UNISONIC TECHNOLOGIES CO., LTD 88NXX CMOS IC BUILT-IN DELAY CIRCUIT HIGH-PRECISION VOLTAGE DETECTOR DESCRIPTION The UTC 88NXX is a high-precision voltage detector developed basing on CMOS technology. The detection voltage is fixed internally. A time delayed reset can be accomplished with an external capacitor. N-ch open-drain output form is available. The UTC 88NXX is generally used for power supply monitor of portable equipment such as notebook PCs, digital still cameras, PDAs, and mobile phones, constant voltage power monitor of cameras, video equipment and communication equipment, and power monitor or reset of CPUs and microcomputers. FEATURES * Extremely Low Current Dissipation : 1.2μA Typ. (Detection Voltage ≥ 1.5 V @ VDD=3.5 V) * ±2.0 % Accuracy Detection Voltage * Hysteresis Characteristics: 5% TYP * Detection Voltage varies from 1.5V to 6.0V with 0.1V step * Output Forms: N-ch open-drain output (when it is in Active-Low) ORDERING INFORMATION Ordering Number Lead Free Halogen Free 88NXXL-AD4-R 88NXXG-AD4-R 88NXXG-AF5-R Note: XX: Output Voltage, refer to Marking Information. www.unisonic.com.tw Copyright © 2014 Unisonic Technologies Co., Ltd Package Packing SOT-143 SOT-25 Tape Reel Tape Reel 1 of 8 QW-R502-368.G 88NXX CMOS IC MARKING INFORMATION PACKAGE SOT-143 SOT-25 VOLTAGE CODE 14: 18: 21: 24: 27: 28: 29: 30: 33: MARKING 1.4V 1.8V 2.1V 2.4V 2.7V 2.8V 2.9V 3.0V 3.3V 5 MXXG 1 2 Voltage Code 3 PIN CONFIGURATION VOUT 4 CD 3 1 2 VSS VDD For SOT-25 4 For SOT-143 PIN DESCRIPTION PIN NO PIN NAME DESCRIPTION SOT-143 SOT-25 4 1 VOUT Voltage Detection Output Pin 2 2 VDD Voltage Input Pin 1 3 VSS GND Pin 4 NC No Connection (Note) 3 5 CD Connection Pin For Delay Capacitor Note: The NC pin is electrically open and can be connected to VDD or VSS. UNISONIC TECHNOLOGIES CO., LTD www.unisonic.com.tw 2 of 8 QW-R502-368.G 88NXX CMOS IC BLOCK DIAGRAM VDD + - Delay circuit VOUT VREF VSS CD UNISONIC TECHNOLOGIES CO., LTD www.unisonic.com.tw 3 of 8 QW-R502-368.G 88NXX CMOS IC ABSOLUTE MAXIMUM RATING (TA=25°C, unless otherwise specified) PARAMETER Power Supply Voltage CD pin Input Voltage Output Voltage Output Current RATINGS UNIT 12 V VSS -0.3 ~ VDD+0.3 V VSS -0.3 ~ VSS +12 V 50 mA SOT-143 150 mW Power Dissipation PD SOT-25 250 mW Operating Temperature TOPR -40 ~ +85 °C Storage Temperature TSTG -40 ~ +125 °C Note: Absolute maximum ratings are those values beyond which the device could be permanently damaged. Absolute maximum ratings are stress ratings only and functional device operation is not implied. SYMBOL VDD - VSS VCD VOUT IOUT ELECTRICAL CHARACTERISTICS (TA=25°C unless otherwise specified) Detection Voltage: 1.4V SYMBOL TEST CIRCUIT Detection Voltage (Note 1) -VDET 1 Hysteresis Width VHYS 1 Current Consumption Operating Voltage ISS VDD 2 1 Output Current IOUT 3 Leakage Current ILEAK 3 PARAMETER ∆ - VDET Detection Voltage Temperature ∆ Ta × - VDET Coefficient (Note 2) Delay Time tD TEST CONDITIONS MIN TYP -VDET(S) -VDET(S) ×0.98 -VDET -VDET ×0.02 ×0.05 VDD= 2.0V 0.95 Output transistor Nch, VDS=0.5V,VDD=0.95V Output transistor Nch, VDS=10V, VDD=10V 1 TA=-40°C ~ +85°C 4 VDD= 2V, CD=4.7 nF 0.23 MAX -VDET(S) ×1.02 -VDET ×0.08 2.5 10.0 0.64 20 V V μA V mA 0.1 ±100 UNIT μA ±350 ppm/°C 42 ms MAX UNIT Detection Voltage: 1.8V SYMBOL TEST CIRCUIT Detection Voltage (Note 1) -VDET 1 Hysteresis Width VHYS 1 Current Consumption Operating Voltage ISS VDD 2 1 Output Current IOUT 3 Leakage Current ILEAK 3 PARAMETER ∆ - VDET Detection Voltage Temperature ∆Ta × - VDET Coefficient (Note 2) Delay Time tD MIN TYP -VDET(S) -VDET(S) ×0.98 -VDET -VDET ×0.02 ×0.05 VDD=3.5V 0.95 Output transistor Nch, VDS=0.5V,VDD=1.2V Output transistor Nch, VDS=10V, VDD=10V 1 TA=-40°C ~ +85°C 4 VDD=3.5V, CD=4.7 nF UNISONIC TECHNOLOGIES CO., LTD www.unisonic.com.tw TEST CONDITIONS 0.59 -VDET(S) ×1.02 -VDET ×0.08 2.8 10.0 1.36 20 V μA V mA 0.1 ±100 V μA ±350 ppm/°C 42 ms 4 of 8 QW-R502-368.G 88NXX CMOS IC ELECTRICAL CHARACTERISTICS(Cont.) (TA=25°C unless otherwise specified) Detection Voltage: 2.1V SYMBOL TEST CIRCUIT Detection Voltage (Note 1) -VDET 1 Hysteresis Width VHYS 1 Current Consumption Operating Voltage ISS VDD 2 1 Output Current IOUT 3 Leakage Current ILEAK 3 PARAMETER ∆ - VDET Detection Voltage Temperature ∆Ta × - VDET Coefficient (Note 2) Delay Time tD TEST CONDITIONS MIN TYP -VDET(S) -VDET(S) ×0.98 -VDET -VDET ×0.02 ×0.05 VDD=3.5 V 0.95 Output transistor Nch, VDS=0.5V, VDD=1.2V Output transistor Nch, VDS=10V, VDD=10V 1 TA=-40°C ~ +85°C 4 VDD=3.5V, CD=4.7 nF 0.59 MAX -VDET(S) ×1.02 -VDET ×0.08 5 10.0 1.36 20 V V μA V mA 0.1 ±100 UNIT μA ±350 ppm/°C 42 ms MAX UNIT Detection Voltage: 2.4V SYMBOL TEST CIRCUIT Detection Voltage (Note 1) -VDET 1 Hysteresis Width VHYS 1 Current Consumption Operating Voltage ISS VDD 2 1 PARAMETER Output Current IOUT 3 Leakage Current ILEAK 3 Detection Voltage Temperature Coefficient (Note 2) Delay Time ∆ - VDET ∆Ta × - VDET tD TEST CONDITIONS MIN TYP -VDET(S) -VDET(S) ×0.98 -VDET -VDET ×0.02 ×0.05 VDD=3.5V 0.95 Output transistor Nch, VDS=0.5V, VDD=1.2V Output transistor Nch, VDS=10V, VDD=10V 1 TA=-40°C ~ +85°C 4 VDD=3.5V, CD=4.7 nF 0.59 -VDET(S) ×1.02 -VDET ×0.08 5 10.0 1.36 20 V μA V mA 0.1 ±100 V μA ±350 ppm/°C 42 ms MAX UNIT Detection Voltage: 2.7V SYMBOL TEST CIRCUIT Detection Voltage (Note 1) -VDET 1 Hysteresis Width VHYS 1 Current Consumption Operating Voltage ISS VDD 2 1 Output Current IOUT 3 Leakage Current ILEAK 3 PARAMETER Detection Voltage Temperature Coefficient (Note 2) Delay Time ∆ - VDET ∆Ta × - VDET tD MIN TYP -VDET(S) -VDET(S) ×0.98 -VDET -VDET ×0.02 ×0.05 VDD=4.5V 0.95 Output transistor Nch, VDS=0.5V, VDD=2.4V Output transistor Nch, VDS=10V, VDD=10V 1 TA=-40°C ~ +85°C 4 VDD=4.5V, CD=4.7 nF UNISONIC TECHNOLOGIES CO., LTD www.unisonic.com.tw TEST CONDITIONS 2.88 -VDET(S) ×1.02 -VDET ×0.08 5 10.0 4.98 12 V μA V mA 0.1 ±100 V μA ±350 ppm/°C 34 ms 5 of 8 QW-R502-368.G 88NXX CMOS IC ELECTRICAL CHARACTERISTICS(Cont.) (TA=25°C unless otherwise specified) Detection Voltage: 2.8V SYMBOL TEST CIRCUIT Detection Voltage (Note 1) -VDET 1 Hysteresis Width VHYS 1 Current Consumption Operating Voltage ISS VDD 2 1 Output Current IOUT 3 Leakage Current ILEAK 3 PARAMETER Detection Voltage Temperature Coefficient (Note 2) Delay Time ∆ - VDET ∆Ta × - VDET tD TEST CONDITIONS MIN TYP -VDET(S) -VDET(S) ×0.98 -VDET -VDET ×0.02 ×0.05 VDD=4.5V 0.95 Output transistor Nch, VDS=0.5V, VDD=2.4V Output transistor Nch, VDS=10V, VDD=10V 1 TA=-40°C ~ +85°C 4 VDD=4.5V, CD=4.7 nF 2.88 MAX -VDET(S) ×1.02 -VDET ×0.08 5 10.0 4.98 12 V V μA V mA 0.1 ±100 UNIT μA ±350 ppm/°C 34 ms MAX UNIT Detection Voltage: 2.9V SYMBOL TEST CIRCUIT Detection Voltage (Note 1) -VDET 1 Hysteresis Width VHYS 1 Current Consumption Operating Voltage ISS VDD 2 1 PARAMETER Output Current IOUT 3 Leakage Current ILEAK 3 Detection Voltage Temperature Coefficient (Note 2) Delay Time ∆ - VDET ∆Ta × - VDET tD TEST CONDITIONS MIN TYP -VDET(S) -VDET(S) ×0.98 -VDET -VDET ×0.02 ×0.05 VDD=4.5 V 0.95 Output transistor Nch, VDS=0.5V, VDD=2.4V Output transistor Nch, VDS=10V, VDD=10V 1 TA=-40°C ~ +85°C 4 VDD=4.5V, CD=4.7 nF 2.88 -VDET(S) ×1.02 -VDET ×0.08 5 10.0 4.98 12 V μA V mA 0.1 ±100 V μA ±350 ppm/°C 34 ms MAX UNIT Detection Voltage: 3.0V SYMBOL TEST CIRCUIT Detection Voltage (Note 1) -VDET 1 Hysteresis Width VHYS 1 Current Consumption Operating Voltage ISS VDD 2 1 Output Current IOUT 3 Leakage Current ILEAK 3 PARAMETER Detection Voltage Temperature Coefficient (Note 2) Delay Time ∆ - VDET ∆Ta × - VDET tD MIN TYP -VDET(S) -VDET(S) ×0.98 -VDET -VDET ×0.02 ×0.05 VDD=4.5 V 0.95 Output transistor Nch, VDS=0.5V, VDD=2.4V Output transistor Nch, VDS=10V, VDD=10V 1 TA=-40°C ~ +85°C 4 VDD=4.5V, CD=4.7 nF UNISONIC TECHNOLOGIES CO., LTD www.unisonic.com.tw TEST CONDITIONS 2.88 -VDET(S) ×1.02 -VDET ×0.08 5 10.0 4.98 12 V μA V mA 0.1 ±100 V μA ±350 ppm/°C 34 ms 6 of 8 QW-R502-368.G 88NXX CMOS IC ELECTRICAL CHARACTERISTICS(Cont.) (TA=25°C unless otherwise specified) Detection Voltage: 3.3V SYMBOL TEST CIRCUIT Detection Voltage (Note 1) -VDET 1 Hysteresis Width VHYS 1 Current Consumption Operating Voltage ISS VDD 2 1 Output Current IOUT 3 Leakage Current ILEAK 3 PARAMETER TEST CONDITIONS MIN TYP -VDET(S) -VDET(S) ×0.98 -VDET -VDET ×0.02 ×0.05 VDD=4.5V 0.95 Output transistor Nch, VDS=0.5V, VDD=2.4V Output transistor Nch, VDS=10V, VDD=10V 2.88 MAX -VDET(S) ×1.02 -VDET ×0.08 5 10.0 4.98 UNIT V V μA V mA 0.1 μA ∆ - VDET Detection Voltage Temperature 1 TA=-40°C ~ +85°C ±100 ±350 ppm/°C ∆Ta × - VDET Coefficient (Note 2) Delay Time tD 4 VDD=4.5V, CD=4.7 nF 12 34 ms -VDET: Actual detection voltage Note: 1. -VDET(S): Specified detection voltage 2. The temperature change ratio in the detection voltage [mV/°C] is calculated by using the following equation: -VDET -V DET [m V / C] (1) -VDET (T yp.)[V ]( 2 ) [ppm / C]( 3 ) 1000 T A T A -VDET (1) Temperature change ratio of the detection voltage (2) Specified detection voltage (3) Detection voltage temperature coefficient UNISONIC TECHNOLOGIES CO., LTD www.unisonic.com.tw 7 of 8 QW-R502-368.G 88NXX CMOS IC TEST CIRCUITS 100kΩ VDD VDD V 88NXX Series VSS VOUT CD V Fig.1 Fig.2 VDD VDD VDD V 88NXX Series VSS VOUT CD A V Fig.3 P.P. VDS 88NXX Series 100kΩ VOUT Oscilloscope VSS CD Fig.4 UTC assumes no responsibility for equipment failures that result from using products at values that exceed, even momentarily, rated values (such as maximum ratings, operating condition ranges, or other parameters) listed in products specifications of any and all UTC products described or contained herein. UTC products are not designed for use in life support appliances, devices or systems where malfunction of these products can be reasonably expected to result in personal injury. Reproduction in whole or in part is prohibited without the prior written consent of the copyright owner. The information presented in this document does not form part of any quotation or contract, is believed to be accurate and reliable and may be changed without notice. UNISONIC TECHNOLOGIES CO., LTD www.unisonic.com.tw 8 of 8 QW-R502-368.G