VO215AT, VO216AT, VO217AT Vishay Semiconductors Optocoupler, Phototransistor Output, Low Input Current, with Base Connection FEATURES A 1 8 NC • High current transfer ratio K 2 7 B • Isolation test voltage, 4000 VRMS NC 3 6 C • Lead (Pb)-free component NC 4 5 E • Component in accordance to RoHS 2002/95/EC and WEEE 2002/96/EC i179002 DESCRIPTION AGENCY APPROVALS The VO215AT, VO216AT, VO217AT are optically coupled pairs with a Gallium Arsenide infrared LED and a silicon NPN phototransistor. Signal information, including a DC level, can be transmitted by the device while maintaining a high degree of electrical isolation between input and output. The high CTR at low input current is designed for low power consumption requirements such as CMOS microprocessor interfaces. • UL1577, file no. E52744 system code Y • CUL - file no. E52744, equivalent to CSA bulletin 5A • DIN EN 60747-5-5 (VDE 0884) available with option 1 ORDER INFORMATION PART REMARKS VO215AT CTR > 20 %, SOIC-8 VO216AT CTR > 50 %, SOIC-8 VO217AT CTR > 100 %, SOIC-8 ABSOLUTE MAXIMUM RATINGS PARAMETER TEST CONDITION INPUT Peak reverse voltage Peak forward current Forward continuous current Power dissipation Derate linearly from 25 °C OUTPUT Collector emitter breakdown voltage Emitter collector breakdown voltage Collector base breakdown voltage ICmax. DC ICmax. Power dissipation Derate linearly from 25 °C COUPLER Isolation test voltage Total package dissipation Derate linearly from 25 °C Storage temperature Operating temperature Soldering time 1 µs, 300 pps t < 1 ms 1s LED and detector SYMBOL VALUE UNIT VR IFM IF Pdiss 6 1 60 90 1.2 V A mA mW mW/°C BVCEO BVECO BVCBO 30 7 70 50 100 150 2 V V V mA mA mW mW/°C 4000 240 3.2 - 40 to + 150 - 40 to + 100 10 VRMS mW mW/°C °C °C s ICmax. DC ICmax. Pdiss VISO Ptot Tstg Tamb at 260 °C Note Tamb = 25 °C, unless otherwise specified. Stresses in excess of the absolute maximum ratings can cause permanent damage to the device. Functional operation of the device is not implied at these or any other conditions in excess of those given in the operational sections of this document. Exposure to absolute maximum ratings for extended periods of the time can adversely affect reliability. Document Number: 81955 Rev. 1.0, 02-Dec-08 For technical questions, contact: [email protected] www.vishay.com 1 VO215AT, VO216AT, VO217AT Vishay Semiconductors Optocoupler, Phototransistor Output, Low Input Current, with Base Connection ELECTRICAL CHARACTERISTCS PARAMETER TEST CONDITION PART SYMBOL MIN. TYP. MAX. UNIT INPUT Forward voltage IF = 1 mA VF 1 1.5 V Reverse current VR = 6 V IR 0.1 100 µA Capacitance VR = 0 V CO 13 pF OUTPUT Collector emitter breakdown voltage IC = 100 µA BVCEO 30 Emitter collector breakdown voltage IC = 10 µA BVECO 7 V Collector base breakdown voltage IC = 100 µA BVCBO 100 V V Collector base current ICBO 1 Emitter base current IEBO 1 nA 50 nA Dark current collector emitter VCE = 10 V, IF = 0 A Collector emitter capacitance Saturation voltage, collector emitter ICEO 5 VCE = 0 CCE 10 IF =1 mA, IC = 0.1 mA VCEsat nA pF 0.4 V COUPLER Capacitance (input to output) CIO 0.5 pF Note Tamb = 25 °C, unless otherwise specified. Minimum and maximum values were tested requierements. Typical values are characteristics of the device and are the result of engineering evaluations. Typical values are for information only and are not part of the testing requirements. CURRENT TRANSFER RATIO PARAMETER DC current transfer ratio www.vishay.com 2 TEST CONDITION IF = 1 mA, VCE = 5 V PART SYMBOL MIN. TYP. VO215AT CTRDC 20 50 % VO216AT CTRDC 50 80 % VO217AT CTRDC 100 130 % For technical questions, contact: [email protected] MAX. UNIT Document Number: 81955 Rev. 1.0, 02-Dec-08 VO215AT, VO216AT, VO217AT Optocoupler, Phototransistor Output, Low Input Current, with Base Connection Vishay Semiconductors SWITCHING CHARACTERISTICS PARAMETER TEST CONDITION SYMBOL Turn-on time IC = 2 mA, RL = 100 Ω, VCC = 10 V ton 3 µs Turn-off time IC = 2 mA, RL = 100 Ω, VCC = 10 V toff 3 µs Rise time IC = 2 mA, RL = 100 Ω, VCC = 10 V tr 3 µs Fall time IC = 2 mA, RL = 100 Ω, VCC = 10 V tf 2 µs Input MIN. TYP. MAX. UNIT 0 VCC = 5 V ton Input RL VOUT toff trise Output tfall V0 10 % 10 % 50 % 50 % 90 % 90 % iil215at_17 Fig. 1 - Switching Test Circuit COMMON MODE TRANSIENT IMMUNITY TEST CONDITION SYMBOL Common mode transient immunity at logic high PARAMETER VCM = 1000 VP-P, RL = 1 kΩ, IF = 0 mA MIN. TYP. MAX. UNIT |CMH| 5000 V/µs Common mode transient immunity at logic low VCM = 1000 VP-P, RL = 1 kΩ, IF = 10 mA |CML| 5000 V/µs dV = 63 % of VCM B 1 7 RL 1K dV = 63 % of VCM Common mode voltage VCM 6 RF A VO 2, 3, 4 5 5 VDC + - dt dt 0.1 µF VO VB = 4.5 V CMH 2.0 V 2.0 V CML VO VCM 21627 Time 0.8 V 0.8 V Input from HV pulse source 21626 Fig. 2 - Test Circuit for Common Mode Transient Immunity Document Number: 81955 Rev. 1.0, 02-Dec-08 For technical questions, contact: [email protected] www.vishay.com 3 VO215AT, VO216AT, VO217AT Optocoupler, Phototransistor Output, Low Input Current, with Base Connection Vishay Semiconductors SAFETY AND INSULATION RATINGS PARAMETER TEST CONDITION SYMBOL MIN. TYP. Climatic classification (according to IEC 68 part 1) MAX. UNIT 40/100/21 Polution degree 2 Comparative tracking index CTI 175 VISO 4000 Peak transient overvoltage VIOTM 6000 V Peak insulation voltage VIORM 560 V Isolation test voltage 1s 399 VRMS Resistance (input to output) RIO Safety rating - power output PSO 350 mW Safety rating - input current ISI 150 mA Safety rating - temperature TSI 165 °C 100 GΩ External creepage distance 4 External clearance distance 4 mm mm Internal creepage distance 3.3 mm Insulation thickness 0.2 mm Note As per IEC 60747-5-2, §7.4.3.8.1, this optocoupler is suitable for “safe electrical insulation” only within the safety ratings. Compliance with the safety ratings shall be ensured by means of protective circuits. TYPICAL CHARACTERISTICS Tamb = 25 °C, unless otherwise specified 1.5 VF - Forward Voltage (V) 1.3 NCTRCE - Normalized CTRCE 1.4 TA = - 55 °C 1.2 TA = 25 °C 1.1 1.0 0.9 TA = 100 °C 0.8 Normalized to: VCE = 10 V IF = 10 mA 1.0 VCE = 5 V 0.5 VCE = 0.4 V 0.7 0.0 0.1 iil215at_01 1 10 IF - Forward Current (mA) Fig. 3 - Forward Voltage vs. Forward Current www.vishay.com 4 0.1 100 iil215at_02 1 10 100 IF - LED Current (mA) Fig. 4 - Normalized Non-Saturated and Saturated CTRCE vs. LED Current For technical questions, contact: [email protected] Document Number: 81955 Rev. 1.0, 02-Dec-08 VO215AT, VO216AT, VO217AT Optocoupler, Phototransistor Output, Low Input Current, with Base Connection 10 VCE = 5 V 100 50 VCE = 0.4 V 0 0.1 1 10 10 10 10 10 10 5 4 3 2 -1 -2 - 20 0 70 °C 1 1.5 Saturated hFE NhFE(sat) - Normalized 50 °C IF = 1.0 mA 10 20 40 60 80 100 TA - Ambient Temperature (°C) 2.0 Normalized to: Vcb = 9.3 V 0.1 25 °C Normalized to: Ib = 20 µA Vce = 10 V 1.0 Vce = 0.4 V 0.5 0.0 0.1 1 10 1 100 iil215at_07 I F - LED Current (mA) iil215at_04 100 1000 Fig. 9 - Normalized Saturated hFE vs. Base Current and Temperature 2.0 1000 NCTRce - Normalzed CTRce Vcb = 9.3 V 100 10 1 0.1 0.1 10 Ib - Base Current (µA) Fig. 6 - Normalized Collector Base Photocurrent vs. LED Current Icb - Collector Base Current (µA) typical 0 Fig. 8 - Collector Emitter Leakage Current vs.Temperature 100 iil215at_05 Vce = 10 V 1 iil215at_06 Fig. 5 - Collector Emitter Current vs. LED Current Nlcb - Normalized Icb 10 10 100 IF - LED Current (mA) iil215at_03 Iceo - Collector Emitter (nA) ICE - Collector Emitter Current (mA) 150 Vishay Semiconductors 1 10 100 IF - LED Current (mA) Fig. 7 - Collector Base Photocurrent vs. LED Current Document Number: 81955 Rev. 1.0, 02-Dec-08 Normalized to: 1.5 Vce = 5 V Vce = 5 V IF = 1 mA 1.0 0.5 Vce = 0.4 V 0.0 0.1 iil215at_08 1 10 100 IF - LED Current (mA) Fig. 10 - Normalized Non-Saturated and Saturated CTRCE vs. LED Current For technical questions, contact: [email protected] www.vishay.com 5 VO215AT, VO216AT, VO217AT Optocoupler, Phototransistor Output, Low Input Current, with Base Connection Vishay Semiconductors 100 20 Vce = 5 V NIce - Normalized Ice 10 Vce = 0.4 V IF = 1 mA 1 0.1 0.01 0.1 1 10 tpHL - High Low Propagation Delay (µs) Normalized to: Vce = 5 V 10 kΩ Vcc = 5 V 15 4.7 kΩ 2 kΩ 10 5 0 0 100 I F - LED Current (mA) Vth = 1.5 V 5 10 15 20 IF - LED Current (mA) iil215at_12 iil215at_09 Fig. 11 - Normalized Non-Saturated and Saturated Collector Emitter Current vs. LED Current Fig. 14 - High to Low Propagation Delay vs. LED Current and Load Resistor 80 100 10 kΩ Vce = 5 V IF = 1 mA 1 0.1 0.01 0.01 iil215at_10 60 Delay (µs) 10 tpLH - Low High Propagation NIcb - Normalized Icb Normalized to: 1 10 100 IF - LED Current (mA) 0 10 15 20 Fig. 15 - Low to High Propagation Delay vs. LED Current and Load Resistor 1.2 NhFE - Normalized hFE photocurrent (µA) Icb - Collector Base 5 iil215at_13 Vcb = 9.3 V 100 10 1 1.0 70 °C Normalized to: 50 °C Ib = 20 µA 25 °C Vce = 10 V - 20 °C 0.8 0.6 0.4 0.1 1 10 100 1 1000 IF - LED Current (mA) Fig. 13 - Collector Base Photocurrent vs. LED Current www.vishay.com 6 Vcc = 5 V,Vth = 1.5 V 1000 1000 iil215at_11 20 2 kΩ 0 0.1 Fig. 12 - Normalized Collector Base Photocurrent vs. LED Current 0.1 0.01 4.7 kΩ 40 iil215at_14 10 100 1000 Ib - Base Current (µA) Fig. 16 - Normalized Non-Saturated hFE vs. Base Current and Temperature For technical questions, contact: [email protected] Document Number: 81955 Rev. 1.0, 02-Dec-08 VO215AT, VO216AT, VO217AT Optocoupler, Phototransistor Output, Low Input Current, with Base Connection Input: IF = 10 mA Pulse width = 100 mS Duty cycle = 50 % Switching Time (µs) 50 1000 500 Switching Time (µs) 100 F T OF 10 5 TON Vishay Semiconductors Input: IF = 10 mA Pulse with = 100 mS Duty cycle = 50 % FF TO 100 1.0 50 10 TON 5 1 10K iil215at_15 50K 100K 500K 1M 0.1 Base Emitter Resistance, RBE (W) iil215at_16 Fig. 17 - Typical Switching Characteristics vs. Base Resistance (Saturated Operation) 0.5 1 5 10 50 100 Load Resistance RL (kΩ) Fig. 18 - Typical Switching Times vs. Load Resistance PACKAGE DIMENSIONS in inches (millimeters) 0.120 ± 0.005 (3.05 ± 0.13) R 0.010 (0.13) 0.240 (6.10) CL 0.154 ± 0.005 0.050 (1.27) 0.014 (0.36) (3.91 ± 0.13) 0.036 (0.91) 0.170 (4.32) 0.016 Pin one ID (0.41) 7° 0.058 ± 0.005 0.192 ± 0.005 0.015 ± 0.002 (4.88 ± 0.13) 0.045 (1.14) 0.260 (6.6) 40° (1.49 ± 0.13) (0.38 ± 0.05) 0.004 (0.10) 0.125 ± 0.005 0.008 (0.20) 0.008 (0.20) (3.18 ± 0.13) 5° max. 0.050 (1.27) typ. 0.020 ± 0.004 ISO method A 0.021 (0.53) R 0.010 Lead coplanarity (0.25) max. ± 0.0015 (0.04) max. (0.51 ± 0.10) 2 places i178003 Document Number: 81955 Rev. 1.0, 02-Dec-08 For technical questions, contact: [email protected] www.vishay.com 7 VO215AT, VO216AT, VO217AT Vishay Semiconductors Optocoupler, Phototransistor Output, Low Input Current, with Base Connection OZONE DEPLETING SUBSTANCES POLICY STATEMENT It is the policy of Vishay Semiconductor GmbH to 1. Meet all present and future national and international statutory requirements. 2. Regularly and continuously improve the performance of our products, processes, distribution and operating systems with respect to their impact on the health and safety of our employees and the public, as well as their impact on the environment. It is particular concern to control or eliminate releases of those substances into the atmosphere which are known as ozone depleting substances (ODSs). The Montreal Protocol (1987) and its London Amendments (1990) intend to severely restrict the use of ODSs and forbid their use within the next ten years. Various national and international initiatives are pressing for an earlier ban on these substances. Vishay Semiconductor GmbH has been able to use its policy of continuous improvements to eliminate the use of ODSs listed in the following documents. 1. Annex A, B and list of transitional substances of the Montreal Protocol and the London Amendments respectively. 2. Class I and II ozone depleting substances in the Clean Air Act Amendments of 1990 by the Environmental Protection Agency (EPA) in the USA. 3. Council Decision 88/540/EEC and 91/690/EEC Annex A, B and C (transitional substances) respectively. Vishay Semiconductor GmbH can certify that our semiconductors are not manufactured with ozone depleting substances and do not contain such substances. We reserve the right to make changes to improve technical design and may do so without further notice. Parameters can vary in different applications. All operating parameters must be validated for each customer application by the customer. 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Please contact authorized Vishay personnel to obtain written terms and conditions regarding products designed for such applications. Product names and markings noted herein may be trademarks of their respective owners. Document Number: 91000 Revision: 18-Jul-08 www.vishay.com 1