SEMIKRON SKM400GA123D

SKM 400GA123D
Absolute Maximum Ratings
Symbol Conditions
IGBT
*5
&*
&*:
;5
.= .
SEMITRANSTM 4
IGBT Modules
SKM 400GA123D
Features
! " #
$ % &
'
#
( ) # *+ & "
,-* , *
-
.
/0 01 Typical Applications
# . 2 03 4* #
. 2 03 71 4*
2 / .>5:+.& ? .
Values
Units
/011
811 9$1
$11
< 01
' 81 @@@ A /31 /03
+
+
4*
0311
9B1 0$1
$11
+
+
0B11
+
+* / @
Inverse diode
&(
&(:
. 2 03 71 4*
2 / &(
2 /1 C @C .= 2 /31 4*
Characteristics
Symbol Conditions
IGBT
;5
&*5
*5.
*5
;5 2 *5 &* 2 /0 +
;5 2 1 *5 2 *5 .= 2 03 /03 4*
.= 2 03 /03 4*
;5 2 /3 .= 2 03 /03 4*
*5
&* 2 911 + ;5 2 /3 *
*
*
*5
# ;5 2 1 *5 2 03 # 2 / !F
:**GA55G
@ '
.2 03 /03 4*
##
#
** 2 $11 &* 2 911 +
:; 2 :;## 2 99 D .= 2 /03 4*
;5 2 < /3 . 2 03 4* #
min.
83
typ.
max.
Units
33
1/
/8 /$
9$$ 3
$3
19
/$ /7
8$$ $99
+
D
03 9/
9 9E
00
99
/0
91
8
/$
01
(
(
(
!
1/7 100
011
//3
E01
71
5 5##
D
811
001
B11
/11
97 81
H
Inverse diode
( 2 5*
.
.
&::
I
&( 2 911 +C ;5 2 1 C .= 2 03 /03
4*
.= 2 /03 4*
.= 2 /03 4*
&( 2 911 +C .= 2 03 /03 4*
J 2 0111 +JK
5
;5 2 0 /7
03
73 /81
/9 81
03
/0
93
D
+
K*
H
Thermal characteristics
:='
:=',
&;-.
& ,
1183
1/03
LJM
LJM
:'
1197
LJM
3
3
991
Mechanical data
N $
$ 8
9
03
GA
1
22-09-2005 RAA
© by SEMIKRON
SKM 400GA123D
Fig. 1 Typ. output characteristic, inclusive RCC'+ EE'
Fig. 2 Rated current vs. temperature IC = f (TC)
Fig. 3 Typ. turn-on /-off energy = f (IC)
Fig. 4 Typ. turn-on /-off energy = f (RG)
Fig. 5 Typ. transfer characteristic
Fig. 6 Typ. gate charge characteristic
2
22-09-2005 RAA
© by SEMIKRON
SKM 400GA123D
Fig. 7 Typ. switching times vs. IC
Fig. 8 Typ. switching times vs. gate resistor RG
Fig. 9 Transient thermal impedance of IGBT
Fig. 10 Transient thermal impedance of FWD
Zthp(j-c) = f (tp); D = tp/tc = tp*f
Zthp(j-c) = f (tp); D = tp/tc = tp*f
Fig. 11 CAL diode forward characteristic
Fig. 12 Typ. CAL diode peak reverse recovery current
3
22-09-2005 RAA
© by SEMIKRON
SKM 400GA123D
Fig. 13 Typ. CAL diode recovered charge
UL Recognized
File no. E 63 532
Dimensions in mm
;+
* , 3B
* , 3B
This is an electrostatic discharge sensitive device (ESDS), international standard IEC 60747-1, Chapter IX.
This technical information specifies semiconductor devices but promises no characteristics. No warranty or guarantee
expressed or implied is made regarding delivery, performance or suitability.
4
22-09-2005 RAA
© by SEMIKRON