UNISONIC TECHNOLOGIES CO., LTD MMBTA06 NPN SILICON TRANSISTOR AMPLIFIER TRANSISTOR FEATURES 3 * Collector-Emitter Voltage: VCEO=80V * Collector Dissipation: PD=350mW 2 1 SOT-23 (JEDEC TO-236) ORDERING INFORMATION Ordering Number Note: MMBTA06G-AE3-R Pin Assignment: E: Emitter Package B: Base SOT-23 C: Collector Pin Assignment 1 2 3 E B C Packing Tape Reel MARKING www.unisonic.com.tw Copyright © 2015 Unisonic Technologies Co., Ltd 1 of 5 QW-R206-041.F MMBTA06 NPN SILICON TRANSISTOR ABSOLUTE MAXIMUM RATINGS (TA=25°С, unless otherwise specified) PARAMETER Collector Base Voltage Collector Emitter Voltage Emitter Base Voltage Collector Current - Continuous Total Device Dissipation(Note 2) Derate Above 25°C RATINGS UNIT 80 V 80 V 4 V 500 mA 350 mW PD 2.8 mW/°C Junction Temperature TJ +150 °C Storage Temperature TSTG -55 ~ +150 °C Notes: 1. Absolute maximum ratings are those values beyond which the device could be permanently damaged. Absolute maximum ratings are stress ratings only and functional device operation is not implied. 2. Device mounted on FR-4=1.6×1.6×0.06 in THERMAL DATA PARAMETER Junction to Ambient SYMBOL VCBO VCEO VEBO IC SYMBOL θJA RATINGS 357 UNIT °C/W ELECTRICAL CHARACTERISTICS (TA=25°C, unless otherwise specified) PARAMETER OFF CHARACTERISTICS Collector Emitter Breakdown Voltage (Note 1) Emitter Base Breakdown Voltage Collector Cutoff Current Collector Cutoff Current ON CHARACTERISTICS DC Current Gain SYMBOL BVCEO BVEBO ICES ICBO hFE TEST CONDITIONS IC=1.0mA, IB=0 IE=100μA, IC=0 VCE=60V, IB=0 VCB=80V, IE=0 80 4 VCE=1V , IC=10mA, VCE=1V , IC=100mA, IC=100mA, IB=10mA VCE=1V , IC=100mA, 100 100 Collector Emitter Saturation Voltage VCE(SAT) Base Emitter on Voltage VBE(ON) SMALL-SIGNAL CHARACTERISTICS Current Gain Bandwidth Product (Note2) fT VCE=2V, IC=10mA, f=100MHz Notes: 1. Pulse test: PW ≤ 300μs, Duty Cycle ≤ 2% 2. fT is defined as the frequency at which IhfeI extrapolates to unity. UNISONIC TECHNOLOGIES CO., LTD www.unisonic.com.tw MIN 100 TYP MAX UNIT 0.1 0.1 V V μA μA 0.25 1.2 V V MHz 2 of 5 QW-R206-041.F MMBTA06 NPN SILICON TRANSISTOR SWITCHING TIME TEST CIRCUITS TURN-ON TIME -1.0V 5.0µs +10V 0 100 VIN tr=3.0ns 5.0µF TURN-OFF TIME +VBB VCC +40V VCC +40V 100 RL OUTPUT VIN RB 5.0µF CS＜6.0pF 100 5.0µs RL OUTPUT RB CS<6.0pF 100 tr=3.0ns UNISONIC TECHNOLOGIES CO., LTD www.unisonic.com.tw 3 of 5 QW-R206-041.F MMBTA06 Collector Current, IC (mA) Capacitance, C (pF) Current-Gain Bandwidth Product, fT (MHz) TYPICAL CHARACTERISTICS Time, t (ns) NPN SILICON TRANSISTOR DC Current Gain 400 TJ=125℃ 1.0 VCE=1.0V 0.8 “ON” Voltages TJ=125℃ VBE(SAT)@IC/IB=10 200 25℃ 0.6 VBE(ON)@VCE=1.0V 100 80 -55℃ 60 40 0.5 1.0 2.0 3.0 5.010 20 30 50100200300 500 Collector Current, IC (mA) UNISONIC TECHNOLOGIES CO., LTD www.unisonic.com.tw 0.4 0.2 VCE(SAT)@IC/IB=10 0 0.5 1.0 2.0 5.0 10 20 50 100200 500 Collector Current, IC (mA) 4 of 5 QW-R206-041.F MMBTA06 Temperature Coefficient, RθVB (mV/℃) TYPICAL CHARACTERISTICS(Cont.) Collector-Emitter Voltage, VCE (V) NPN SILICON TRANSISTOR UTC assumes no responsibility for equipment failures that result from using products at values that exceed, even momentarily, rated values (such as maximum ratings, operating condition ranges, or other parameters) listed in products specifications of any and all UTC products described or contained herein. UTC products are not designed for use in life support appliances, devices or systems where malfunction of these products can be reasonably expected to result in personal injury. Reproduction in whole or in part is prohibited without the prior written consent of the copyright owner. The information presented in this document does not form part of any quotation or contract, is believed to be accurate and reliable and may be changed without notice. UNISONIC TECHNOLOGIES CO., LTD www.unisonic.com.tw 5 of 5 QW-R206-041.F