SK30GB128

SK30GB128
" # *+ ,% Absolute Maximum Ratings
Symbol Conditions
IGBT
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SK30GAL128
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SK30GAR128
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Preliminary Data
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% & Typical Applications*
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" # *+ ,% Characteristics
Symbol Conditions
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08-03-2007 SCT
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Features
Units
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SEMITOP® 2
Values
0
HIJ
© by SEMIKRON
SK30GB128
Characteristics
Symbol Conditions
Inverse Diode
$> # $-
SEMITOP® 2
IGBT Module
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min.
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Freewheeling Diode
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SK30GB128
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SK30GAL128
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Preliminary Data
Features
!"# !
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$
% & Typical Applications*
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GB
2
GAL
6
3
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0%*
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L 60
*
M
0E
This is an electrostatic discharge sensitive device (ESDS), international standard
IEC 60747-1, Chapter IX.
* The specifications of our components may not be considered as an assurance of
component characteristics. Components have to be tested for the respective
application. Adjustments may be necessary. The use of SEMIKRON products in
life support appliances and systems is subject to prior specification and written
approval by SEMIKRON. We therefore strongly recommend prior consultation of
our staff.
GAR
08-03-2007 SCT
© by SEMIKRON
SK30GB128
Fig. 1 Typ. output characteristic, inclusive RCC'+ EE'
Fig. 3 Typ. turn-on /-off energy = f (IC)
Fig. 4 Typ. turn-on /-off energy = f (RG)
Fig. 6 Typ. gate charge characteristic
3
08-03-2007 SCT
© by SEMIKRON
SK30GB128
Fig. 7 Typ. switching times vs. IC
Fig. 8 Typ. switching times vs. gate resistor RG
Fig. 10 CAL diode forward characteristic
4
08-03-2007 SCT
© by SEMIKRON
SK30GB128
UL recognized file
no. E 63 532
"4 % !% N *'
"4
5
7
"4
08-03-2007 SCT
73O
"4
735
© by SEMIKRON