SKM 145GB123D Absolute Maximum Ratings Symbol Conditions IGBT *5 &* &*9 :5 1=59+1& > 1 + + 4* 03// Inverse diode SEMITRANSTM 2 IGBT Modules &( &(9 1 2 03 7/ 4* 2 . &( 2 ./ C ?C 1< 2 .3/ 4* .A/ B/ 0// + + ..// + .D/ ..3 A// + + .83/ + Freewheeling diode SKM 145GB123D &( &(9 1 2 03 7/ 4* 2 . &( 2 ./ C ?C 1< 2 .3/ 4* SKM 145GAL123D 1 2 03 4* # Characteristics Symbol Conditions IGBT SKM 145GAR123D :5 Features ! Units .0// .83 ../ 0// ; 0/ ' 8/ ??? @ .3/ .03 +* . ? Values 1 2 03 7/ 4* 2 . 1< 1 1 2 03 4* # "! # $ % & ' # ( ) # *+ & " ,*- , * - ./ 0/ Typical Applications # min. 2 *5 &* 2 8 + :5 2 / *5 2 *5 1< 2 03 .03 4* 1< 2 03 .03 4* :5 2 .3 1< 2 03 .03 4* :5 &*5 *51 *5 *5 &* 2 .// + 83 :5 2 .3 * * * *5 # :5 2 / *5 2 03 # 2 . F 9**G@55G ? ' 12 03 .03 4* ## # ** 2 $// &* 2 .// + 9: 2 9:## 2 $7 E 1< 2 .03 4* :5 2 ; .3 typ. max. 33 /. .8 .$ .. .3 $3 /A .$ .7 .8 .B 03 A. A AD $3 . /3 73 .3 /$ A/ /D3 . .$/ 7/ 8// D/ 5 5## Units + E ( ( ( E A0/ .$/ 30/ .// .$ .0 H Inverse diode ( 2 5* 1 1 &99 I 5 &( 2 .// +C :5 2 / C 1< 2 03 .03 4* 1< 2 .03 4* 1< 2 .03 4* &( 2 .// +C 1< 2 03 .03 4* J 2 ./// +JK :5 0 .7 7 A3 3/ 3 .8 03 .0 .. 2 E + K* H FWD ( 2 5* 1 1 &99 I 5 &( 2 .3/ +C :5 2 / 1< 2 03 .03 4* 1< 2 .03 4* 1< 2 .03 4* &( 2 .3/ +C 1< 2 03 .03 4* J 2 +JK :5 0 .7 03 .0 D 33 7/ 7 0A 2 E + K* H Thermal characteristics 9<' 9<', 9<'(, &:-1 & , (M, /.3 /A$ /A LJM LJM LJM 9' //3 LJM 3 3 .$/ Mechanical data GB GAL GAR N $ 3 1 26-09-2005 RAA A 03 © by SEMIKRON SKM 145GB123D Fig. 1 Typ. output characteristic, inclusive RCC'+ EE' Fig. 2 Rated current vs. temperature IC = f (TC) Fig. 3 Typ. turn-on /-off energy = f (IC) Fig. 4 Typ. turn-on /-off energy = f (RG) Fig. 5 Typ. transfer characteristic Fig. 6 Typ. gate charge characteristic 2 26-09-2005 RAA © by SEMIKRON SKM 145GB123D Fig. 7 Typ. switching times vs. IC Fig. 8 Typ. switching times vs. gate resistor RG Fig. 9 Transient thermal impedance of IGBT Fig. 10 Transient thermal impedance of FWD Zthp(j-c) = f (tp); D = tp/tc = tp*f Zthp(j-c) = f (tp); D = tp/tc = tp*f Fig. 11 CAL diode forward characteristic Fig. 12 Typ. CAL diode peak reverse recovery current 3 26-09-2005 RAA © by SEMIKRON SKM 145GB123D Fig. 13 Typ. CAL diode recovered charge UL Recognized File no. E 63 532 Dimensions in mm :- * , $. :+ * , $0 O , $. :+9 * , $A O , $. * , $. This is an electrostatic discharge sensitive device (ESDS), international standard IEC 60747-1, Chapter IX. This technical information specifies semiconductor devices but promises no characteristics. No warranty or guarantee expressed or implied is made regarding delivery, performance or suitability. 4 26-09-2005 RAA © by SEMIKRON