SK 55 GARL 065 E
Absolute Maximum Ratings
Symbol Conditions
IGBT
23(
2%3(
$
$+
# - ./ 01 # - ./ 85 09
< = 9 # - ./ 85 09
#>
Values
Units
455
6 .5
/: :5
=58 85
2
2
;
;
! :5 ??? @ =/5
0
4: :8
=.: A4
;
;
! :5 ??? @ =/5
0
Freewheeling CAL diode
®
SEMITOP 3
IGBT Module
SK 55 GARL 065 E
Preliminary Data
Features
!
"#! ! $%#
&
' Typical Applications
(
(
)"(
"*
+, $,
$*
$*+ - ! $+
# - ./ 85 09
< = 9 # - ./ 85 09
#>
#
#
#1 =5 ! :5 ??? @ =./
.45
0
0
2
; /5 B1 ??? = ? C = ./55 C D555
2
Characteristics
Symbol Conditions
IGBT
23
2%3
F>!
$ - :5 ;1 #> - ./ =./ 0
23 - 2%39 $ - 5155=: ;
23 - ./ 29 2%3 - 5 29 = +B
$%#
# - ./ 01 min.
typ.
max.
Units
:1/
=1E .1.
/1/
D
. .1.
41/
2
2
*
GCH
518/
I
2 - D55 2 1 2%3 - 6=/ 2
$ - :5 ;1 #> - =./ 0
F% - F% - =4 J
3 @ 3
$
, GCH
45
D5
..5
.5
85
:5
.85
.4
=18
K
Freewheeling CAL diode
2* - 23
2#
#
$* - /5 ;9 #> - ./ =./ 0
#> - =./ 0
#> - =./ 0
=1:/ =1:
518/
==
F>!
=1E =1E/
51A
=4
2
2
J
=1=
GCH
$FF+
L
I
$* - /5 ;9 2F - D55 2
$*C - !855 ;CM
D5
D14
;
M
3
2%3 - 5 29 #> - =./ 0
51A/
K
Mechanical data
+=
N
.1/
D5
(3+$#"O D
#//
GARL
1
20-10-2005 RAM
© by SEMIKRON
SK 55 GARL 065 E
Fig.5 Typ. output characteristic, tp = 80 µs, 25 °C
Fig.6 Typ. output characteristic, tp = 80 µs, 125 °C
Fig.7 Turn-on / -off energy = f (IC)
Fig.8 Turn-on / -off energy = f (RG)
Fig.9 Typ. gate charge characteristic
Fig.10 Typ. capacitances vs. VCE
2
20-10-2005 RAM
© by SEMIKRON
SK 55 GARL 065 E
Fig.11 Typ. switching times vs. IC
Fig.12 Typ. switching times vs. gate resistor RG
Fig.13 Diode turn-off energy dissipation per pulse
3
20-10-2005 RAM
© by SEMIKRON
SK 55 GARL 065 E
Dimensions in mm
#//
()%%3(#3 '3$;+3#3F *F #3 ('3F "$ ( ; #3 +) #$ % "$ ( $ #3
"I . #//
This is an electrostatic discharge sensitive device (ESDS), international standard IEC 60747-1, Chapter IX.
This technical information specifies semiconductor devices but promises no characteristics. No warranty or guarantee
expressed or implied is made regarding delivery, performance or suitability.
4
20-10-2005 RAM
© by SEMIKRON