SKM 100GB173D Absolute Maximum Ratings Symbol Conditions IGBT &6 & &9: ;6 3%= *3 SEMITRANSTM 2 IGBT Modules SKM 100GB173D #: 4 +, B /B 3= 4 +0, 5& Characteristics Symbol Conditions IGBT &6*- Typical Applications '& % % 010 " 10, '& (& % 10, "+.,, (& 2 * / * - Units +1,, ++, *10+0, < ., " @, /// A +0, *+.0- ' ' 5& @,,, 8, *0,+0, ' ' 1., ' '& + / #9: &6*3>&6 3>269'3 > ? 3 3 4 .0 *8,- 5& 4 + # &6 !" # $ % &'! (&) ( & ) ! *+, - *., -/ 3 4 .0 *8,- 5& 4 + Values Inverse diode ;6*- Features 3 4 .0 5& 3 4 .0 5& ;6 4 &6 & 4 ' ;6 4 , &6 4 &6 3= 4 .0 *+.0- 5& 3= 4 .0 *+.0- 5& ;6 4 +0 3= 4 .0 *+.0- 5& & min. @8 4 10 ' ;6 4 +0 % & & & !&6 ;6 4 , &6 4 .0 4 + :F 9&&GA66G / " 34 ,10 *+- 5& * * && 4 +.,, & 4 10 ' 9; 4 9; 4 +, E 3= 4 +.0 5& ;6 4 < +0 typ. max. Units 00 ,+ +0 *+D.CC *CCC- . ,C +D *.+0. *C8- ' E C@ *@@- CD *0- C, # # # ++ + ,.8 E 6 *6- @, @0 @,, 0 C0 *.+- H Inverse diode # 4 6& *3>3 I # 4 10 'B ;6 4 , B 3= 4 .0 *+.0- 5& 3= 4 +.0 *- 5& 3= 4 +.0 *- 5& # 4 10 'B 3= 4 .0 * +.0 - 5& J 4 'JK 6 ;6 4 99: .. *.+C D C8 *0+8 *+D- .1 *.C+0 +C E ' K& H FWD # 4 6& *3>3 I # 4 +,, 'B ;6 4 3= 4 .0 *+.0- 5& 3= 4 +.0 *- 5& 3= 4 +.0 *- 5& # 4 +,, 'B 3= 4 .0 *+.0 - 5& J 4 'JK 6 ;6 4 99: .. *+D+. 1 .1 *.@+0 D +, *.1- E ' K& H Thermal characteristics 9*="9*="-( 9*="-#( ;)3 % ( #M( ,. ,C ,@ LJM LJM LJM 9*"- ,,0 LJM 0 0 +, Mechanical data : : N : :0 C .0 GB 1 27-03-2006 RAA © by SEMIKRON SKM 100GB173D Fig. 1 Typ. output characteristic, inclusive RCC'+ EE' Fig. 2 Rated current vs. temperature IC = f (TC) Fig. 3 Typ. turn-on /-off energy = f (IC) Fig. 4 Typ. turn-on /-off energy = f (RG) Fig. 5 Typ. transfer characteristic Fig. 6 Typ. gate charge characteristic 2 27-03-2006 RAA © by SEMIKRON SKM 100GB173D Fig. 7 Typ. switching times vs. IC Fig. 8 Typ. switching times vs. gate resistor RG Fig. 9 Transient thermal impedance of IGBT Fig. 10 Transient thermal impedance of FWD Zthp(j-c) = f (tp); D = tp/tc = tp*f Zthp(j-c) = f (tp); D = tp/tc = tp*f Fig. 11 CAL diode forward characteristic Fig. 12 Typ. CAL diode peak reverse recovery current 3 27-03-2006 RAA © by SEMIKRON SKM 100GB173D Fig. 13 Typ. CAL diode recovered charge UL Recognized File no. E 63 532 Dimensions in mm ;) ;'! & ( + & ( . *O ( +- & ( + This is an electrostatic discharge sensitive device (ESDS), international standard IEC 60747-1, Chapter IX. This technical information specifies semiconductor devices but promises no characteristics. No warranty or guarantee expressed or implied is made regarding delivery, performance or suitability. 4 27-03-2006 RAA © by SEMIKRON