Datasheet

UNISONIC TECHNOLOGIES CO., LTD
2SB1116/A
PNP SILICON TRANSISTOR
PNP EPITAXIAL SILICON
TRANSISTOR

DESCRIPTION
Complement to UTC 2SD1616/A

ORDERING INFORMATION
Ordering Number
Package
Lead Free
Halogen Free
SOT-89
2SB1116G-x-AB3-B
2SB1116L-x-T92-B
2SB1116G-x-T92-B
TO-92
2SB1116L-x-T92-K
2SB1116G-x-T92-K
TO-92
2SB1116AG-x-AB3-B
SOT-89
2SB1116AL-x-T92-B
2SB1116AG-x-T92-B
TO-92
2SB1116AL-x-T92-K
2SB1116AG-x-T92-K
TO-92
Note: Pin Assignment: B: Base
C: Collector
E: Emitter

Pin Assignment
1
2
3
B
C
E
E
C
B
E
C
B
B
C
E
E
C
B
E
C
B
Packing
Tape Reel
Tape Box
Bulk
Tape Reel
Tape Box
Bulk
MARKING
Package
2SB1116
2SB1116A
SOT-89
TO-92
www.unisonic.com.tw
Copyright © 2016 Unisonic Technologies Co., Ltd
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
PNP SILICON TRANSISTOR
ABSOLUTE MAXIMUM RATINGS (TA=25°C, unless otherwise specified)
PARAMETER
SYMBOL
RATINGS
UNIT
-60
Collector to Base Voltage
VCBO
V
-80
-50
Collector to Emitter Voltage
VCEO
V
-60
Emitter to Base Voltage
VEBO
-6
V
DC
IC
-1
A
Collector Current
-2
A
Pulse(Note2)
ICM
SOT-89
500
mW
Total Power Dissipation
PC
TO-92
750
mW
Junction Temperature
TJ
+150
C
Operating Temperature
TOPR
-20 ~ +85
°C
Storage Temperature
TSTG
-55 ~ +150
C
Notes: 1. Absolute maximum ratings are those values beyond which the device could be permanently damaged.
Absolute maximum ratings are stress ratings only and functional device operation is not implied.
2. Pulse width≦10ms, Duty cycle≦50%
2SB1116
2SB1116A
2SB1116
2SB1116A

ELECTRICAL CHARACTERISTICS (TA=25C, unless otherwise specified)
PARAMETER
SYMBOL
TEST CONDITIONS
Collector-Emitter Saturation Voltage(Note) VCE(SAT) IC=-1A, IB=-50mA
Base-Emitter Saturation Voltage(Note)
VBE(SAT) IC=-1A, IB=-50mA
Base Emitter On Voltage(Note)
VBE(ON) VCE=-2V, IC=-50mA
Collector Cut-Off Current
ICBO
VCB=-60V, IE=0
Emitter Cut-Off Current
IEBO
VEB=-6V, IC=0
VCE=-2V,
2SB1116
hFE1
IC=-100mA
DC Current Gain(Note)
2SB1116A
hFE2
VCE=-2V, IC=-1A
Transition Frequency
fT
VCE=-2V, IC=-100mA
Output Capacitance
COB
VCB=-10V, IE=0, f=1MHz
Turn On Time
tON
VCC=-10V, IC=-100mA
Storage Time
tSTG
IB1=-IB2=-10mA, VBE(OFF)=2 ~ 3V
Fall Time
tF
Note: Pulse Test: Pulse width≦350μs, Duty cycle≦2%.

MIN
-600
135
135
81
70
TYP
-0.2
-0.9
-650
MAX
-0.3
-1.2
-700
-100
-100
600
400
120
25
0.07
0.7
0.07
UNIT
V
V
mV
nA
nA
MHz
pF
μs
μs
μs
CLASSIFICATION OF hFE1
RANK
hFE1
Y
135 ~ 270
UNISONIC TECHNOLOGIES CO., LTD
www.unisonic.com.tw
G
200 ~ 400
L
300 ～ 600
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TYPICAL CHARACTERISTICS
Static Characteristic
IB=-250μA
IB=-150μA
-60
IB=-100μA
-40
IB=-50μA
-20
0
0
-0.8
IB=-2.5mA
IB=-1.5mA
IB=-1.0mA
-0.2
IB=-0.5mA
0.0
0.0
-10
100
IB=-2.0mA
-0.4
DC Current Gain
VCE=-2V
IB=-3.0mA
-0.6
-4
-8
-10
-2
-6
Collector-Emitter Voltage, VCE (V)
1000
DC Current Gain, hFE
Collector Current, Ic (A)
IB=-200μA
-80
Static Characteristic
IB=-5.0mA IB=-4.5mA IB=-4.0mA
IB=-3.5mA
-1.0
Saturation Voltage, VBE(SAT), VCE(SAT)
(V)
Collector Current, Ic (mA)
-100
-0.2 -0.4
-0.6 -0.8
-1.0
Collector-Emitter Voltage, VCE (V)
Base-Emitter Saturation Voltage
Collector-Emitter Saturation Voltage
-1
IC=20IB
VBE(SAT)
-0.1
10
1
-0.01
-0.1
-1
Collector Current, Ic (mA)
-10
-0.01
-0.01
VCE(SAT)
-0.1
-1
Collector Current, IC (A)
-10
Capacitance, Cob (pF)
Time, tON, tSTG, tF (μs)

PNP SILICON TRANSISTOR
UNISONIC TECHNOLOGIES CO., LTD
www.unisonic.com.tw
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TYPICAL CHARACTERISTICS(Cont.)
Current Gain Bandwidth Product
1000
VCE=-2V
-10
10
-0.1
1
-0.01
-0.1
-10
-1
Collector Current, IC (mA)
Safe Operating Area
10
-1
100
-0.01
-1
m
s
PW
=1
m
200ms
s
DC
-10
-100
Collector-Emitter Voltage, VCE (V)
Power Derating
0.8
Power Dissipation, PC (W)

PNP SILICON TRANSISTOR
0.7
0.6
0.5
0.4
0.3
0.2
0.1
0.0
0
25
50
75 100 125 150 175
Ambient Temperature, Ta ( ℃)
UTC assumes no responsibility for equipment failures that result from using products at values that
exceed, even momentarily, rated values (such as maximum ratings, operating condition ranges, or
other parameters) listed in products specifications of any and all UTC products described or contained
herein. UTC products are not designed for use in life support appliances, devices or systems where
malfunction of these products can be reasonably expected to result in personal injury. Reproduction in
whole or in part is prohibited without the prior written consent of the copyright owner. The information
presented in this document does not form part of any quotation or contract, is believed to be accurate
and reliable and may be changed without notice.
UNISONIC TECHNOLOGIES CO., LTD
www.unisonic.com.tw
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