SK10GD126ET # , -. /0 Absolute Maximum Ratings Symbol Conditions IGBT 123 #4 , -. / % #4 , 6.7 / %9: 6-77 1 6. ' # , 87 / 66 ' 6; ' < -7 1 #4 , 6-. / 67 @ # , -. / -. ' # , 87 / 6A ' B7 ' %9:, - % 1 , ;77 1= 1&2 > -7 1= 123 ? 6-77 1 Units # , -. / 1&23 SEMITOP® 3 Values Inverse Diode IGBT Module %) #4 , 6.7 / %)9: SK10GD126ET %)9:, - %) Module %9:3 Preliminary Data #+4 CD7 EEE F6.7 / # CD7 EEE F6-. / -.77 1 1 Features !"# $ %&# '( $ )* % !# Typical Applications* %+ ' '0 6 E # , -. /0 Characteristics Symbol Conditions IGBT 1&2 1&2 , 120 % , 70B ' %23 1&2 , 7 10 12 , 123 %&23 12 , 7 10 1&2 , -7 1 min. typ. . .08 #4 , -. / max. ;0. 1 707. ' #4 , 6-. / ' #4 , -. / 6-7 #4 , 6-. / 127 2 12 1&2 , 6. 1 % , 8 '0 1&2 , 6. 1 12 , -.0 1&2 , 7 1 9& , A. H 9& , A. H 2 94C %&# ' ' #4 , -. / 6 #4 , 6-. / 70G #4 , -./ 8A #4 , 6-./ 6B8 #4 , -./ +E 60A #4 , 6-./ +E -0- 1 70; 707BA ) ) 707-G ) 8. B7 6 DB7 G7 J 6 J , 6 :I 2 Units 1 , ;771 %, 8' #4 , 6-. / 1&2,<6.1 60- 1 66B H 1 H -06 - 1 KL* GD-ET 1 21-02-2007 SCT © by SEMIKRON SK10GD126ET Characteristics Symbol Conditions Inverse Diode 1) , 12 %) , 8 '= 1&2 , 7 1 1)7 ) ® SEMITOP 3 IGBT Module SK10GD126ET %99: M %) , 6. ' L , CB77 'L@ 2 1, ;771 94C : N min. typ. max. Units #4 , -. / +E 60G -0- 1 #4 , 6-. / +E - #4 , -. / 6 606 1 #4 , 6-. / 708 70G 1 #4 , -. / D7 DA H #4 , 6-. / .B H #4 , 6-. / -6 B0. ' @ 60D J -0-. 1 -06 KL* -0. ! B7 DGB<.O H Temperature sensor 9677 # ,677/ 9-.,.NH Preliminary Data Features !"# $ %&# '( $ )* % !# This is an electrostatic discharge sensitive device (ESDS), international standard IEC 60747-1, Chapter IX. * The specifications of our components may not be considered as an assurance of component characteristics. Components have to be tested for the respective application. Adjustments may be necessary. The use of SEMIKRON products in life support appliances and systems is subject to prior specification and written approval by SEMIKRON. We therefore strongly recommend prior consultation of our staff. Typical Applications* %+ GD-ET 2 21-02-2007 SCT © by SEMIKRON SK10GD126ET Fig. 1 Typ. output characteristic, inclusive RCC'+ EE' Fig. 3 Typ. turn-on /-off energy = f (IC) Fig. 4 Typ. turn-on /-off energy = f (RG) Fig. 6 Typ. gate charge characteristic 3 21-02-2007 SCT © by SEMIKRON SK10GD126ET Fig. 7 Typ. switching times vs. IC Fig. 8 Typ. switching times vs. gate resistor RG Fig. 10 CAL diode forward characteristic 4 21-02-2007 SCT © by SEMIKRON SK10GD126ET UL recognized file no. E 63 532 #.- 3 0 "0 P - # .- 5 &C2# 21-02-2007 SCT © by SEMIKRON