Datasheet

UNISONIC TECHNOLOGIES CO., LTD
MMBTA06
NPN SILICON TRANSISTOR
AMPLIFIER TRANSISTOR
FEATURES

3
* Collector-Emitter Voltage: VCEO=80V
* Collector Dissipation: PD=350mW
2
1
SOT-23
(JEDEC TO-236)

ORDERING INFORMATION
Ordering Number
Note:

MMBTA06G-AE3-R
Pin Assignment: E: Emitter
Package
B: Base
SOT-23
C: Collector
Pin Assignment
1
2
3
E
B
C
Packing
Tape Reel
MARKING
www.unisonic.com.tw
Copyright © 2015 Unisonic Technologies Co., Ltd
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NPN SILICON TRANSISTOR
ABSOLUTE MAXIMUM RATINGS (TA=25°С, unless otherwise specified)
PARAMETER
Collector Base Voltage
Collector Emitter Voltage
Emitter Base Voltage
Collector Current - Continuous
Total Device Dissipation(Note 2)
Derate Above 25°C
RATINGS
UNIT
80
V
80
V
4
V
500
mA
350
mW
PD
2.8
mW/°C
Junction Temperature
TJ
+150
°C
Storage Temperature
TSTG
-55 ~ +150
°C
Notes: 1. Absolute maximum ratings are those values beyond which the device could be permanently damaged.
Absolute maximum ratings are stress ratings only and functional device operation is not implied.
2. Device mounted on FR-4=1.6×1.6×0.06 in

THERMAL DATA
PARAMETER
Junction to Ambient

SYMBOL
VCBO
VCEO
VEBO
IC
SYMBOL
θJA
RATINGS
357
UNIT
°C/W
ELECTRICAL CHARACTERISTICS (TA=25°C, unless otherwise specified)
PARAMETER
OFF CHARACTERISTICS
Collector Emitter Breakdown Voltage (Note 1)
Emitter Base Breakdown Voltage
Collector Cutoff Current
Collector Cutoff Current
ON CHARACTERISTICS
DC Current Gain
SYMBOL
BVCEO
BVEBO
ICES
ICBO
hFE
TEST CONDITIONS
IC=1.0mA, IB=0
IE=100μA, IC=0
VCE=60V, IB=0
VCB=80V, IE=0
80
4
VCE=1V , IC=10mA,
VCE=1V , IC=100mA,
IC=100mA, IB=10mA
VCE=1V , IC=100mA,
100
100
Collector Emitter Saturation Voltage
VCE(SAT)
Base Emitter on Voltage
VBE(ON)
SMALL-SIGNAL CHARACTERISTICS
Current Gain Bandwidth Product (Note2)
fT
VCE=2V, IC=10mA, f=100MHz
Notes: 1. Pulse test: PW ≤ 300μs, Duty Cycle ≤ 2%
2. fT is defined as the frequency at which IhfeI extrapolates to unity.
UNISONIC TECHNOLOGIES CO., LTD
www.unisonic.com.tw
MIN
100
TYP
MAX UNIT
0.1
0.1
V
V
μA
μA
0.25
1.2
V
V
MHz
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NPN SILICON TRANSISTOR
SWITCHING TIME TEST CIRCUITS
TURN-ON TIME
-1.0V
5.0µs
+10V
0
100
VIN
tr=3.0ns
5.0µF
TURN-OFF TIME
+VBB
VCC
+40V
VCC
+40V
100
RL
OUTPUT
VIN
RB
5.0µF
CS<6.0pF
100
5.0µs
RL
OUTPUT
RB
CS<6.0pF
100
tr=3.0ns
UNISONIC TECHNOLOGIES CO., LTD
www.unisonic.com.tw
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Collector Current, IC (mA)
Capacitance, C (pF)
Current-Gain Bandwidth
Product, fT (MHz)
TYPICAL CHARACTERISTICS
Time, t (ns)

NPN SILICON TRANSISTOR
DC Current Gain
400
TJ=125℃
1.0
VCE=1.0V
0.8
“ON” Voltages
TJ=125℃
VBE(SAT)@IC/IB=10
200
25℃
0.6
VBE(ON)@VCE=1.0V
100
80
-55℃
60
40
0.5 1.0 2.0 3.0 5.010 20 30 50100200300 500
Collector Current, IC (mA)
UNISONIC TECHNOLOGIES CO., LTD
www.unisonic.com.tw
0.4
0.2
VCE(SAT)@IC/IB=10
0
0.5 1.0 2.0 5.0 10 20 50 100200 500
Collector Current, IC (mA)
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Temperature Coefficient, RθVB (mV/℃)
TYPICAL CHARACTERISTICS(Cont.)
Collector-Emitter Voltage, VCE (V)

NPN SILICON TRANSISTOR
UTC assumes no responsibility for equipment failures that result from using products at values that
exceed, even momentarily, rated values (such as maximum ratings, operating condition ranges, or
other parameters) listed in products specifications of any and all UTC products described or contained
herein. UTC products are not designed for use in life support appliances, devices or systems where
malfunction of these products can be reasonably expected to result in personal injury. Reproduction in
whole or in part is prohibited without the prior written consent of the copyright owner. The information
presented in this document does not form part of any quotation or contract, is believed to be accurate
and reliable and may be changed without notice.
UNISONIC TECHNOLOGIES CO., LTD
www.unisonic.com.tw
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