AOD536 30V N-Channel AlphaMOS General Description Product Summary VDS • Trench Power AlphaMOS (αMOS LV) technology • Low RDS(ON) • Low Gate Charge • High Current Capability • RoHS and Halogen-Free Compliant 30V 46A ID (at VGS=10V) Applications RDS(ON) (at VGS=10V) < 8.5mΩ RDS(ON) (at VGS=4.5V) < 14.7mΩ 100% UIS Tested 100% Rg Tested • DC/DC Converters in Computing, Servers, and POL • Isolated DC/DC Converters in Telecom and Industrial TO252 DPAK D TopView Bottom View D D S G D G S G S Orderable Part Number Package Type Form Minimum Order Quantity AOD536 TO-252 Tape & Reel 2500 Absolute Maximum Ratings TA=25°C unless otherwise noted Parameter Drain-Source Voltage Symbol VDS Gate-Source Voltage VGS TC=25°C Continuous Drain CurrentG Pulsed Drain Current Continuous Drain Current Avalanche Current C Avalanche energy VDS Spike L=0.1mH C 10µs Power Dissipation B TA=25°C Power Dissipation A Junction and Storage Temperature Range Thermal Characteristics Parameter Maximum Junction-to-Ambient A Maximum Junction-to-Ambient A D Maximum Junction-to-Case Rev.1.0: July 2014 IAS 24 A EAS 29 mJ 36 V 37.5 6.2 Steady-State Steady-State W 4 TJ, TSTG Symbol t ≤ 10s W 18.5 PDSM TA=70°C A 16.5 PD TC=100°C A 20.5 VSPIKE TC=25°C V 127 IDSM TA=70°C ±20 36 IDM TA=25°C Units V 46 ID TC=100°C C Maximum 30 RθJA RθJC -55 to 175 Typ 15 40 3.3 www.aosmd.com °C Max 20 50 4 Units °C/W °C/W °C/W Page 1 of 6 Electrical Characteristics (TJ=25°C unless otherwise noted) Symbol Parameter STATIC PARAMETERS BVDSS Drain-Source Breakdown Voltage Conditions Min ID=250µA, VGS=0V Zero Gate Voltage Drain Current IGSS VGS(th) Gate-Body leakage current VDS=0V, VGS=±20V Gate Threshold Voltage VDS=VGS, ID=250µA gFS Forward Transconductance VDS=5V, ID=20A 1.4 VSD Diode Forward Voltage IS=1A,VGS=0V IS Maximum Body-Diode Continuous Current TJ=125°C VGS=4.5V, ID=20A Crss Reverse Transfer Capacitance Rg Gate resistance ±100 nA 1.8 2.2 V 7 8.5 10 12 11.6 14.7 0.73 VGS=0V, VDS=15V, f=1MHz mΩ S 1 V 40 A 1140 pF 400 pF 45 pF 2.5 3.8 Ω 14 22 nC Qg(4.5V) Total Gate Charge 6.5 12 Gate Source Charge Qgd tD(on) tr Turn-On Rise Time tD(off) Turn-Off DelayTime tf trr Turn-Off Fall Time Qrr VGS=10V, VDS=15V, ID=20A 1.2 mΩ SWITCHING PARAMETERS Qg(10V) Total Gate Charge Qgs f=1MHz µA 42 DYNAMIC PARAMETERS Input Capacitance Ciss Output Capacitance V 5 VGS=10V, ID=20A Static Drain-Source On-Resistance Units 1 TJ=55°C RDS(ON) Max 30 VDS=30V, VGS=0V IDSS Coss Typ nC 3 nC Gate Drain Charge 2.5 nC Turn-On DelayTime 7 ns 13.5 ns 18.5 ns VGS=10V, VDS=15V, RL=0.75Ω, RGEN=3Ω 4 ns IF=20A, dI/dt=500A/µs 12 Body Diode Reverse Recovery Charge IF=20A, dI/dt=500A/µs 20 ns nC Body Diode Reverse Recovery Time A. The value of RθJA is measured with the device mounted on 1in2 FR-4 board with 2oz. Copper, in a still air environment with TA =25°C. The Power dissipation PDSM is based on R θJA t≤ 10s and the maximum allowed junction temperature of 150°C. The value in any given application depends on the user's specific board design, and the maximum temperature of 175°C may be used if the PCB allows it. B. The power dissipation PD is based on TJ(MAX)=175°C, using junction-to-case thermal resistance, and is more useful in setting the upper dissipation limit for cases where additional heatsinking is used. C. Single pulse width limited by junction temperature TJ(MAX)=175°C. D. The RθJA is the sum of the thermal impedance from junction to case RθJC and case to ambient. E. The static characteristics in Figures 1 to 6 are obtained using <300µs pulses, duty cycle 0.5% max. F. These curves are based on the junction-to-case thermal impedance which is measured with the device mounted to a large heatsink, assuming a maximum junction temperature of TJ(MAX)=175°C. The SOA curve provides a single pulse rating. G. The maximum current rating is package limited. H. These tests are performed with the device mounted on 1 in2 FR-4 board with 2oz. Copper, in a still air environment with TA=25°C. THIS PRODUCT HAS BEEN DESIGNED AND QUALIFIED FOR THE CONSUMER MARKET. APPLICATIONS OR USES AS CRITICAL COMPONENTS IN LIFE SUPPORT DEVICES OR SYSTEMS ARE NOT AUTHORIZED. AOS DOES NOT ASSUME ANY LIABILITY ARISING OUT OF SUCH APPLICATIONS OR USES OF ITS PRODUCTS. AOS RESERVES THE RIGHT TO IMPROVE PRODUCT DESIGN, FUNCTIONS AND RELIABILITY WITHOUT NOTICE. Rev.1.0: July 2014 www.aosmd.com Page 2 of 6 TYPICAL ELECTRICAL AND THERMAL CHARACTERISTICS 100 100 10V 6V 80 VDS=5V 80 8V 4.5V 60 ID(A) ID (A) 60 4V 40 40 3.5V 125°C 20 20 VGS=3V 25°C 0 0 0 1 2 3 4 0 5 1 3 4 5 6 VGS(Volts) Figure 2: Transfer Characteristics (Note E) VDS (Volts) Figure 1: On-Region Characteristics (Note E) 16 Normalized On-Resistance 1.8 VGS=4.5V 12 RDS(ON) (mΩ) 2 8 VGS=10V 4 1.6 VGS=10V ID=20A 1.4 1.2 VGS=4.5V ID=20A 1 0.8 0 0 5 10 15 20 25 0 30 25 50 75 100 125 150 175 200 Temperature (°C) Figure 4: On-Resistance vs. Junction Temperature (Note E) ID (A) Figure 3: On-Resistance vs. Drain Current and Gate Voltage (Note E) 30 1.0E+02 ID=20A 1.0E+01 1.0E+00 20 125°C IS (A) RDS(ON) (mΩ) 25 125°C 15 1.0E-01 1.0E-02 10 1.0E-03 5 25°C 1.0E-04 25°C 0 1.0E-05 2 4 6 8 10 VGS (Volts) Figure 5: On-Resistance vs. Gate-Source Voltage (Note E) Rev.1.0: July 2014 www.aosmd.com 0.0 0.2 0.4 0.6 0.8 1.0 1.2 VSD (Volts) Figure 6: Body-Diode Characteristics (Note E) Page 3 of 6 TYPICAL ELECTRICAL AND THERMAL CHARACTERISTICS 10 1500 VDS=15V ID=20A Ciss 1200 Capacitance (pF) VGS (Volts) 8 6 4 2 900 600 Coss 300 Crss 0 0 0 3 6 9 12 15 0 5 Qg (nC) Figure 7: Gate-Charge Characteristics 15 20 25 30 VDS (Volts) Figure 8: Capacitance Characteristics 500 1000.0 10µs 10µs RDS(ON) limited 10.0 100µs DC 1ms 10ms 1.0 TJ(Max)=175°C TC=25°C 0.1 0.0 0.01 TJ(Max)=175°C TC=25°C 400 Power (W) 100.0 ID (Amps) 10 300 200 100 0.1 1 10 VDS (Volts) VGS> or equal to 4.5V Figure 9: Maximum Forward Biased Safe Operating Area (Note F) 0 0.0001 100 0.001 0.01 0.1 1 10 Pulse Width (s) Figure 10: Single Pulse Power Rating Junction-toCase (Note F) ZθJC Normalized Transient Thermal Resistance 10 D=Ton/T TJ,PK=TC+PDM.ZθJC.RθJC In descending order D=0.5, 0.3, 0.1, 0.05, 0.02, 0.01, single pulse RθJC=4°C/W 1 0.1 PD Single Pulse Ton T 0.01 1E-05 0.0001 0.001 0.01 0.1 1 10 Pulse Width (s) Figure 11: Normalized Maximum Transient Thermal Impedance (Note F) Rev.1.0: July 2014 www.aosmd.com Page 4 of 6 TYPICAL ELECTRICAL AND THERMAL CHARACTERISTICS 40 60 Current rating ID(A) Power Dissipation (W) 30 20 10 40 20 0 0 0 25 50 75 100 125 150 175 0 25 TCASE (°C) Figure 12: Power De-rating (Note F) 50 75 100 125 150 175 TCASE (°C) Figure 13: Current De-rating (Note F) 10000 TA=25°C Power (W) 1000 100 10 1 1E-05 0.001 0.1 10 1000 ZθJA Normalized Transient Thermal Resistance Pulse Width (s) Figure 14: Single Pulse Power Rating Junction-to-Ambient (Note H) 10 1 D=Ton/T TJ,PK=TA+PDM.ZθJA.RθJA RθJA=50°C/W In descending order D=0.5, 0.3, 0.1, 0.05, 0.02, 0.01, single pulse 0.1 0.01 PD Single Pulse Ton 0.001 0.0001 0.001 0.01 0.1 1 10 T 100 1000 Pulse Width (s) Figure 15: Normalized Maximum Transient Thermal Impedance (Note H) Rev.1.0: July 2014 www.aosmd.com Page 5 of 6 Gate Charge Test Circuit & Waveform Vgs Qg 10V + + Vds VDC - Qgs Qgd VDC - DUT Vgs Ig Charge Resistive Switching Test Circuit & Waveforms RL Vds Vds DUT Vgs 90% + Vdd VDC - Rg 10% Vgs Vgs td(on) tr td(off) ton tf toff Unclamped Inductive Switching (UIS) Test Circuit & Waveforms L 2 EAR= 1/2 LIAR Vds BVDSS Vds Id + Vdd Vgs Vgs I AR VDC - Rg Id DUT Vgs Vgs Diode Recovery Test Circuit & Waveforms Q rr = - Idt Vds + DUT Vds - Isd Vgs Ig Rev.1.0: July 2014 Vgs L Isd + Vdd t rr dI/dt I RM Vdd VDC - IF Vds www.aosmd.com Page 6 of 6