Datasheet

AOC2403
20V P-Channel MOSFET
General Description
Product Summary
The AOC2403 uses advanced trench technology to provide
excellent RDS(ON), low gate charge and operation with gate
voltages as low as 1.5V while retaining a 8V VGS(MAX) rating.
Vds
ID (at VGS=-4.5V)
-20V
-1.8A
RDS(ON) (at VGS=-4.5V)
< 95mΩ
RDS(ON) (at VGS=-2.5V)
< 115mΩ
RDS(ON) (at VGS=-1.8V)
< 150mΩ
RDS(ON) (at VGS=-1.5V)
< 200mΩ
AlphaDFN 0.97x0.97_4
Bottom View
3
Equivalent Circuit
Top View
D
2
S
S
D
G
4
Pin1(G)
1
G
S
Absolute Maximum Ratings TA=25°C unless otherwise noted
Parameter
Symbol
Drain-Source Voltage
VDS
Gate-Source Voltage
Source Current (DC)
VGS
Note1
Units
V
±8
V
ID
-1.8
Source Current (Pulse) Note2
IDM
-20
Power Dissipation Note1 T =25°C
A
PD
0.45
Junction and Storage Temperature Range
Note 1. Mounted on minimum pad PCB
Note 2. PW <300 µs pulses, duty cycle 0.5% max
TJ, TSTG
Rev.1.0 : December 2013
TA=25°C
Maximum
-20
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-55 to 150
A
W
°C
Page 1 of 5
AOC2403
Electrical Characteristics (TJ=25°C unless otherwise noted)
Symbol
Parameter
STATIC PARAMETERS
BVDSS
Source-Source Breakdown Voltage
Conditions
Min
ID=-250µA, VGS=0V
-20
Zero Gate Voltage Source Current
IGSS
Gate leakage current
VDS=0V, VGS=±8V
VGS(th)
Gate Threshold Voltage
VDS=VGS, ID=-250µA
TJ=55°C
TJ=125°C
gFS
VFSD
95
132
VGS=-2.5V, ID=-1A
91
115
VGS=-1.8V, ID=-0.5A
107
150
VGS=-1.5V, ID=-0.5A
130
200
Diode Forward Voltage
ID=-1A,VGS=0V,
-0.73
DYNAMIC PARAMETERS
Input Capacitance
Ciss
Reverse Transfer Capacitance
Rg
Gate resistance
V
76
7
Crss
nA
-1
105
VDS=-5V, ID=-1A
Output Capacitance
±100
-0.65
Forward Transconductance
Coss
µA
-5
-0.3
VGS=0V, VDS=-10V, f=1MHz,
VGS=0V, VDS=0V, f=1MHz
SWITCHING PARAMETERS
Total Gate Charge
Qg
VGS=-4.5V, VDS=-10V, ID=-1A
mΩ
S
-1
V
405
pF
75
pF
45
pF
26
Ω
4.8
nC
0.8
nC
nC
Qgs
Gate Source Charge
Qgd
Gate Drain Charge
1
tD(on)
Turn-On DelayTime
7.5
tr
Turn-On Rise Time
tD(off)
Turn-Off DelayTime
tf
trr
Turn-Off Fall Time
Body Diode Reverse Recovery Time
IF=-1A, dI/dt=100A/µs
22
Qrr
Body Diode Reverse Recovery Charge
IF=-1A, dI/dt=100A/µs
8.5
VGS=-4.5V, VDS=-10V, RL=10Ω,
ID=-1A, RGEN=6Ω
Units
V
-1
VGS=-4.5V, ID=-1A
Static Source to Source On-Resistance
Max
VDS=-20V, VGS=0V
IDSS
RDS(ON)
Typ
8.5
95
ns
30
ns
nC
THIS PRODUCT HAS BEEN DESIGNED AND QUALIFIED FOR THE CONSUMER MARKET. APPLICATIONS OR USES AS CRITICAL
COMPONENTS IN LIFE SUPPORT DEVICES OR SYSTEMS ARE NOT AUTHORIZED. AOS DOES NOT ASSUME ANY LIABILITY ARISING
OUT OF SUCH APPLICATIONS OR USES OF ITS PRODUCTS. AOS RESERVES THE RIGHT TO IMPROVE PRODUCT DESIGN,
FUNCTIONS AND RELIABILITY WITHOUT NOTICE
Rev.1.0 : December 2013
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Page 2 of 5
AOC2403
TYPICAL ELECTRICAL AND THERMAL CHARACTERISTICS
20
20
-10V
-7V
VDS=-5V
-4.5V
15
10
-ID(A)
-ID (A)
15
-1.8V
125°C
10
5
5
25°C
VGS=-1.5V
0
0
0
1
2
3
4
5
0
0.5
1
1.5
2
2.5
3
-VGS(Volts)
Figure 2: Transfer Characteristics
-VDS (Volts)
Fig 1: On-Region Characteristics
200
1.6
RDS(ON) (mΩ
Ω)
150
Normalized On-Resistance
VGS=-1.5V
175
VGS=-1.8V
125
VGS=-2.5V
100
75
VGS=-4.5V
ID=-1A
1.4
VGS=-2.5V
ID=-1A
1.2
VGS=-1.5V
ID=-0.5A
VGS=-1.8V
ID=-0.5A
1
VGS=-4.5V
50
0.8
0
2
4
6
8
10
0
-ID (A)
Figure 3: On-Resistance vs. Drain Current and Gate
Voltage
25
50
75
100
125
150
175
Temperature (°C)
Figure 4: On-Resistance vs. Junction Temperature
1.0E+01
200
ID=-1A
1.0E+00
175
125°C
125
-IS (A)
RDS(ON) (mΩ
Ω)
125°C
1.0E-01
150
1.0E-02
1.0E-03
100
25°C
1.0E-04
75
1.0E-05
25°C
50
1.0E-06
0
2
4
6
8
0.0
-VGS (Volts)
Figure 5: On-Resistance vs. Gate-Source Voltage
Rev.1.0 : December 2013
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0.2
0.4
0.6
0.8
-VSD (Volts)
Figure 6: Body-Diode Characteristics
1.0
Page 3 of 5
AOC2403
TYPICAL ELECTRICAL AND THERMAL CHARACTERISTICS
5
600
VDS=-10V
ID=-1A
500
Ciss
Capacitance (pF)
-VGS (Volts)
4
3
2
400
300
200
Coss
1
100
0
Crss
0
0
1
2
3
4
5
Qg (nC)
Figure 7: Gate-Charge Characteristics
6
0
100.0
5
10
15
-VDS (Volts)
Figure 8: Capacitance Characteristics
20
50
TJ(Max)=150°C
TA=25°C
100µs
10.0
40
1ms
1.0
Power (W)
-ID (Amps)
RDS(ON)
limited
10ms
0.1
100ms
1s
10s
DC
TJ(Max)=150°C
TC=25°C
0.0
30
20
10
0
0.01
0.1
1
10
100
0.001
-VDS (Volts)
0.01
0.1
1
10
100
1000
10000
Pulse Width (s)
Figure 10: Single Pulse Power Rating Junction-toAmbient
Figure 9: Maximum Forward Biased Safe
Operating Area
Zθ JA Normalized Transient
Thermal Resistance
10
1
In descending order
D=0.5, 0.3, 0.1, 0.05, 0.02, 0.01, single pulse
D=Ton/(Ton+T)
TJ,PK=TA+PD.ZθJA.RθJA
RθJA=155°C/W
0.1
PD
0.01
Single Pulse
Ton
T
0.001
1E-05
0.0001
Rev.1.0 : December 2013
0.001
0.01
0.1
1
Pulse Width (s)
Figure 11: Normalized Maximum Transient Thermal Impedance
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10
100
Page 4 of 5
1000