UNISONIC TECHNOLOGIES CO., LTD UT7422Z Preliminary Power MOSFET 40A, 30V N-CHANNEL MOSFET ESD Protection DESCRIPTION The UTC UT7422Z is an N-channel MOSFET, it uses UTC’s advanced technology to provide the customers with a minimum on state resistance, etc. The UTC UT7422Z is suitable for load switch and battery protection applications. FEATURES * RDS(ON) < 4.3mΩ @ VGS=10V, ID=20A RDS(ON) < 6.0mΩ @ VGS=4.5V, ID=16A * Low RDS(ON) SYMBOL ORDERING INFORMATION Ordering Number Note: UT7422ZG-K08-3030-R Pin Assignment: G: Gate D: Drain Package DFN-8(3×3) S: Source 1 S 2 S Pin Assignment 3 4 5 6 7 S G D D D 8 D Packing Tape Reel MARKING www.unisonic.com.tw Copyright © 2015 Unisonic Technologies Co., Ltd 1 of 7 QW-R209-062.a UT7422Z Preliminary Power MOSFET ABSOLUTE MAXIMUM RATINGS (TA=25°C, unless otherwise noted) PARAMETER SYMBOL RATINGS UNIT Drain-Source Voltage VDSS 30 V Gate-Source Voltage VGSS ±20 V Continuous Drain Current TC=25°C ID 40 A Pulsed Drain Current (Note 2) IDM 200 A Continuous Drain Current TA=25°C IDSM 20 A Avalanche Current (Note 2) IAS 45 A Avalanche Energy L=0.1mH (Note 2) EAS 101 mJ Power Dissipation TC=25°C PD 36 W Junction Temperature TJ -55~+150 °C Storage Temperature Range TSTG -55~+150 °C Notes: 1. Absolute maximum ratings are those values beyond which the device could be permanently damaged. Absolute maximum ratings are stress ratings only and functional device operation is not implied. 2. Repetitive rating, pulse width limited by junction temperature TJ(MAX)=150°C. Ratings are based on low frequency and duty cycles to keep initial TJ=25°C. THERMAL CHARACTERISTICS PARAMETER Junction to Ambient Junction-to-Case SYMBOL θJA θJC UNISONIC TECHNOLOGIES CO., LTD RATINGS 75 3.4 UNIT °C/W °C/W 2 of 7 www.unisonic.com.tw QW-R209-062.a UT7422Z Preliminary Power MOSFET ELECTRICAL CHARACTERISTICS (TJ=25°C, unless otherwise noted) PARAMETER STATIC PARAMETERS Drain-Source Breakdown Voltage SYMBOL BVDSS Zero Gate Voltage Drain Current IDSS Gate-Source Leakage Current ON CHARACTERISTICS Gate Threshold Voltage On State Drain Current IGSS Static Drain-Source On-State Resistance VGS(TH) ID(ON) RDS(ON) TEST CONDITIONS MIN ID=250µA, VGS=0V VDS=30V, VGS=0V VDS=30V, VGS=0V, TJ=55°C VGS=±20V, VDS=0V 30 VDS=VGS, ID=250µA VGS=10V, VDS=5V VGS=10V, ID=20A VGS=10V, ID=20A, TJ=125°C VGS=4.5V, ID=16A VDS=5V, ID=20A 1.3 200 TYP MAX UNIT 1 5 10 1.85 2.4 3.5 5.5 4.5 85 4.3 6.8 6 Forward Transconductance gFS DYNAMIC PARAMETERS Input Capacitance CISS 1950 2445 2940 =0V, V =15V, f=1.0MHz V Output Capacitance COSS 270 390 510 GS DS 130 220 310 Reverse Transfer Capacitance CRSS Gate Resistance RG VDS=0V, VGS=0V, f=1.0MHz 1.2 2.4 3.6 SWITCHING PARAMETERS Total Gate Charge QG VGS=10V, VDS=15V, ID=20A 32 41 50 Total Gate Charge QG 15 19 24 VGS=4.5V, VDS=15V, ID=20A Gate to Source Charge QGS 7.2 Gate to Drain Charge QGD 6.6 Turn-ON Delay Time tD(ON) 7 VGS=10V, VDS=15V, RL=0.75Ω, Rise Time tR 5 RGEN=3Ω Turn-OFF Delay Time tD(OFF) 41.5 Fall-Time tF 10.5 SOURCE- DRAIN DIODE RATINGS AND CHARACTERISTICS Diode Forward Voltage VSD IS=1A,VGS=0V 0.7 1 Maximum Body-Diode Continuous IS 40 Current (Note) Body Diode Reverse Recovery Time trr 17.5 22 IF=20A, dI/dt=500A/µs Body Diode Reverse Recovery Charge Qrr 31 40 Note: The maximum current rating is package limited. UNISONIC TECHNOLOGIES CO., LTD V µA µA µA V A mΩ mΩ mΩ S pF pF pF Ω nC nC nC nC ns ns ns ns V A ns nC 3 of 7 www.unisonic.com.tw QW-R209-062.a UT7422Z Preliminary Power MOSFET TEST CIRCUITS AND WAVEFORMS UNISONIC TECHNOLOGIES CO., LTD 4 of 7 www.unisonic.com.tw QW-R209-062.a UT7422Z Preliminary Power MOSFET TEST CIRCUITS AND WAVEFORMS (Cont.) + DUT VDS RG L ISD VGS VDD Driver Same Type as DUT dv/dt controlled by RG ISD controlled by pulse period VGS (Driver) D= Gate Pulse Width Gate Pulse Period 10V IFM, Body Diode Forward Current ISD (DUT) di/dt IRM Body Diode Reverse Current VDS (DUT) Body Diode Recovery dv/dt VSD VDD Body Diode Forward Voltage Drop Peak Diode Recovery dv/dt Test Circuit and Waveforms UNISONIC TECHNOLOGIES CO., LTD 5 of 7 www.unisonic.com.tw QW-R209-062.a UT7422Z Preliminary UNISONIC TECHNOLOGIES CO., LTD Power MOSFET 6 of 7 www.unisonic.com.tw QW-R209-062.a UT7422Z Preliminary Power MOSFET UTC assumes no responsibility for equipment failures that result from using products at values that exceed, even momentarily, rated values (such as maximum ratings, operating condition ranges, or other parameters) listed in products specifications of any and all UTC products described or contained herein. UTC products are not designed for use in life support appliances, devices or systems where malfunction of these products can be reasonably expected to result in personal injury. Reproduction in whole or in part is prohibited without the prior written consent of the copyright owner. The information presented in this document does not form part of any quotation or contract, is believed to be accurate and reliable and may be changed without notice. UNISONIC TECHNOLOGIES CO., LTD 7 of 7 www.unisonic.com.tw QW-R209-062.a