SKM 200 GARL 066 T
Absolute Maximum Ratings
Symbol Conditions
IGBT
2 () *
!
2 '9) *
()*, "
8//
(:/
;
:/ *
('/
;
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;
= (/
2 ')/ *
8
B
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;
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(/
;
./
;
2 ')/ *
C)
;
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;
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;
2
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*
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*
()//
!&<(+!
5
Trench IGBT Modules
SKM 200 GARL 066 T
Units
() *
!&<
SEMITRANS® 5
Values
>8/ ? 5 @ ') ?
A 8// Inverse Diode
!4
2 '9) *
!4&<
!4&<(+!4
!4<
'/ ? Freewheeling Diode
!4
2 '9) *
!4&<
!4&<(+!4
!4<
'/ ? 2 ')/ *
Module
Features
!
" # Typical Applications*
$%
!#&&
Remarks
" '()* +, "" -./001')/*
&
"" -./001')/*
2 "" 3
+ 40( " !56 3
!&<
;, ' 0
Characteristics
Symbol Conditions
IGBT
()*, "
5
5 , ! >,( ;
!
5 / , 2 () *
!5
/ , 5 (/ 2 () *
/
5 ') 5 -:0001')
&5
2 () *
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' D
"H" '9// ;HB
&5 ' D
"H" (/// ;HB
&2-
!56
Units
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8,)
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0,5
;
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;
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2 ')/ *
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/,:
2 ()*
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.,)
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)
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',9
(,'
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F5
max.
/,C
!
(// ;, 5 ') 2 ()*0
(), 5 / typ.
2 () *
2 ')/*0
min.
>//
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2 ')/ *
5 -:H1')
'(,>
/,98
4
4
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4
(().
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G
C>
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(,(.
>'9
'/(
I
9,:C
I
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JHK
GARL-T
1
18-06-2012
11-09-2012 DIL
© by SEMIKRON
SKM 200 GARL 066 T
Characteristics
Symbol Conditions
Inverse Diode
4 !4
(/ ;? 5 / 4/
4
SEMITRANS® 5
Trench IGBT Modules
SKM 200 GARL 066 T
!&&<
F
!4 (/ ;
5 -: ? >// &2-L
""
!
" # Typical Applications*
$%
!#&&
Remarks
" '()* +, "" -./001')/*
&
"" -./001')/*
2 "" 3
+ 40( " !56 3
typ.
max.
Units
2 () *0
',.)
',9
2 ')/ *0
',.)
',9
2 () *
'
','
2 ')/ *
/,C
'
2 () *
((,)
>/
D
2 ')/ *
(9,)
>)
D
2 ')/ *
;
B
I
>
JHK
Free-wheeling diode
4 !4
(// ;? 5 / 4/
4
Features
min.
!&&<
F
!4 (// ;
"H" (/// ;HB
5 -')H1') ? &2-4L
""
&-
"
<
M <8
<
<8
2 () *0
',.
',8
2 ')/ *0
',>
',.)
2 () *
/,C)
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2 ')/ *
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2 () *
(,(
>
2 ')/ *
(,'
(,9
2 ')/ *
'9),:
'(
;
B
.
I
/,>C
JHK
>// /,/>:
JHK
>
)
#
(,)
)
#
>'/
Temperature sensor
&'//
'//* &())MD
.C>=)N
D
J
This is an electrostatic discharge sensitive device (ESDS), international standard
IEC 60747-1, Chapter IX.
* The specifications of our components may not be considered as an assurance of
component characteristics. Components have to be tested for the respective
application. Adjustments may be necessary. The use of SEMIKRON products in
life support appliances and systems is subject to prior specification and written
approval by SEMIKRON. We therefore strongly recommend prior consultation of
our staff.
GARL-T
2
11-09-2012 DIL
18-06-2012
© by SEMIKRON
SKM 200 GARL 066 T
Fig. 1 Typ. output characteristic, inclusive RCC'+ EE'
Fig. 2 Rated current vs. temperature IC = f (TC)
Fig. 3 Typ. turn-on /-off energy = f (IC)
Fig. 4 Typ. turn-on /-off energy = f (RG)
Fig. 6 Typ. gate charge characteristic
3
11-09-2012 DIL
18-06-2012
© by SEMIKRON
SKM 200 GARL 066 T
Fig. 7 Typ. switching times vs. IC
Fig. 8 Typ. switching times vs. gate resistor RG
Fig. 10 CAL diode forward characteristic
4
18-06-2012 DIL
11-09-2012
© by SEMIKRON
SKM 200 GARL 066 T
UL recognized
file no. E 63 532
L8'
5;&O-
5
L8'
11-09-2012 DIL
18-06-2012
© by SEMIKRON