SiP2800, SiP2801, SiP2802, SiP2803, SiP2804, SiP2805 Vishay Siliconix Low Power Consumption Current Mode Controller DESCRIPTION FEATURES The SiP280X family includes six high-speed, low power consumption, BiCMOS Current Mode Controllers. These integrated circuits contain all of the control and drive functions required for off-line and DC/DC current-mode switching power supplies. Their advanced architecture enables the implementation of full-featured designs with minimal external parts count. • Pin-for-pin compatible with UCC280X controllers • Enhanced performance UC284X for new designs • 100 µA typical start-up current • 500 µA typical operating current • Internal soft start at power-on and after fault • 100 ns internal leading edge blanking • Compliant to RoHS Directive 2002/95/EC The SiP280X family controllers is available in lead (Pb)-free, SO-8 packages, and are rated for operation over the industrial temperature range of - 40 °C to 85 °C. APPLICATIONS • • • • • Efficiency-enhanced DC/DC converter modules Low quiescent current standby power supplies Offline (AC/DC) power supplies Universal input power supplies Buck, boost, and buck-boost converters Part Number Maximum Duty Cycle Reference Voltage Turn-On Threshold SiP2800 100 % 5V 7.2 V Turn-Off Threshold 6.9 V SiP2801 50 % 5V 9.4 V 7.4 V SiP2802 100 % 5V 12.5 V 8.3 V SiP2803 100 % 4V 4.1 V 3.6 V SiP2804 50 % 5V 12.5 V 8.3 V SiP2805 50 % 4V 4.1 V 3.6 V TYPICAL APPLICATION CIRCUIT + 48 V + + 12 V/3 A + FB VCC COMP SiP2801 RC OUT CS REF GND GND Flyback Converter for Point of Load Application * Pb containing terminations are not RoHS compliant, exemptions may apply. Document Number: 72660 S11-0598-Rev. E, 25-Apr-11 www.vishay.com 1 This datasheet is subject to change without notice. THE PRODUCT DESCRIBED HEREIN AND THIS DOCUMENT ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000 SiP2800, SiP2801, SiP2802, SiP2803, SiP2804, SiP2805 Vishay Siliconix ABSOLUTE MAXIMUM RATINGSa Parameter Limit VCCb Unit 12 FB, Comp, CS V - 0.3 to 6 Power Dissipation SO-8 Power Dissipation TSSOP-8 Storage Temperature 1 W 830 mW - 55 to 150 °C Notes: a. Currents are positive into, negative out of the specificed terminal. b. In normal operation VCC is powered through a current limiting resistor. An absolute maximum of 12 V applies when VCC is driven from a low impedance source such that ICC does not exceed 30 mA. Stresses beyond those listed under “Absolute Maximum Ratings” may cause permanent damage to the device. These are stress ratings only, and functional operation of the device at these or any other conditions beyond those indicated in the operational sections of the specifications is not implied. Exposure to absolute maximum rating conditions for extended periods may affect device reliability. RECOMMENDED OPERATING RANGE Parameter Operating Temperature Range Limit Unit - 40 to 85 °C SPECIFICATIONS Parameter Symbol Test Conditions Unless Specified VCC = 10 V, RT = 100 k., CT = 330 pF CREF = 0.1 µF, - 40 °C < TA < 85 °C Limits Min.a Typ.b Max.a SiP2800 / SiP2801 / SiP2802 / SiP2804 4.925 5.000 5.075 SiP2803 / SiP2805 3.940 4.000 4.06 SiP2800 / SiP2801 / SiP2802 / SiP2804 4.88 5.00 5.10 SiP2803 / SiP2805 3.90 4.00 4.08 10 30 Unit Reference ILOAD = 0.2 mA, TA = 25 °C Reference Voltage VREF Load Regulation VLOAD Line Regulation VLINE Noise VNOISE Short Circuit Current ISC V 0.2 mA < ILOAD < 5 mA VCC = 10 V to Clamp, TA = 25 °C 1.9 VCC = 10 V to Clamp 2.5 10 Hz < f < 10 kHz, TA = 25 °C 130 -5 mV mV/V µV - 35 mA Oscillator Frequency fOSC SiP2800 / SiP2801 / SiP2802 / SiP2804 40 SiP2803 / SiP2805 26 31 2.25 2.40 Peak Voltage www.vishay.com 2 52 kHz Temperature Stability Amplitude 46 36 2.5 VP-P VP 2.45 % 2.55 V Document Number: 72660 S11-0598-Rev. E, 25-Apr-11 This datasheet is subject to change without notice. THE PRODUCT DESCRIBED HEREIN AND THIS DOCUMENT ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000 SiP2800, SiP2801, SiP2802, SiP2803, SiP2804, SiP2805 Vishay Siliconix SPECIFICATIONS Parameter Symbol Test Conditions Unless Specified VCC = 10 V, RT = 100 k., CT = 330 pF CREF = 0.1 µF, - 40 °C < TA < 85 °C Limits Min.a Typ.b Max.a SiP2800 / SiP2801 / SiP2802 / SiP2804 2.44 2.50 2.56 SiP2803 / SiP2805 1.95 Unit Error Amplifier COMP = 2.5 V Input Voltage VIN COMP = 2.0 V Input Bias Current Open Loop Gain COMP Sink Current COMP Source Current Gain Bandwidth IBIAS1 V 2.00 -1 AV 60 ISINK FB = 2.7 V, COMP = 1.1 V 0.3 ISOURCE FB = 1.8 V, COMP = VREF - 1.2 V - 0.2 BW 2.05 1 80 dB 3.5 - 0.5 µA - 0.8 2 mA MHz SPECIFICATIONS Parameter Symbol Test Conditions Unless Specified VCC = 10 V, RT = 100 k., CT = 330 pF CREF = 0.1 µF, - 40 °C < TA < 85 °C Limits Min.a Typ.b Max.a SiP2800 / SiP2802 / SiP2803 97 99 100 SiP2801 / SiP2804 / SiP2805 48 49 50 Unit PWM and Overcurrent Comparator Maximum Duty Cycle DMAX % DMIN COMP = 0 V AV 0 < VCS < 0.8 V 1.2 1.65 1.9 V/V Max. Input Signal VIMAX COMP = 5 V 0.9 1.0 1.1 V Input Bias Current 2 IBIAS2 200 nA 0.45 0.90 1.35 V 50 100 150 ns Minimum Duty Cycle Gain c COMP to CS Offset 0 - 200 CS = 0 V CS Pin Blanking Time Overcurrent Comparator Fault Threshold 1.47 1.73 Output I = 20 mA 0.1 0.40 0.35 0.90 I = 50 mA, VCC = 5 V SiP2803 / SiP2805 0.15 0.40 I = 20 mA, VCC = 0 V All Parts 0.70 1.20 0.15 0.40 1.00 1.90 0.40 0.90 41 70 44 75 I = 200 mA VOL Output Voltage I = - 20 mA VCC - VOH I = - 200 mA I = - 50 mA, VCC = 5 V Rise Time tr Fall Time tf Document Number: 72660 S11-0598-Rev. E, 25-Apr-11 CL = 1 nF All Parts All Parts SiP2803 / SiP2805 V ns www.vishay.com 3 This datasheet is subject to change without notice. THE PRODUCT DESCRIBED HEREIN AND THIS DOCUMENT ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000 SiP2800, SiP2801, SiP2802, SiP2803, SiP2804, SiP2805 Vishay Siliconix SPECIFICATIONS Parameter Symbol Test Conditions Unless Specified VCC = 10 V, RT = 100 k., CT = 330 pF CREF = 0.1 µF, - 40 °C < TA < 85 °C Limits Min.a Typ.b Max.a SiP2800 6.6 7.2 7.8 SiP2801 8.6 9.4 10.2 SiP2802 / SiP2804 11.5 12.5 13.5 SiP2803 / SiP2805 3.7 4.1 4.5 SiP2800 6.3 6.9 7.5 SiP2801 6.8 7.4 8.0 SiP2802 / SiP2804 7.6 8.3 9.0 SiP2803 / SiP2805 3.2 3.6 4.0 SiP2800 0.05 0.30 0.48 SiP2801 1.5 2.0 2.4 SiP2802 / SiP2804 3.0 4.2 5.1 SiP2803 / SiP2805 0.2 0.5 0.8 4 10 Unit Undervoltage Lockout Start Thresholdd VSTART Stop Thresholdd VSTOP Start to Stop Hysteresis VHYS V Soft-Start COMP Rise Time SS FB = 1.8 V, Rise from 0.5 V to VREF - 1 V ms Overall ISTART VCC < Start Threshold 0.1 0.2 Operating Supply Current ICC FB = 0 V, CS = 0 V 0.5 1.0 VCC Internal Zener Voltaged VZ ICC = 10 mA 12.0 13.5 15.0 0.5 1.0 Start-up Current VCC Internal Zener Voltage Minus d Start Threshold Voltage VZ - VSTART SiP2802 / SiP28004 mA V Notes: a. The algebraic convention whereby the most negative value is a minimum and the most positive a maximum (- 40 °C to 85 °C). b. Typical values are for DESIGN AID ONLY, not guaranteed nor subject to production testing and are measured at VCC = 12 V unless otherwise noted. c. Gain is defined by A = DVCOMP/DVCS, 0 V VCS 0.8 V. d. Start, Stop, and Zener voltages track each other. www.vishay.com 4 Document Number: 72660 S11-0598-Rev. E, 25-Apr-11 This datasheet is subject to change without notice. THE PRODUCT DESCRIBED HEREIN AND THIS DOCUMENT ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000 SiP2800, SiP2801, SiP2802, SiP2803, SiP2804, SiP2805 Vishay Siliconix TYPICAL CHARACTERISTICS 1000 Oscillator Frequency (kHz) Oscillator Frequency (kHz) 1000 100 Ct = 100 pF Ct = 200 pF 100 Ct = 100 pF Ct = 200 pF Ct = 330 pF Ct = 1000 pF 10 10 100 Ct = 330 pF Ct = 1000 pF 10 1000 10 100 Rt (kΩ) SiP2800 / SiP2801 / SiP2802 / SiP2804 Oscillator Frequency vs. Rt and Ct SiP2803 / SiP2805 Oscillator Frequency vs. Rt and Ct 500 450 1.3 Rt = 100 kΩ CS = 0 V 1.2 COMP to CS Offset (V) 400 350 Dead Time (nS) 1000 Rt (kΩ) 300 SiP2803/05 250 200 SiP2800/01/02/04 150 100 1.1 1.0 0.9 0.8 50 0 100 200 300 400 500 600 700 800 0.7 - 50 900 1000 - 25 0 25 50 75 100 125 150 Ct (pf) Temperature (°C) Oscillator Dead Time vs. Ct COMP to CS Offset Voltage vs. Temperature 80 70 60 135 50 90 30 Gain 20 45 Phase (° ) Gain (dB) Phase 40 10 0 0 - 10 - 20 - 45 - 30 1 10 100 1000 10000 Frequency (kHz) Error Amplifier Gain and Phase vs. Frequency Document Number: 72660 S11-0598-Rev. E, 25-Apr-11 www.vishay.com 5 This datasheet is subject to change without notice. THE PRODUCT DESCRIBED HEREIN AND THIS DOCUMENT ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000 SiP2800, SiP2801, SiP2802, SiP2803, SiP2804, SiP2805 Vishay Siliconix PIN CONFIGURATION ORDERING INFORMATION SOIC-8 SOIC-8 Part Number Lead (Pb)-free Part Number Marking COMP 1 8 REF SiP2800DY-T1 SiP2800DY-T1-E3 2800 FB 2 7 VCC SiP2801DY-T1 SiP2801DY-T1-E3 2801 OUT SiP2802DY-T1 SiP2802DY-T1-E3 2802 GND SiP2803DY-T1 SiP2803DY-T1-E3 2803 SiP2804DY-T1 SiP2804DY-T1-E3 2804 SiP2805DY-T1 SiP2805DY-T1-E3 2805 CS RC 3 6 5 4 To p View Temperature - 40 °C to 85 °C Additional voltage options are available. PIN DESCRIPTION Pin Number Name 1 COMP Function 2 FB Inverting input of the Voltage Error Amplifier 3 CS Non-inverting input of the PWM Current Sense Comparator, and inverting input of the Overcurrent Fault Comparator (both comparators are fed from the output of the internal 100 ns Leading Edge Blanking circuit) 4 RC Connection for the PWM Oscillator’s timing resistor and timing capacitor 5 GND Ground Pin 6 OUT PWM Output Signal (capable of driving ± 750 mA into the gate of an external MOSFET power switch) 7 VCC Positive supply voltage for the IC 8 REF IC Reference Voltage Output of the Voltage Error Amplifier, and the inverting input to the PWM’s Current Sense Comparator DETAILED PIN DESCRIPTION COMP COMP is the output of the Voltage Error Amplifier (VEA). The VEA is a low output impedance operational amplifier, providing the input to the PWM cycle-by-cycle current limit comparator. As the SiP280X series of parts use a true operational amplifier for the VEA, the COMP terminal can both source and sink current. To add flexibility to these parts, the VEA is internally current limited, which allows OUT to be forced to zero duty cycle by taking the COMP pin to GND. The voltage on COMP is passed through an internal diode to develop an offset voltage of approximately 0.6 V, and then through a resistive divider with a gain of 0.606 V/V, before being presented to the control input of the cycle-by-cycle current limit comparator. Clamping the COMP pin to less than the diode’s forward voltage (i.e., < 0.5 V) will command the current loop to deliver 0 A, by holding the control input of the cycle-by-cycle current comparator at 0 V. Similarly, the current loop will command the maximum inductor current on each cycle when COMP is at 2.25 V or greater, which drives the control input of the cycle-by-cycle current comparator to 1 V (since [2.25 V - 0.6 V] x 0.606 V/V = 1 V). The SiP280X series additionally features a built-in soft-start function, which functions by clamping the output level of the VEA to an internally generated voltage. This clamp will hold COMP at a low voltage (VCOMP 0 V) until VCC and VREF are at their proper levels. When these levels are appropriate for circuit operation, the internal voltage will begin rising, at the rate of 1 V/ms. This rising clamp level allows the voltage on the COMP pin to rise, which in turn allows the voltage at the www.vishay.com 6 control input of the cycle-by-cycle current comparator to increase. The maximum soft-start interval occurs under conditions requiring full duty cycle (50 % or 100 %, depending upon the part type), and is given by the time required for the voltage on the cycle-by-cycle current comparator’s control input to reach 1 V. Since 1 V at the control input to the comparator requires that the COMP pin be at 2.25 V, the maximum soft-start interval is approximately 2.25 ms. CS Input to both the cycle-by-cycle and overcurrent fault current sense comparators. The cycle-by-cycle current limit comparator is the mechanism by which the VEA’s output voltage commands the level of inductor or transformer current during a given "on" interval, thereby regulating the overall circuit’s output.This comparator forms the inner loop of the two loops used in current-mode regulation. The overcurrent comparator has a trip threshold that is 50 % higher than that of the cycle-by-cycle comparator. Under normal operating conditions, this comparator will not trip: its purpose is to provide enhanced protection of the power path components during severe faults (e.g., a short circuit). If the overcurrent comparator is tripped by a fault condition, it will command the SiP280X to do a "full-cycle restart". During this restart, the power supply will be quickly driven to the "off" state, and will be required to wait for five milliseconds (typical) before restarting. When the supply does restart, it will do so using the built-in soft-start function of the SiP280X. Document Number: 72660 S11-0598-Rev. E, 25-Apr-11 This datasheet is subject to change without notice. THE PRODUCT DESCRIBED HEREIN AND THIS DOCUMENT ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000 SiP2800, SiP2801, SiP2802, SiP2803, SiP2804, SiP2805 Vishay Siliconix The SiP280X family incorporates internal leading-edge blanking on the CS pin, to keep any spurious voltages on the CS pin from reaching the comparator inputs during the 100 ns interval immediately following the rising edge on OUT (for example, voltages due to capacitive charging currents). Because of this internal leading-edge blanking, many applications require no external RC filter on the CS input. Compared to circuits requiring the use of an external RC filter circuit, leading-edge blanking provides a shorter effective CS to OUT propagation delay. FB FB is the inverting input of the VEA. Internally compared against VREF/2 appearing on the VEA’s non-inverting input. To avoid stability problems, keep lead lengths to FB as short as possible, and use good layout practices to minimize the stray capacitances of components connected to this pin. GND The GND pin is both the reference ground and the power ground for this part. OUT OUT is the output of a high-current driver capable of peak currents in excess of ± 750 mA. OUT is therefore well suited to driving the gates of power MOSFETs. This pin is specifically held low when VCC is below the SiP280X’s UVLO threshold, to ensure a predictable system turn-on. Since the OUT pin is internally connected to a low impedance CMOS buffer, it is capable of rapid rail-to-rail transitions. This output topology also mitigates the effects of undershoot and overshoot. For this reason, external Schottky clamp diodes are generally not required on this pin. RC RC is the oscillator frequency programming pin. FOSC is set by the combination of RT and CT. The charging current for CT is provided through RT, which is normally connected between REF and the SiP280X RC pin. CT then connects from RC to GND. Due to the high impedances encountered in low power control circuits, this connection must be a short and quiet return to GND (preferably by means of a dedicated signal trace, separated from all other circuit functions). The oscillator frequency for the SiP280X family of parts is approximated by the following formulas: For the SiP2800, SiP2801, SiP2802, and SiP2804: • FOSC (1.5)/RTCT For the SiP2803 and SiP2805: • FOSC (1.0)/RTCT Here RT is in ohms and CT is in farads. More accurate formulas for FOSC are: For the SiP2800, SiP2801, SiP2802 and SiP2804: • FOSC = 1/{[(CT + CSTRAY) x RT x 0.652] + [(CT + CSTRAY) x RDISCH x 2.53] + TDELAY} For the SiP2803 and SiP2805: Here RT is in ohms and CT is in farads, RDISCH is the value of the resistor through which CT is discharged (normally an on-chip 130 resistor, unless the circuit is configured with additional external discharge-path resistance), and tDELAY is an inherent internal comparator delay time of 100 ns. The capacitance associated with the RC pin is approximately 7.5 pF, and should be included as a part of CSTRAY. Note that the SiP2801, SiP2804, and SiP2805 have an internal toggle flip-flop at the output of the oscillator, to ensure that the output duty cycle never exceeds 50 %. This divides the frequency appearing at the OUT pin to one-half of the oscillator frequency for these three parts. Values of RT below 10 k are not recommended. Low values of RT cause high circuit operating currents, and very low values will prevent the oscillator from properly discharging CT. REF The reference generator block of the Si280X provides an accurate and stable 4.0 V or 5.0 V (depending upon part number), which is available at this pin of the IC. This voltage is also used internally for other functions on the IC. One of these uses is as the logic power supply for high speed switching logic on the IC; this, and stability concerns, make it important to bypass VREF to GND with a good quality 0.1 µF ceramic capacitor, as close to the part as possible. An electrolytic or tantalum capacitor may be used in addition to the ceramic capacitor. When 1 V < VCC < the UVLO threshold, REF is pulled to ground through a 5 k resistor. Hence, REF can also be used as an output to indicate the part’s VCC status. VCC VCC is the positive power connection for the SiP280X controller IC, and should be the most positive terminal on the part. In normal operation, VCC is powered through a current limiting resistor. The required start-up supply current will generally be on the order of 100 µA with VCC below the UVLO voltage of the SiP280X, and can remain at or below 500 µA total supply current once the part starts switching. To prevent the IC from being damaged by overvoltage conditions, each of the SiP2800 family of parts has an internal clamp (effectively a 13.5 V Zener diode) between VCC and GND. If the part’s VCC pin is current-fed through an appropriate dropping resistor, the VCC pin will never exceed its rated voltage, nor will the device as a whole exceed its rated power dissipation. This does require knowing what the operating current of the IC will be, so that the value of the dropping resistor can be calculated. A good estimate of the actual operating current (ICC) may be made by summing three components: (a) (b) (c) Any external current loading on the VCC or REF pins The operating current required by the IC itself, and The drive current (IDRIVE) required by the external power switch. • FOSC = 1/{[(CT + CSTRAY) x RT x 0.93] + [(CT + CSTRAY) x RDISCH x 2.53] + TDELAY} Document Number: 72660 S11-0598-Rev. E, 25-Apr-11 www.vishay.com 7 This datasheet is subject to change without notice. THE PRODUCT DESCRIBED HEREIN AND THIS DOCUMENT ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000 SiP2800, SiP2801, SiP2802, SiP2803, SiP2804, SiP2805 Vishay Siliconix Item (a) in the above list is a static dc value, and can generally be calculated with good accuracy. Item (b) will increase with operating frequency, but will be fixed for a given value of FOSC. Item (c) is usually the dominant term in the calculation of ICC, as the power required to drive the external power switch will typically increase as FOUT is increased. The most common example of this is seen in driving the gate of a power MOSFET. In such applications, the gate capacitances must be charged once each switching cycle. This calculation is simplified by using the gate charge term given by most MOSFET manufacturers, allowing the use of the formula: The resistor limiting the current into the VCC pin should be selected such that ICC(min) equals the worst-case maximum sum of the above currents, while holding ICC(max) to as low a value above that number as practicable (for best overall efficiency), and nevermore than 25 mA above that number (to avoid exceeding the IC’s internal clamp diode ratings). VCC must be bypassed to GND with a good quality 0.1 µF ceramic capacitor, as close to the part as possible. This will help avoid problems created by high-frequency noise on the power supply of the part. An electrolytic or tantalum capacitor may be placed in parallel with the ceramic capacitor if more capacitance is needed or desired. IDRIVE = FOUT x Qg of the chosen MOSFET. A first approximation of the necessary dropping resistor value is then given by: R = [(Nominal VSUPPLY) - 12 V]/(Nominal ICC) Here R is in ohms and ICC is in amperes. FUNCTIONAL BLOCK DIAGRAM VCC Overcurrent Comparator Reference Voltage Leading Edge Blanking - CS + REF SiP2801/4/5 Only 1.5 V UVLO T Q 13.5 V COMP OUT S Q Voltage Error Amplifier - FB REF/2 + - R + PWM Comparator OSC Soft-Start RC GND Vishay Siliconix maintains worldwide manufacturing capability. Products may be manufactured at one of several qualified locations. Reliability data for Silicon Technology and Package Reliability represent a composite of all qualified locations. For related documents such as package/tape drawings, part marking, and reliability data, see www.vishay.com/ppg?72660. www.vishay.com 8 Document Number: 72660 S11-0598-Rev. E, 25-Apr-11 This datasheet is subject to change without notice. THE PRODUCT DESCRIBED HEREIN AND THIS DOCUMENT ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000 SOIC-8 VISHAY Vishay Semiconductors SOIC-8 Package Dimensions in Inches (mm) R .010 (.13) .120± .005 (3.05± .13) .240 (6.10) .154± .005 CL (3.91± .13) .050 (1.27) .014 (.36) .036 (.91) .170 (4.32) .260 (6.6) .016 (.41) Pin One ID .192± .005 (4.88± .13) .004 (.10) .008 (.20) .015± .002 (.38± .05) 40° .008 (.20) 5° max. ISO Method A .050 (1.27) typ. .021 (.53) .020± .004 (.51± .10) 2 plcs. R.010 (.25) max. .045 (1.14) 7° .058± .005 (1.49± .13) .125± .005 (3.18± .13) Lead Coplanarity ±.0015 (.04) max. i178003 Document Number 83247 Rev. 1.2, 07-Apr-04 www.vishay.com 1 SOIC-8 VISHAY Vishay Semiconductors Ozone Depleting Substances Policy Statement It is the policy of Vishay Semiconductor GmbH to 1. Meet all present and future national and international statutory requirements. 2. Regularly and continuously improve the performance of our products, processes, distribution and operatingsystems with respect to their impact on the health and safety of our employees and the public, as well as their impact on the environment. It is particular concern to control or eliminate releases of those substances into the atmosphere which are known as ozone depleting substances (ODSs). The Montreal Protocol (1987) and its London Amendments (1990) intend to severely restrict the use of ODSs and forbid their use within the next ten years. Various national and international initiatives are pressing for an earlier ban on these substances. Vishay Semiconductor GmbH has been able to use its policy of continuous improvements to eliminate the use of ODSs listed in the following documents. 1. Annex A, B and list of transitional substances of the Montreal Protocol and the London Amendments respectively 2. Class I and II ozone depleting substances in the Clean Air Act Amendments of 1990 by the Environmental Protection Agency (EPA) in the USA 3. Council Decision 88/540/EEC and 91/690/EEC Annex A, B and C (transitional substances) respectively. Vishay Semiconductor GmbH can certify that our semiconductors are not manufactured with ozone depleting substances and do not contain such substances. We reserve the right to make changes to improve technical design and may do so without further notice. Parameters can vary in different applications. All operating parameters must be validated for each customer application by the customer. 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We confirm that all the products identified as being compliant to IEC 61249-2-21 conform to JEDEC JS709A standards. Revision: 02-Oct-12 1 Document Number: 91000