UNISONIC TECHNOLOGIES CO., LTD Preliminary UTT80N10H Power MOSFET 80A, 100V N-CHANNEL POWER MOSFET DESCRIPTION The UTC UTT80N10H is an N-channel Power MOSFET, it uses UTC’s advanced technology to provide the customers with high switching speed and low gate charge, etc. The UTC UTT80N10H applies to primary side switch, synchronous rectifier, Motor Drives, etc. FEATURES * RDS(ON) <16mΩ @ VGS=10V, ID=40A * High Cell Density Trench Technology * High Power and Current Handling Capability SYMBOL 2.Drain 1.Gate 3.Source ORDERING INFORMATION Ordering Number Lead Free Halogen Free UTT80N10HL-TA3-T UTT80N10HG-TA3-T UTT80N10HL-TF3-T UTT80N10HG-TF3-T Note: Pin Assignment: G: Gate D: Drain S: Source Package TO-220 TO-220F Pin Assignment 1 2 3 G D S G D S Packing Tube Tube MARKING www.unisonic.com.tw Copyright © 2016 Unisonic Technologies Co., Ltd 1 of 5 QW-R209-174 .a UTT80N10H Preliminary Power MOSFET ABSOLUTE MAXIMUM RATINGS (TC=25°C, unless otherwise specified) PARAMETER Drain-Source Voltage Gate-Source Voltage RATINGS UNIT 100 V ±20 V Continuous 80 A Drain Current Pulsed (Note 2) 320 A Avalanche Current (Note 2) 49 A Single Pulsed Avalanche Energy (Note 3) 120 mJ Peak Diode Recovery dv/dt (Note 4) 4.2 V/ns TO-220 211 W Power Dissipation PD TO- 220F 80 W Junction Temperature TJ +150 °C Storage Temperature TSTG -55 ~ +150 °C Notes: 1. Absolute maximum ratings are those values beyond which the device could be permanently damaged. Absolute maximum ratings are stress ratings only and functional device operation is not implied. 2. Pulse Test: Pulse width ≤ 300µs, Duty cycle ≤ 2%. 3. L = 0.1mH, IAS = 49A, VDD = 50V, RG = 25Ω, Starting TJ = 25°C 4. ISD≤30A, di/dt≤200A/µs, VDD≤BVDSS, TJ≤TJMAX, TJ = 25°C. SYMBOL VDSS VGSS ID IDM IAR EAS dv/dt THERMAL DATA PARAMETER Junction to Ambient Junction to Case SYMBOL θJA TO-220 TO-220F θJC RATINGS 62.5 0.59 1.56 UNIT °C/W °C/W °C/W ELECTRICAL CHARACTERISTICS (TJ=25°C, unless otherwise specified) PARAMETER SYMBOL TEST CONDITIONS OFF CHARACTERISTICS Drain-Source Breakdown Voltage BVDSS ID=250µA, VGS=0V Drain-Source Leakage Current IDSS VDS=80V, VGS=0V Forward VGS=+20V, VDS=0V Gate-Source Leakage Current IGSS Reverse VGS=-20V, VDS=0V ON CHARACTERISTICS Gate Threshold Voltage VGS(TH) VDS=VGS, ID=250µA Static Drain-Source On-State Resistance RDS(ON) VGS=10V, ID=40A DYNAMIC PARAMETERS Input Capacitance CISS VDS=25V, VGS=0V, f=1.0MHz Output Capacitance COSS Reverse Transfer Capacitance CRSS SWITCHING PARAMETERS Total Gate Charge QG VDS=50V, VGS=10V, ID=1.3A, Gate to Source Charge QGS IG=100µA Gate to Drain Charge QGD Turn-ON Delay Time tD(ON) VDD=30V, VGS=10V, ID=0.5A, Rise Time tR RG =25Ω Turn-OFF Delay Time tD(OFF) Fall-Time tF SOURCE- DRAIN DIODE RATINGS AND CHARACTERISTICS Maximum Body-Diode Continuous Current IS Maximum Body-Diode Pulsed Current ISM Drain-Source Diode Forward Voltage VSD ISD=80A Body Diode Reverse Recovery Time trr IS=30A, dI/dt=100A/µs Body Diode Reverse Recovery Charge Qrr UNISONIC TECHNOLOGIES CO., LTD www.unisonic.com.tw MIN TYP MAX UNIT 100 2.0 13 1 +100 -100 V µA nA nA 4.0 16 V mΩ 2750 270 90 pF pF pF 175 25 12 135 80 250 70 nC nC nC ns ns ns ns 80 320 1.25 40 40 A A V ns nC 2 of 5 QW-R209-174 .a UTT80N10H Preliminary Power MOSFET TEST CIRCUITS AND WAVEFORMS Peak Diode Recovery dv/dt Test Circuit VGS (Driver) Period D= P.W. P. W. Period VGS= 10V IFM, Body Diode Forward Current ISD (D.U.T.) di/dt IRM Body Diode Reverse Current Body Diode Recovery dv/dt VDS (D.U.T.) VDD Body Diode Forward Voltage Drop Peak Diode Recovery dv/dt Waveforms UNISONIC TECHNOLOGIES CO., LTD www.unisonic.com.tw 3 of 5 QW-R209-174 .a UTT80N10H Preliminary Power MOSFET TEST CIRCUITS AND WAVEFORMS(Cont.) VDS 90% VGS 10% tD(ON) tD(OFF) tF tR Switching Test Circuit Switching Waveforms QG VGS QGS QGD VD Charge Gate Charge Test Circuit L VDS Gate Charge Waveform Driver RG VDD D.U.T. IAS VGS BVDSS tp ID(t) VDS(t) VDD IAS 0.01Ω Unclamped Inductive Switching Test Circuit UNISONIC TECHNOLOGIES CO., LTD www.unisonic.com.tw tp Time Unclamped Inductive Switching Waveforms 4 of 5 QW-R209-174 .a UTT80N10H Preliminary Power MOSFET UTC assumes no responsibility for equipment failures that result from using products at values that exceed, even momentarily, rated values (such as maximum ratings, operating condition ranges, or other parameters) listed in products specifications of any and all UTC products described or contained herein. UTC products are not designed for use in life support appliances, devices or systems where malfunction of these products can be reasonably expected to result in personal injury. Reproduction in whole or in part is prohibited without the prior written consent of the copyright owner. The information presented in this document does not form part of any quotation or contract, is believed to be accurate and reliable and may be changed without notice. UNISONIC TECHNOLOGIES CO., LTD www.unisonic.com.tw 5 of 5 QW-R209-174 .a