UNISONIC TECHNOLOGIES CO., LTD UT4101 Power MOSFET P-CHANNEL ENHANCEMENT MODE DESCRIPTION The UTC UT4101 is P-channel enhancement mode Power MOSFET, designed with high density cell, with fast switching speed, low on-resistance, excellent thermal and electrical capabilities and operation with low gate voltages. This device is suitable for use as a load switch or in PWM applications. SYMBOL 3.Drain 2.Gate 1.Source ORDERING INFORMATION Ordering Number Note: UT4101G-AE2-R UT4101G-AE3-R Pin Assignment: G: Gate D: Drain Package SOT-23-3 SOT-23 Pin Assignment 1 2 3 S G D S G D Packing Tape Reel Tape Reel S: Source MARKING www.unisonic.com.tw Copyright © 2015 Unisonic Technologies Co., Ltd 1 of 5 QW-R502-164.D UT4101 Power MOSFET ABSOLUTE MAXIMUM RATINGS (TJ = 25°C, unless otherwise specified) PARAMETER SYMBOL RATING UNITS Drain-Source Voltage VDS -20 V Gate-Source Voltage VGS ±8.0 V Continuous Drain Current (Note 3) ID -2.4 A Pulsed Drain Current (Note 1, 2) IDM -7.5 A Power Dissipation PD 1.25 W Junction Temperature TJ +150 °C Storage Temperature TSTG -55 ~ +150 °C Note: Absolute maximum ratings are those values beyond which the device could be permanently damaged. Absolute maximum ratings are stress ratings only and functional device operation is not implied. THERMAL DATA PARAMETER Junction-to-Ambient SYMBOL θJA RATING 100 UNIT °C/W ELECTRICAL CHARACTERISTICS (TA =25°C, unless otherwise specified) PARAMETER OFF CHARACTERISTICS Drain-Source Breakdown Voltage Drain-Source Leakage Current Gate-Source Leakage Current ON CHARACTERISTICS Gate Threshold Voltage Drain-Source On-State Resistance (Note 2) DYNAMIC PARAMETERS Input Capacitance Output Capacitance Reverse Transfer Capacitance SWITCHING PARAMETERS Turn-ON Delay Time Turn-ON Rise Time Turn-OFF Delay Time Turn-OFF Fall-Time Gate Charge SYMBOL TEST CONDITIONS BVDSS IDSS IGSS VGS =0 V, ID =-250µA VDS =-16 V, VGS =0 V VDS =0 V, VGS = ±8.0 V -20 VGS(TH) VDS =VGS, ID =-250 µA VGS =-4.5 V, ID =-1.6 A VGS =-2.5 V, ID =-1.3 A VGS =-1.8 V, ID =-0.9 A -0.40 RDS(ON) TYP -0.72 70 90 112 MAX UNIT -1.0 ±100 V µA nA -1.5 85 120 210 V mΩ mΩ mΩ CISS COSS CRSS VDS =-10 V, VGS =0V, f=1MHz 675 100 75 pF pF pF tD(ON) tR tD(OFF) tF VGS=-4.5V,VDS=-10V,RG =6.0 Ω, ID =-1.6A 7.5 12.6 30.2 21.0 ns ns ns ns VDS=-10 V, VGS =-4.5 V, ID =-1.6A 7.5 QG Gate Source Charge QGS VDS=-10 V, ID =-1.6A Gate Drain Charge QGD SOURCE- DRAIN DIODE RATINGS AND CHARACTERISTICS Drain-Source Diode Forward Voltage(Note2) VSD VGS=0V, IS=-2.4 A Maximum Continuous Drain-Source Diode IS Forward Current VGS=0V, dISD/dt=100A/μs, Reverse Recovery Time tRR IS =-1.6A Reverse Recovery Charge QRR Notes: 1. Pulse width limited by TJ(MAX) 2. Pulse width ≤300us, duty cycle ≤2%. 3. Surface mounted on 1 in2 copper pad of FR4 board. UNISONIC TECHNOLOGIES CO., LTD www.unisonic.com.tw MIN 8.5 1.2 2.2 -0.82 12.8 1008 nC nC nC -1.2 V -2.4 A 15 ns nC 2 of 4 QW-R502-164.D Drain to Source OnResistance,RDS(ON) (mΩ) Drain to Source OnResistance,RDS(ON) (mΩ) Drain Current,-ID (A) Drain Current,-ID (A) Leakage,-IDSS (nA) Drain-to-Source Resistance (Normalized),RDS(ON) UT4101 UNISONIC TECHNOLOGIES CO., LTD www.unisonic.com.tw Power MOSFET TYPICAL CHARACTERISTICS QW-R502-164.D 3 of 4 UT4101 Time,t (ns) Source Current,-IS (A) Drain-to-Source Voltage,-VDS (V) Gate-to-Source Voltage,-VGS (V) TYPICAL CHARACTERISTICS(Cont.) Capacitance,C (pF) Power MOSFET UTC assumes no responsibility for equipment failures that result from using products at values that exceed, even momentarily, rated values (such as maximum ratings, operating condition ranges, or other parameters) listed in products specifications of any and all UTC products described or contained herein. UTC products are not designed for use in life support appliances, devices or systems where malfunction of these products can be reasonably expected to result in personal injury. Reproduction in whole or in part is prohibited without the prior written consent of the copyright owner. The information presented in this document does not form part of any quotation or contract, is believed to be accurate and reliable and may be changed without notice. UNISONIC TECHNOLOGIES CO., LTD www.unisonic.com.tw 4 of 4 QW-R502-164.D