VO221AT, VO222AT, VO223AT www.vishay.com Vishay Semiconductors Optocoupler, Photodarlington Output, Low Input Current, High Gain, with Base Connection FEATURES A 1 8 NC • Isolation test voltage, 4000 VRMS C 2 7 B NC 3 6 C NC 4 5 E • Material categorization: For definitions of compliance please see www.vishay.com/doc?99912 AGENCY APPROVALS i179022-2 i179074 C • UL1577, file no. E52744 system code Y DESCRIPTION • cUL - file no. E52744, equivalent to CSA bulletin 5A The VO221AT, VO222AT, VO223AT are high current transfer ratio (CTR) optocouplers with a gallium arsenide infrared LED emitter and a silicon NPN photodarlington transistor detector. • DIN EN 60747-5-5 (VDE 0884-5) approved, contact customer service if this option is required The device has a CTR tested at 1 mA LED current. This low drive current permits easy interfacing from CMOS to LSTTL or TTL. ORDERING INFORMATION SOIC-8 V O 2 2 # A T PART NUMBER 6.1 mm AGENCY CERTIFIED/PACKAGE CTR (%) UL, cUL ≥ 100 ≥ 200 ≥ 500 SOIC-8 VO221AT VO222AT VO223AT ABSOLUTE MAXIMUM RATINGS (Tamb = 25 °C, unless otherwise specified) PARAMETER TEST CONDITION SYMBOL VALUE UNIT VR 6 V 1 μs, 300 pps IFM 1 A IF 60 mA Pdiss 90 mW 1.2 mW/°C INPUT Peak reverse voltage Peak forward current Forward continuous current Power dissipation Derate linearly from 25 °C OUTPUT Collector emitter breakdown voltage BVCEO 30 V Emitter collector breakdown voltage BVECO 5 V Collector base breakdown voltage ICmax. DC ICmax. Power dissipation Rev. 1.2, 22-Nov-12 t < 1 ms BVCBO 70 V ICmax. DC 50 mA ICmax. 100 mA Pdiss 150 mW Document Number: 81954 1 For technical questions, contact: [email protected] THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000 VO221AT, VO222AT, VO223AT www.vishay.com Vishay Semiconductors ABSOLUTE MAXIMUM RATINGS (Tamb = 25 °C, unless otherwise specified) PARAMETER TEST CONDITION SYMBOL VALUE UNIT 2 mW/°C t=1s VISO 4000 VRMS Ptot 240 mW 3.2 mW/°C Storage temperature Tstg - 40 to + 150 °C Operating temperature Tamb - 40 to + 100 °C Soldering time at 260 °C Tsld 10 s COUPLER Derate linearly from 25 °C Isolation test voltage Total package dissipation (at 25 °C ambient) (LED and detector) Derate linearly from 25 °C Note • Stresses in excess of the absolute maximum ratings can cause permanent damage to the device. Functional operation of the device is not implied at these or any other conditions in excess of those given in the operational sections of this document. Exposure to absolute maximum ratings for extended periods of the time can adversely affect reliability. ELECTRICAL CHARACTERISTICS (Tamb = 25 °C, unless otherwise specified) PARAMETER TEST CONDITION SYMBOL MIN. TYP. MAX. UNIT Forward voltage IF = 1 mA VF 1 1.5 V Reverse current VR = 6 V IR 0.1 100 μA VR = 0 V, f = 1 MHz CO 25 IC = 100 μA BVCEO INPUT Capacitance pF OUTPUT Collector emitter breakdown voltage 30 V V Emitter collector breakdown voltage IC = 10 μA BVECO 5 Collector base breakdown voltage IC = 10 μA BVCBO 70 Collector emitter leackage current VCE = 20 V ICEO 40 nA ICBO 1 nA IEBO 1 nA Collector base current Emitter base current Collector emitter capacitance VCE = 10 V CCE Saturation voltage, collector emitter ICE = 0.5 mA VCEsat V 3.4 pF 1 V COUPLER Capacitance (input to output) CIO 0.5 pF Note • Minimum and maximum values are tested requierements. Typical values are characteristics of the device and are the result of engineering evaluations. Typical values are for information only and are not part of the testing requirements. CURRENT TRANSFER RATIO (Tamb = 25 °C, unless otherwise specified) PARAMETER IC/IF Rev. 1.2, 22-Nov-12 TEST CONDITION IF = 1 mA, VCE = 5 V PART SYMBOL MIN. VO221AT CTRDC 100 TYP. MAX. UNIT % VO222AT CTRDC 200 % VO223AT CTRDC 500 % Document Number: 81954 2 For technical questions, contact: [email protected] THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000 VO221AT, VO222AT, VO223AT www.vishay.com Vishay Semiconductors SWITCHING CHARACTERISTICS (Tamb = 25 °C, unless otherwise specified) PARAMETER TEST CONDITION SYMBOL Turn-on time VCC = 10 V, RL = 100 Ω, IF = 5 mA ton MIN. TYP. 3 MAX. UNIT μs Turn-off time VCC = 10 V, RL = 100 Ω, IF = 5 mA toff 3 μs VCC = 10 V IF f = 10 kHz, RL DF = 50 % trise VO VO 10 % toff 50 % IF = 5 mA 90 % iild223t_09 tfall ton Fig. 1 - Switching Test Circuit SAFETY AND INSULATION RATINGS PARAMETER Climatic classification TEST CONDITION SYMBOL MIN. according to IEC 68 part 1 TYP. MAX. UNIT 40/100/21 Polution degree 2 Comparative tracking index CTI 175 VISO 4000 Peak transient overvoltage VIOTM 6000 V Peak insulation voltage VIORM 560 V Isolation test voltage 1s 399 VRMS Ω 1011 Resistance (input to output) RIO Safety rating - power output PSO 350 mW Safety rating - input current ISI 150 mA Safety rating - temperature TSI 165 °C External creepage distance 4 External clearance distance 4 mm mm Internal creepage distance 3.3 mm Insulation thickness 0.2 mm Note • As per IEC 60747-5-2, § 7.4.3.8.1, this optocoupler is suitable for “safe electrical insulation” only within the safety ratings. Compliance with the safety ratings shall be ensured by means of protective circuits. Rev. 1.2, 22-Nov-12 Document Number: 81954 3 For technical questions, contact: [email protected] THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000 VO221AT, VO222AT, VO223AT www.vishay.com Vishay Semiconductors TYPICAL CHARACTERISTICS (Tamb = 25 °C, unless otherwise specified) 100 1.3 TA = - 55 °C Normalized CTRce VF - Forward Voltage (V) 1.4 1.2 TA = 25 °C 1.1 1.0 0.9 TA = 100 °C 10 1 Normalized to: IF = 1 mA, VCE = 5 V TA = 25 °C 0.8 0.7 0.1 0.1 1 10 0.1 100 IF - Forward Current (mA) iil221at_01 iil221at_04 Fig. 2 - Forward Voltage vs. Forward Current 1 10 100 I F - LED Current (mA) Fig. 5 - Normalized CTRCE vs. LED Current 10 000 0.10 Duty Factor 0.005 0.01 1000 0.02 0.05 0.1 0.2 0.5 100 t DF = τ/t IF/ICB - CTR cb (%) IF (pk)- Peak LED Current (mA) TA = - 20 °C TA = 25 °C TA = 50 °C TA = 70 °C 10 t- LED Pulse Duration (s) TA = - 20 °C TA = 25 °C TA = 50 °C TA = 70 °C 0.00 0.1 10 -6 10 -5 10 -4 10 -3 10 -2 10 -1 10 0 10 1 iil221at_02 0.05 iil221at_05 Fig. 3 - Peak LED Current vs. Duty Factor, τ 2 Normalized to: IF = 1 mA, TA = 25 °C VCB = 10 V TA = - 20 °C TA = 25 °C TA = 50 °C TA= 70 °C 1 0 0.1 iil221at_03 0 10 IF - LED Current (mA) Fig. 4 - Normalized CTRcb vs. IF Rev. 1.2, 22-Nov-12 100 10 100 Fig. 6 - CTRCB vs. LED Current CTR CE - Current Transfer Ratio (%) Normalized CTRcb 3 1 IF - LED Current (mA) 2000 TA = - 20 °C TA = 25 °C 1500 TA = 50 °C TA = 70 °C VCE = 10 V 1000 500 0 0.1 iil221at_06 1 10 100 IF - LED Current (mA) Fig. 7 - CTR vs. LED Current Document Number: 81954 4 For technical questions, contact: [email protected] THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000 VO221AT, VO222AT, VO223AT www.vishay.com Vishay Semiconductors 1000 Tamb = - 20 °C Tamb = 25 °C Tamb = 50 °C Tamb = 70 °C 100 VCE = 5 V Normalized ICB ICE - Collector Current (mA) 1000 10 10 1 100 IF - LED Current (mA) iil221at_07 10 1 0.1 0.1 1 0.1 100 TA = - 20 °C Normalized to: TA = 20 °C IF = 1 mA,TA = 25 °C TA = 50 °C VCB = 10 V TA = 70 °C iil221at_09 Fig. 8 - Collector Current vs. LED Current 1 10 100 IF - LED Current (mA) Fig. 10 - Normalized ICB vs. IF ICB - Photocurrent (µA) 100 ICB I CB ICB ICB 10 = - 20 °C = 25 °C = 50 °C = 70 °C 1 0.1 0.1 IF - LED Current (mA) iil221at_08 Fig. 9 - Photocurrent vs. LED Current PACKAGE DIMENSIONS in millimeters 3.05 ± 0.13 R 0.13 CL 6.10 1.27 3.91 ± 0.13 0.36 0.91 4.32 6.6 0.41 Pin one ID 1.14 7° 4.88 ± 0.13 40° 0.38 ± 0.05 1.49 ± 0.13 ISO method A 3.18 ± 0.13 0.20 5° max. 0.1 0.2 R 0.25 max. 1.27 typ. Lead coplanarity ± 0.04 max. 0.53 0.51 ± 0.10 2 places i178003 Rev. 1.2, 22-Nov-12 Document Number: 81954 5 For technical questions, contact: [email protected] THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000 VO221AT, VO222AT, VO223AT www.vishay.com Vishay Semiconductors PACKAGE MARKING (example) 221A V YWW Y 68 21764-133 TAPE AND REEL PACKAGING Dimensions in millimeters ESD sticker 4 ± 0.1 Pin 1 and top of component 0.35 Tape slot in core 1.5 min. 2 ± 0.05 10 pitch cumulative tolerance on tape ± 0.2 Top cover tape 1.75 ± 0.1 6.4 330 (13") 5.5 12.0 ± 0.3 3.78 5.25 9.2 8.0 ± 0.1 Regular, special or bar code label 0.1 max. 18003-1 Embossment Center lines of cavity 1.5 Direction of feed 17999 Fig. 11 - Tape and Reel Shipping Medium (EIA-481, revision A, and IEC 60286), 2000 units per reel Rev. 1.2, 22-Nov-12 Fig. 12 - Tape Dimensions, 2000 Parts per Reel Document Number: 81954 6 For technical questions, contact: [email protected] THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. 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