datasheet

SK25GD126ET
# , -. /0 Absolute Maximum Ratings
Symbol Conditions
IGBT
123
#4 , -. /
%
#4 , 6.7 /
%:;
6-77
1
8-
'
# , 97 /
-8
'
.7
'
< -7
1
#4 , 6-. /
67
A
# , -. /
-9
'
# , 97 /
6B
'
.7
'
%:;, - %
1 , =77 1> 1&2 ? -7 1>
123 @ 6-77 1
Units
# , -. /
1&23
SEMITOP® 3
Values
Inverse Diode
IGBT Module
%)
#4 , 6.7 /
%):;
SK25GD126ET
%):;, - %)
Module
%:;3
Preliminary Data
#+4
CD7 EEE F6.7
/
#
CD7 EEE F6-.
/
-.77
1
1
Features
!"# $ %&#
'( $ )*
% !# Typical Applications*
%+
'
'0 6 E
# , -. /0 Characteristics
Symbol Conditions
IGBT
1&2
1&2 , 120 % , 6 '
%23
1&2 , 7 10 12 , 123
%&23
12 , 7 10 1&2 , -7 1
min.
typ.
.
.09
#4 , -. /
max.
=0.
1
706.
'
#4 , 6-. /
'
#4 , -. /
=77
#4 , 6-. /
127
2
12
1&2 , 6. 1
% , -. '0 1&2 , 6. 1
12 , -.0 1&2 , 7 1
:& , -. G
:& , -. G
2
:4C
%&#
'
'
#4 , -. /
6
#4 , 6-. /
70B
#4 , -./
-9
#4 , 6-./
DD
#4 , -./
+E
60H
#4 , 6-./
+E
-0-
1
609
707B.
)
)
7079-
)
9.
87
808
D87
B7
J
806
J
, 6 ;I
2
Units
1 , =771
%, -.'
#4 , 6-. /
1&2,<6.1
60-
1
8=
G
1
G
-06
60-
1
KL*
GD-ET
1
21-02-2007 SCT
© by SEMIKRON
SK25GD126ET
Characteristics
Symbol Conditions
Inverse Diode
1) , 12
%) , -. '> 1&2 , 7 1
1)7
)
®
SEMITOP 3
IGBT Module
SK25GD126ET
%::;
M
%) , -. '
L , CB.7 'LA
2
1, =771
:4C
;
N
min.
typ.
#4 , -. /
+E
609
#4 , 6-. /
+E
609
max.
Units
1
1
#4 , -. /
6
#4 , 6-. /
709
#4 , -. /
8-
#4 , 6-. /
D7
G
#4 , 6-. /
86
.
'
A
-06
J
-0-.
606
1
1
D-
G
60B
KL*
-0.
!
87
DB8<.O
G
Temperature sensor
:677
# ,677/ :-.,.NG
Preliminary Data
Features
!"# $ %&#
'( $ )*
% !# This is an electrostatic discharge sensitive device (ESDS), international standard
IEC 60747-1, Chapter IX.
* The specifications of our components may not be considered as an assurance of
component characteristics. Components have to be tested for the respective
application. Adjustments may be necessary. The use of SEMIKRON products in
life support appliances and systems is subject to prior specification and written
approval by SEMIKRON. We therefore strongly recommend prior consultation of
our personal.
Typical Applications*
%+
GD-ET
2
21-02-2007 SCT
© by SEMIKRON
SK25GD126ET
Fig. 1 Typ. output characteristic, inclusive RCC'+ EE'
Fig. 3 Typ. turn-on /-off energy = f (IC)
Fig. 4 Typ. turn-on /-off energy = f (RG)
Fig. 6 Typ. gate charge characteristic
3
21-02-2007 SCT
© by SEMIKRON
SK25GD126ET
Fig. 7 Typ. switching times vs. IC
Fig. 8 Typ. switching times vs. gate resistor RG
Fig. 10 CAL diode forward characteristic
4
21-02-2007 SCT
© by SEMIKRON
SK25GD126ET
UL recognized file
no. E 63 532
#.- 3 0 "0 P -
# .-
5
&C2#
21-02-2007 SCT
© by SEMIKRON