SEMIKRON SKM300MLI066T

SKM 300 MLI 066 T
Absolute Maximum Ratings
Symbol Conditions
IGBT
3 )* +
!
3 (6* +
)*+- "
500
&/0
7
80 +
)**
7
500
7
< )0
3 (*0 +
5
@
)* +
&)/
7
80 +
)((
7
/)0
7
3 (*0 +
)(00
7
)* +
&)/
7
80 +
)((
7
/)0
7
)(00
7
*00
7
3
. /0 111 2 (6*
+
. /0 111 2 ()*
+
)*00
!9:),!
;
Trench IGBT Modules
SKM 300 MLI 066 T
Target Data
Units
)* +
!9:
SEMITRANS® 5
Values
&50 = ; > (* =
? 500 Inverse Diode
!A
3 (*0 +
!A9:
!A9:),!A
!A:
(0 = Freewheeling Diode
!A
3 (*0 +
!A9:
!A9:),!A
!A:
(0 = 3 (*0 +
Module
Features
!
" # Typical Applications
$%
& ' !
Remarks
" ()*+ ,- "" ./0112(*0+
!9:
7- ( 1
Characteristics
Symbol Conditions
IGBT
)*+- "
;
; - ! /-8 7
!
; 0 - 3 )* +
!;
0 - ; )0 3 )* +
0
; (* ; .(*1112(*
9;
3 +
"
" 9;
)-) C
"G" &/00 7G@
9; )-) C
"G" &/00 7G@
93.
!;I
Units
*
*-8
5-*
0-0(*
7
()00
7
(
3 (*0 +
0-8*
0-B
3 )*+
(-8
&
C
3 (*0+
)-6
&-8
C
(-/*
(-B
(-6
)-(
( :D
E;
max.
0-B
!
&00 7- ; (* 3 )*+1
)*- ; 0 typ.
3 )* +
3 (*0+1
min.
&00
! &007
3 ()* +
; ..(*G2(*
(8-/
(-(/
A
A
0-*/
A
&B00
(
F
(/0
8B
&-*
/&&
((5
H
(0-(
H
0-)
JGK
MLI-T
1
21-09-2009 DIL
© by SEMIKRON
SKM 300 MLI 066 T
Characteristics
Symbol Conditions
Inverse Diode
A !A
)/* 7= ; 0 A0
A
SEMITRANS® 5
Trench IGBT Modules
SKM 300 MLI 066 T
!99:
E
!A )/* 7
; .8 = &00 93.L
""
Features
!
" # Typical Applications
$%
& ' !
Remarks
" ()*+ ,- "" ./0112(*0+
typ.
max.
Units
3 )* +1
(-&*
(-5
3 ()* +1
(-&*
(-5
3 )* +
(
(-(
3 ()* +
0-B
(
3 )* +
(-/)
)
C
3 ()* +
(-8
)-/
C
3 ()* +
7
@
H
0-)8
JGK
Free-wheeling diode (Neutral Clamp Diode)
A !A
)/* 7= ; 0 A0
3 )* +1
(-&*
(-5
3 ()* +1
(-&*
(-5
(
(-(
3 )* +
A
Target Data
min.
3 ()* +
0-B
(
3 )* +
(-/)
)
3 ()* +
(-8
)-/
3 ()* +
(B/
(&
!99:
E
!A &00 7
"G" &/00 7G@
7
@
; 0 = &00 93.AL
""
:
M :5
&
*
#
:
:5
)-*
*
#
&(0
/
H
0-)8
JGK
Temperature sensor
9(00
(00+ 9)**MC
/B&<*N
C
J
This is an electrostatic discharge sensitive device (ESDS), international standard
IEC 60747-1, Chapter IX.
This technical information specifies semiconductor devices but promises no
characteristics. No warranty or guarantee expressed or implied is made regarding
delivery, performance or suitability.
MLI-T
2
21-09-2009 DIL
© by SEMIKRON
SKM 300 MLI 066 T
Fig. 1 Typ. output characteristic, inclusive RCC'+ EE'
Fig. 2 Rated current vs. temperature IC = f (TC)
Fig. 3 Typ. turn-on /-off energy = f (IC)
Fig. 4 Typ. turn-on /-off energy = f (RG)
Fig. 6 Typ. gate charge characteristic
3
21-09-2009 DIL
© by SEMIKRON
SKM 300 MLI 066 T
Fig. 7 Typ. switching times vs. IC
Fig. 8 Typ. switching times vs. gate resistor RG
Fig. 10 CAL diode forward characteristic
4
21-09-2009 DIL
© by SEMIKRON
SKM 300 MLI 066 T
L50
:'!.
5
L50
21-09-2009 DIL
© by SEMIKRON