SK10GD126ET

SK10GD126ET
# , -. /0 Absolute Maximum Ratings
Symbol Conditions
IGBT
123
#4 , -. /
%
#4 , 6.7 /
%9:
6-77
1
6.
'
# , 87 /
66
'
6;
'
< -7
1
#4 , 6-. /
67
@
# , -. /
-.
'
# , 87 /
6A
'
B7
'
%9:, - %
1 , ;77 1= 1&2 > -7 1=
123 ? 6-77 1
Units
# , -. /
1&23
SEMITOP® 3
Values
Inverse Diode
IGBT Module
%)
#4 , 6.7 /
%)9:
SK10GD126ET
%)9:, - %)
Module
%9:3
Preliminary Data
#+4
CD7 EEE F6.7
/
#
CD7 EEE F6-.
/
-.77
1
1
Features
!"# $ %&#
'( $ )*
% !# Typical Applications*
%+
'
'0 6 E
# , -. /0 Characteristics
Symbol Conditions
IGBT
1&2
1&2 , 120 % , 70B '
%23
1&2 , 7 10 12 , 123
%&23
12 , 7 10 1&2 , -7 1
min.
typ.
.
.08
#4 , -. /
max.
;0.
1
707.
'
#4 , 6-. /
'
#4 , -. /
6-7
#4 , 6-. /
127
2
12
1&2 , 6. 1
% , 8 '0 1&2 , 6. 1
12 , -.0 1&2 , 7 1
9& , A. H
9& , A. H
2
94C
%&#
'
'
#4 , -. /
6
#4 , 6-. /
70G
#4 , -./
8A
#4 , 6-./
6B8
#4 , -./
+E
60A
#4 , 6-./
+E
-0-
1
70;
707BA
)
)
707-G
)
8.
B7
6
DB7
G7
J
6
J
, 6 :I
2
Units
1 , ;771
%, 8'
#4 , 6-. /
1&2,<6.1
60-
1
66B
H
1
H
-06
-
1
KL*
GD-ET
1
21-02-2007 SCT
© by SEMIKRON
SK10GD126ET
Characteristics
Symbol Conditions
Inverse Diode
1) , 12
%) , 8 '= 1&2 , 7 1
1)7
)
®
SEMITOP 3
IGBT Module
SK10GD126ET
%99:
M
%) , 6. '
L , CB77 'L@
2
1, ;771
94C
:
N
min.
typ.
max.
Units
#4 , -. /
+E
60G
-0-
1
#4 , 6-. /
+E
-
#4 , -. /
6
606
1
#4 , 6-. /
708
70G
1
#4 , -. /
D7
DA
H
#4 , 6-. /
.B
H
#4 , 6-. /
-6
B0.
'
@
60D
J
-0-.
1
-06
KL*
-0.
!
B7
DGB<.O
H
Temperature sensor
9677
# ,677/ 9-.,.NH
Preliminary Data
Features
!"# $ %&#
'( $ )*
% !# This is an electrostatic discharge sensitive device (ESDS), international standard
IEC 60747-1, Chapter IX.
* The specifications of our components may not be considered as an assurance of
component characteristics. Components have to be tested for the respective
application. Adjustments may be necessary. The use of SEMIKRON products in
life support appliances and systems is subject to prior specification and written
approval by SEMIKRON. We therefore strongly recommend prior consultation of
our staff.
Typical Applications*
%+
GD-ET
2
21-02-2007 SCT
© by SEMIKRON
SK10GD126ET
Fig. 1 Typ. output characteristic, inclusive RCC'+ EE'
Fig. 3 Typ. turn-on /-off energy = f (IC)
Fig. 4 Typ. turn-on /-off energy = f (RG)
Fig. 6 Typ. gate charge characteristic
3
21-02-2007 SCT
© by SEMIKRON
SK10GD126ET
Fig. 7 Typ. switching times vs. IC
Fig. 8 Typ. switching times vs. gate resistor RG
Fig. 10 CAL diode forward characteristic
4
21-02-2007 SCT
© by SEMIKRON
SK10GD126ET
UL recognized file
no. E 63 532
#.- 3 0 "0 P -
# .-
5
&C2#
21-02-2007 SCT
© by SEMIKRON