AOTF2210L 200V N-Channel MOSFET General Description Product Summary VDS • Trench Power MV MOSFET technology • Low RDS(ON) • Low Gate Charge • Optimized for fast-switching applications Applications ID (at VGS=10V) 200V 13A RDS(ON) (at VGS=10V) < 90mΩ RDS(ON) (at VGS=5V) < 106mΩ 100% UIS Tested 100% Rg Tested • Synchronous Rectification in DC/DC and AC/DC Converters • Industrial and Motor Drive applications TO220F Top View Bottom View G D D G S S D G S Orderable Part Number Package Type Form Minimum Order Quantity AOTF2210L TO-220F Tube 1000 Absolute Maximum Ratings TA=25°C unless otherwise noted Parameter Drain-Source Voltage Symbol VDS Gate-Source Voltage VGS TC=25°C Continuous Drain Current Pulsed Drain Current Avalanche Current C Avalanche energy VDS Spike Power Dissipation B L=0.1mH C 10µs TC=25°C Junction and Storage Temperature Range Thermal Characteristics Parameter Maximum Junction-to-Ambient A Maximum Junction-to-Ambient A D Maximum Junction-to-Case Rev.1.0: November 2014 IAS 9 A EAS 4 mJ 240 V 36.5 8.3 Steady-State Steady-State W 5.3 TJ, TSTG Symbol t ≤ 10s W 18 PDSM TA=70°C A 5.0 PD TA=25°C Power Dissipation A A 6.5 VSPIKE TC=100°C V 45 IDSM TA=70°C ±20 9 IDM TA=25°C Continuous Drain Current Units V 13 ID TC=100°C C Maximum 200 RθJA RθJC -55 to 175 Typ 10 45 3.4 www.aosmd.com °C Max 15 55 4.1 Units °C/W °C/W °C/W Page 1 of 6 Electrical Characteristics (TJ=25°C unless otherwise noted) Symbol Parameter STATIC PARAMETERS Drain-Source Breakdown Voltage BVDSS Conditions Min ID=250µA, VGS=0V 200 Zero Gate Voltage Drain Current IGSS VGS(th) Gate-Body leakage current VDS=0V, VGS=±20V Gate Threshold Voltage VDS=VGS, ID=250µA 1.5 TJ=125°C VGS=5V, ID=11A gFS Forward Transconductance VSD Diode Forward Voltage IS=1A,VGS=0V IS Maximum Body-Diode Continuous Current DYNAMIC PARAMETERS Ciss Input Capacitance Coss Output Capacitance Crss Reverse Transfer Capacitance Rg Gate resistance µA 5 VGS=10V, ID=13A VDS=5V, ID=13A Units 1 TJ=55°C Static Drain-Source On-Resistance Max V VDS=200V, VGS=0V IDSS RDS(ON) Typ ±100 nA 2.0 2.5 V 74 90 146 178 83 106 mΩ 1 V 14 A 50 0.7 S 2065 VGS=0V, VDS=100V, f=1MHz f=1MHz pF 74 pF 3.8 pF 2.2 3.3 Ω SWITCHING PARAMETERS Qg(10V) Total Gate Charge 27 40 nC Qg(4.5V) Total Gate Charge 12 20 Qgs Gate Source Charge Qgd tD(on) VGS=10V, VDS=100V, ID=13A 1.1 mΩ nC 7 nC Gate Drain Charge 3 nC Turn-On DelayTime 8 ns 10 ns tr Turn-On Rise Time tD(off) Turn-Off DelayTime tf trr Turn-Off Fall Time Qrr VGS=10V, VDS=100V, RL=7.7Ω, RGEN=3Ω 30 ns 4 ns IF=13A, dI/dt=500A/µs 60 Body Diode Reverse Recovery Charge IF=13A, dI/dt=500A/µs 800 ns nC Body Diode Reverse Recovery Time A. The value of RθJA is measured with the device mounted on 1in2 FR-4 board with 2oz. Copper, in a still air environment with TA =25°C. The Power dissipation PDSM is based on R θJA t≤ 10s and the maximum allowed junction temperature of 150°C. The value in any given application depends on the user's specific board design, and the maximum temperature of 175°C may be used if the PCB allows it. B. The power dissipation PD is based on TJ(MAX)=175°C, using junction-to-case thermal resistance, and is more useful in setting the upper dissipation limit for cases where additional heatsinking is used. C. Single pulse width limited by junction temperature TJ(MAX)=175°C. D. The RθJA is the sum of the thermal impedance from junction to case RθJC and case to ambient. E. The static characteristics in Figures 1 to 6 are obtained using <300µs pulses, duty cycle 0.5% max. F. These curves are based on the junction-to-case thermal impedance which is measured with the device mounted to a large heatsink, assuming a maximum junction temperature of TJ(MAX)=175°C. The SOA curve provides a single pulse rating. G. The maximum current rating is package limited. H. These tests are performed with the device mounted on 1 in2 FR-4 board with 2oz. Copper, in a still air environment with TA=25°C. THIS PRODUCT HAS BEEN DESIGNED AND QUALIFIED FOR THE CONSUMER MARKET. APPLICATIONS OR USES AS CRITICAL COMPONENTS IN LIFE SUPPORT DEVICES OR SYSTEMS ARE NOT AUTHORIZED. AOS DOES NOT ASSUME ANY LIABILITY ARISING OUT OF SUCH APPLICATIONS OR USES OF ITS PRODUCTS. AOS RESERVES THE RIGHT TO IMPROVE PRODUCT DESIGN, FUNCTIONS AND RELIABILITY WITHOUT NOTICE. Rev.1.0: November 2014 www.aosmd.com Page 2 of 6 TYPICAL ELECTRICAL AND THERMAL CHARACTERISTICS 30 30 10V VDS=5V 3.5V 25 25 4.5V 5V 20 ID(A) ID (A) 20 15 10 15 125°C 10 VGS=3V 5 25°C 5 0 0 0 1 2 3 4 1 5 2 3 4 5 VGS(Volts) Figure 2: Transfer Characteristics (Note E) VDS (Volts) Figure 1: On-Region Characteristics (Note E) 130 2.8 Normalized On-Resistance 2.6 RDS(ON) (mΩ) 110 VGS=5V 90 70 VGS=10V 2.4 VGS=10V ID=13A 2.2 2 1.8 1.6 1.4 VGS=5V ID=11A 1.2 1 0.8 50 0 5 10 15 20 25 0 30 25 50 75 100 125 150 175 200 Temperature (°C) Figure 4: On-Resistance vs. Junction Temperature (Note E) ID (A) Figure 3: On-Resistance vs. Drain Current and Gate Voltage (Note E) 180 1.0E+02 ID=13A 160 1.0E+01 1.0E+00 125°C IS (A) RDS(ON) (mΩ) 140 120 1.0E-01 100 1.0E-02 80 1.0E-03 25°C 60 125°C 25°C 1.0E-04 40 1.0E-05 2 4 6 8 10 VGS (Volts) Figure 5: On-Resistance vs. Gate-Source Voltage (Note E) Rev.1.0: November 2014 www.aosmd.com 0.0 0.2 0.4 0.6 0.8 1.0 VSD (Volts) Figure 6: Body-Diode Characteristics (Note E) Page 3 of 6 TYPICAL ELECTRICAL AND THERMAL CHARACTERISTICS 10 3000 VDS=100V ID=13A 2500 Ciss Capacitance (pF) VGS (Volts) 8 6 4 2000 1500 1000 2 Coss 500 Crss 0 0 0 10 20 30 0 Qg (nC) Figure 7: Gate-Charge Characteristics 50 100 150 200 VDS (Volts) Figure 8: Capacitance Characteristics 500 1000.0 TJ(Max)=175°C TC=25°C 10µs 100.0 400 10.0 1ms 10ms 1.0 DC 0.1 10 300 200 100 TJ(Max)=175°C TC=25°C 0.0 0.01 ZθJC Normalized Transient Thermal Resistance 100µs RDS(ON) limited Power (W) ID (Amps) 10µs 0 0.0001 0.001 0.01 0.1 1 10 100 1000 VDS (Volts) VGS> or equal to 5V Figure 9: Maximum Forward Biased Safe Operating Area (Note F) 0.1 1 10 100 1000 Pulse Width (s) Figure 10: Single Pulse Power Rating Junction-toCase (Note F) D=Ton/T TJ,PK=TC+PDM.ZθJC.RθJC In descending order D=0.5, 0.3, 0.1, 0.05, 0.02, 0.01, single pulse RθJC=4.1°C/W 1 PDM 0.1 Single Pulse Ton T 0.01 1E-05 0.0001 0.001 0.01 0.1 1 10 100 1000 Pulse Width (s) Figure 11: Normalized Maximum Transient Thermal Impedance (Note F) Rev.1.0: November 2014 www.aosmd.com Page 4 of 6 40 20 30 15 Current rating ID(A) Power Dissipation (W) TYPICAL ELECTRICAL AND THERMAL CHARACTERISTICS 20 10 10 0 5 0 0 25 50 75 100 125 150 175 0 TCASE (°C) Figure 12: Power De-rating (Note F) 25 50 75 100 125 150 175 TCASE (°C) Figure 13: Current De-rating (Note F) 10000 TA=25°C Power (W) 1000 100 10 1 1E-05 0.001 0.1 10 1000 ZθJA Normalized Transient Thermal Resistance Pulse Width (s) Figure 14: Single Pulse Power Rating Junction-to-Ambient (Note H) 10 1 In descending order D=0.5, 0.3, 0.1, 0.05, 0.02, 0.01, single pulse D=Ton/T TJ,PK=TA+PDM.ZθJA.RθJA RθJA=55°C/W 0.1 0.01 Single Pulse PDM 0.001 0.0001 0.0001 Ton 0.001 0.01 0.1 1 10 T 100 1000 Pulse Width (s) Figure 15: Normalized Maximum Transient Thermal Impedance (Note H) Rev.1.0: November 2014 www.aosmd.com Page 5 of 6 Gate Charge Test Circuit & Waveform Vgs Qg 10V + + Vds VDC - Qgs Qgd VDC - DUT Vgs Ig Charge Resistive Switching Test Circuit & Waveforms RL Vds Vds DUT Vgs 90% + Vdd VDC - Rg 10% Vgs Vgs td(on) tr td(off) ton tf toff Unclamped Inductive Switching (UIS) Test Circuit & Waveforms L 2 EAR= 1/2 LIAR Vds BVDSS Vds Id + Vdd Vgs Vgs I AR VDC - Rg Id DUT Vgs Vgs Diode Recovery Test Circuit & Waveforms Q rr = - Idt Vds + DUT Vds - Isd Vgs Ig Rev.1.0: November 2014 Vgs L Isd + Vdd t rr dI/dt I RM Vdd VDC - IF Vds www.aosmd.com Page 6 of 6