Datasheet

AOD9N40
400V,8A N-Channel MOSFET
General Description
Product Summary
The AOD9N40 is fabricated using an advanced high
voltage MOSFET process that is designed to deliver high
levels of performance and robustness in popular AC -DC
applications.By providing low RDS(on), Ciss and Crss along
with guaranteed avalanche capability this device can be
adopted quickly into new and existing offline power supply
designs.This device is ideal for boost converters and
synchronous rectifiers for consumer, telecom, industrial
power supplies and LED backlighting.
500V@150℃
VDS
ID (at VGS=10V)
8A
<0.8Ω
RDS(ON) (at VGS=10V)
100% UIS Tested!
100% Rg Tested!
TO252
DPAK
Top View
D
Bottom View
D
D
G
G
S
S
S
G
Absolute Maximum Ratings TA=25°C unless otherwise noted
Symbol
Parameter
VDS
Drain-Source Voltage
VGS
Gate-Source Voltage
TC=25°C
Continuous Drain
B
Current
TC=100°C
Pulsed Drain Current
C
Maximum
400
Units
V
±30
V
8
ID
5
A
IDM
22
IAR
3.2
EAR
150
mJ
Single pulsed avalanche energy
Peak diode recovery dv/dt
TC=25°C
Power Dissipation B Derate above 25 oC
EAS
dv/dt
300
5
125
mJ
V/ns
W
Junction and Storage Temperature Range
Maximum lead temperature for soldering
purpose, 1/8" from case for 5 seconds
TJ, TSTG
1
-50 to 150
W/ C
°C
300
°C
Avalanche Current
C
Repetitive avalanche energy
C
H
Thermal Characteristics
Parameter
Maximum Junction-to-Ambient
A
Maximum Case-to-sink
Maximum Junction-to-Case D,F
Rev0: Dec 2010
A,G
PD
TL
Symbol
RθJA
RθCS
RθJC
A
o
Typical
45
Maximum
55
Units
°C/W
0.7
0.5
1
°C/W
°C/W
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Page 1 of 6
AOD9N40
Electrical Characteristics (TJ=25°C unless otherwise noted)
Symbol
Parameter
Conditions
Min
ID=250µA, VGS=0V, TJ=25°C
400
Typ
Max
Units
STATIC PARAMETERS
BVDSS
Drain-Source Breakdown Voltage
BVDSS
/∆TJ
Zero Gate Voltage Drain Current
IDSS
Zero Gate Voltage Drain Current
IGSS
Gate-Body leakage current
VDS=0V, VGS=±30V
VGS(th)
RDS(ON)
Gate Threshold Voltage
Static Drain-Source On-Resistance
VDS=5V ID=250µA
gFS
Forward Transconductance
VSD
Diode Forward Voltage
IS=1A,VGS=0V
IS
Maximum Body-Diode Continuous Current
Maximum Body-Diode Pulsed Current
ISM
ID=250µA, VGS=0V, TJ=150°C
500
V
ID=250µA, VGS=0V
0.4
o
V/ C
VDS=400V, VGS=0V
1
VDS=320V, TJ=125°C
10
Output Capacitance
Crss
Reverse Transfer Capacitance
Rg
Gate resistance
SWITCHING PARAMETERS
Qg
Total Gate Charge
Qgs
Gate Source Charge
±100
4
4.5
nΑ
V
VGS=10V, ID=4A
0.64
0.8
Ω
VDS=40V, ID=4A
8
1
V
DYNAMIC PARAMETERS
Ciss
Input Capacitance
Coss
µA
3.4
0.75
8
A
22
A
630
760
pF
45
73
100
pF
2
5.7
9
pF
1.2
2.6
4.0
Ω
10
13.1
16
nC
500
VGS=0V, VDS=25V, f=1MHz
VGS=0V, VDS=0V, f=1MHz
S
VGS=10V, VDS=320V, ID=8A
3.9
nC
Qgd
Gate Drain Charge
4.8
nC
tD(on)
Turn-On DelayTime
17
ns
52
ns
25
ns
tr
Turn-On Rise Time
tD(off)
Turn-Off DelayTime
tf
Turn-Off Fall Time
trr
Qrr
VGS=10V, VDS=200V, ID=8A,
RG=25Ω
30
IF=8A,dI/dt=100A/µs,VDS=100V
Body Diode Reverse Recovery Time
Body Diode Reverse Recovery Charge IF=8A,dI/dt=100A/µs,VDS=100V
ns
150
195
240
1.5
1.9
2.3
ns
µC
A. The value of R θJA is measured with the device in a still air environment with T A =25°C.
B. The power dissipation P D is based on T J(MAX)=150°C in a TO252 package, using junction-to-case thermal resistance, and is more useful in setting
the upper dissipation limit for cases where additional heatsinking is used.
C. Repetitive rating, pulse width limited by junction temperature T J(MAX)=150°C.
D. The R θJA is the sum of the thermal impedence from junction to case R θJC and case to ambient.
E. The static characteristics in Figures 1 to 6 are obtained using <300 µs pulses, duty cycle 0.5% max.
F. These curves are based on the junction-to-case thermal impedence which is measured with the device mounted to a large heatsink, assuming a
maximum junction temperature of T J(MAX)=150°C.
G.These tests are performed with the device mounted on 1 in 2 FR-4 board with 2oz. Copper, in a still air environment with T A=25°C.
H. L=60mH, IAS=3.2A, VDD=150V, RG=10Ω, Starting T J=25°C
THIS PRODUCT HAS BEEN DESIGNED AND QUALIFIED FOR THE CONSUMER MARKET. APPLICATIONS OR USES AS CRITICAL
COMPONENTS IN LIFE SUPPORT DEVICES OR SYSTEMS ARE NOT AUTHORIZED. AOS DOES NOT ASSUME ANY LIABILITY ARISING
OUT OF SUCH APPLICATIONS OR USES OF ITS PRODUCTS. AOS RESERVES THE RIGHT TO IMPROVE PRODUCT DESIGN,
FUNCTIONS AND RELIABILITY WITHOUT NOTICE.
Rev0: Dec 2010
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Page 2 of 6
AOD9N40
TYPICAL ELECTRICAL AND THERMAL CHARACTERISTICS
16
100
VDS=40V
10V
-55°C
12
6.5V
8
ID(A)
ID (A)
10
6V
125°C
1
4
VGS=5.5V
25°C
0.1
0
0
5
10
15
20
25
2
30
4
2.0
3
1.6
2.5
Normalized On-Resistance
RDS(ON) (Ω)
VDS (Volts)
Fig 1: On-Region Characteristics
VGS=10V
1.2
6
8
10
VGS(Volts)
Figure 2: Transfer Characteristics
0.8
0.4
VGS=10V
ID=4A
2
1.5
1
0.5
0.0
0
3
6
9
12
15
0
-100
18
ID (A)
Figure 3: On-Resistance vs. Drain Current and Gate
Voltage
-50
0
50
100
150
200
Temperature (°C)
Figure 4: On-Resistance vs. Junction Temperature
1.2
1.0E+02
ID=30A
40
1.0E+00
1
IS (A)
BVDSS (Normalized)
1.0E+01
1.1
125°C
125°C
25°C
1.0E-01
1.0E-02
0.9
25°C
0.8
-100
1.0E-03
1.0E-04
50
100
150
200
TJ (oC)
Figure 5: Break Down vs. Junction Temperature
Rev0: Dec 2010
-50
0
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0.2
0.4
0.6
0.8
1.0
VSD (Volts)
Figure 6: Body-Diode Characteristics
Page 3 of 6
AOD9N40
TYPICAL ELECTRICAL AND THERMAL CHARACTERISTICS
15
10000
Capacitance (pF)
VGS (Volts)
Ciss
VDS=320V
ID=8A
12
9
6
1000
Coss
100
Crss
10
3
0
1
0
4
8
12
16
20
0.1
Qg (nC)
Figure 7: Gate-Charge Characteristics
100
10µs
RDS(ON)
limited
100µs
100
1ms
1
DC
TJ(Max)=150°C
TC=25°C
0.1
10ms
10
100
400
200
0.01
1
TJ(Max)=150°C
TC=25°C
600
Power (W)
ID (Amps)
10
VDS (Volts)
Figure 8: Capacitance Characteristics
800
10
1000
0
0.0001
VDS (Volts)
10
1
0.001
0.01
0.1
1
10
Pulse Width (s)
Figure 10: Single Pulse Power Rating Junction-toCase (Note F)
Figure 9: Maximum Forward Biased Safe
Operating Area (Note F)
ZθJC Normalized Transient
Thermal Resistance
1
D=Ton/T
TJ,PK=TC+PDM.ZθJC.RθJC
RθJC=1°C/W
In descending order
D=0.5, 0.3, 0.1, 0.05, 0.02, 0.01, single pulse
0.1
PD
0.01
0.001
0.000001
Single Pulse
0.00001
0.0001
Ton
0.001
0.01
T
0.1
1
10
Pulse Width (s)
Figure 11: Normalized Maximum Transient Thermal Impedance (Note F)
Rev0: Dec 2010
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Page 4 of 6
AOD9N40
150
10
120
8
Current rating ID(A)
Power Dissipation (W)
TYPICAL ELECTRICAL AND THERMAL CHARACTERISTICS
90
60
30
0
6
4
2
0
0
25
50
75
100
125
150
0
TCASE (°C)
Figure 12: Power De-rating (Note B)
25
50
75
100
125
150
TCASE (°C)
Figure 13: Current De-rating (Note B)
400
TA=25°C
Power (W)
300
200
100
0
0.01
0.1
1
10
100
Pulse Width (s)
Figure 14: Single Pulse Power Rating Junction-to-Ambient (Note G)
1000
ZθJA Normalized Transient
Thermal Resistance
10
1
In descending order
D=0.5, 0.3, 0.1, 0.05, 0.02, 0.01, single pulse
D=Ton/T
TJ,PK=TA+PDM.ZθJA.RθJA
RθJA=55°C/W
0.1
0.01
PD
0.001
Ton
Single Pulse
0.0001
0.0001
0.001
0.01
0.1
1
10
T
100
1000
10000
Pulse Width (s)
Figure 15: Normalized Maximum Transient Thermal Impedance (Note G)
Rev0: Dec 2010
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Page 5 of 6
AOD9N40
Gate Charge Test Circuit & Waveform
Vgs
Qg
10V
+
+ Vds
VDC
-
VDC
DUT
Qgs
Qgd
-
Vgs
Ig
Charge
Res istive Switching Test Circuit & Waveforms
RL
Vds
Vds
DUT
Vgs
Rg
+
VDC
90%
Vdd
-
10%
Vgs
Vgs
t d(on)
tr
t d(off)
t on
tf
t off
Unclamped Inductive Switching (UIS) Test Circuit & Waveforms
L
EAR= 1/2 LI
Vds
2
AR
BVDSS
Vds
Id
+
Vgs
Vgs
VDC
Rg
-
Vdd
I AR
Id
DUT
Vgs
Vgs
Diode Recovery Tes t Circuit & Waveforms
Qrr = - Idt
Vds +
DUT
Vds -
Isd
Vgs
Ig
Rev0: Dec 2010
Vgs
Isd
L
+ Vdd
VDC
-
IF
trr
dI/dt
IRM
Vds
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Vdd
Page 6 of 6