . . . . . . . . . . .
90
PDIP Package . . . . . . . . . . . . . . . . . . . . . . . . . . . . .
90
Maximum Junction Temperature (Plastic Packages) . . . . . . .150oC
Maximum Storage Temperature Range . . . . . . . . . . -65oC to 150oC
Maximum Lead Temperature (Soldering, 10s). . . . . . . . . . . . 300oC
(SOIC - Lead Tips Only)
Operating Conditions
Temperature Range . . . . . . . . . . . . . . . . . . . . . . . . . . . 0oC to 70oC
Supply Voltage Range
V+, VL . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 5V to 15V
V- . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . -5V to -15V
CAUTION: Stresses above those listed in “Absolute Maximum Ratings” may cause permanent damage to the device. This is a stress only rating and operation of the
device at these or any other conditions above those indicated in the operational sections of this specification is not implied.
NOTE:
1. θJA is measured with the component mounted on an evaluation PC board in free air.
Electrical Specifications
V+ = +15V, VL = +5V, V- = -15V, Unless Otherwise Specified
PARAMETER
TEST CONDITIONS
(NOTE 2)
TYP
25oC
(NOTE 4)
0 oC
25oC
70oC
UNITS
150
-
-
-
ns
80
-
-
-
ns
DYNAMIC CHARACTERISTICS
Turn ON Time, tON
Figure 1
Turn OFF Time, tOFF
OFF Isolation, OIRR
Figure 2
70
-
-
-
dB
Crosstalk, CCRR
Figure 3
-60
-
-
-
dB
Switch Attenuation 3dB Frequency, f3dB
Figure 4
100
-
-
-
MHz
Logic “1” Input Voltage, VIH
>2.4
-
-
-
V
Logic “0” Input Voltage, VIL
<0.8
-
-
-
V
VIN > 2.4V or < 0V
0.1
±1
±1
10
µA
VD = ±5V, IS = 10mA, VIN ≥ 2.4V
50
75
75
100
Ω
VD = ±10V, IS = 10mA, VIN ≥ 2.4V
100
150
150
175
Ω
V+ = VL = +5V, VIN = 3V, V- = -5V,
VD = ±3V, IS = 10mA
175
300
300
350
Ω
DIGITAL INPUT CHARACTERISTICS
Input Logic Current, IIN
ANALOG SWITCH CHARACTERISTICS
Drain-Source ON Resistance, rDS(ON)
On Resistance Match Between Channels, ∆rDS(ON)
IS = 10mA, VD = ±5V
5
-
-
-
Ω
Switch OFF Leakage Current, ID(OFF) or IS(OFF)
VS/D = ±5V or ±14V, VIN ≤ 0.8V (Note 3)
-
-
±2
100
nA
Switch ON Leakage Current, ID(ON) + IS(ON)
VS/D = ±5V or ±14V, VIN ≥ 2.4V
-
-
±2
100
nA
0.1
1
1
10
µA
Negative Supply Quiescent Current, I-
0.1
1
1
10
µA
Logic Supply Quiescent Current, IL
0.1
1
1
10
µA
POWER SUPPLY CHARACTERISTICS
Positive Supply Quiescent Current, I+
VIN = 0V or +5V
NOTES:
2. Typical values are not tested in production. They are given as a design aid only.
3. Positive and negative voltages applied to opposite sides of switch, in both directions successively.
4. Min or Max value, unless otherwise specified.
3
IH5352
Test Circuits and Waveforms
VANALOG
(±5V)
VOUT
+3V
0V
TTL IN
S1
15V
5V
V+
VL
+3V
TTL
INPUT 0V
S2
50%
50%
≈ +3.5V
D1
D2
IN1
90%
VOUT
(VANALOG + 5V)
10%
0V
IN2
tOFF
tON
0V
RL = 100Ω
GND
90%
VOUT
(VANALOG - 5V)
-15V
10%
≈ -3.5V
NOTE: Only one channel shown. Others act identically.
FIGURE 1B. MEASUREMENT POINTS
FIGURE 1A. TEST CIRCUIT
FIGURE 1. tON AND tOFF
75Ω
VIN
VOUT
75Ω
S1
15V
5V
V+
VL
75Ω
D1
D2
IN1
IN2
S1
VIN
V+
VL
S2
D1
D2
IN1
IN2
OPEN
75Ω
VOUT
+5V
V-
5V
S2
RG-59
COAX
RG-59
COAX
15V
GND
V-
GND
-15V
-15V
V IN = ± 5V ( 10V P-P ) at f = 10MHz
V IN = 225mV RMS at f = 10MHz
V IN
OIRR = 20Log ---------------V OUT
NOTE:
V OUT
CCRR = 20Log ---------------V IN
Only one channel shown. Others act identically.
FIGURE 2. OFF ISOLATION TEST CIRCUIT
FIGURE 3. CROSSTALK TEST CIRCUIT
75Ω
VIN
S1
15V
5V
V+
VL
S2
NC
RG-59
COAX
VOUT
75Ω
RG-59
COAX
+5V
D1
D2
IN1
IN2
V-
75Ω
GND
-15V
RL
ATTN: = 20Log -----------------------------------r DS ( ON ) + R L
Nominally, at DC, ATTN equals -4dB. When the attenuation reaches -1dB, the frequency at which this occurs is f3dB .
NOTE: Only one channel shown. Others act identically.
FIGURE 4. SWITCH ATTENUATION TEST CIRCUIT
4
IH5352
Detailed Description
Figure 5 shows the internal circuit of one channel of the
IH5352. Here, a shunt switch is closed, and the two series
switches are open when the video switch channel is open or
off. This provides much better isolation between the input
and output terminals than a simple series switch does,
especially at high frequencies. The result is excellent offisolation in the Video and RF frequency ranges when
compared to conventional analog switches.
The control input level shifting circuitry is very similar to that
of the IH5140 series of Analog Switches, and gives very high
speed, guaranteed “Break-Before-Make” action, low static
power consumption and TTL compatibility.
SWITCH
SOURCE
(VIDEO INPUT)
LOGIC
CONTROL
INPUT
SWITCH
DRAIN
(VIDEO
OUTPUT)
SHUNT
SWITCH
DRIVER
TRANSLATOR
NOTE: 1 channel of 4 shown.
FIGURE 5. INTERNAL SWITCH CONFIGURATION
Since individual parts are very consistent in their charge
injection, it is possible to replace the potentiometer with a
pair of fixed resistors, and achieve less than 5mV error for
all devices without adjustment.
An alternative arrangement, using a standard TTL inverter to
generate the required inversion, is shown in Figure 7. The
capacitor needs to be increased, and becomes the only method
of adjustment. A fixed value of 22pF is good for analog values
referred to ground, while 35pF is optimum for AC coupled
signals referred to -5V as shown in the figure. The choice of -5V
is based on the virtual disappearance at this analog level of the
transient component of switching charge injection. This
combination will lead to a virtually “glitch-free” switch.
75Ω
15V
1µF
VOUT
5V
S1
ANALOG
INPUT
Typical Applications
V+
VL
S2
D1
D2
IN1
IN2
V-
GND
-15V
1kΩ CERMET
NOT WIRE
WOUND (NOTE)
75Ω
Charge Compensation Techniques
Charge injection results from the signals out of the level
translation circuit being coupled through the gate-channel
and gate-source/drain capacitances to the switch inputs and
outputs. This feedthrough is particularly troublesome in
Sample-and-Hold or Track-and-Hold applications, as it
causes a Sample (Track) to Hold offset. The IH5352 has a
typical injected charge of 30pC-50pC (corresponding to
30mV-50mV on a 1000pF capacitor), at VS-D of about 0V.
This Sample (Track) to Hold offset can be compensated by
bringing in a signal equal in magnitude but of the opposite
polarity. The circuit of Figure 6 accomplishes this charge
injection compensation by using one side of the device as a
S & H (T & H) switch, and the other side as a generator of a
compensating signal. The 1kΩ potentiometer allows the user
to adjust the net injected charge to exactly zero for any
analog voltage in the -5V to +5V range.
5
10pF
CHOLD
1000pF
+3V
0V
TTL IN (STROBE)
1µF
NOTE: Adjust pot for 0mVP-P step at VOUT with no analog (AC)
signal present.
FIGURE 6. CHARGE INJECTION COMPENSATION
IH5352
VOUT
DC BIAS
VOLTAGE
= -5V
ANALOG
INPUT
S1
15V
5V
V+
VL
75Ω
D1
D2
IN1
IN2
22pF-35pF
1
14
2
13
3
12
4
1µF
V-
CHOLD
1000pF
S2
GND
SN7400
+5V
11
5
10
6
9
7
8
-15V
+3V
0V
TTL CONTROL IN
≈ +4V
0V
FIGURE 7. ALTERNATIVE COMPENSATION CIRCUIT
Overvoltage Protection
15V
If sustained operation with no supplies but with analog
signals applied is possible, it is recommended that diodes
(such as 1N914) be inserted in series with the supply lines to
the IH5352. Such conditions can occur if these signals come
from a separate power supply or another location, for
example. The diodes will be reverse biased under this type
of operation, preventing heavy currents from flowing from the
analog source through the IH5352.
The same method of protection will provide over ±25V
overvoltage protection on the analog inputs when the
supplies are present. The schematic for this connection is
shown in Figure 8.
1N914
5V
1µF
S1
V+
VL
S2
D1
D2
IN1
IN2
V-
GND
1N914
-15V
1µF
FIGURE 8. OVERVOLTAGE PROTECTION
6
IH5352
Typical Performance Curves
180
70
PIN 3 = PIN10 = +5V
PIN 7 = -5V, TA = 25oC
PIN 3 = +15V, PIN 7 = -15V
PIN 10 = +5V, TA = 25oC
160
rDS(ON) (Ω)
rDS(ON) (Ω)
60
50
140
120
40
100
30
-15
-10
-5
0
5
10
80
15
-5
ANALOG INPUT VOLTAGE (V)
FIGURE 9. rDS(ON) vs ANALOG INPUT VOLTAGE WITH ±15V
POWER SUPPLIES
-100
TA = 25oC
90
-90
80
-80
70
60
50
TA = 25oC
-70
-60
-50
-40
40
30
0.1
5
FIGURE 10. rDS(ON) vs ANALOG INPUT LEVEL WITH ±5V
POWER SUPPLIES
CROSSTALK (dB)
OFF ISOLATION (dB)
100
0
ANALOG INPUT VOLTAGE (V)
1
10
FREQUENCY (MHz)
-30
0.1
100
FIGURE 11. OFF ISOLATION vs FREQUENCY (SEE FIGURE 2)
-3.3
1
10
FREQUENCY (MHz)
FIGURE 12. CROSSTALK vs FREQUENCY (SEE FIGURE 3)
TA = 25oC
SWITCH ATTENUATION (dB)
-3.4
-3.5
-3.6
-3.7
-3.8
-3.9
-4.0
0.1
1
10
FREQUENCY (MHz)
100
FIGURE 13. SWITCH ATTENUATION vs FREQUENCY (RL = 75Ω, SEE FIGURE 4)
7
100
IH5352
Die Characteristics
DIE DIMENSIONS:
PASSIVATION:
2617µm x 5233µm
Type: PSG/Nitride
PSG Thickness: 7kÅ ±1.4kÅ
Nitride Thickness: 8kÅ ±1.2kÅ
METALLIZATION:
Type: Al
Thickness: 10kÅ ±1kÅ
WORST CASE CURRENT DENSITY:
9.1 x 104 A/cm2
Metallization Mask Layout
IH5352
S1
IN1
D1
V+
(SUBSTRATE)
IN2
D2
S2
GND
IN3
D3
S3
V-
IN4
D4
S4
VL
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reliable. However, no responsibility is assumed by Intersil or its subsidiaries for its use; nor for any infringements of patents or other rights of third parties which may result
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