Datasheet

UNISONIC TECHNOLOGIES CO., LTD
2SA1774
PNP EPITAXIAL SILICON TRANSISTOR
GENERAL PURPOSE
TRANSISTOR

FEATURES
* Excellent hFE linearity
* Complements the UTC 2SC4617

ORDERING INFORMATION
Ordering Number
2SA1774G-x-AE3-R
2SA1774G-x-AL3-R
2SA1774G-x-AN3-R
2SA1774G-x-AQ3-R
Note: Pin Assignment: E: Emitter B: Base
Package
SOT-23
SOT-323
SOT-523
SOT-723
Packing
Tape Reel
Tape Reel
Tape Reel
Tape Reel
C: Collector
(1) R: Tape Reel
2SA1774G-x-AE3-R

Pin Assignment
1
2
3
E
B
C
E
B
C
E
B
C
E
B
C
(1)Packing Type
(2)Package Type
(2) AE3: SOT-23, AL3: SOT-323, AN3: SOT-523,
(3)Rank
(3)Green Package
(3) x: refer to Classification of hFE
AQ3: SOT-723
(4) G: Halogen Free and Lead Free
MARKING
www.unisonic.com.tw
Copyright © 2014 Unisonic Technologies Co., Ltd
1 of 3
QW-R221-011.E
2SA1774

PNP EPITAXIAL SILICON TRANSISTOR
ABSOLUTE MAXIMUM RATING (TA=25°С, unless otherwise specified)
PARAMETER
Collector-Base Voltage
Collector-Emitter Voltage
Emitter-Base Voltage
Collector Current
RATINGS
UNIT
-60
V
-50
V
-6
V
-0.15
A
SOT-23
0.22
SOT-323
0.16
Collector Power Dissipation
PC
W
SOT-523
0.15
SOT-723
0.125
Junction Temperature
TJ
150
°С
Storage Temperature
TSTG
-55 ~ +150
°С
Note: 1. Absolute maximum ratings are those values beyond which the device could be permanently damaged.
Absolute maximum ratings are stress ratings only and functional device operation is not implied.
2. The device is guaranteed to meet performance specification within 0°С ~70°С operating temperature range
and assured by design from –20°С ~85°С.

SYMBOL
VCBO
VCEO
VEBO
IC
ELECTRICAL CHARACTERISTICS (TA=25°С, unless otherwise specified.)
PARAMETER
Collector-Base Breakdown Voltage
Collector-Emitter Breakdown Voltage
Emitter-Base Breakdown Voltage
Collector Cutoff Current
Emitter Cutoff Current
DC Current Transfer Ratio
Collector-Emitter Saturation Voltage
Transition Frequency
Output Capacitance

SYMBOL
BVCBO
BVCEO
BVEBO
ICBO
IEBO
hFE
VCE (SAT)
fT
COB
TEST CONDITIONS
IC = -50µA
IC = -1mA
IE = -50µA
VCB= -60V
VEB= -6V
VCE= -6V, IC= -1mA
IC=-50mA, IB=−5mA
VCE= -12V, IE=2mA, f=100MHz
VCB= -12V, IE=0A, f=1MHz
MIN
-60
-50
-6
TYP
MAX
-0.1
-0.1
560
-0.5
120
140
4.0
5.0
UNIT
V
V
V
µA
µA
V
MHz
pF
CLASSIFICATION OF hFE1
RANK
Range
Q
120 ~ 270
UNISONIC TECHNOLOGIES CO., LTD
www.unisonic.com.tw
R
180 ~ 390
S
270 ~ 560
2 of 3
QW-R221-011.E
2SA1774
PNP EPITAXIAL SILICON TRANSISTOR
hFE,DC Current Gain
Collector-Emitter Saturation Voltage,
VCE(SAT) (V)
TYPICAL CHARACTERISTICS

UTC assumes no responsibility for equipment failures that result from using products at values that
exceed, even momentarily, rated values (such as maximum ratings, operating condition ranges, or
other parameters) listed in products specifications of any and all UTC products described or contained
herein. UTC products are not designed for use in life support appliances, devices or systems where
malfunction of these products can be reasonably expected to result in personal injury. Reproduction in
whole or in part is prohibited without the prior written consent of the copyright owner. The information
presented in this document does not form part of any quotation or contract, is believed to be accurate
and reliable and may be changed without notice.
UNISONIC TECHNOLOGIES CO., LTD
www.unisonic.com.tw
3 of 3
QW-R221-011.E