AOD9N40 400V,8A N-Channel MOSFET General Description The AOD9N40 is fabricated using an advanced high voltage MOSFET process that is designed to deliver high levels of performance and robustness in popular AC -DC applications.By providing low RDS(on), Ciss and Crss along with guaranteed avalanche capability this device can be adopted quickly into new and existing offline power supply designs.This device is ideal for boost converters and synchronous rectifiers for consumer, telecom, industrial power supplies and LED backlighting. Features 500V@150℃ VDS ID (at VGS=10V) 8A <0.8Ω RDS(ON) (at VGS=10V) D G S Absolute Maximum Ratings TA=25°C unless otherwise noted Symbol Parameter VDS Drain-Source Voltage VGS Gate-Source Voltage TC=25°C Continuous Drain B Current TC=100°C Pulsed Drain Current C Units V ±30 V 8 ID 5 A IDM 22 IAR 3.2 EAR 150 mJ Single pulsed avalanche energy H Peak diode recovery dv/dt TC=25°C B o Power Dissipation Derate above 25 C EAS dv/dt 300 5 125 mJ V/ns W Junction and Storage Temperature Range Maximum lead temperature for soldering purpose, 1/8" from case for 5 seconds TJ, TSTG 1 -50 to 150 W/ oC °C 300 °C Avalanche Current C Repetitive avalanche energy C Thermal Characteristics Parameter Maximum Junction-to-Ambient Maximum Case-to-sink A Maximum Junction-to-Case D,F 1/6 Maximum 400 A,G PD TL Symbol RθJA RθCS RθJC A Typical 45 Maximum 55 Units °C/W 0.7 0.5 1 °C/W °C/W www.freescale.net.cn AOD9N40 400V,8A N-Channel MOSFET Electrical Characteristics (TJ=25°C unless otherwise noted) Symbol Parameter Conditions Min ID=250µA, VGS=0V, TJ=25°C 400 Typ Max Units STATIC PARAMETERS BVDSS Drain-Source Breakdown Voltage BVDSS /∆TJ Zero Gate Voltage Drain Current IDSS Zero Gate Voltage Drain Current IGSS Gate-Body leakage current VDS=0V, VGS=±30V VGS(th) RDS(ON) Gate Threshold Voltage VDS=5V ID=250µA Static Drain-Source On-Resistance gFS Forward Transconductance VSD Diode Forward Voltage IS=1A,VGS=0V IS Maximum Body-Diode Continuous Current Maximum Body-Diode Pulsed Current ISM ID=250µA, VGS=0V, TJ=150°C 500 V ID=250µA, VGS=0V 0.4 V/ C VDS=400V, VGS=0V 1 VDS=320V, TJ=125°C 10 Output Capacitance Crss Reverse Transfer Capacitance Rg Gate resistance SWITCHING PARAMETERS Qg Total Gate Charge Qgs Gate Source Charge ±100 µA 4 4.5 nΑ V VGS=10V, ID=4A 0.64 0.8 Ω VDS=40V, ID=4A 8 1 V DYNAMIC PARAMETERS Ciss Input Capacitance Coss o 3.4 0.75 8 A 22 A 630 760 pF 45 73 100 pF 2 5.7 9 pF 1.2 2.6 4.0 Ω 10 13.1 16 nC 500 VGS=0V, VDS=25V, f=1MHz VGS=0V, VDS=0V, f=1MHz S VGS=10V, VDS=320V, ID=8A 3.9 nC Qgd Gate Drain Charge 4.8 nC tD(on) Turn-On DelayTime 17 ns 52 ns 25 ns tr Turn-On Rise Time tD(off) Turn-Off DelayTime tf Turn-Off Fall Time VGS=10V, VDS=200V, ID=8A, RG=25Ω 30 ns trr Body Diode Reverse Recovery Time IF=8A,dI/dt=100A/µs,VDS=100V 150 195 240 Qrr Body Diode Reverse Recovery Charge IF=8A,dI/dt=100A/µs,VDS=100V 1.5 1.9 2.3 ns µC A. The value of R θJA is measured with the device in a still air environment with T A =25°C. B. The power dissipation P D is based on T J(MAX)=150°C in a TO252 package, using junction-to-case thermal resistance, and is more useful in setting the upper dissipation limit for cases where additional heatsinking is used. C. Repetitive rating, pulse width limited by junction temperature T J(MAX)=150°C. D. The R θJA is the sum of the thermal impedence from junction to case R θJC and case to ambient. E. The static characteristics in Figures 1 to 6 are obtained using <300 µs pulses, duty cycle 0.5% max. F. These curves are based on the junction-to-case thermal impedence which is measured with the device mounted to a large heatsink, assuming a maximum junction temperature of T J(MAX)=150°C. G.These tests are performed with the device mounted on 1 in 2 FR-4 board with 2oz. Copper, in a still air environment with T A=25°C. H. L=60mH, IAS=3.2A, VDD=150V, RG=10Ω, Starting T J=25°C 2/6 www.freescale.net.cn AOD9N40 400V,8A N-Channel MOSFET TYPICAL ELECTRICAL AND THERMAL CHARACTERISTICS 16 100 VDS=40V 10V -55°C 12 6.5V 8 ID(A) ID (A) 10 6V 125°C 1 4 VGS=5.5V 25°C 0.1 0 0 5 10 15 20 25 2 30 4 2.0 3 1.6 2.5 Normalized On-Resistance RDS(ON) (Ω) VDS (Volts) Fig 1: On-Region Characteristics VGS=10V 1.2 6 8 10 VGS(Volts) Figure 2: Transfer Characteristics 0.8 0.4 VGS=10V ID=4A 2 1.5 1 0.5 0.0 0 3 6 9 12 15 0 -100 18 ID (A) Figure 3: On-Resistance vs. Drain Current and Gate Voltage -50 0 50 100 150 200 Temperature (°C) Figure 4: On-Resistance vs. Junction Temperature 1.2 1.0E+02 ID=30A 40 1.0E+00 1 125°C 125°C 25°C 1.0E-01 1.0E-02 0.9 25°C 0.8 -100 1.0E-03 1.0E-04 50 100 150 200 TJ (oC) Figure 5: Break Down vs. Junction Temperature 3/6 IS (A) BVDSS (Normalized) 1.0E+01 1.1 -50 0 0.2 0.4 0.6 0.8 1.0 VSD (Volts) Figure 6: Body-Diode Characteristics www.freescale.net.cn AOD9N40 400V,8A N-Channel MOSFET TYPICAL ELECTRICAL AND THERMAL CHARACTERISTICS 15 10000 Capacitance (pF) VGS (Volts) Ciss VDS=320V ID=8A 12 9 6 1000 Coss 100 Crss 10 3 0 1 0 4 8 12 16 20 0.1 Qg (nC) Figure 7: Gate-Charge Characteristics 100 10µs RDS(ON) limited 100µs 100 1ms 1 DC TJ(Max)=150°C TC=25°C 0.1 10ms 10 100 1000 VDS (Volts) 1 0 0.0001 0.001 0.01 0.1 1 10 Pulse Width (s) Figure 10: Single Pulse Power Rating Junction-toCase (Note F) Figure 9: Maximum Forward Biased Safe Operating Area (Note F) 10 400 200 0.01 1 TJ(Max)=150°C TC=25°C 600 Power (W) ID (Amps) 10 VDS (Volts) Figure 8: Capacitance Characteristics 800 10 ZθJC Normalized Transient Thermal Resistance 1 D=Ton/T TJ,PK=TC+PDM.ZθJC.RθJC RθJC=1°C/W In descending order D=0.5, 0.3, 0.1, 0.05, 0.02, 0.01, single pulse 0.1 PD 0.01 0.001 0.000001 Single Pulse 0.00001 0.0001 Ton 0.001 0.01 T 0.1 1 10 Pulse Width (s) Figure 11: Normalized Maximum Transient Thermal Impedance (Note F) 4/6 www.freescale.net.cn AOD9N40 400V,8A N-Channel MOSFET 150 10 120 8 Current rating ID(A) Power Dissipation (W) TYPICAL ELECTRICAL AND THERMAL CHARACTERISTICS 90 60 30 0 6 4 2 0 0 25 50 75 100 125 150 0 TCASE (°C) Figure 12: Power De-rating (Note B) 25 50 75 100 125 150 TCASE (°C) Figure 13: Current De-rating (Note B) 400 TA=25°C Power (W) 300 200 100 0 0.01 0.1 1 10 100 Pulse Width (s) Figure 14: Single Pulse Power Rating Junction-to-Ambient (Note G) 1000 ZθJA Normalized Transient Thermal Resistance 10 1 In descending order D=0.5, 0.3, 0.1, 0.05, 0.02, 0.01, single pulse D=Ton/T TJ,PK=TA+PDM.ZθJA.RθJA RθJA=55°C/W 0.1 0.01 PD 0.001 Ton Single Pulse 0.0001 0.0001 0.001 0.01 0.1 1 10 T 100 1000 10000 Pulse Width (s) Figure 15: Normalized Maximum Transient Thermal Impedance (Note G) 5/6 www.freescale.net.cn AOD9N40 400V,8A N-Channel MOSFET Gate Charge Test Circuit & Waveform Vgs Qg 10V + + Vds VDC - VDC DUT Qgs Qgd - Vgs Ig Charge Res istive Switching Test Circuit & Waveforms RL Vds Vds DUT Vgs Rg + VDC 90% Vdd - 10% Vgs Vgs t d(on) tr t d(off) t on tf t off Unclamped Inductive Switching (UIS) Test Circuit & Waveforms L EAR= 1/2 LI Vds 2 AR BVDSS Vds Id + Vgs Vgs VDC Rg - Vdd I AR Id DUT Vgs Vgs Diode Recovery Tes t Circuit & Waveforms Qrr = - Idt Vds + DUT Vds - Isd Vgs Ig 6/6 Vgs L Isd + Vdd VDC - IF trr dI/dt IRM Vds Vdd www.freescale.net.cn