UNISONIC TECHNOLOGIES CO., LTD UTT60N10M Preliminary POWER MOSFET 60A, 100V N-CHANNEL ENHANCEMENT MODE TRENCH POWER MOSFET DESCRIPTION The UTC UTT60N10M is N-channel enhancement mode power MOSFET using UTC’s advanced technology to provide customers with high switching speed, a extremely low RDS(ON) and low gate charge. The UTC UTT60N10M is suitable for high frequency Point -of-Load Synchronous, Networking DC-DC System, CCFL Back-light Inverter, etc. FEATURES * RDS(ON) <16mΩ @ VGS=10V, ID=30A * Green Device Available * Low Gate Charge * Surface mount package SYMBOL ORDERING INFORMATION Ordering Number Package Lead Free Halogen Free UTT60N10ML-TM3-R UTT60N10MG-TM3-R TO-251 UTT60N10MG-S08-R SOP-8 UTT60N10MG-K08-5060-R DFN-8(5×6) Note: Pin Assignment: G: Gate D: Drain S: Source www.unisonic.com.tw Copyright © 2016 Unisonic Technologies Co., Ltd 1 G S S 2 D S S Pin Assignment 3 4 5 6 S - - S G D D S G D D 7 D D 8 D D Packing Tube Tape Reel Tape Reel 1 of 7 QW-R209-132.c UTT60N10M Preliminary POWER MOSFET MARKING Package Marking TO-251 SOP-8 DFN-8(5×6) UNISONIC TECHNOLOGIES CO., LTD www.unisonic.com.tw 2 of 7 QW-R209-132.c UTT60N10M Preliminary POWER MOSFET ABSOLUTE MAXIMUM RATING (TA =25°С, unless otherwise specified) PARAMETER RATINGS UNIT 100 V ±20 V TC=25°C 60 A Continuous ID Drain Current TC=100°C 36 A 100 A Pulsed (Note 2) IDM Avalanche Current IAS 22.6 A Avalanche Energy (Note 3) EAS 126 mJ TO-251 60 W SOP-8 Power Dissipation TC=25°C PD 7 W DFN-8(5×6) 88 W Junction Temperature TJ 150 °C Storage Temperature Range TSTG -55 ~ +150 °C Notes: 1. Absolute maximum ratings are those values beyond which the device could be permanently damaged. Absolute maximum ratings are stress ratings only and functional device operation is not implied. 2. Pulse width limited by safe operating area. 3. Starting TJ=25°C, VDD=25V, VGS=10V, L=1mH, IAS=15.9A Drain-Source Voltage Gate-Source Voltage SYMBOL VDSS VGSS THERMAL RESISTANCES CHARACTERISTICS PARAMETER SYMBOL TO-251 Junction to Ambient Steady state SOP-8 θJA DFN-8(5×6) TO-251 SOP-8 Junction to Case Steady state θJC DFN-8(5×6) Note: The data tested by surface mounted on a 1 inch2 FR-4 board with 2 oz copper. UNISONIC TECHNOLOGIES CO., LTD www.unisonic.com.tw RATINGS 110 90 40.3 2.08 17.86 1.4 UNIT °C/W °C/W °C/W °C/W °C/W °C/W 3 of 7 QW-R209-132.c UTT60N10M Preliminary POWER MOSFET ELECTRICAL CHARACTERISTICS (TA =25°С, unless otherwise specified) PARAMETER OFF CHARACTERISTICS Drain-Source Breakdown Voltage Drain-Source Leakage Current Gate-Source Leakage Current SYMBOL BVDSS IDSS Forward Reverse ON CHARACTERISTICS Gate Threshold Voltage Static Drain-Source On-State Resistance IGSS VGS(TH) RDS(ON) TEST CONDITIONS MIN ID=250µA, VGS=0V VDS=100V, VGS=0V,Tj=25°C VDS=80V, VGS=0V,Tj=55°C VGS=+20V, VDS=0V VGS=-20V, VDS=0V 100 VDS=VGS, ID=250µA VGS=10V, ID=30A VGS=4.5V, ID=15A 1.0 DYNAMIC PARAMETERS Input Capacitance CISS VGS=0V, VDS=25V, f=1.0MHz Output Capacitance COSS Reverse Transfer Capacitance CRSS Gate Resistance RG VGS=0V, VDS=0V, f=1.0MHz SWITCHING PARAMETERS Total Gate Charge (Note 1) QG VDS=30V, VGS=10V, ID=1.3A Gate to Source Charge QGS IG= 100μA (Note1, 2) Gate to Drain Charge QGD Turn-on Delay Time (Note 1) tD(ON) Rise Time tR VDS=50V, VGS=10V, ID=0.5A, RG=25Ω (Note1, 2) Turn-off Delay Time tD(OFF) Fall-Time tF SOURCE- DRAIN DIODE RATINGS AND CHARACTERISTICS Maximum Body-Diode Continuous Current IS Forward On Voltage (Note 1) VSD IS=60A, VGS=0V Reverse Recovery Time (Note 1) trr IS=30A, VGS=0V, dI/dt=100A/μs Reverse Recovery Charge Qrr TYP 15 17 MAX UNIT 1 5 +100 -100 V µA µA nA nA 3.0 16 20 V mΩ mΩ 4460 255 160 1.5 pF pF pF Ω 132 11 17 88 82 1160 252 nC nC nC ns ns ns ns 60 1.2 100 210 A V ns nC Notes: 1. Pulse Test: Pulse width ≤ 300μs, Duty cycle≤2%. 2. Essentially independent of operating temperature. UNISONIC TECHNOLOGIES CO., LTD www.unisonic.com.tw 4 of 7 QW-R209-132.c UTT60N10M Preliminary POWER MOSFET TEST CIRCUITS AND WAVEFORMS + DUT VDS RG L ISD VGS VDD Driver Same Type as DUT dv/dt controlled by RG ISD controlled by pulse period Peak Diode Recovery dv/dt Test Circuit VGS (Driver) D= Gate Pulse Width Gate Pulse Period 10V IFM, Body Diode Forward Current ISD (DUT) di/dt IRM Body Diode Reverse Current VDS (DUT) Body Diode Recovery dv/dt VSD VDD Body Diode Forward Voltage Drop Peak Diode Recovery dv/dt Test Circuit and Waveforms Peak Diode Recovery dv/dt Waveforms UNISONIC TECHNOLOGIES CO., LTD www.unisonic.com.tw 5 of 7 QW-R209-132.c UTT60N10M Preliminary POWER MOSFET TEST CIRCUITS AND WAVEFORMS VDS 90% VGS 10% tD(ON) tD(OFF) tF tR Switching Test Circuit Switching Waveforms VGS QG 10V QGS QGD Charge Gate Charge Test Circuit Gate Charge Waveform BVDSS IAS ID(t) VDS(t) VDD tp Unclamped Inductive Switching Test Circuit UNISONIC TECHNOLOGIES CO., LTD www.unisonic.com.tw Time Unclamped Inductive Switching Waveforms 6 of 7 QW-R209-132.c UTT60N10M Preliminary POWER MOSFET UTC assumes no responsibility for equipment failures that result from using products at values that exceed, even momentarily, rated values (such as maximum ratings, operating condition ranges, or other parameters) listed in products specifications of any and all UTC products described or contained herein. UTC products are not designed for use in life support appliances, devices or systems where malfunction of these products can be reasonably expected to result in personal injury. Reproduction in whole or in part is prohibited without the prior written consent of the copyright owner. The information presented in this document does not form part of any quotation or contract, is believed to be accurate and reliable and may be changed without notice. UNISONIC TECHNOLOGIES CO., LTD www.unisonic.com.tw 7 of 7 QW-R209-132.c