AOTF10N50FD 500V, 10A N-Channel MOSFET with Fast Recovery Diode General Description Product Summary The AOTF10N50FD has been fabricated using an advanced high voltage MOSFET process that is designed to deliver high levels of performance and robustness in popular AC-DC applications. By providing low RDS(on), Ciss and Crss along with guaranteed avalanche capability this part can be adopted quickly into new and existing offline power supply designs. VDS ID (at VGS=10V) 600V@150℃ 10A RDS(ON) (at VGS=10V) < 0.75Ω 100% UIS Tested 100% Rg Tested For Halogen Free add "L" suffix to part number: AOTF10N50FDL Top View TO-220F D G AOTF10N50FD G D S S Absolute Maximum Ratings TA=25°C unless otherwise noted Parameter Symbol Drain-Source Voltage VDS Gate-Source Voltage Continuous Drain Current VGS TC=25°C TC=100°C ID AOTF10N50FD 500 Units V ±30 V 10* 6* A Pulsed Drain Current C IDM Avalanche Current C IAR 3.8 A Repetitive avalanche energy C EAR 216 mJ 433 5 50 mJ V/ns W 0.4 -55 to 150 W/ oC °C 300 °C AOT10N50FD 65 2.5 Units °C/W °C/W Single pulsed avalanche energy G EAS Peak diode recovery dv/dt dv/dt TC=25°C PD Power Dissipation B Derate above 25oC Junction and Storage Temperature Range TJ, TSTG Maximum lead temperature for soldering TL purpose, 1/8" from case for 5 seconds Thermal Characteristics Parameter Symbol Maximum Junction-to-Ambient A,D RθJA Maximum Junction-to-Case RθJC * Drain current limited by maximum junction temperature. Rev.1.0: July 2013 www.aosmd.com 33 Page 1 of 6 AOTF10N50FD Electrical Characteristics (TJ=25°C unless otherwise noted) Symbol Parameter Conditions Min ID=10mA, VGS=0V, TJ=25°C 500 Typ Max Units STATIC PARAMETERS BVDSS Drain-Source Breakdown Voltage BVDSS /∆TJ Breakdown Voltage Temperature Coefficient IDSS Zero Gate Voltage Drain Current ID=10mA, VGS=0V, TJ=150°C 600 V ID=10mA, VGS=0V 0.56 V/ oC VDS=500V, VGS=0V 10 VDS=400V, TJ=125°C 100 IGSS Gate-Body leakage current VDS=0V, VGS=±30V VGS(th) Gate Threshold Voltage VDS=5V, ID=250µA ±100 2.5 µA 3.1 4.2 nΑ V 0.75 Ω 1.6 V RDS(ON) Static Drain-Source On-Resistance VGS=10V, ID=5A 0.6 gFS Forward Transconductance VDS=40V, ID=5A 10 VSD Diode Forward Voltage IS=10A,VGS=0V 0.93 IS Maximum Body-Diode Continuous Current 10 A ISM Maximum Body-Diode Pulsed Current 33 A DYNAMIC PARAMETERS Input Capacitance Ciss Coss Output Capacitance Crss Reverse Transfer Capacitance Rg Gate resistance VGS=0V, VDS=25V, f=1MHz VGS=0V, VDS=0V, f=1MHz SWITCHING PARAMETERS Qg Total Gate Charge Qgs Gate Source Charge Qgd 820 1030 1240 pF 75 112 150 pF 5 10 15 pF 1.7 3.4 5.2 Ω 26 35 nC 20 VGS=10V, VDS=400V, ID=10A S 4.8 nC Gate Drain Charge 9.5 nC tD(on) Turn-On DelayTime 24 ns tr Turn-On Rise Time 65 ns 69 ns VGS=10V, VDS=250V, ID=10A, RG=25Ω tD(off) Turn-Off DelayTime tf trr Turn-Off Fall Time Body Diode Reverse Recovery Time IF=10A,dI/dt=100A/µs,VDS=100V 116 190 Qrr Body Diode Reverse Recovery Charge IF=10A,dI/dt=100A/µs,VDS=100V 0.3 0.6 50 ns ns µC A. The value of R θJA is measured with the device in a still air environment with T A =25°C. B. The power dissipation PD is based on TJ(MAX)=150°C, using junction-to-case thermal resistance, and is more useful in setting the upper dissipation limit for cases where additional heatsinking is used. C. Repetitive rating, pulse width limited by junction temperature TJ(MAX)=150°C, Ratings are based on low frequency and duty cycles to keep initial TJ =25°C. D. The R θJA is the sum of the thermal impedance from junction to case R θJC and case to ambient. E. The static characteristics in Figures 1 to 6 are obtained using <300 µs pulses, duty cycle 0.5% max. F. These curves are based on the junction-to-case thermal impedance which is measured with the device mounted to a large heatsink, assuming a maximum junction temperature of T J(MAX)=150°C. The SOA curve provides a single pulse rating. G. L=60mH, IAS=3.8A, =2.3A, VDD=150V, RG=25Ω, Starting TJ=25°C THIS PRODUCT HAS BEEN DESIGNED AND QUALIFIED FOR THE CONSUMER MARKET. APPLICATIONS OR USES AS CRITICAL COMPONENTS IN LIFE SUPPORT DEVICES OR SYSTEMS ARE NOT AUTHORIZED. AOS DOES NOT ASSUME ANY LIABILITY ARISING OUT OF SUCH APPLICATIONS OR USES OF ITS PRODUCTS. AOS RESERVES THE RIGHT TO IMPROVE PRODUCT DESIGN, FUNCTIONS AND RELIABILITY WITHOUT NOTICE. Rev.1.0: July 2013 www.aosmd.com Page 2 of 6 AOTF10N50FD TYPICAL ELECTRICAL AND THERMAL CHARACTERISTICS 100 25 -55°C VDS=40V 20 10V 10 ID (A) ID(A) 6.5V 15 6V 125°C 10 1 5.5V 25°C 5 VGS=5V 0.1 0 0 5 10 15 20 25 VDS (Volts) Fig 1: On-Region Characteristics 2 30 6 8 10 VGS(Volts) Figure 2: Transfer Characteristics 2.0 Normalized On-Resistance 3 1.6 RDS(ON) (Ω) 4 1.2 VGS=10V 0.8 0.4 2.5 2 1.5 1 0.5 0.0 0 4 8 12 16 VGS=10V ID=5A 0 -100 20 ID (A) Figure 3: On-Resistance vs. Drain Current and Gate Voltage -50 0 50 100 150 200 Temperature (°C) Figure 4: On-Resistance vs. Junction Temperature 1.2 1E+02 1E+00 125°C 1E-01 IS (A) BVDSS (Normalized) 1E+01 1.1 1 1E-02 25°C 1E-03 0.9 1E-04 0.8 -100 1E-05 -50 0 50 100 150 200 TJ (oC) Figure 5: Break Down vs. Junction Temperature Rev.1.0: July 2013 www.aosmd.com 0.0 0.4 0.8 1.2 1.6 VSD (Volts) Figure 6: Body-Diode Characteristics (Note E) Page 3 of 6 AOTF10N50FD TYPICAL ELECTRICAL AND THERMAL CHARACTERISTICS 10000 15 Capacitance (pF) VGS (Volts) Ciss VDS=400V ID=10A 12 9 6 1000 Coss 100 Crss 10 3 1 0 0 8 16 24 32 Qg (nC) Figure 7: Gate-Charge Characteristics 0.1 40 100 10 VDS (Volts) Figure 8: Capacitance Characteristics 100 RDS(ON) limited 10µs 100µs 1ms 1 10ms 0.1s 1s DC 0.1 TJ(Max)=150°C TC=25°C Current rating ID(A) 12 10 ID (Amps) 1 10 8 6 4 2 0.01 0 1 10 100 1000 0 VDS (Volts) Figure 9: Maximum Forward Biased Safe Operating Area for AOTF10N50FD (Note F) 25 50 75 100 125 TCASE (oC) Figure 10: Current De-rating (Note B) 150 ZθJC Normalized Transient Thermal Resistance 10 1 D=Ton/T TJ,PK=TC+PDM.ZθJC.RθJC RθJC=2.5°C/W In descending order D=0.5, 0.3, 0.1, 0.05, 0.02, 0.01, single pulse 0.1 Single Pulse 0.01 0.001 0.00001 Rev.1.0: July 2013 0.0001 0.001 0.01 0.1 1 10 Pulse Width (s) Figure 11: Normalized Maximum Transient Thermal Impedance for AOTF10N50FD (Note F) www.aosmd.com 100 Page 4 of 6 AOTF10N50FD TYPICAL ELECTRICAL AND THERMAL CHARACTERISTICS 15 VDS=100V IF=10A dI/dt=100A/µs AOTF10N50FD 10 5 IF (A) 0 -5 -10 -15 -800 AOT9N50 -600 -400 -200 0 200 400 600 800 1000 1200 Trr (nS) Figure 12: Diode Recovery Characteristics Rev.1.0: July 2013 www.aosmd.com Page 5 of 6 AOTF10N50FD Gate Charge Test Circuit & Waveform Vgs Qg 10V + + Vds VDC - Qgs Qgd VDC DUT - Vgs Ig Charge Res istive Switching Test Circuit & Waveforms RL Vds Vds DUT Vgs + VDC 90% Vdd - Rg 10% Vgs Vgs t d(on) tr t d(off) t on tf t off Unclamped Inductive Switching (UIS) Test Circuit & Waveforms L EAR= 1/2 LI Vds 2 AR BVDSS Vds Id + Vgs Vgs VDC - Rg Vdd I AR Id DUT Vgs Vgs Diode Recovery Tes t Circuit & Waveforms Qrr = - Idt Vds + DUT Vgs Vds - Isd Vgs Ig Rev.1.0: July 2013 L Isd + VDC - IF trr dI/dt IRM Vdd Vdd Vds www.aosmd.com Page 6 of 6