Datasheet

UNISONIC TECHNOLOGIES CO., LTD.
PZT5401
PNP EPITAXIAL SILICON TRANSISTOR
HIGH VOLTAGE SWITCHING
TRANSISTOR
„
FEATURES
* High Collector-Emitter Voltage: VCEO=-150V
* High current gain
„
APPLICATIONS
* Telephone Switching Circuit
* Amplifier
„
ORDERING INFORMATION
Ordering Number
Package
Lead Free
Halogen-Free
PZT5401L-x-AA3-R
PZT5401G-x-AA3-R
SOT-223
Note: Pin Assignment: B: Base C: Collector
E: Emitter
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Copyright © 2011 Unisonic Technologies Co., LTD.
Pin Assignment
1
2
3
B
C
E
Packing
Tape Reel
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„
PNP EPITAXIAL SILICON TRANSISTOR
ABSOLUATE MAXIUM RATINGS (TA = 25℃, unless otherwise specified)
PARAMETER
Collector-Base Voltage
Collector-Emitter Voltage
Emitter-Base Voltage
DC Collector Current
Power Dissipation
Junction Temperature
Storage Temperature
„
SYMBOL
VCBO
VCEO
VEBO
IC
PD
TJ
TSTG
UNIT
V
V
V
mA
W
℃
℃
ELECTRICAL CHARACTERISTICS (TA= 25℃, unless otherwise specified)
PARAMETER
SYMBOL
TEST CONDITIONS
Collector-Base Breakdown Voltage
VCBO
IC=100μA, IE=0
Collector-Emitter Breakdown Voltage
VCEO
IC=1mA, IB=0
Emitter-Base Breakdown Voltage
VEBO
IE=10μA, IC=0
Collector Cut-off Current
ICBO
VCB=120V, IE=0
Emitter Cut-off Current
IEBO
VBE=-3V, IC=0
VCE=-5V, IC=-1mA
VCE=-5V, IC=-10mA
DC Current Gain(note)
hFE
VCE=-5V, IC=-50mA
IC=-10mA, IB=-1mA
Collector-Emitter Saturation Voltage
VCE(SAT)
IC=-50mA, IB=-5mA
IC=-10mA, IB=-1mA
Base-Emitter Saturation Voltage
VBE(SAT)
IC=-50mA, IB=-5mA
Current Gain Bandwidth Product
fT
VCE=-10V, IC=-10mA, f=100MHz
Output Capacitance
COB
VCB=-10V, IE=0, f=1MHz
IC=-0.25mA, VCE=-5V
Noise Figure
NF
RS=1kΩ, f=10Hz ~ 15.7kHz
Note: Pulse test: PW<300μs, Duty Cycle<2%
„
RATINGS
-160
-150
-5
-600
2
+150
-40 ~ +150
MIN
-160
-150
-5
TYP
MAX
-50
-50
80
80
80
100
UNIT
V
V
V
nA
nA
400
-0.2
-0.5
-1
-1
400
6.0
MHz
pF
8
dB
V
V
CLASSIFICATION OF hFE
RANK
RANGE
A
80-170
UNISONIC TECHNOLOGIES CO., LTD
www.unisonic.com.tw
B
150-240
C
200-400
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TYPICAL CHARACTERICS
Fig.1 Collector output Capacitance
Fig.2 DC current Gain
3
10
VCE=-5V
8
hFE, DC current Gain
Cob,Capacitance (pF)
10
f=1MHz
IE=0
6
4
2
0
0
-10
1
-10
-10
2
2
10
1
10
0
10
-1
-10
Collector-Base voltage (V)
-10
0
1
-10
-10
2
-10
3
Ic,Collector current (mA)
Fig.3 Base-Emitter on Voltage
Fig.4 Saturation voltage
-10 3
1
-10
Saturation voltage (V)
Ic,Collector current (mA)
Ic=10*IB
VCE=-5V
-10 2
-10
-10
1
0
-10
VBE(sat)
0
-1
-10
VCE(sat)
-2
-10
0
-0.2
-0.4
-0.6
-0.8
-1.0
Base-Emitter voltage (V)
Current Gain-bandwidth product, fT (MHz)
„
PNP EPITAXIAL SILICON TRANSISTOR
-1
-10
0
-10
1
-10
-10
2
3
-10
Ic,Collector current (mA)
Fig.5 Current gain-bandwidth
product
10
3
VCE=-10V
10
2
1
10
10
0
0
-10
1
-10
-10
2
3
-10
Ic,Collector current (mA)
UNISONIC TECHNOLOGIES CO., LTD
www.unisonic.com.tw
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PNP EPITAXIAL SILICON TRANSISTOR
UTC assumes no responsibility for equipment failures that result from using products at values that
exceed, even momentarily, rated values (such as maximum ratings, operating condition ranges, or
other parameters) listed in products specifications of any and all UTC products described or contained
herein. UTC products are not designed for use in life support appliances, devices or systems where
malfunction of these products can be reasonably expected to result in personal injury. Reproduction in
whole or in part is prohibited without the prior written consent of the copyright owner. The information
presented in this document does not form part of any quotation or contract, is believed to be accurate
and reliable and may be changed without notice.
UNISONIC TECHNOLOGIES CO., LTD
www.unisonic.com.tw
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