UNISONIC TECHNOLOGIES CO., LTD. PZT5401 PNP EPITAXIAL SILICON TRANSISTOR HIGH VOLTAGE SWITCHING TRANSISTOR FEATURES * High Collector-Emitter Voltage: VCEO=-150V * High current gain APPLICATIONS * Telephone Switching Circuit * Amplifier ORDERING INFORMATION Ordering Number Package Lead Free Halogen-Free PZT5401L-x-AA3-R PZT5401G-x-AA3-R SOT-223 Note: Pin Assignment: B: Base C: Collector E: Emitter www.unisonic.com.tw Copyright © 2011 Unisonic Technologies Co., LTD. Pin Assignment 1 2 3 B C E Packing Tape Reel 1 of 4 QW-R207-013.B PZT5401 PNP EPITAXIAL SILICON TRANSISTOR ABSOLUATE MAXIUM RATINGS (TA = 25℃, unless otherwise specified) PARAMETER Collector-Base Voltage Collector-Emitter Voltage Emitter-Base Voltage DC Collector Current Power Dissipation Junction Temperature Storage Temperature SYMBOL VCBO VCEO VEBO IC PD TJ TSTG UNIT V V V mA W ℃ ℃ ELECTRICAL CHARACTERISTICS (TA= 25℃, unless otherwise specified) PARAMETER SYMBOL TEST CONDITIONS Collector-Base Breakdown Voltage VCBO IC=100μA, IE=0 Collector-Emitter Breakdown Voltage VCEO IC=1mA, IB=0 Emitter-Base Breakdown Voltage VEBO IE=10μA, IC=0 Collector Cut-off Current ICBO VCB=120V, IE=0 Emitter Cut-off Current IEBO VBE=-3V, IC=0 VCE=-5V, IC=-1mA VCE=-5V, IC=-10mA DC Current Gain(note) hFE VCE=-5V, IC=-50mA IC=-10mA, IB=-1mA Collector-Emitter Saturation Voltage VCE(SAT) IC=-50mA, IB=-5mA IC=-10mA, IB=-1mA Base-Emitter Saturation Voltage VBE(SAT) IC=-50mA, IB=-5mA Current Gain Bandwidth Product fT VCE=-10V, IC=-10mA, f=100MHz Output Capacitance COB VCB=-10V, IE=0, f=1MHz IC=-0.25mA, VCE=-5V Noise Figure NF RS=1kΩ, f=10Hz ~ 15.7kHz Note: Pulse test: PW<300μs, Duty Cycle<2% RATINGS -160 -150 -5 -600 2 +150 -40 ~ +150 MIN -160 -150 -5 TYP MAX -50 -50 80 80 80 100 UNIT V V V nA nA 400 -0.2 -0.5 -1 -1 400 6.0 MHz pF 8 dB V V CLASSIFICATION OF hFE RANK RANGE A 80-170 UNISONIC TECHNOLOGIES CO., LTD www.unisonic.com.tw B 150-240 C 200-400 2 of 4 QW-R207-013.B PZT5401 TYPICAL CHARACTERICS Fig.1 Collector output Capacitance Fig.2 DC current Gain 3 10 VCE=-5V 8 hFE, DC current Gain Cob,Capacitance (pF) 10 f=1MHz IE=0 6 4 2 0 0 -10 1 -10 -10 2 2 10 1 10 0 10 -1 -10 Collector-Base voltage (V) -10 0 1 -10 -10 2 -10 3 Ic,Collector current (mA) Fig.3 Base-Emitter on Voltage Fig.4 Saturation voltage -10 3 1 -10 Saturation voltage (V) Ic,Collector current (mA) Ic=10*IB VCE=-5V -10 2 -10 -10 1 0 -10 VBE(sat) 0 -1 -10 VCE(sat) -2 -10 0 -0.2 -0.4 -0.6 -0.8 -1.0 Base-Emitter voltage (V) Current Gain-bandwidth product, fT (MHz) PNP EPITAXIAL SILICON TRANSISTOR -1 -10 0 -10 1 -10 -10 2 3 -10 Ic,Collector current (mA) Fig.5 Current gain-bandwidth product 10 3 VCE=-10V 10 2 1 10 10 0 0 -10 1 -10 -10 2 3 -10 Ic,Collector current (mA) UNISONIC TECHNOLOGIES CO., LTD www.unisonic.com.tw 3 of 4 QW-R207-013.B PZT5401 PNP EPITAXIAL SILICON TRANSISTOR UTC assumes no responsibility for equipment failures that result from using products at values that exceed, even momentarily, rated values (such as maximum ratings, operating condition ranges, or other parameters) listed in products specifications of any and all UTC products described or contained herein. UTC products are not designed for use in life support appliances, devices or systems where malfunction of these products can be reasonably expected to result in personal injury. Reproduction in whole or in part is prohibited without the prior written consent of the copyright owner. The information presented in this document does not form part of any quotation or contract, is believed to be accurate and reliable and may be changed without notice. UNISONIC TECHNOLOGIES CO., LTD www.unisonic.com.tw 4 of 4 QW-R207-013.B